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1. 发明授权

US09065003B2 Semiconductor light emitting device and semiconductor wafer 有权
标题翻译：半导体发光器件和半导体晶片
公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L33/12 , H01L33/32 , H01L33/02
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

2. 发明申请

US20130087760A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER 有权
标题翻译：半导体发光器件和半导体晶体管
公开(公告)号：US20130087760A1
公开(公告)日：2013-04-11
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

3. 发明申请

US20130062612A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20130062612A1
公开(公告)日：2013-03-14
申请号：US13407169
申请日：2012-02-28
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L33/007 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer.
摘要翻译：根据一个实施例，氮化物半导体器件包括基底层，第一堆叠中间层和功能层。基底层包括形成在基底上的AlN缓冲层。第一堆叠中间层设置在基础层上。第一堆叠中间层包括设置在基底层上的第一AlN中间层，设置在第一AlN中间层上的第一AlGaN中间层和设置在第一AlGaN中间层上的第一GaN中间层。功能层设置在第一堆叠中间层上。第一AlGaN中间层包括与第一AlN中间层接触的第一阶梯层。第一层中的Al组成比在层叠方向上从第一AlN中间层朝向第一阶层逐渐降低。

4. 发明授权

US08785943B2 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer 有权
标题翻译：氮化物半导体器件，氮化物半导体晶片，以及氮化物半导体层的制造方法
公开(公告)号：US08785943B2
公开(公告)日：2014-07-22
申请号：US13407169
申请日：2012-02-28
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L33/007 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer.
摘要翻译：根据一个实施例，氮化物半导体器件包括基底层，第一堆叠中间层和功能层。基底层包括形成在基底上的AlN缓冲层。第一堆叠中间层设置在基础层上。第一堆叠中间层包括设置在基底层上的第一AlN中间层，设置在第一AlN中间层上的第一AlGaN中间层和设置在第一AlGaN中间层上的第一GaN中间层。功能层设置在第一堆叠中间层上。第一AlGaN中间层包括与第一AlN中间层接触的第一阶梯层。第一层中的Al组成比在层叠方向上从第一AlN中间层朝向第一阶层逐渐降低。

5. 发明授权

US08604496B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US08604496B2
公开(公告)日：2013-12-10
申请号：US13214690
申请日：2011-08-22
申请人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.
摘要翻译：根据一个实施例，光学半导体器件包括n型半导体层，p型半导体层和功能部件。功能部件设置在n型半导体层和p型半导体层之间。功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。至少两个有源层包括多层堆叠体，n侧阻挡层，阱层和p侧势垒层。多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。

6. 发明申请

US20120132940A1 OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学半导体器件
公开(公告)号：US20120132940A1
公开(公告)日：2012-05-31
申请号：US13214690
申请日：2011-08-22
申请人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.
摘要翻译：根据一个实施例，光学半导体器件包括n型半导体层，p型半导体层和功能部件。功能部件设置在n型半导体层和p型半导体层之间。功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。至少两个有源层包括多层堆叠体，n侧阻挡层，阱层和p侧势垒层。多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。

7. 发明授权

US09130098B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09130098B2
公开(公告)日：2015-09-08
申请号：US13212539
申请日：2011-08-18
申请人： Naoharu Sugiyama , Tomonari Shioda , Hisashi Yoshida , Shinya Nunoue
发明人： Naoharu Sugiyama , Tomonari Shioda , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01L27/15 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/46
CPC分类号： H01L33/06 , H01L33/12 , H01L33/32 , H01L33/46
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction.
摘要翻译：根据一个实施例，半导体发光器件包括发光层，透光层和第一半导体层。透光层相对于从发光层发射的光是可透射的。第一半导体层与发光层和透光层之间的透光层接触。透光层的热膨胀系数大于透光层的热膨胀系数，其晶格常数小于有源层的晶格常数，并且在面内方向具有拉伸应力。

8. 发明授权

US08698123B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08698123B2
公开(公告)日：2014-04-15
申请号：US13213373
申请日：2011-08-19
申请人： Tomonari Shioda , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L27/15
CPC分类号： H01L33/06 , H01L33/04 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。发光部分设置在n型和p型半导体层之间，并且包括n侧阻挡层和第一发光层。第一发光层包括第一阻挡层，第一阱层和第一AlGaN层。第一阻挡层设置在n侧势垒层和p型半导体层之间。第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。第一AlGaN层设置在第一阱层和第一势垒层之间。从发光部发出的光的峰值波长λp长于515nm。

9. 发明授权

US08598605B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08598605B2
公开(公告)日：2013-12-03
申请号：US13601454
申请日：2012-08-31
申请人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

10. 发明授权

US09053931B2 Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片，氮化物半导体器件以及氮化物半导体晶片的制造方法
公开(公告)号：US09053931B2
公开(公告)日：2015-06-09
申请号：US13626265
申请日：2012-09-25
申请人： Hisashi Yoshida , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L21/02 , H01L29/10 , H01L29/205 , H01L33/32 , H01L33/06
CPC分类号： H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor. An i-th buffer layer (i being an integer of 1 or more and less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer. An (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers the i-th buffer layer and the (i+1)-th buffer layer satisfy relation of (W(i+1)−Wi)/Wi≦0.008.
摘要翻译：根据一个实施例，氮化物半导体晶片包括：硅衬底; 设置在所述硅基板上的缓冲部; 以及设置在缓冲部上并包含氮化物半导体的功能层。缓冲部包括含有氮化物半导体的第一〜第n缓冲层（n为4以上的整数）。第一至第n缓冲层的第i个缓冲层（i为1以上且小于n的整数）在平行于第一缓冲层的主面的第一方向上具有晶格长度Wi。设置在第i个缓冲层上的第（i + 1）个缓冲层在第一方向上具有晶格长度W（i + 1）。在第一至第n缓冲层中，第i个缓冲层和第（i + 1）个缓冲层满足关系式（W（i + 1）-Wi）/ W i＆nlE; 0。008。

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