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1. 发明专利

JP2007021123A Weight detachable kettlebell 审中-公开
标题翻译：重量可拆卸卡特贝尔
公开(公告)号：JP2007021123A
公开(公告)日：2007-02-01
申请号：JP2005230035
申请日：2005-07-11
申请人： Yoshiyuki Harada , 義之原田
发明人： HARADA YOSHIYUKI
IPC分类号： A63B21/072
摘要： PROBLEM TO BE SOLVED: To solve the problem that several kettlebells are required for the training with varied weights because the conventional kettlebells are of a full solid type.
SOLUTION: A kettlebell is gouged out through from its bottom part to make a cavity and a weight is inserted into a core protruded inward from the lower part of a grip part and fixed with a lock device. The weight is made adjustable and variable, thereby making the training possible with varied weights even in a single body.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了解决由于传统的水壶具有完全固体类型而需要用不同重量进行培训的几个水壶的问题。解决方案：将壶从其底部穿过，形成空腔，将重物插入从把手部分的下部向内突出的芯并且用锁定装置固定。重量是可调节和可变的，从而使训练成为可能，即使在单个身体中也可以使用不同的重量。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2007021122A Adjustable weight kettlebell 审中-公开
标题翻译：可调重量KETTLEBELL
公开(公告)号：JP2007021122A
公开(公告)日：2007-02-01
申请号：JP2005230034
申请日：2005-07-11
申请人： Yoshiyuki Harada , 義之原田
发明人： HARADA YOSHIYUKI
IPC分类号： A63B21/072
摘要： PROBLEM TO BE SOLVED: To provide the problem that a plurality of kettlebells are required for the training with varied weights because the conventional kettlebells are of a full solid type.
SOLUTION: A cavity part is provided within the kettle bell and an openable lid is applied on to a weight adjusting port linking the cavity part to the outside. The cavity is filled with a liquid, sand, a metal, pebbles or the like, thereby varying the weight on use.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供用于具有不同重量的训练所需的多个水壶的问题，因为传统的水壶是完全固体型的。
解决方案：在壶铃内设置空腔部分，并且可打开的盖子被施加到将空腔部分连接到外部的重量调节口。空腔中填充有液体，沙子，金属，鹅卵石等，从而改变使用时的重量。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2003081367A Packaging bag and housing container therefor 审中-公开
标题翻译：包装袋及其包装容器
公开(公告)号：JP2003081367A
公开(公告)日：2003-03-19
申请号：JP2001272969
申请日：2001-09-10
申请人： Tashichiro Harada , Yoshiyuki Harada , 太七郎原田 , 誉之原田
发明人： HARADA TASHICHIRO , HARADA YOSHIYUKI
IPC分类号： B65D83/08 , B65D30/10
摘要： PROBLEM TO BE SOLVED: To provide a packaging bag which can be easily taken out one by one with an opening edge part in an open condition when the packaging bag is taken out, and a housing container therefor.
SOLUTION: A plurality of packaging bags 2 overlap so that the opening edge parts 1 are located on the same side, and a part of the opening edge parts 1 of the adjacent packaging bags 2 are connected to each other. The housing container 4 of the packaging bag houses a plurality of packaging bags 2, and has an outlet 5 of the packaging bags 2 so that the packaging bags 2 can be continuously taken out.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种包装袋，其能够在包装袋被取出时以开放状态容易地从开口边缘部分取出，以及容纳容器。解决方案：多个包装袋2重叠，使得开口边缘部分1位于同一侧，并且相邻包装袋2的开口边缘部分1的一部分彼此连接。包装袋的容纳容器4容纳多个包装袋2，并且具有包装袋2的出口5，从而可以连续地取出包装袋2。

4. 发明授权

US09397167B2 Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片，氮化物半导体器件以及氮化物半导体晶片的制造方法
公开(公告)号：US09397167B2
公开(公告)日：2016-07-19
申请号：US13729713
申请日：2012-12-28
申请人： Hisashi Yoshida , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/15 , H01L29/20 , H01L21/02 , H01L29/778 , H01L29/06 , H01L33/00 , H01L33/12
CPC分类号： H01L29/2003 , H01L21/02104 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/0649 , H01L29/7786 , H01L33/007 , H01L33/12
摘要： A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.
摘要翻译：氮化物半导体晶片包括硅衬底，堆叠多层单元，含硅单元和上层单元。硅衬底具有主表面。堆叠的多层单元设置在主表面上。堆叠的多层单元包括N个缓冲层。缓冲层包括第i个缓冲层和设置在第i个缓冲层上的第（i + 1）个缓冲层。第i个缓冲层在平行于主表面的第一方向上具有第i个晶格长度Wi。第（i + 1）个缓冲层在第一方向具有第（i + 1）个格子长度W（i + 1）。对于所有缓冲层，满足（W（i + 1）-Wi）/ Wi＆nlE; 0.008的关系。含硅单元设置在堆叠的多层单元上。上层单元设置在含硅单元上。

5. 发明授权

US09349590B2 Method for manufacturing nitride semiconductor layer 有权
标题翻译：氮化物半导体层的制造方法
公开(公告)号：US09349590B2
公开(公告)日：2016-05-24
申请号：US13604183
申请日：2012-09-05
申请人： Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L21/02 , H01L33/00 , H01L33/12
CPC分类号： H01L21/02389 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.
摘要翻译：根据一个实施例，公开了一种用于制造氮化物半导体层的方法。该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。第一下层沿着平行于主表面的第一轴线具有第一格子间距。第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。第一上层的至少一部分具有压缩应变。第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

6. 发明授权

US08680537B2 Nitride semiconductor element and nitride semiconductor wafer 有权
标题翻译：氮化物半导体元件和氮化物半导体晶片
公开(公告)号：US08680537B2
公开(公告)日：2014-03-25
申请号：US13602868
申请日：2012-09-04
申请人： Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/02
CPC分类号： H01L29/205 , B82Y20/00 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003 , H01L29/365 , H01L29/7783 , H01L33/06 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0
摘要翻译：根据一个实施例，氮化物半导体元件包括基底层，功能层和层叠体。层叠体设置在基础层和功能层之间。层叠体包括第一层叠中间层，其包括第一GaN中间层，Al x Ga 1-x N 1的第一高Al组成层（0

7. 发明申请

US20130036759A1 REFRIGERATION APPARATUS 有权
标题翻译：制冷装置
公开(公告)号：US20130036759A1
公开(公告)日：2013-02-14
申请号：US13643134
申请日：2011-04-28
申请人： Yoshiyuki Harada , Toshiyuki Maeda
发明人： Yoshiyuki Harada , Toshiyuki Maeda
IPC分类号： F25B1/00 , F25D31/00
CPC分类号： H02P27/08 , F25B13/00 , F25B31/006 , F25B49/025 , F25B2313/003 , F25B2313/021 , F25B2600/021 , F25B2600/024 , H02M1/44 , H02M2001/327 , H02P29/68 , Y02B30/741
摘要： A power module is attached to a refrigerant cooler in contact with the refrigerant cooler, and cooling is performed by dissipating heat to the refrigerant flowing in the refrigerant cooler. A controller outputs a driving signal to a drive circuit to reduce the number of switching operations of switching elements.
摘要翻译：电力模块连接到与制冷剂冷却器接触的制冷剂冷却器，并且通过向在制冷剂冷却器中流动的制冷剂散热来进行冷却。控制器将驱动信号输出到驱动电路以减少开关元件的开关操作次数。

8. 发明申请

US20120032209A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20120032209A1
公开(公告)日：2012-02-09
申请号：US13032934
申请日：2011-02-23
申请人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
发明人： Tomonari SHIODA , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/04 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：半导体层; 多层结构体; 和发光部分。多层结构体设置在半导体层之间，并且包括第一层和包括In的第二层。发光部分与多层结构体和p型半导体层之间的多层结构体接触，并且包括阻挡层和包括In的阱层，III族元素中的In组成比高于In组成比中的In组成比第三组元素在第二层。多层结构体的平均晶格常数大于n型半导体层的平均晶格常数。多层结构体的平均晶格常数与发光部的平均晶格常数之差小于多层结构体与n型半导体层的平均晶格常数之差。

9. 发明申请

US20120012814A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120012814A1
公开(公告)日：2012-01-19
申请号：US13035304
申请日：2011-02-25
申请人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/06 , H01L33/08
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。发光部分包括多个发光层。每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。每个阱层区域具有常见的An In组成比。每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

10. 发明申请

US20110204394A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110204394A1
公开(公告)日：2011-08-25
申请号：US12875503
申请日：2010-09-03
申请人： Toshiki HIKOSAKA , Tomonari Shioda , Yoshiyuki Harada , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Tomonari Shioda , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： H01L33/30 , H01L33/32
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0
摘要翻译：根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。阻挡层设置在n型和p型半导体层之间。阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。阻挡层中的至少一个包括第一层，第二层和第三层。第二层比第一层更靠近p型半导体层。第三层比第二层更靠近p型半导体层。第二层包括Al x Ga 1-x N（0

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