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1. 发明专利

JP2000109396A SILICON SEMICONDUCTOR SUBSTRATE AND ITS PRODUCTION 失效
公开(公告)号：JP2000109396A
公开(公告)日：2000-04-18
申请号：JP8491699
申请日：1999-03-26
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： HASEBE MASAMI , NAKAI KATSUHIKO , IWASAKI TOSHIO , OHASHI WATARU , IKARI ATSUSHI
IPC分类号： H01L21/20 , C30B29/06 , H01L21/322
摘要： PROBLEM TO BE SOLVED: To reduce the occurrence defects as much as possible in an epitaxial layer and in the region near the interface of the epitaxial layer and a substrate wafer and to add excellent gettering characteristics, by using a silicon wafer containing a specified amt. of nitrogen as the substrate wafer and depositing a silicon single crystal layer by epitaxial method on the surface of the wafer. SOLUTION: An amt. of nitrogen in the substrate wafer is specified to 1.0×1012 to 1.0×1016 atoms/cm3. The silicon wafer 1a satisfying the above condition is produced by Czochralski (CZ) method or magnetic field-applied CZ method by using fused silicon containing 1.0×1016 to 1.5×1019 atoms/cm3 nitrogen. By incorporating a specified amt. of nitrogen, the density of point defects during growing crystals and aggregation behavior of the crystals are changed to suppress production of minute defects or void defects in the epitaxial layer 3 and in the region 2, 1b near the interface. Further, proper crystal defects are produced in an IG layer 1d to enhance the gettering ability.

2. 发明专利

JPH11106282A SILICONE SINGLE CRYSTAL, ITS PRODUCTION AND ITS EVALUATION 失效
公开(公告)号：JPH11106282A
公开(公告)日：1999-04-20
申请号：JP28465897
申请日：1997-10-01
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： NAKAI KATSUHIKO , HASEBE MASAMI , OTA KUNITERU , ISHIZAKA KAZUNORI , IWASAKI TOSHIO
IPC分类号： G01N21/88 , C30B15/00 , C30B29/06 , G01N21/00 , G01N21/94 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To obtain a single crystal good in the breakdown strength characteristics of an oxide membrane, and the leak characteristics of a p-n junction by regulating the density of COP having a size not less than a specific value measured by a surface foreign body meter so as to be not larger than a specified number over the whole surface of a wafer, and the size of a dislocation cluster so as to be not larger than the specific value over the whole surface of the wafer. SOLUTION: This single crystal is the one having /cm density of COP with >=0.11 μm size measured by a surface foreign body meter over the whole surface of a wafer, μm/cm product of the average value of the dislocation cluster sizes and the density of the dislocation clusters. The single crystal is produced by a Czochralski process by growing the single crystal under a condition of / deg.C/min) V/G [V(mm/min) is a crystal growing rate; G ( deg.C/mm) is a temperature gradient between a silicon molten liquid and a crystal interface in the crystal growing direction] at

3. 发明专利

JP2000026196A SILICON SEMICONDUCTOR SUBSTRATE AND ITS PRODUCTION 失效
公开(公告)号：JP2000026196A
公开(公告)日：2000-01-25
申请号：JP8491599
申请日：1999-03-26
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： IKARI ATSUSHI , SAKAMOTO HIKARI , NAKAI KATSUHIKO , HOSHINO TAIZO
IPC分类号： H01L21/208 , C30B29/06 , C30B33/02 , H01L21/322
摘要： PROBLEM TO BE SOLVED: To prevent vacancy defects from being caused by adding nitrogen and thereby to produce a heat-treated substrate having a high quality surface layer of denuded zone(DZ) in the production of a silicon single crystal substrate by a Czochralski method. SOLUTION: In this production, nitrogen is added at the time of producing a silicon single crystal by a Czochralski method and the produced silicon single crystal contg. 1×1013 to 1×1016 atoms/cm3 nitrogen is subjected to heat treatment to produce a semiconductor substrate in which the density of crystal defects each having a >=0.1 μm size (expressed in terms of the diameter), in the region ranging from the surface of the substrate to a 1 μm depth, is

4. 发明专利

DE19983188T1 未知
公开(公告)号：DE19983188T1
公开(公告)日：2001-05-10
申请号：DE19983188
申请日：1999-04-30
申请人： NIPPON STEEL CORP
发明人： IKARI ATSUSHI , HASEBE MASAMI , NAKAI KATSUHIKO , SAKAMOTO HIKARU , OHASHI WATARU , HOSHINO TAIZO , WASAKI TOSHIO , HATTA MIKIO
IPC分类号： C30B15/00 , H01L21/322 , C30B29/06
摘要： A silicon semiconductor substrate is obtained by deriving a silicon semiconductor substrate from a silicon single crystal grown by the Czochralski method from a molten silicon containing not less than 1x1016 atoms/cm3 and not more than 1.5x1019 atoms/cm3 of nitrogen and heat-treating the silicon semiconductor substrate at a temperature of not less than 1000° C. and not more than 1300° C. for not less than one hour and is characterized by the fact that the density of crystal defects measuring not less than 0.1 mum as reduced to diameter is not more than 104 pieces/cm3 at least in the region reaching a depth of 1 mum from the surface of the substrate and the nitrogen content at the center of thickness of the silicon semiconductor substrate is not less than 1x1013 atoms/cm3 and not more than 1x1016 atoms/cm3.

5. 发明专利

JP2000264783A SILICON SEMICONDUCTOR SUBSTRATE AND ITS PRODUCTION 失效
公开(公告)号：JP2000264783A
公开(公告)日：2000-09-26
申请号：JP7839399
申请日：1999-03-23
申请人： NIPPON STEEL CORP
发明人： NAKAI KATSUHIKO , HASEBE MASAMI , OHASHI WATARU , IKARI ATSUSHI , TACHIKAWA AKIYOSHI , DEAI HIROYUKI , YOKOTA HIDEKI
IPC分类号： C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a silicon semiconductor substrate whose crystal defects liable to cause problems in the manufacturing a device, are efficiently reduced at a low cost without using heat treatment in a hydrogen atmosphere, or the like, and also to provide a production process of the substrate. SOLUTION: This silicon semiconductor substrate (silicon wafer) consists of a silicon single crystal grown by a Czochralski method. The production of the silicon wafer comprises: growing a silicon single crystal at a >=2 deg.C/min cooling rate in the range of from a melt temperature to 800 deg.C of the crystal being grown; slicing a silicon wafer from the grown single crystal; and subjecting the silicon wafer to heat treatment in a rare gas containing =1,150 deg.C for >=[73-0.06×temperature ( deg.C)] hr; wherein the defect density of defects each having a >=50 nm size expressed in terms of the diameter, in a deep region having >50 μm depth from the surface of the wafer is >=3×106/cm3 and the COP(crystal originated particle) density of particles each having a >=0.1 μm size in a shallow region having

6. 发明专利

JPH1143397A SILICON SINGLE CRYSTAL AND ITS PRODUCTION 失效
公开(公告)号：JPH1143397A
公开(公告)日：1999-02-16
申请号：JP19754997
申请日：1997-07-23
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： HASEBE MASAMI , NAKAI KATSUHIKO , MIYAUCHI MASAHIRO , IWASAKI TOSHIO
IPC分类号： C30B15/20 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for pulling up a crystal by which crystal originated particles(COP) and microdefects to be a cause of producing the COP are reduced in the crystal produced by the Czochralski method. SOLUTION: This method for producing a silicon single crystal comprises annealing a crystal in a temperature region of the melting point to >=1,300 deg.C for >=400 min and pulling up the crystal (method 1), regulating the time for passing a temperature region of >=1,350 deg.C to 0.13 ratio (v/G) of the pulling up speed (v: mm/min) to the crystal temperature gradient in the solidification interface (G: deg.C/mm) in addition to the method 1 (method 3), annealing the crystal at =1.0 deg.C/min crystal cooling rate in the temperature region of 1,100 to 1,000 deg.C in addition to the method 1, 2 or 3 (method 5).

7. 发明专利

JPH1143393A SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION 失效
公开(公告)号：JPH1143393A
公开(公告)日：1999-02-16
申请号：JP19755097
申请日：1997-07-23
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： NAKAI KATSUHIKO , HASEBE MASAMI , OTA KUNITERU , IWASAKI TOSHIO , ISHIZAKA KAZUNORI
IPC分类号： C30B15/20 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To produce excellent withstand voltage characteristics of an oxide film by regulating the density of crystal originated particles(COP) having a specific size or above of a silicon single crystal, produced by a Czochralski method and measured with a surface foreign material meter to a specific number or below over the whole surface and the dislocation cluster density to a specific value or below. SOLUTION: This silicon single crystal wafer is obtained by regulating the density of COP having >=0.11 μm size measured by a surface foreign matter meter to over the whole surface of the wafer and the dislocation cluster density to over the whole surface of the wafer and is a silicon single crystal prepared by growing a crystal under conditions so as to provide / deg.C.min V/G when the crystal growth rate is V mm/min and the crystallization temperature gradient in the interface between a silicon melt and the crystal is G deg.C/mm. The cooling rate in a region from the melting point of the silicon to 1,200 deg.C when growing the crystal is preferably

8. 发明专利

JPH09105720A MATERIAL EVALUATING METHOD USING LASER 失效
公开(公告)号：JPH09105720A
公开(公告)日：1997-04-22
申请号：JP26326695
申请日：1995-10-11
申请人： NIPPON STEEL CORP
发明人： NAKAI KATSUHIKO , HARADA HIROBUMI , HAGA HIROTSUGU , KAWAKAMI KAZUTO
IPC分类号： G01N21/49 , H01L21/322 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a material evaluating method by which the size and the number of crystal defects are evaluated from scattering due to the crystal defects such as inclusions by using laser beams penetrating a certain material. SOLUTION: In the material evaluating method using a laser, laser beams, which are penetrable through a material to be measured, are converged by means of a lens so as to be incident on the material, and then, the size and the number of crystal defects in the material are measured by detecting scattering generated from the crystal defects such as inclusions in the material. In this method, only the scattering generated from the defects, which are positioned within a predetermined distance from a laser focal point, is distinguished from others so as to be taken in as a signal, so that the size and the number of the detects in the material can be measured precisely.

9. 发明专利

JPH07206574A APPARATUS FOR PULLING UP SINGLE CRYSTAL 失效
公开(公告)号：JPH07206574A
公开(公告)日：1995-08-08
申请号：JP722094
申请日：1994-01-26
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： YAMAUCHI TAKESHI , NAKAI KATSUHIKO , OKUBO MASAMICHI
IPC分类号： C30B15/00
摘要： PURPOSE:To prevent impurities from a sliding part from falling and mixing in a melt by dividing a main chamber covering a crucible housing the melt and a heater into a body part and a ceiling part in the vertical direction and making the ceiling part movable. CONSTITUTION:This apparatus for pulling up a single crystal is obtained by fitting a quartz crucible 3 into an outer shell 2, housing a melt (M) and composed of graphite, housing a heater 4 and a heat insulating material 5 in the outer periphery of the outer shell 2 in a main chamber 6, dividing the main chamber 6 into a lower body 61 and a water-cooled type pull chamber 7 into a ceiling part 62 provided in the central part, connecting the connecting part thereof with a bellows mechanism 8 and forming the ceiling part 62 vertically movable relatively to the body 61 with a hydraulic mechanism.

10. 发明专利

JPH06271397A APPARATUS FOR PULLING UP SINGLE CRYSTAL 失效
公开(公告)号：JPH06271397A
公开(公告)日：1994-09-27
申请号：JP6224793
申请日：1993-03-22
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： NAKAI KATSUHIKO , YAMAUCHI TAKESHI , OKUBO MASAMICHI , HARADA HIROBUMI , MORITA KIYOSHI , KAWAKAMI KAZUTO
IPC分类号： C30B27/02 , C30B29/06
摘要： PURPOSE:To efficiently improve quality by providing the bottom end of a water cooling cylinder of the prescribed apparatus with an inert gas blow-off port directed to a single crystal and providing the peripheral surface of the inside wall of this cooling cylinder near this blow-off port with a receiving rack. CONSTITUTION:A seed crystal S is immersed into a melt M in a crucible 4 in which this melt is formed by heating and melting with a heater 3 which is arranged on the inner side of a shield 2 of the apparatus 1 for pulling up the single crystal; thereafter, this seed crystal is pulled up to obtain the single crystal C. A purging tube 5 having a cylindrical shape is then arranged concentrically on the outer peripheral surface of the single crystal C and the bottom end of this tube 5 is provided with a gaseous Ar ejection port 6 directed to the single crystal C right above the melt M. Further, the inner peripheral surface right above this ejection port 6 is provided with a rack member 7. The gaseous Ar is blown from the ejection port 6 to the area where the crystal is grown while the single crystal C is pulled up, by which rotating branch flows are formed. The single crystal is produced by pulling up while the cooling capacity is improved by these branch flows, one of which flows on the melt surface and the other of which ascends the flanks of the crystal C.

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