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1. 发明专利

AU2009263350B2 Gas charge container, atom probe apparatus, and method for analyzing hydrogen position in material 未知
公开(公告)号：AU2009263350B2
公开(公告)日：2014-02-06
申请号：AU2009263350
申请日：2009-06-24
申请人： NIPPON STEEL CORP
发明人： TAKAHASHI JUN , OHMORI HARUO , KAWAKAMI KAZUTO
IPC分类号： G01N1/28 , G01N23/225
摘要： A gas charge container comprises a sample holder that holds a needle-shaped material, a heavy hydrogen gas supply means that charges the heavy hydrogen gas in the needle-shaped material held by the sample holder, and a heating means that heats the needle-shaped material held by the sample holder. After the needle-shaped material is heated by the heating means, the needle-shaped material is cooled off by blocking the heat generated by the heating means.

2. 发明专利

AU2009263350A1 Gas charge container, atom probe apparatus, and method for analyzing hydrogen position in material 未知
公开(公告)号：AU2009263350A1
公开(公告)日：2009-12-30
申请号：AU2009263350
申请日：2009-06-24
申请人： NIPPON STEEL CORP
发明人： OHMORI HARUO , TAKAHASHI JUN , KAWAKAMI KAZUTO
IPC分类号： G01N1/28 , G01N23/225

3. 发明专利

BRPI1013018A2 "chapa de aço elétrica não orientada e seu método de produção" 未知
公开(公告)号：BRPI1013018A2
公开(公告)日：2016-03-29
申请号：BRPI1013018
申请日：2010-05-25
申请人： NIPPON STEEL CORP
发明人： YAMAMURA HIDEAKI , MIZUKAMI KAZUMI , KAWAKAMI KAZUTO , MIYAZAKI MASAFUMI , WAKISAKA TAKEAKI , KUBOTA TAKESHI , KUROSAKI YOUSUKE
IPC分类号： C22C38/00 , B22D11/00 , B22D11/108 , C22C38/14 , C22C38/60 , H01F1/16

4. 发明专利

JP2010280936A Non-oriented electromagnetic steel sheet and method for producing the same 有权
标题翻译：非导电电磁钢板及其制造方法
公开(公告)号：JP2010280936A
公开(公告)日：2010-12-16
申请号：JP2009134175
申请日：2009-06-03
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： MIYAZAKI MASAFUMI , YAMAMURA HIDEAKI , KUBOTA TAKESHI , KUROSAKI YOSUKE , KAWAKAMI KAZUTO , MIZUKAMI KAZUSANE
IPC分类号： C22C38/00 , C21D8/12 , C22C38/14 , C22C38/60
摘要： PROBLEM TO BE SOLVED: To provide a non-oriented electromagnetic steel sheet that can be produced at a low cost with excellent productivity without changing a conventional production process, is excellent in crystal grain growing property at stress relief annealing and shows good high-frequency iron loss, and a method for producing the same. SOLUTION: The non-oriented electromagnetic steel sheet is composed of, by mass, ≤0.01% C, 1.0-3.5% Si, 0.2-3.0% Al, 0.1-2.0% Mn, ≤0.1% P, ≤0.005% S, 0.0015-0.01% Ti, ≤0.005% N, 0.001-0.01% Nd and the balance being iron and unavoidable impurities. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种在不改变常规生产工艺的情况下以低成本生产而不改变常规生产工艺的无取向电磁钢板，在应力消除退火时的晶粒生长性能优异，显示出良好的高低频铁损及其制造方法。解决方案：无取向电磁钢板以质量计≤0.01％C，1.0-3.5％Si，0.2-3.0％Al，0.1-2.0％Mn，≤0.1％P，≤0.005％ S，0.0015-0.01％Ti，≤0.005％N，0.001-0.01％Nd，余量为铁和不可避免的杂质。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2005345127A Method for quantitative determination classified by states for component contained in base metal by emission spectrophotometry 有权
标题翻译：通过排放分光光度法测定基质金属元素的定量分析方法
公开(公告)号：JP2005345127A
公开(公告)日：2005-12-15
申请号：JP2004161761
申请日：2004-05-31
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： MIZUKAMI KAZUSANE , KAWAKAMI KAZUTO
IPC分类号： G01N21/67 , G01N33/20
摘要： PROBLEM TO BE SOLVED: To provide a state-classified fractional quantitative determination method for components in metal by emission spectrophotometry.
SOLUTION: In this method, a sample is set in an emission spectrophotometer, a voltage is impressed between a sample surface and an electrode to generate spark discharge, so as to conduct measurement from 1 pulse to several pulses, an obtained emission spectrum is dispersed by a spectroscope, a pulse intensity re-arrayed (PSA) diagram, wherein a pulse intensity order is plotted on an abscissa, and wherein an emission pulse intensity is plotted on an ordinate, is prepared on the basis of a data where the spectral line emission intensity in every one pulse of the specified component is converted into a digital signal value, a product of 50% intermediate intensity multiplied by the total pulse number is made to revert to a total amount (Total) of the specified component, a difference provided by subtracting the total amount from the total pulse integrated area is made to revert to an insoluble component amount (Insol.), and a solid solution component amount (Sol.) is found on the basis of a difference between the total amount of the specified component and the insoluble component amount.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过发射分光光度法提供金属成分的状态分类分数定量测定方法。解决方案：在该方法中，将样品置于发射分光光度计中，在样品表面和电极之间施加电压以产生火花放电，从而将测量从1脉冲传导到几个脉冲，获得的发射光谱通过分光镜分散，脉冲强度重排（PSA）图，其中脉冲强度顺序绘制在横坐标上，其中发射脉冲强度绘制在纵坐标上，是基于数据，其中将指定分量的每一个脉冲中的谱线发射强度转换为数字信号值，将50％中间强度乘以总脉冲数的乘积恢复为指定分量的总量（Total），a 通过从总脉冲积分区域减去总量而提供的差异恢复为不溶性成分量（Insol。），并且在此基础上发现固溶成分量（Sol。）指定成分的总量与不溶成分量之间的差异。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2001272340A CRYSTAL DEFECT EVALUATION METHOD AND APPARATUS 失效
公开(公告)号：JP2001272340A
公开(公告)日：2001-10-05
申请号：JP2000085566
申请日：2000-03-27
申请人： NIPPON STEEL CORP
发明人： TAKAHASHI ATSUSHI , KAWAKAMI KAZUTO
IPC分类号： G01B11/30 , G01N21/49 , G01N21/956
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for accurately measuring the shape, orientation and size of a crystal defects in a wafer or the like. SOLUTION: This crystal defect evaluation method makes laser light incident on a crystal and detects scattered light from the surface and the inside of the crystal. The crystal defect evaluation method and the device therefor use a data processing method considering a shape effect based on Rayleigh scattering.

7. 发明专利

JPH09199562A QUALITY INSPECTION METHOD OF SILICON WAFER 失效
公开(公告)号：JPH09199562A
公开(公告)日：1997-07-31
申请号：JP2591196
申请日：1996-01-19
申请人： NIPPON STEEL CORP
发明人： IKEMATSU YOICHI , DEAI HIROYUKI , IWASAKI TOSHIO , KAWAKAMI KAZUTO
IPC分类号： G06M11/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To enable quickly estimating fraction defective at a low cost as compared with the case measuring a practical oxide film withstand voltage, and with high precision as compared with the conventional simple method, by forming an oxide film, by thermal oxidation, on a washed surface subjected to mirror finish and counting the number of COP's which have appeared in the process. SOLUTION: After a silicon single crystal stick is grown, a wafer having a specified width is cut out from the single crystal stick, and the surface of the wafer is mirror finished and washed. An oxide film is formed on the surface by thermal oxidation, the number of COP's which have appeared in the process is counted, and the crystal quality is estimated. As to the condition of thermal oxidation, it is preferable that the width of the oxide film is set to be 7-40nm in dry oxygen atmosphere at 800-1100 deg.C. Thereby close positive correlation shown in a figure exists between the density of the COP's which have appeared after the oxide film is formed and that of oxide film withstand voltage deterioration factors, so that the oxide film withstand voltage can be indirectly estimated on the basis of the counting value of the COP's.

8. 发明专利

JPH0878426A SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0878426A
公开(公告)日：1996-03-22
申请号：JP21399194
申请日：1994-09-07
申请人： NIPPON STEEL CORP
发明人： KAMIMURA KENICHI , SHIMANOE NORITAKE , KAWAKAMI KAZUTO
IPC分类号： H01L21/322
摘要： PURPOSE: To provide a wafer of high gettering effect and its manufacturing method. CONSTITUTION: Fine particles are stuck on a silicon wafer. Silicon, material composed of silicon and oxygen, silicon dioxide, and material composed of silicon and nitrogen are used for the fine particles. The grain diameter of the fine particles is 0.01-5μm. The fine particles are dripped on the silicon wafer, or the silicon wafer is dipped in aqueous solution in which the fine particles are dispersed. Thereby the fine particles are stuck on the silicon wafer. A semiconductor substrate is manufactured by heat-treating the wafer, on which the fine particles are stuck, at 400-1200 deg.C.

9. 发明专利

JPH04209532A SELECTIVE ETCHANT FOR SILICON CRYSTAL 失效
公开(公告)号：JPH04209532A
公开(公告)日：1992-07-30
申请号：JP40535590
申请日：1990-12-06
申请人： NIPPON STEEL CORP
发明人： IWASAKI TOSHIO , KAWAKAMI KAZUTO , HAGA HIROTSUGU
IPC分类号： C23F1/24 , H01L21/308
摘要： PURPOSE:To completely eliminate the danger of an operation due to a liquid containing chromium (VI), to completely eliminate the contamination of surroundings and to make the performance of the title etchant equal to or superior to the liquid by a method wherein nitric acid instead of chromium (VI) is contained as an oxidizing agent and the ratio of contained components is made optimum. CONSTITUTION:An etchant which is used to selectively etch a silicon crystal is composed of the following: 36.5 to 49.5vol.% nitric acid as an oxidizing agent; 1.5 to 5vol.% hydrofluoric acid as an oxide solvent; 12.5 to 33.5vol.% acetic acid as a reaction buffer agent; and water and unavoidable impurities as the remaining part. When a crystal including defects is etched by using the etchant composed of the components, a clear etching pit which reflects the shape of the defects is revealed irrespective of a crystal orientation on the surface, and the surface is roughened little. As a result, it is possible to accurately judge the type, the size, the density, the position, the distribution and the like of the defects. Thereby, it is possible to clarlify a crystal defect which causes the operation error, of a highly integrated operation element, whose cause has been unaccountable so far and to enhance the production yield of a device. In addition, it is possible to completely eliminate the danger of an operation and the contamination of surroundings and to make the performance of the title etchant excellent.

10. 发明专利

JP2008262879A Atom probe device 有权
标题翻译：原子探针装置
公开(公告)号：JP2008262879A
公开(公告)日：2008-10-30
申请号：JP2007106450
申请日：2007-04-13
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： TAKAHASHI ATSUSHI , KAWAKAMI KAZUTO , YAMAGUCHI YUKIKO
IPC分类号： H01J37/285
摘要： PROBLEM TO BE SOLVED: To improve a function of an atom probe device capable of investigating an atom structure in a very minute region by directly measuring atoms one by one.
SOLUTION: This invention provides this atom probe device characterized by including: an electric field ion microscope device; an electric field ion microscope image introduction device introducing an electric field ion microscope image imaged by the electric field ion microscope device; and an electric field ion microscope image analyzer analyzing the introduced electric field ion microscope image.
COPYRIGHT: (C)2009,JPO&INPIT

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