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1. 发明专利

JPH1192274A SILICON WAFER AND ITS PRODUCTION 失效
公开(公告)号：JPH1192274A
公开(公告)日：1999-04-06
申请号：JP25579297
申请日：1997-09-19
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： IWASAKI TOSHIO , HASEBE MASAMI , TAKAHASHI YOSHINORI
IPC分类号： C30B15/00 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To obtain a silicon wafer produced by a CZ method and having a specific proportion or more of a C-mode region of a dielectric breakdown voltage by allowing the average value of an initial oxygen concentration and a precipitation oxygen concentration by an oxygen precipitation heat treatment to satisfy a specific condition. SOLUTION: This silicon wafer has >=40% proportion showing >=8.0 MV/cm dielectric breakdown voltage, and the average value of an initial oxygen concentration A×10 atoms/cm and a precipitated oxygen concentration B×10 atoms/cm" by the oxygen precipitation treatment regulated so as to satisfy the formula, avB . The silicon wafer produced by a CZ method changes device characteristics, especially junction leak by forming the division at the condition of the average value of the oxygen concentration. Defect-forming nuclears, which are the cause of deterioration of breakdown strength of an oxide membrane, are reduced by gradually decreasing the temperature within a crystallization temperature region of 1,200-1,000 deg.C, gradually decreasing the temperature within the following temperature region of 1,000-800 deg.C and quickly cooling the high temperature region including

2. 发明专利

JP2000109396A SILICON SEMICONDUCTOR SUBSTRATE AND ITS PRODUCTION 失效
公开(公告)号：JP2000109396A
公开(公告)日：2000-04-18
申请号：JP8491699
申请日：1999-03-26
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： HASEBE MASAMI , NAKAI KATSUHIKO , IWASAKI TOSHIO , OHASHI WATARU , IKARI ATSUSHI
IPC分类号： H01L21/20 , C30B29/06 , H01L21/322
摘要： PROBLEM TO BE SOLVED: To reduce the occurrence defects as much as possible in an epitaxial layer and in the region near the interface of the epitaxial layer and a substrate wafer and to add excellent gettering characteristics, by using a silicon wafer containing a specified amt. of nitrogen as the substrate wafer and depositing a silicon single crystal layer by epitaxial method on the surface of the wafer. SOLUTION: An amt. of nitrogen in the substrate wafer is specified to 1.0×1012 to 1.0×1016 atoms/cm3. The silicon wafer 1a satisfying the above condition is produced by Czochralski (CZ) method or magnetic field-applied CZ method by using fused silicon containing 1.0×1016 to 1.5×1019 atoms/cm3 nitrogen. By incorporating a specified amt. of nitrogen, the density of point defects during growing crystals and aggregation behavior of the crystals are changed to suppress production of minute defects or void defects in the epitaxial layer 3 and in the region 2, 1b near the interface. Further, proper crystal defects are produced in an IG layer 1d to enhance the gettering ability.

3. 发明专利

JPH11106282A SILICONE SINGLE CRYSTAL, ITS PRODUCTION AND ITS EVALUATION 失效
公开(公告)号：JPH11106282A
公开(公告)日：1999-04-20
申请号：JP28465897
申请日：1997-10-01
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： NAKAI KATSUHIKO , HASEBE MASAMI , OTA KUNITERU , ISHIZAKA KAZUNORI , IWASAKI TOSHIO
IPC分类号： G01N21/88 , C30B15/00 , C30B29/06 , G01N21/00 , G01N21/94 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To obtain a single crystal good in the breakdown strength characteristics of an oxide membrane, and the leak characteristics of a p-n junction by regulating the density of COP having a size not less than a specific value measured by a surface foreign body meter so as to be not larger than a specified number over the whole surface of a wafer, and the size of a dislocation cluster so as to be not larger than the specific value over the whole surface of the wafer. SOLUTION: This single crystal is the one having /cm density of COP with >=0.11 μm size measured by a surface foreign body meter over the whole surface of a wafer, μm/cm product of the average value of the dislocation cluster sizes and the density of the dislocation clusters. The single crystal is produced by a Czochralski process by growing the single crystal under a condition of / deg.C/min) V/G [V(mm/min) is a crystal growing rate; G ( deg.C/mm) is a temperature gradient between a silicon molten liquid and a crystal interface in the crystal growing direction] at

4. 发明专利

JPH11335198A SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION 失效
公开(公告)号：JPH11335198A
公开(公告)日：1999-12-07
申请号：JP8045199
申请日：1999-03-24
申请人： NSC ELECTRON CORP , NIPPON STEEL CORP
发明人： TANAKA MASAHIRO , OGAWA MISAO , IWASAKI TOSHIO , HARADA HIROBUMI , FUKUDA ATSUSHI , HASEBE MASAMI
IPC分类号： C30B29/06
摘要： PROBLEM TO BE SOLVED: To obtain a wafer having few grown-in defects such as a COP(crystal originated particle) by regulating the in-plane distribution of the COP, an oxygen concentration and/or an impurity concentration observed in the silicon single crystal wafer so as to be one or more kinds of concentric circular, helical and radial shapes. SOLUTION: When a wafer obtained from a grown silicon single crystal has a in-plane distribution of a COP, an oxygen concentration and/or an impurity concentration regulated so as to have concentric circular, helical or radial shapes having >=1 mm distances thereof, an area density of the COP regulated so as to be or a defect-free region regulated so as to be >=20% based on the whole area of the wafer, grown-in defects are decreased and the yield of devices is improved. The wafer is obtained by applying a cusped magnetic field on a molten liquid to stabilize the condition of the molten liquid at the interface while growing the single crystal, changing the growth rate of a micro single crystal and a molten liquid temperature in good accuracy, changing the oxygen concentration and the impurity concentration, and forming an absorbing layer of point defects in good control.

5. 发明专利

JPH1192273A SILICON WAFER AND ITS PRODUCTION 失效
公开(公告)号：JPH1192273A
公开(公告)日：1999-04-06
申请号：JP25579197
申请日：1997-09-19
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： IWASAKI TOSHIO , HASEBE MASAMI , TAKAHASHI YOSHINORI
IPC分类号： C30B15/00 , C30B29/06 , H01L21/02 , H01L21/208 , H01L21/322
摘要： PROBLEM TO BE SOLVED: To obtain an excellent silicon wafer produced by a Czochralski method and having retarded oxygen deposition, and further to provide a method for producing the silicon wafer. SOLUTION: This silicon wafer has each averaged value of an initial oxygen concentration A×10 atoms/cm and a deposited oxygen concentration B×10 atoms/cm after oxygen-depositing heat treatment, regulated so as to satisfy the formula, B on the surface of the wafer. The method for producing the silicon wafer comprises starting the quenching within a crystalline temperature region of =700 deg.C, regulating the cooling rate within a range of the quenching starting temperature to 600 deg. so as to be >=20 deg.C/min to provide the silicon single crystal, and slicing and grinding the obtained silicon single crystal.

6. 发明专利

DE19983188T1 未知
公开(公告)号：DE19983188T1
公开(公告)日：2001-05-10
申请号：DE19983188
申请日：1999-04-30
申请人： NIPPON STEEL CORP
发明人： IKARI ATSUSHI , HASEBE MASAMI , NAKAI KATSUHIKO , SAKAMOTO HIKARU , OHASHI WATARU , HOSHINO TAIZO , WASAKI TOSHIO , HATTA MIKIO
IPC分类号： C30B15/00 , H01L21/322 , C30B29/06
摘要： A silicon semiconductor substrate is obtained by deriving a silicon semiconductor substrate from a silicon single crystal grown by the Czochralski method from a molten silicon containing not less than 1x1016 atoms/cm3 and not more than 1.5x1019 atoms/cm3 of nitrogen and heat-treating the silicon semiconductor substrate at a temperature of not less than 1000° C. and not more than 1300° C. for not less than one hour and is characterized by the fact that the density of crystal defects measuring not less than 0.1 mum as reduced to diameter is not more than 104 pieces/cm3 at least in the region reaching a depth of 1 mum from the surface of the substrate and the nitrogen content at the center of thickness of the silicon semiconductor substrate is not less than 1x1013 atoms/cm3 and not more than 1x1016 atoms/cm3.

7. 发明专利

JP2001158688A SILICON SEED CRYSTAL, METHOD FOR PRODUCING THE SAME AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL 失效
公开(公告)号：JP2001158688A
公开(公告)日：2001-06-12
申请号：JP33861899
申请日：1999-11-29
申请人： NIPPON STEEL CORP , WACKER NSCE CORP
发明人： HASEBE MASAMI , IWASAKI TOSHIO , SUMINO KOJI , OHASHI WATARU , HARADA HIROBUMI
IPC分类号： C30B15/36 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal by which the rate for making the crystal dislocation free can be improved in the step for producing the silicon single crystal by a Czochralski method, further to provide a seed crystal usable for the production method, and a method for producing the seed crystal, and especially to extremely improve the rate for making the crystal dislocation free in the method for pulling and growing the single crystal without carrying out dash-necking (seed-tightening). SOLUTION: This silicon seed crystal is the one used when the silicon single crystal is produced by the Czochralski method, and is characterized by an oxide film having >=5 nm thickness, formed on the surface of the seed crystal. The method for producing the seed crystal, and the method for producing the silicon single crystal by using the seed crystal are also provided.

8. 发明专利

JPH1112081A PULLING OF SILICONE SINGLE CRYSTAL AND PULLING DEVICE THEREOF 失效
公开(公告)号：JPH1112081A
公开(公告)日：1999-01-19
申请号：JP16160697
申请日：1997-06-18
申请人： NIPPON STEEL CORP
发明人： SUZUKI SATOSHI , HASEBE MASAMI
IPC分类号： C30B15/30 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for pulling a silicone single crystal stably and in a high reliability even on increasing the pulling weight of the grown silicone single crystal ingot made to have a large diameter and large length, and also a device therefor. SOLUTION: This method for pulling a silicone single crystal is to immerse a seed crystal 7 into a melted silicone liquid and pulling the seed crystal for growing the silicone single crystal ingot 8 at the rear end part of the seed crystal and then perform the pulling of the grown silicone single crystal ingot by using a single crystal holding means 10 made as independently liftable from the seed pulling means. In this case, the holding of the silicone single crystal ingot is performed by a vacuum sucking force obtained by sucking an atmosphere in a sucked space formed by an opposing wall surface of the contacting part 16 of the holding means to the silicone single crystal ingot and the ingot surface by a vacuum pump 26 communicating with the sucked space through vacuum piping 19, 29, 23, 27.

9. 发明专利

JPH08208375A SILICON SINGLE CRYSTAL AND ITS PRODUCTION 失效
公开(公告)号：JPH08208375A
公开(公告)日：1996-08-13
申请号：JP1006795
申请日：1995-01-25
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , HASEBE MASAMI , HAGA HIROTSUGU , OKUBO MASAMICHI
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , H01L21/208
摘要： PURPOSE: To obtain a silicon single crystal which is produced by a Czochralski method and is excellent in device characteristics as represented by the voltage resistance characteristics of an insulating oxidized film and a process for producing the same. CONSTITUTION: A slow cooling temp. region is changed according to a change in the crystal producing speed in the method for slowly cooling the silicon single crystal under production in the certain temp. region among the methods for producing the silicon single crystal by the Czochralski method. More specifically, T is set at 250xS/3+830

10. 发明专利

JPH11116377A PULLING OF SILICON SINGLE CRYSTAL AND APPARATUS FOR PULLING 失效
公开(公告)号：JPH11116377A
公开(公告)日：1999-04-27
申请号：JP28240897
申请日：1997-10-15
申请人： NIPPON STEEL CORP , NITTETSU PLANT DESIGNING CORP
发明人： SUZUKI SATOSHI , HASEBE MASAMI , MORITA SHINICHI , YAMAMOTO MASAO
IPC分类号： C30B15/00 , C30B15/32 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide both a method for pulling a silicon single crystal by which the silicon single crystal can stably be pulled with high reliability even when the pulling weight is increased by increasing the caliber and length of a grown silicon single crystal ingot and an apparatus for pulling the silicon single crystal. SOLUTION: This apparatus for pulling up a silicon single crystal comprises a holding means 10 provided with an annular supporting frame 20 having a larger diameter than that of a silicon single crystal ingot arranged nearly coaxially with the growing axis of the silicon single crystal ingot, netlike belt units 30, attached to the inner peripheral side of the supporting frame 20 and made to be discontinuous in at least one site, tightening and securing tools 40 for mutually tying ends of the netlike belt units 30 in the discontinuous parts. Furthermore, a lifting and lowering means 50 suspends the supporting frame 20 of the holding means 10.

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