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1. 发明专利

JPH0642487B2 失效
公开(公告)号：JPH0642487B2
公开(公告)日：1994-06-01
申请号：JP13434389
申请日：1989-05-26
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： SAITO HAJIME , HARADA HIROBUMI , SUZUKI KENICHI , HATANAKA HIROYUKI
IPC分类号： H01L21/322

2. 发明专利

JPH0446099A PULLING UP DEVICE FOR SILICON SINGLE CRYSTAL BODY 失效
公开(公告)号：JPH0446099A
公开(公告)日：1992-02-17
申请号：JP15151990
申请日：1990-06-12
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： HARADA HIROBUMI , SHIBATA SADAYUKI , KOJIMA KIYOSHI
IPC分类号： C30B15/00 , C30B29/06
摘要： PURPOSE:To stably grow a high-quality single crystal having a low oxygen content without having dislocation by constituting the 2nd heat insulating member which covers the lower part of the crucible in the pulling up device by a CZ method of a movable shielding plate which can control the transmission quantity of radiation heat. CONSTITUTION:The quartz crucible 5a, a heating means 6 which heats the crucible by enclosing the crucible, the 1st heat insulating member 13 covering the outer periphery thereof, and the 2nd heat insulating member 14 covering the lower area of the crucible 5a are provided in a heating chamber 2a. The 2nd heat insulating member 14 in the pulling up device of the silicon single crystal C is constituted of the movable heat shielding plate 22a which can control the transmission quantity of the radiation heat from the crucible 5a and the heating means 6. For example, a pin part 27 projecting from the heat shielding plate 22a made of graphite is loosely fitted into through holes 26 of a retainer 24 shaped to comply with inner periphery of a supporting base 21 and a retainer 25 curved to evade a revolving shaft 4. A pulling wire 28 connected to the heat shielding plate 22a is operated by a mechanism 23 to execute the opening degree control integrally over the entire part of the heat shielding plate 22a.

3. 发明专利

JPH02312241A MANUFACTURE OF SILICON WAFER 失效
公开(公告)号：JPH02312241A
公开(公告)日：1990-12-27
申请号：JP13434389
申请日：1989-05-26
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： SAITO HAJIME , HARADA HIROBUMI , SUZUKI KENICHI , HATANAKA HIROYUKI
IPC分类号： H01L21/322
摘要： PURPOSE:To make a wafer superior in a gettering power and hard in warp at the time of a heat treatment, and to contrive the improvement of the yield of the formation of devices by a method wherein the temperature at a time when the wafer is made to heat up in a stepwise manner in order from a low temperature and a heating-up temperature are rationalized. CONSTITUTION:A silicon wafer is subjected to oxygen out diffusion heat treatment at a temperature of 1000 deg.C or higher. Then, after the wafer is corrected for five hours or more at a temperature region between 550 deg.C and 630 deg.C, it is made to heat up to a temperature of the following stage of a temperature difference of 10 deg.C to 40 deg.C at a heating-up speed less than 0.1 deg.C/minute. A correction is repeated for two hours or more, the wafer is made to heat up in order up to a temperature region of 630 deg.C to 70 deg.C and a multistage treatment is performed by the correction. After that, a high-temperature heat treatment is performed in a temperature range of 950 deg.C to 1100 deg.C. Thereby, even after the wafer goes through a heat treatment for the formation of a device, it has a sufficient gettering power, a wafer hard to swarp is obtained and the yield of the formation of various silicon IC devices can be improved.

4. 发明专利

JPH0881294A DEVICE FOR PRODUCING SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH0881294A
公开(公告)日：1996-03-26
申请号：JP21631994
申请日：1994-09-09
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： HASEBE MASAMI , TAKAO SHIGEYOSHI , KANDA ISAO , HARADA HIROBUMI , OKUBO MASAMICHI , KOJIMA KIYOSHI , TOMATSU HIROSHI
IPC分类号： C30B15/00 , C30B29/06 , H01L21/208
摘要： PURPOSE: To efficiently and safely obtain a high quality silicon single crystal extremely reduced in its defect, while avoiding the contamination of the silicon melted liquid with impurities. CONSTITUTION: A doughnut type water-cooling chamber 3d having a larger inner diameter than that of a crucible is disposed between an intermediate chamber 2c and a heating chamber 2a, and the first screen 22 composed from a substance large in the thermal conduction rate and the heat radiation rate is attached to the water-cooling chamber 2d. The first screen 22 has a ring-like rim member 22a for enlarging the contacting surface of the water-cooling chamber 2d and a leg member 22b downward extended so that the crystal interface of the melted raw material faces to the ceiling part 6a of the intermediate chamber 2c. Thereby, the exchange of radiation heat between the silicon single crystal and the first screen can efficiently be performed, and even when the cooling water is leaked from the water-cooling chamber 3d, the possibility of the dropping of the cooling water on the surfaces of the high temperature silicon single crystals or the high temperature silicon melted liquid can be lowered.

5. 发明专利

JPH0741383A SEMICONDUCTOR SINGLE CRYSTAL AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0741383A
公开(公告)日：1995-02-10
申请号：JP18853693
申请日：1993-07-29
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , NAKASHIZU TSUNEO , HASEBE MASAMI , OKUBO MASAMICHI , HARADA HIROBUMI
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , C30B33/02 , H01L21/208
摘要： PURPOSE:To produce a silicon single crystal excellent in the dielectric strength of an insulating oxidized film by the Czochralski method. CONSTITUTION:In a process for producing a silicon single crystal by the Czochralski method, a silicon single crystal is allowed to stay in the temp. range of 1,200-850 deg.C for >=200min in a crystal producing furnace. The resultant silicon single crystal is excellent in the dielectric strength of an insulating oxidized film and the ratio of C-mode passing of the dielectric strength is >=60% per one wafer.

6. 发明专利

JPH06256085A APPARATUS FOR PRODUCING SINGLE CRYSTAL 失效
公开(公告)号：JPH06256085A
公开(公告)日：1994-09-13
申请号：JP4022493
申请日：1993-03-01
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： OKUBO MASAMICHI , HARADA HIROBUMI , MORITA KIYOSHI , YAMAUCHI TAKESHI , NAKAI KATSUHIKO
IPC分类号： C30B15/00 , H01L21/208
摘要： PURPOSE:To provide a single crystal production apparatus effective for realizing ideal thermal history of a single crystal while suppressing the lowering of productivity and capable of giving a single crystal having uniform quality. CONSTITUTION:Ridges and grooves are formed on the inner wall surface of a thermal history forming cylinder 30. The flow rate of the gas flowing through the gap between the uneven inner wall surface and the outer circumference of the growing single crystal is varied. The annealing zone and the quenching zones can be positioned at arbitrary positions by the use of the structure.

7. 发明专利

JPH03218995A SILICON WAFER AND PRODUCTION OF SILICON SINGLE CRYSTAL BODY 失效
公开(公告)号：JPH03218995A
公开(公告)日：1991-09-26
申请号：JP1575290
申请日：1990-01-25
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： MIYAZAKI YOSHIMASA , HARADA HIROBUMI
IPC分类号： C30B15/02 , C30B29/06 , H01L21/208
摘要： PURPOSE:To provide the silicon wafer which has excellent pressure resistant characteristics of an oxide film in a device process and is sufficiently long in the life time of minority carries by incorporating carbon in a specific concn. range into the silicon wafer. CONSTITUTION:The silicon wafer for semiconductor materials is formed by incorporating the carbon in a 3X10 to 5X10 atoms/cm range into the silicon wafer. The silicon single crystal as this silicon wafer material is produced by adding the carbon, silicon carbide or a silicon raw material which is previously added with the carbon, into the silicon melt in a crucible, setting the carbon concn. in the melt in the part in the crucible where the silicon single crystal is pulled up to the value within + or -20% of the value obtd. after the above- mentioned carbon concn. in the single crystal is divided by the segregation coefft. of the carbon for the silicon and replenishing the raw material to the part in the crucible where the single crystal is pulled up according to the pulling up rate of the single crystal, to control the carbon concn. in the melt in the pulling up part.

8. 发明专利

JPH0388794A METHOD AND DEVICE FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH0388794A
公开(公告)日：1991-04-15
申请号：JP22591389
申请日：1989-08-31
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： MEGURO SEIZO , HARADA HIROBUMI , HABU RYUICHI
IPC分类号： C30B15/14 , C30B15/00 , C30B29/06 , H01L21/208
摘要： PURPOSE:To pull up Si signal crystal which is not contaminated with impurities by shutting off the spacing between Si single crystal under pulling from a melt and a crucible with an inverted circular conical tube body which has the bottom end in the vicinity of the Si single crystal and the melt and has an opaque nonmetallic surface only at the bottom end. CONSTITUTION:The pulling up of the above-mentioned Si single crystal is executed by providing the inverted circular conical tube body 4 having the bottom end proximate in proximity to the single crystal 3 and the crucible. Thus, the generation of the transition of the single crystal 3 under pulling up by the evaporated material from the melt 2 is, therefore, prevented. Further, since the surface of the inverted circular conical tube 4 is made of non-metallic material, no reaction product is produced even when SiO2 evaporated from the melt 2 is brought into contact with the surface and the contamination with metal is prevented. Further, since the bottom end of the tube body 4 is opaque and the other parts are transparent, the radiation heat that the single crystal 3 receives from the melt 2 and the crucible right after pulling up from the melt 2 is shut off by the opaque part and the pulling up speed is increased. Since the heat is thereafter properly interrupted, the cooling rate in the respective sections of the single crystal 3 under pulling up is regulated to the slow and adequate speed and the generation of a lamination flow induced by oxidation is prevented.

9. 发明专利

JPH06256086A APPARATUS FOR PRODUCING SINGLE CRYSTAL AND PRODUCTION PROCESS 失效
公开(公告)号：JPH06256086A
公开(公告)日：1994-09-13
申请号：JP4156593
申请日：1993-03-02
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： OKUBO MASAMICHI , HARADA HIROBUMI , YAMAUCHI TAKESHI
IPC分类号： C30B15/00 , C30B15/14 , H01L21/208
摘要： PURPOSE:To enable the production of single crystals having different qualities and to obtain a single crystal ingot having uniform quality throughout the total length by controlling the thermal history of a single crystal in the pulling up of a single crystal ingot. CONSTITUTION:The single crystal production apparatus 1 for pulling and growing a single crystal ingot 10 from a molten liquid 9 in a crucible 4 is provided with a chamber 2 composed of a heating chamber part 2a holding the above crucible 4 and a pull-up chamber part 2b extended upward from the heating chamber part 2a along the pull-up shaft and having an inner diameter smaller than that of the heating chamber 2a. A variable mechanism 27 is formed on a part of the wall surface of the heating chamber part 2a to enable the extension and contraction of the heating chamber part 2a in the direction of the pull-up shaft.

10. 发明专利

JPH06305879A APPARATUS FOR PULLING UP SINGLE CRYSTAL 失效
公开(公告)号：JPH06305879A
公开(公告)日：1994-11-01
申请号：JP8893793
申请日：1993-04-15
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： ESAKA HISAO , KOJIMA KIYOSHI , OKUBO MASAMICHI , KATO SATOSHI , HARADA HIROBUMI
IPC分类号： C30B15/20 , G01K1/08 , G01K7/02 , H01L21/208
摘要： PURPOSE:To improve the durability of a protecting tube for a thermocouple and the operating efficiency of an apparatus by providing the protecting tube for the thermocouple for measuring the temperature of a crucible holding a molten semiconductor melt with a specific construction. CONSTITUTION:This apparatus for pulling up a single crystal is provided by installing a thermocouple, located under a crucible for holding a molten semiconductor melt and used for measuring the temperature of the crucible. In the apparatus, a protecting tube for the thermocouple is constructed from an outer tube composed of a carbide and an inner tube composed of an oxide. A sintered compact of a carbonaceous substance of tungsten, silicon, titanium, etc., or a compound carbide thereof without readily decomposing at about 1500 deg.C temperature is cited as the carbide constituting the outer tube. On the other hand, the inner tube is constructed from an oxide simple substance such as silicon, zirconium or aluminum or a mixture thereof and has the function of an insulator at about 1500 deg.C temperature. The protecting tube for the thermocouple, resistant to thermal decomposition and together having the function of insulating properties is obtained by constructing the protecting tube for the thermocouple as described above.

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