专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4974232A Semiconductor laser device 失效
公开(公告)号：US4974232A
公开(公告)日：1990-11-27
申请号：US383099
申请日：1989-07-21
申请人： Motoyasu Morinaga , Hideto Furuyama , Masaru Nakamura , Nobuo Suzuki , Yuzo Hirayama , Hajime Okuda
发明人： Motoyasu Morinaga , Hideto Furuyama , Masaru Nakamura , Nobuo Suzuki , Yuzo Hirayama , Hajime Okuda
IPC分类号： H01S5/02 , H01S5/026 , H01S5/042 , H01S5/227 , H01S5/323
CPC分类号： H01S5/026 , H01S5/0422 , H01S5/227 , H01S5/0208 , H01S5/0425 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a substrate having an n-type buffer layer, a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region provided above the buffer layer, an active region consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions integrally formed with the low resistive region and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole is provided between the buffer layer and low resistive region on the side of buried portion. The auxiliary element includes a high resistive regions integrally formed with the low resistant region and positioned on the sides of low resistive region.

2. 发明授权

US4974233A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4974233A
公开(公告)日：1990-11-27
申请号：US383100
申请日：1989-07-21
申请人： Nobuo Suzuki , Motoyasu Morinaga , Hideto Furuyama , Yuzo Hirayama , Hajime Okuda , Masaru Nakamura , Nawoto Motegi
发明人： Nobuo Suzuki , Motoyasu Morinaga , Hideto Furuyama , Yuzo Hirayama , Hajime Okuda , Masaru Nakamura , Nawoto Motegi
IPC分类号： H01S5/02 , H01S5/026 , H01S5/042 , H01S5/227 , H01S5/323
CPC分类号： H01S5/0422 , H01S5/026 , H01S5/227 , H01S5/0208 , H01S5/0425 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a semiconductor mesa portion formed above semiconductor substrate by a predetermined interval, an active region, formed between the mesa portion and semiconductor substrate and consisting of a semiconductor having a forbidden band width smaller than those of the mesa portion and semiconductor substrate, for contributing to light emission, a pair of buried portions formed at both sides in a widthwise direction of and in contact with the active region and consisting of a semiconductor having a forbidden band width larger than that of the active region, a total width of the buried portions and the active region being smaller than that of the mesa portion, thereby forming a gap at a side of each of the buried portions between the mesa portion and semiconductor substrate to electrically insulate the mesa portion and semiconductor substrate, and supporting portions formed integrally with the mesa portion so as to support the mesa portion with respect to the substrate in association with the active region and the buried portions.

3. 发明授权

US4862474A Semicondutor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4862474A
公开(公告)日：1989-08-29
申请号：US198866
申请日：1988-05-26
申请人： Motoyasu Morinaga , Hideto Furuyama , Masaru Nakamura , Nobuo Suzuki , Yuzo Hirayama , Hajime Okuda
发明人： Motoyasu Morinaga , Hideto Furuyama , Masaru Nakamura , Nobuo Suzuki , Yuzo Hirayama , Hajime Okuda
IPC分类号： H01S5/02 , H01S5/026 , H01S5/042 , H01S5/227 , H01S5/323
CPC分类号： H01S5/026 , H01S5/0422 , H01S5/227 , H01S5/0208 , H01S5/0425 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a substrate having an n-type buffer layer, a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region provided above the buffer layer, an active region consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions integrally formed with the low resistive region and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole is provided between the buffer layer and low resistive region on the side of buried portion. The auxiliary element includes a high resistive regions integrally formed with the low resistant region and positioned on the sides of low resistive region.

4. 发明授权

US4858241A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4858241A
公开(公告)日：1989-08-15
申请号：US198859
申请日：1988-05-26
申请人： Nobuo Suzuki , Motoyasu Morinaga , Hideto Furuyama , Yuzo Hirayama , Hajime Okuda , Masaru Nakamura , Nawoto Motegi
发明人： Nobuo Suzuki , Motoyasu Morinaga , Hideto Furuyama , Yuzo Hirayama , Hajime Okuda , Masaru Nakamura , Nawoto Motegi
IPC分类号： H01S5/02 , H01S5/026 , H01S5/042 , H01S5/227 , H01S5/323
CPC分类号： H01S5/0422 , H01S5/026 , H01S5/227 , H01S5/0208 , H01S5/0425 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a semiconductor mesa portion formed above semiconductor substrate by a predetermined interval, an active region, formed between the mesa portion and semiconductor substrate and consisting of a semiconductor having a forbidden band width smaller than those of the mesa portion and semiconductor substrate, for contributing to light emission, a pair of buried portions formed at both sides in a widthwise direction of and in contact with the active region and consisting of a semiconductor having a forbidden band width larger than that of the active region, a total width of the buried portions and the active region being smaller than that of the mesa portion, thereby forming a gap at a side of each of the buried portions between the mesa portion and semiconductor substrate to electrically insulate the mesa portion and semiconductor substrate, and supporting portions formed integrally with the mesa portion so as to support the mesa portion with respect to the substrate in association with the active region and the buried portions.
摘要翻译：一种半导体激光器件，包括在半导体衬底上形成预定间隔的半导体台面部分，形成在台面部分和半导体衬底之间的有源区域，其具有禁带宽度小于台面部分和半导体衬底的宽度的半导体用于有助于发光的一对掩埋部分，形成在有源区域的宽度方向两侧并且与有源区域接触的一对掩埋部分，并且由禁带宽度大于有源区域的宽度的半导体构成，埋入部分和有源区域小于台面部分，从而在台面部分和半导体衬底之间的每个掩埋部分的一侧形成间隙，以使台面部分和半导体衬底电绝缘，形成的支撑部分与台面部分一体地相对于台面部分支撑与有源区域和掩埋部分相关联的衬底。

5. 发明授权

US5034957A Semiconductor laser device 失效
公开(公告)号：US5034957A
公开(公告)日：1991-07-23
申请号：US307278
申请日：1989-02-07
申请人： Yasuo Ohba , Yukie Nishikawa , Hajime Okuda , Masayuki Ishikawa , Hideto Sugawara , Hideo Shiozawa , Yoshihiro Kokubun
发明人： Yasuo Ohba , Yukie Nishikawa , Hajime Okuda , Masayuki Ishikawa , Hideto Sugawara , Hideo Shiozawa , Yoshihiro Kokubun
IPC分类号： H01L33/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/323
CPC分类号： H01S5/20 , H01L33/0062 , H01S5/305 , H01S5/32325 , H01S5/2059 , H01S5/2206 , H01S5/2231 , H01S5/3054
摘要： A semiconductor laser device using double heterostructure comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an active layer, the active layer having an impurity concentration not greater than 5.times.10.sup.16 cm.sup.-3. The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In.sub.q (Ga.sub.1-z Al.sub.z).sub.q P (0.ltoreq.q.ltoreq.1, 0.ltoreq.z.ltoreq.1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an n-type cladding layer and an p-type cladding layer, one of the n-type cladding layer and the p-type cladding layer being Si-doped. A method of manufacturing the device is also disclosed.

6. 发明授权

US07391102B2 Semiconductor apparatus configured with a lead frame having sufficient strenght to protect against external forces 有权
标题翻译：配置有具有足够强度以防止外力的引线框架的半导体装置
公开(公告)号：US07391102B2
公开(公告)日：2008-06-24
申请号：US10961409
申请日：2004-10-12
申请人： Satoshi Komoto , Hajime Okuda , Hirokazu Tanaka
发明人： Satoshi Komoto , Hajime Okuda , Hirokazu Tanaka
IPC分类号： H01L23/495 , H01L23/02 , H01L23/52 , H01L23/06 , H01L23/34 , H01L23/28 , H01L23/29
CPC分类号： H01S5/02244 , H01L2924/0002 , H01S5/02248 , H01S5/0683 , H01L2924/00
摘要： Disclosed is a semiconductor apparatus including: a first molded resin portion; a plate-shaped lead frame closely attached to the first molded resin portion; a second molded resin portion attached facing the first molded resin portion and the lead frame; and one or more elements attached on the lead frame on a side which faces the second molded resin portion, the one or more elements including a semiconductor element, wherein any part of at least one of the elements does not exist in a region composed of an aggregation of line segments, each line segment being formed by any two points on an outer periphery of the plate-shaped lead frame outside the first and second molded resin portions and all of the line segments being contained inside a board of the lead frame.
摘要翻译：公开了一种半导体装置，包括：第一模制树脂部分; 紧密地连接到第一模制树脂部分的板状引线框架; 第二模制树脂部分，其面向所述第一模制树脂部分和所述引线框架; 以及一个或多个元件，其在与所述第二模制树脂部分相对的一侧上附接在所述引线框架上，所述一个或多个元件包括半导体元件，其中所述元件中的至少一个元件的任何部分不存在于由线段的聚集，每个线段由第一和第二模制树脂部分外部的板状引线框架的外周上的任何两个点形成，并且所有线段被包含在引线框架的板内。

7. 发明授权

US5181218A Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
标题翻译：具有非吸收镜结构的半导体激光器的制造方法
公开(公告)号：US5181218A
公开(公告)日：1993-01-19
申请号：US619606
申请日：1990-11-29
申请人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
IPC分类号： H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2231 , H01S5/3206 , H01S5/32325
摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.
摘要翻译： InGaAlP NAM结构激光器形成有设置在n型GaAs衬底上的双异质结构部分。双异质结构部分包括n型InGaAlP的第一包层，未掺杂的InGaP有源层和p型InGaAlP的第二包层。通过MOCVD晶体生长，在第二覆层上依次形成具有条形开口和p型GaAs接触层的n型GaAs电流阻挡层。在位于条形开口正下方的活性层的中心区域中限定低能带隙区域。在活性层的与激光的光输出端部对应的周边区域中限定高能带隙区域，位于电流阻挡层的正下方。因此，可以减少或防止在输出端部处的振荡的激光束的自吸收。

8. 发明授权

US4987096A Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
标题翻译：具有非吸收镜结构的半导体激光器的制造方法
公开(公告)号：US4987096A
公开(公告)日：1991-01-22
申请号：US450063
申请日：1989-12-13
申请人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2231 , H01S5/3206 , H01S5/32325 , Y10S148/025 , Y10S148/095
摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

9. 发明授权

US4893313A Semiconductor laser device which has a double-hetero structure having an optimal layer thickness 失效
标题翻译：具有最佳层厚度的双异质结构的半导体激光器件
公开(公告)号：US4893313A
公开(公告)日：1990-01-09
申请号：US323400
申请日：1989-03-14
申请人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
发明人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
IPC分类号： H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2004 , H01S5/2231 , H01S5/3211
摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

10. 发明申请

US20050082646A1 Semiconductor apparatus 有权
标题翻译：半导体装置
公开(公告)号：US20050082646A1
公开(公告)日：2005-04-21
申请号：US10961409
申请日：2004-10-12
申请人： Satoshi Komoto , Hajime Okuda , Hirokazu Tanaka
发明人： Satoshi Komoto , Hajime Okuda , Hirokazu Tanaka
IPC分类号： H01S5/022 , H01L27/15 , H01S5/0683
CPC分类号： H01S5/02244 , H01L2924/0002 , H01S5/02248 , H01S5/0683 , H01L2924/00
摘要： Disclosed is a semiconductor apparatus including: a first molded resin portion; a plate-shaped lead frame closely attached to the first molded resin portion; a second molded resin portion attached facing the first molded resin portion and the lead frame; and one or more elements attached on the lead frame on a side which faces the second molded resin portion, the one or more elements including a semiconductor element, wherein any part of at least one of the elements does not exist in a region composed of an aggregation of line segments, the line segment being formed by any two points on an outer periphery of the plate-shaped lead frame outside the first and second molded resin portions and all of the line segment being contained inside a board.,of the lead frame.
摘要翻译：公开了一种半导体装置，包括：第一模制树脂部分; 紧密地连接到第一模制树脂部分的板状引线框架; 第二模制树脂部分，其面向所述第一模制树脂部分和所述引线框架; 以及一个或多个元件，其在与所述第二模制树脂部分相对的一侧上附接在所述引线框架上，所述一个或多个元件包括半导体元件，其中所述元件中的至少一个元件的任何部分不存在于由线段的聚集，线段由第一和第二模制树脂部分外的板状引线框架的外周上的任何两点形成，并且所有线段被包含在引线框架的板内部。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式