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1. 发明申请

US20110287605A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110287605A1
公开(公告)日：2011-11-24
申请号：US13198171
申请日：2011-08-04
申请人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
发明人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.
摘要翻译：在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层，通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层，所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理，具有激光的晶体半导体层。

2. 发明申请

US20090239354A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090239354A1
公开(公告)日：2009-09-24
申请号：US12399047
申请日：2009-03-06
申请人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
发明人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.
摘要翻译：在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层，通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层，所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理，具有激光的晶体半导体层。

3. 发明申请

US20100047997A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100047997A1
公开(公告)日：2010-02-25
申请号：US12505020
申请日：2009-07-17
申请人： Akihiro ISHIZUKA , Shinya SASAGAWA , Motomu KURATA , Atsushi HIKOSAKA , Taiga MURAOKA , Hitoshi NAKAYAMA
发明人： Akihiro ISHIZUKA , Shinya SASAGAWA , Motomu KURATA , Atsushi HIKOSAKA , Taiga MURAOKA , Hitoshi NAKAYAMA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween.
摘要翻译：本发明的一个目的是增加半导体层和基底衬底的粘附性并减少不良接合。在半导体衬底上形成氧化物膜，半导体衬底通过氧化膜照射加速离子，从而在半导体衬底的表面形成预定深度的脆化区域。通过施加偏置电压对半导体衬底和基底衬底上的氧化物膜进行等离子体处理，半导体衬底的表面和基底衬底的表面彼此相对设置，氧化膜的表面被接合在基底表面上进行热处理之后，在氧化膜的表面接合到基底表面之后进行热处理，沿脆化区域分离，由此在基底基板上形成半导体层氧化膜。

4. 发明申请

US20100081253A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：制造半导体基板的方法
公开(公告)号：US20100081253A1
公开(公告)日：2010-04-01
申请号：US12564961
申请日：2009-09-23
申请人： Motomu KURATA , Shinya SASAGAWA , Taiga MURAOKA
发明人： Motomu KURATA , Shinya SASAGAWA , Taiga MURAOKA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A step of forming an insulating film over a semiconductor substrate and forming an embrittled region in the semiconductor substrate by irradiating the semiconductor substrate with accelerated ions through the insulating film; a step of disposing a surface of the semiconductor substrate and a surface of a base substrate opposite to each other and bonding the surface of the insulating film to the surface of the base substrate; a step of forming a semiconductor layer over the base substrate with the insulating film interposed therebetween by causing separation along the embrittled region by performing heat treatment after the surface of the insulating film and the surface of the base substrate are bonded to each other; a step of performing etching treatment on the semiconductor layer; a step of irradiating the semiconductor layer subjected to the etching treatment with a laser beam; and a step of irradiating the semiconductor layer irradiated with the laser beam with plasma.
摘要翻译：在半导体衬底上形成绝缘膜并在半导体衬底中形成脆化区域的步骤，通过将半导体衬底通过绝缘膜照射加速离子; 将所述半导体基板的表面和基板的表面相对配置并将所述绝缘膜的表面接合到所述基板的表面的工序; 通过在绝缘膜的表面和基底基板的表面彼此接合之后通过进行热处理沿着脆化区域分离而在绝缘膜上形成半导体层，其中绝缘膜介于其间; 在半导体层上进行蚀刻处理的步骤; 用激光束照射进行了蚀刻处理的半导体层的工序; 以及用等离子体照射用激光束照射的半导体层的步骤。

5. 发明申请

US20110193080A1 Semiconductor device and electronic appliance 有权
标题翻译：半导体器件和电子设备
公开(公告)号：US20110193080A1
公开(公告)日：2011-08-11
申请号：US13014081
申请日：2011-01-26
申请人： Shunpei YAMAZAKI , Hiromichi GODO , Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA , Mayumi MIKAMI
发明人： Shunpei YAMAZAKI , Hiromichi GODO , Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA , Mayumi MIKAMI
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/45 , H01L29/66969 , Y10T428/24421
摘要： One object is to provide a semiconductor device that includes an oxide semiconductor and is reduced in size with favorable characteristics maintained. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The source electrode or the drain electrode includes a first conductive layer and a second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer. The sidewall insulating layer has a length of a bottom surface in the channel length direction smaller than a length in the channel length direction of the extended region of the second conductive layer and is provided over the extended region.
摘要翻译：一个目的是提供一种包括氧化物半导体的半导体器件，并且尺寸减小，并保持良好的特性。半导体器件包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极; 以及在氧化物半导体层和栅电极之间的栅极绝缘层。源电极或漏极包括第一导电层和具有从第一导电层的端面在沟道长度方向上延伸的区域的第二导电层。侧壁绝缘层的沟道长度方向的底面的长度小于第二导电层的延伸区域的沟道长度方向的长度，并且设置在延伸区域上。

6. 发明申请

US20120193625A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20120193625A1
公开(公告)日：2012-08-02
申请号：US13357902
申请日：2012-01-25
申请人： Shinya SASAGAWA , Motomu KURATA
发明人： Shinya SASAGAWA , Motomu KURATA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/441 , H01L29/41733 , H01L29/7869
摘要： An object is to provide a semiconductor device in which defects are reduced and miniaturization is achieved while favorable characteristics are maintained. A semiconductor layer is formed; a first conductive layer is formed over the semiconductor layer; the first conductive layer is etched with use of a first resist mask to form a second conductive layer having a recessed portion; the first resist mask is reduced in size to form a second resist mask; the second conductive layer is etched with use of the second resist mask to form source and drain electrodes each having a projecting portion with a tapered shape at the peripheries; a gate insulating layer is formed over the source and drain electrodes to be in contact with part of the semiconductor layer; and a gate electrode is formed in a portion over the gate insulating layer and overlapping with the semiconductor layer.
摘要翻译：本发明的目的是提供一种在保持有利特性的同时减小缺陷并实现小型化的半导体器件。形成半导体层; 在半导体层上形成第一导电层; 使用第一抗蚀剂掩模蚀刻第一导电层以形成具有凹部的第二导电层; 第一抗蚀剂掩模的尺寸减小以形成第二抗蚀剂掩模; 使用第二抗蚀剂掩模蚀刻第二导电层，以形成在周边具有锥形形状的突出部分的源极和漏极; 在源极和漏极上形成栅极绝缘层以与半导体层的一部分接触; 并且栅极电极形成在栅极绝缘层上方并与半导体层重叠的部分。

7. 发明申请

US20110147745A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110147745A1
公开(公告)日：2011-06-23
申请号：US12973123
申请日：2010-12-20
申请人： Shinya SASAGAWA , Akihiro ISHIZUKA , Shinobu FURUKAWA , Motomu KURATA
发明人： Shinya SASAGAWA , Akihiro ISHIZUKA , Shinobu FURUKAWA , Motomu KURATA
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： An embodiment is a thin film transistor which includes a gate electrode layer, a gate insulating layer provided so as to cover the gate electrode layer; a first semiconductor layer entirely overlapped with the gate electrode layer; a second semiconductor layer provided over and in contact with the first semiconductor layer and having a lower carrier mobility than the first semiconductor layer; an impurity semiconductor layer provided in contact with the second semiconductor layer; a sidewall insulating layer provided so as to cover at least a sidewall of the first semiconductor layer; and a source and drain electrode layers provided in contact with at least the impurity semiconductor layer. The second semiconductor layer may consist of parts which are apart from each other over the first semiconductor layer.
摘要翻译：一个实施例是一种薄膜晶体管，其包括栅极电极层，设置为覆盖栅极电极层的栅极绝缘层; 与栅电极层完全重叠的第一半导体层; 第二半导体层，设置在第一半导体层上并与第一半导体层接触，并具有比第一半导体层低的载流子迁移率; 设置成与所述第二半导体层接触的杂质半导体层; 侧壁绝缘层，设置成覆盖所述第一半导体层的至少一个侧壁; 以及与至少所述杂质半导体层接触地设置的源极和漏极电极层。第二半导体层可以由在第一半导体层上彼此分开的部分组成。

8. 发明申请

US20110180796A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110180796A1
公开(公告)日：2011-07-28
申请号：US13008285
申请日：2011-01-18
申请人： Shunpei YAMAZAKI , Hiromichi GODO , Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA , Mayumi MIKAMI
发明人： Shunpei YAMAZAKI , Hiromichi GODO , Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA , Mayumi MIKAMI
IPC分类号： H01L29/24
CPC分类号： H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor, which maintains favorable characteristics and achieves miniaturization. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, in which the source electrode and the drain electrode each include a first conductive layer, and a second conductive layer having a region which extends in a channel length direction from an end portion of the first conductive layer.
摘要翻译：本发明的目的是提供一种包含氧化物半导体的半导体器件，其保持有利的特性并实现小型化。半导体器件包括与氧化物半导体层接触的氧化物半导体层，源极和漏电极，与氧化物半导体层重叠的栅电极，以及设置在氧化物半导体层和栅电极之间的栅极绝缘层，其中源电极和漏极各自包括第一导电层，以及具有从第一导电层的端部在沟道长度方向上延伸的区域的第二导电层。

9. 发明申请

US20090111248A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20090111248A1
公开(公告)日：2009-04-30
申请号：US12247487
申请日：2008-10-08
申请人： Hideto OHNUMA , Tetsuya KAKEHATA , Akihisa SHIMOMURA , Shinya SASAGAWA , Motomu KURATA
发明人： Hideto OHNUMA , Tetsuya KAKEHATA , Akihisa SHIMOMURA , Shinya SASAGAWA , Motomu KURATA
IPC分类号： H01L21/02
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L21/302 , H01L21/3065 , H01L21/84
摘要： A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer.
摘要翻译：通过源气体的激发产生等离子体并通过从单晶半导体衬底的表面之一添加包含在等离子体中的离子种类而形成损伤区域; 在单晶半导体衬底的另一个表面上形成绝缘层; 支撑衬底牢固地附接到单晶半导体衬底，以便在其间插入绝缘层的单晶半导体衬底; 通过加热单晶半导体衬底，在损伤区域处分离成与单晶半导体层相连的支撑衬底和部分单晶半导体衬底; 在附着于支撑基板的单晶半导体层的表面进行干蚀刻，通过用激光束照射单晶半导体层来使单晶半导体层重结晶，从而熔化至少一部分单晶半导体层。

10. 发明申请

US20110147755A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20110147755A1
公开(公告)日：2011-06-23
申请号：US12972994
申请日：2010-12-20
申请人： Hidekazu MIYAIRI , Shinya SASAGAWA , Motomu KURATA
发明人： Hidekazu MIYAIRI , Shinya SASAGAWA , Motomu KURATA
IPC分类号： H01L29/786
CPC分类号： H01L29/78678 , H01L29/66765 , H01L29/78618 , H01L29/78648
摘要： A thin film transistor having favorable electric characteristics with high productively is provided. The thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, an impurity semiconductor layer which is in contact with part of the semiconductor layer and functions as a source region and a drain region, and a wiring in contact with the impurity semiconductor layer. The semiconductor layer includes a microcrystalline semiconductor region having a concave-convex shape, which is formed on the gate insulating layer side, and an amorphous semiconductor region in contact with the microcrystalline semiconductor region. A barrier region is provided between the semiconductor layer and the wiring.
摘要翻译：提供了具有良好的电特性的高效生产的薄膜晶体管。薄膜晶体管包括覆盖栅极的栅极绝缘层，与栅极绝缘层接触的半导体层，与半导体层的一部分接触并用作源极区域和漏极区域的杂质半导体层，以及与杂质半导体层接触的布线。半导体层包括形成在栅绝缘层侧的具有凹凸形状的微晶半导体区域和与微晶半导体区域接触的非晶半导体区域。在半导体层和布线之间设置有阻挡区域。

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