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    • 1. 发明申请
    • METHOD FOR MANUFACTURING SOI SUBSTRATE
    • 制造SOI衬底的方法
    • US20090239354A1
    • 2009-09-24
    • US12399047
    • 2009-03-06
    • Hideomi SUZAWAShinya SASAGAWAAkihisa SHIMOMURAJunpei MOMOMotomu KURATATaiga MURAOKAKosei NEI
    • Hideomi SUZAWAShinya SASAGAWAAkihisa SHIMOMURAJunpei MOMOMotomu KURATATaiga MURAOKAKosei NEI
    • H01L21/762
    • H01L21/76254
    • Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.
    • 在单晶半导体基板的表面上形成绝缘膜,在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域,在绝缘膜上形成接合层, 通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上,将单晶半导体基板分割为脆性区域,将单晶半导体基板分离成单晶半导体层, 所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理,对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理, 具有激光的晶体半导体层。
    • 2. 发明申请
    • METHOD FOR MANUFACTURING SOI SUBSTRATE
    • 制造SOI衬底的方法
    • US20110287605A1
    • 2011-11-24
    • US13198171
    • 2011-08-04
    • Hideomi SUZAWAShinya SASAGAWAAkihisa SHIMOMURAJunpei MOMOMotomu KURATATaiga MURAOKAKosei NEI
    • Hideomi SUZAWAShinya SASAGAWAAkihisa SHIMOMURAJunpei MOMOMotomu KURATATaiga MURAOKAKosei NEI
    • H01L21/762
    • H01L21/76254
    • Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.
    • 在单晶半导体基板的表面上形成绝缘膜,在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域,在绝缘膜上形成接合层, 通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上,将单晶半导体基板分割为脆性区域,将单晶半导体基板分离成单晶半导体层, 所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理,对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理, 具有激光的晶体半导体层。