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1. 发明授权

US09324758B2 Depth pixel included in three-dimensional image sensor and three-dimensional image sensor including the same 有权
标题翻译：包括在三维图像传感器中的深度像素和包括其的三维图像传感器
公开(公告)号：US09324758B2
公开(公告)日：2016-04-26
申请号：US14077602
申请日：2013-11-12
申请人： Min-Seok Oh , Hae-Kyung Kong , Tae Chan Kim , Jung Chak Ahn , Moo Sup Lim
发明人： Min-Seok Oh , Hae-Kyung Kong , Tae Chan Kim , Jung Chak Ahn , Moo Sup Lim
IPC分类号： H01L31/062 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14641
摘要： A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.
摘要翻译：深度像素包括光检测区域，第一和第二光栅以及第一和第二浮动扩散区域。光检测区域根据由物体反射的光来收集照片费用。所收集的光电荷基于光检测区域中的内部电场在与第一方向不同的第一方向和第二方向漂移。响应于第一光控制信号激活第一光栅。如果第一光栅被激活，则第一浮动扩散区积累在第一方向漂移的第一光电荷。响应于第一光控制信号激活第二光栅。如果第二光栅被激活，则第二浮动扩散区积累在第二方向漂移的第二光电荷。

2. 发明申请

US20140002636A1 METHOD AND DEVICE OF MEASURING THE DISTANCE TO AN OBJECT 有权
标题翻译：测量对象距离的方法和设备
公开(公告)号：US20140002636A1
公开(公告)日：2014-01-02
申请号：US13893812
申请日：2013-05-14
申请人： Han-Soo Lee , Hae-Kyung Kong , Kyung-IL Kim , Min-Seok Oh , Tae-Chan Kim , Moo-Sup Lim
发明人： Han-Soo Lee , Hae-Kyung Kong , Kyung-IL Kim , Min-Seok Oh , Tae-Chan Kim , Moo-Sup Lim
IPC分类号： G01C3/08
CPC分类号： G01S17/36 , G01C3/08
摘要： To measure the distance to points on an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object, a first photo-detection control signal is generated to control the radiation of the optical signal. A mask signal is generated such that the mask signal is activated at least during a shuttering duration for resetting the voltage level at a sensing node (associated with an operation of a previous frame). A second photo-detection control signal is generated based on the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration.
摘要翻译：为了通过向对象辐射周期性幅度调制的光信号并检测辐射光信号与来自对象的反射光信号之间的相位差来测量物体上与点的距离，产生第一光检测控制信号控制光信号的辐射。产生掩模信号，使得至少在用于复位感测节点处的电压电平（与先前帧的操作相关联）的快门持续时间期间激活屏蔽信号。基于第一光检测信号和掩模信号产生第二光检测控制信号，使得至少在快门持续时间期间第二光检测信号被去激活或屏蔽。

3. 发明申请

US20130062500A1 IMAGE SENSOR APPARATUS USING SHADED PHOTODETECTOR FOR TIME OF FLIGHT DETERMINATION 有权
标题翻译：图像传感器设备使用阴影照相机进行飞行时间测定
公开(公告)号：US20130062500A1
公开(公告)日：2013-03-14
申请号：US13612904
申请日：2012-09-13
申请人： Min-Seok Oh , Moo-Sup LIM , Jung-Chak AHN , Eun-Sub SHIM
发明人： Min-Seok Oh , Moo-Sup LIM , Jung-Chak AHN , Eun-Sub SHIM
IPC分类号： H01L31/0232 , H01L27/146 , H01L27/148 , H01L31/02
CPC分类号： G01S17/89 , G01S7/4816 , G01S7/4865 , H04N5/341 , H04N5/361 , H04N5/3745
摘要： A unit pixel for an image sensor includes an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current, an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current, a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source, and an initialization circuit configured to initialize the accumulation circuit at a predetermined cycle.
摘要翻译：图像传感器的单位像素包括积累电路，其被配置为通过在飞行时间（TOF）期间累积与暗电流相对应的电荷来产生累积的暗电流，所述累积电路被光学遮蔽以产生暗电流，输出电压产生电路，被配置为基于与累积暗电流相对应的电荷来产生和输出与TOF对应的输出电压;控制电路，被配置为基于输入到所述暗电流的光信号来控制所述输出电压产生电路的操作被物体反射后的单位像素，光信号由光源发射，以及初始化电路，被配置为以预定周期初始化累积电路。

4. 发明授权

US08729678B2 Image sensor for stabilizing a black level 有权
标题翻译：用于稳定黑色电平的图像传感器
公开(公告)号：US08729678B2
公开(公告)日：2014-05-20
申请号：US13615451
申请日：2012-09-13
申请人： Eun-Sub Shim , Jung-Chak Ahn , Moo-Sup Lim , Hyung-Jin Bae , Min-Seok Oh
发明人： Eun-Sub Shim , Jung-Chak Ahn , Moo-Sup Lim , Hyung-Jin Bae , Min-Seok Oh
IPC分类号： H01L23/552
CPC分类号： H01L27/14623 , H01L27/1463
摘要： An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.
摘要翻译：图像传感器包括第一像素，第二像素和深沟槽。第一像素形成在半导体衬底的有源区中，并且被配置为测量对应于入射光的光电荷。第二像素形成在半导体衬底的黑 - 黑区域中，并被配置为测量黑色电平。深沟槽在光学黑色区域的边界区域中垂直形成，其中边界区域与有源区域相邻，并且被配置为阻挡来自有源区域的泄漏光和扩散载流子。

5. 发明授权

US09024245B2 Image sensor apparatus using shaded photodetector for time of flight determination 有权
标题翻译：图像传感器设备使用阴影光电探测器进行飞行时间确定
公开(公告)号：US09024245B2
公开(公告)日：2015-05-05
申请号：US13612904
申请日：2012-09-13
申请人： Min-Seok Oh , Moo-Sup Lim , Jung-Chak Ahn , Eun-Sub Shim
发明人： Min-Seok Oh , Moo-Sup Lim , Jung-Chak Ahn , Eun-Sub Shim
IPC分类号： G01S17/89 , G01S7/481 , G01S7/486 , H04N5/341 , H04N5/361 , H04N5/3745
CPC分类号： G01S17/89 , G01S7/4816 , G01S7/4865 , H04N5/341 , H04N5/361 , H04N5/3745
摘要： A unit pixel for an image sensor includes an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current, an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current, a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source, and an initialization circuit configured to initialize the accumulation circuit at a predetermined cycle.
摘要翻译：图像传感器的单位像素包括积累电路，其被配置为通过在飞行时间（TOF）期间累积与暗电流相对应的电荷来产生累积的暗电流，所述累积电路被光学遮蔽以产生暗电流，输出电压产生电路，被配置为基于与累积暗电流相对应的电荷来产生和输出与TOF对应的输出电压;控制电路，被配置为基于输入到所述暗电流的光信号来控制所述输出电压产生电路的操作被物体反射后的单位像素，光信号由光源发射，以及初始化电路，被配置为以预定周期初始化累积电路。

6. 发明授权

US09640571B2 Pixel arrays of image sensors, and image sensors including the pixel arrays 有权
公开(公告)号：US09640571B2
公开(公告)日：2017-05-02
申请号：US14792862
申请日：2015-07-07
申请人： Seung-Sik Kim , Young-Chan Kim , Eun-Sub Shim , Min-Seok Oh , Ji-Won Lee , Moo-Sup Lim , Tae-Han Kim , Dong-Joo Yang
发明人： Seung-Sik Kim , Young-Chan Kim , Eun-Sub Shim , Min-Seok Oh , Ji-Won Lee , Moo-Sup Lim , Tae-Han Kim , Dong-Joo Yang
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14623 , H01L27/14641
摘要： Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.

7. 发明授权

US10136082B2 Method of driving an image sensor, image sensor employing the same, and portable electronic device including the same 有权
公开(公告)号：US10136082B2
公开(公告)日：2018-11-20
申请号：US14616368
申请日：2015-02-06
申请人： Min-Seok Oh , Young-Chan Kim , Eun-Sub Shim , Moo-Sup Lim
发明人： Min-Seok Oh , Young-Chan Kim , Eun-Sub Shim , Moo-Sup Lim
IPC分类号： H04N5/225 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： An image sensor includes a pixel array including at least one unit pixel configured to generate accumulated charges, a correlated double sampler configured to perform a correlated double sampling operation to extract an effective signal component based on a signal component and a reset component from the unit pixel for at least first and second read-out periods, the correlated double sampler configured to read out an image signal during the first read-out period and to read out a light noise signal during the second read-out period, an analog-digital converter configured to convert the image signal into a first digital signal and to convert the light noise signal into a second digital signal and an image compensator configured to generate a compensated image signal based on the second digital signal and the first digital signal.

8. 发明申请

US20160204150A1 IMAGE SENSOR 有权
标题翻译：图像传感器
公开(公告)号：US20160204150A1
公开(公告)日：2016-07-14
申请号：US14990112
申请日：2016-01-07
申请人： Min-Seok Oh , Young-chan Kim , Moo-sup Lim
发明人： Min-Seok Oh , Young-chan Kim , Moo-sup Lim
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14645
摘要： Example embodiments relate to an image sensor supporting a global shutter for minimizing image distortion. An example image sensor includes a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device, which is formed in the semiconductor layer near the first surface and accumulates charges based on light incident via the second surface; a charge storage device, which is formed in the semiconductor layer near the first surface and temporarily stores charges accumulated by the photosensitive device; a first transmission transistor, which transmits charges accumulated by the photosensitive device to the charge storage device and includes a first gate formed on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region, which is formed in the semiconductor layer near the second surface, is apart from the charge storage device, and is arranged above the charge storage device.
摘要翻译：示例性实施例涉及支持用于最小化图像失真的全局快门的图像传感器。示例性图像传感器包括具有彼此相对的第一表面和第二表面的半导体层; 形成在靠近第一表面的半导体层中的光敏器件，并且基于经由第二表面入射的光累积电荷; 电荷存储装置，其形成在靠近第一表面的半导体层中，并临时存储由感光装置累积的电荷; 第一透射晶体管，其将由感光器件积累的电荷传输到电荷存储器件，并且包括形成在半导体层的第一表面上的第一栅极; 并且形成在第二表面附近的半导体层中的泄漏光生电荷漏极区域与电荷存储装置分离，并且被布置在电荷存储装置的上方。

9. 发明授权

US08643012B2 Display substrate and method for manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08643012B2
公开(公告)日：2014-02-04
申请号：US12952744
申请日：2010-11-23
申请人： Min-Seok Oh , Bong-Kyu Shin , Sang-Gab Kim , Eun-Guk Lee , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Min-Seok Oh , Bong-Kyu Shin , Sang-Gab Kim , Eun-Guk Lee , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F1/13439 , G02F2201/50
摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask, Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.
摘要翻译：形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案使用光致抗蚀剂图案作为掩模蚀刻钝化层，对光致抗蚀剂图案的表面进行不均匀的表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。

10. 发明申请

US20130127005A1 PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20130127005A1
公开(公告)日：2013-05-23
申请号：US13561259
申请日：2012-07-30
申请人： Cho-Young Lee , Min-Seok Oh , Yun-Seok Lee , Nam-Kyu Song
发明人： Cho-Young Lee , Min-Seok Oh , Yun-Seok Lee , Nam-Kyu Song
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/022441 , H01L31/0747 , Y02E10/50
摘要： A photovoltaic device and a method of manufacturing the same are disclosed. In one embodiment, the device includes i) a semiconductor substrate, ii) a first conductive semiconductor layer formed on a first region of the semiconductor substrate and iii) a first transparent conductive layer formed on the first conductive semiconductor layer. The device may further include i) a second conductive semiconductor layer formed on a second region of the semiconductor substrate, ii) a second transparent conductive layer formed on the second conductive semiconductor layer and iii) a gap passivation layer interposed between i) the first layers and ii) the second layers, wherein the gap passivation layer has a thickness greater than the sum of the thicknesses of the first layers.
摘要翻译：公开了一种光电器件及其制造方法。在一个实施例中，器件包括i）半导体衬底，ii）形成在半导体衬底的第一区域上的第一导电半导体层，以及iii）形成在第一导电半导体层上的第一透明导电层。所述器件还可以包括i）形成在半导体衬底的第二区域上的第二导电半导体层，ii）形成在第二导电半导体层上的第二透明导电层，以及iii）插入在i）第一层之间的间隙钝化层以及ii）所述第二层，其中所述间隙钝化层的厚度大于所述第一层的厚度之和。

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