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1. 发明授权

US09640571B2 Pixel arrays of image sensors, and image sensors including the pixel arrays 有权
公开(公告)号：US09640571B2
公开(公告)日：2017-05-02
申请号：US14792862
申请日：2015-07-07
申请人： Seung-Sik Kim , Young-Chan Kim , Eun-Sub Shim , Min-Seok Oh , Ji-Won Lee , Moo-Sup Lim , Tae-Han Kim , Dong-Joo Yang
发明人： Seung-Sik Kim , Young-Chan Kim , Eun-Sub Shim , Min-Seok Oh , Ji-Won Lee , Moo-Sup Lim , Tae-Han Kim , Dong-Joo Yang
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14623 , H01L27/14641
摘要： Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.

2. 发明申请

US20160013227A1 PIXEL ARRAYS OF IMAGE SENSORS, AND IMAGE SENSORS INCLUDING THE PIXEL ARRAYS 有权
标题翻译：图像传感器的像素阵列和包含像素阵列的图像传感器
公开(公告)号：US20160013227A1
公开(公告)日：2016-01-14
申请号：US14792862
申请日：2015-07-07
申请人： Seung-Sik KIM , Young-Chan KIM , Eun-Sub Shim , Min-Seok OH , Ji-Won LEE , Moo-Sup LIM , Tae-Han KIM , Dong-Joo YANG
发明人： Seung-Sik KIM , Young-Chan KIM , Eun-Sub Shim , Min-Seok OH , Ji-Won LEE , Moo-Sup LIM , Tae-Han KIM , Dong-Joo YANG
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14623 , H01L27/14641
摘要： Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.
摘要翻译：提供了包括与第一像素相邻的第一像素和第二像素的图像传感器的像素阵列。第一像素可以包括第一光电转换装置，第一电荷存储装置，第一浮动扩散节点和第一传输门。第二像素可以包括第二光电转换装置，第二电荷存储装置，第二浮动扩散节点和第二传输门。像素阵列还可以包括在第一电荷存储装置和第二电荷存储装置两者上的存储栅极。存储门可以具有整体结构。

3. 发明授权

US10136082B2 Method of driving an image sensor, image sensor employing the same, and portable electronic device including the same 有权
公开(公告)号：US10136082B2
公开(公告)日：2018-11-20
申请号：US14616368
申请日：2015-02-06
申请人： Min-Seok Oh , Young-Chan Kim , Eun-Sub Shim , Moo-Sup Lim
发明人： Min-Seok Oh , Young-Chan Kim , Eun-Sub Shim , Moo-Sup Lim
IPC分类号： H04N5/225 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： An image sensor includes a pixel array including at least one unit pixel configured to generate accumulated charges, a correlated double sampler configured to perform a correlated double sampling operation to extract an effective signal component based on a signal component and a reset component from the unit pixel for at least first and second read-out periods, the correlated double sampler configured to read out an image signal during the first read-out period and to read out a light noise signal during the second read-out period, an analog-digital converter configured to convert the image signal into a first digital signal and to convert the light noise signal into a second digital signal and an image compensator configured to generate a compensated image signal based on the second digital signal and the first digital signal.

4. 发明授权

US09024245B2 Image sensor apparatus using shaded photodetector for time of flight determination 有权
标题翻译：图像传感器设备使用阴影光电探测器进行飞行时间确定
公开(公告)号：US09024245B2
公开(公告)日：2015-05-05
申请号：US13612904
申请日：2012-09-13
申请人： Min-Seok Oh , Moo-Sup Lim , Jung-Chak Ahn , Eun-Sub Shim
发明人： Min-Seok Oh , Moo-Sup Lim , Jung-Chak Ahn , Eun-Sub Shim
IPC分类号： G01S17/89 , G01S7/481 , G01S7/486 , H04N5/341 , H04N5/361 , H04N5/3745
CPC分类号： G01S17/89 , G01S7/4816 , G01S7/4865 , H04N5/341 , H04N5/361 , H04N5/3745
摘要： A unit pixel for an image sensor includes an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current, an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current, a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source, and an initialization circuit configured to initialize the accumulation circuit at a predetermined cycle.
摘要翻译：图像传感器的单位像素包括积累电路，其被配置为通过在飞行时间（TOF）期间累积与暗电流相对应的电荷来产生累积的暗电流，所述累积电路被光学遮蔽以产生暗电流，输出电压产生电路，被配置为基于与累积暗电流相对应的电荷来产生和输出与TOF对应的输出电压;控制电路，被配置为基于输入到所述暗电流的光信号来控制所述输出电压产生电路的操作被物体反射后的单位像素，光信号由光源发射，以及初始化电路，被配置为以预定周期初始化累积电路。

5. 发明授权

US08729678B2 Image sensor for stabilizing a black level 有权
标题翻译：用于稳定黑色电平的图像传感器
公开(公告)号：US08729678B2
公开(公告)日：2014-05-20
申请号：US13615451
申请日：2012-09-13
申请人： Eun-Sub Shim , Jung-Chak Ahn , Moo-Sup Lim , Hyung-Jin Bae , Min-Seok Oh
发明人： Eun-Sub Shim , Jung-Chak Ahn , Moo-Sup Lim , Hyung-Jin Bae , Min-Seok Oh
IPC分类号： H01L23/552
CPC分类号： H01L27/14623 , H01L27/1463
摘要： An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.
摘要翻译：图像传感器包括第一像素，第二像素和深沟槽。第一像素形成在半导体衬底的有源区中，并且被配置为测量对应于入射光的光电荷。第二像素形成在半导体衬底的黑 - 黑区域中，并被配置为测量黑色电平。深沟槽在光学黑色区域的边界区域中垂直形成，其中边界区域与有源区域相邻，并且被配置为阻挡来自有源区域的泄漏光和扩散载流子。

6. 发明申请

US20120050600A1 UNIT PIXEL ARRAY AND IMAGE SENSOR HAVING THE SAME 有权
标题翻译：单元像素阵列和图像传感器
公开(公告)号：US20120050600A1
公开(公告)日：2012-03-01
申请号：US13218550
申请日：2011-08-26
申请人： Jung-Chak AHN , Bum-Suk Kim , Kyung-Ho Lee , Eun-Sub Shim
发明人： Jung-Chak AHN , Bum-Suk Kim , Kyung-Ho Lee , Eun-Sub Shim
IPC分类号： H04N9/07 , H01L27/146
CPC分类号： H01L27/14629 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of unit pixels, an interlayer insulating layer disposed on a front side of the semiconductor substrate, a plurality of color filters disposed on a back side of the semiconductor substrate, a plurality of light path converters, each of the light path converters being disposed adjacent to at least one color filter and having a pair of slanted side edges extending from opposing ends of a horizontal bottom edge, and a plurality of micro lenses disposed on the color filters.
摘要翻译：图像传感器的单位像素阵列包括具有多个单位像素的半导体衬底，设置在半导体衬底的前侧的层间绝缘层，设置在半导体衬底背面的多个滤色器，多个每个光路转换器设置成与至少一个滤色器相邻，并且具有从水平底部边缘的相对端延伸的一对倾斜侧边缘和设置在滤色器上的多个微透镜。

7. 发明授权

US09034682B2 Backside illuminated image sensor and method of manufacturing the same 有权
标题翻译：背面照明图像传感器及其制造方法
公开(公告)号：US09034682B2
公开(公告)日：2015-05-19
申请号：US13177253
申请日：2011-07-06
申请人： Eun-Sub Shim , Jung-Chak Ahn , Bum-Suk Kim , Kyung-Ho Lee
发明人： Eun-Sub Shim , Jung-Chak Ahn , Bum-Suk Kim , Kyung-Ho Lee
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14625 , H01L27/14685 , H01L27/14687
摘要： A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.
摘要翻译：一种制造背面照射图像传感器的方法，包括在第一半导体层中形成第一隔离层，使得第一隔离层限定第一半导体层中的像素阵列的像素，在第一半导体层的第一表面上形成第二半导体层所述第一半导体层在所述第二半导体层中形成第二隔离层，使得所述第二隔离层限定所述第二半导体层中的有源器件区域，通过将杂质注入到所述第二半导体层的第一表面中来形成光检测器和电路器件所述第二半导体层的第一表面背离所述第一半导体层，在所述第二半导体层的所述第一表面上形成布线层，并且在所述第一半导体层的第二表面上形成滤光器层。

8. 发明授权

US08970768B2 Unit pixel array and image sensor having the same 有权
标题翻译：单位像素阵列和具有相同像素的图像传感器
公开(公告)号：US08970768B2
公开(公告)日：2015-03-03
申请号：US13218550
申请日：2011-08-26
申请人： Jung-Chak Ahn , Bum-Suk Kim , Kyung-Ho Lee , Eun-Sub Shim
发明人： Jung-Chak Ahn , Bum-Suk Kim , Kyung-Ho Lee , Eun-Sub Shim
IPC分类号： H04N9/083 , H04N3/14 , H04N5/335 , H04N9/04 , H04N5/225 , H01L31/062 , H01L31/113 , H01L21/00 , H01L27/146
CPC分类号： H01L27/14629 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of unit pixels, an interlayer insulating layer disposed on a front side of the semiconductor substrate, a plurality of color filters disposed on a back side of the semiconductor substrate, a plurality of light path converters, each of the light path converters being disposed adjacent to at least one color filter and having a pair of slanted side edges extending from opposing ends of a horizontal bottom edge, and a plurality of micro lenses disposed on the color filters.
摘要翻译：图像传感器的单位像素阵列包括具有多个单位像素的半导体衬底，设置在半导体衬底的前侧的层间绝缘层，设置在半导体衬底背面的多个滤色器，多个每个光路转换器设置成与至少一个滤色器相邻，并且具有从水平底部边缘的相对端延伸的一对倾斜侧边缘和设置在滤色器上的多个微透镜。

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