会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF
    • 薄膜晶体管基板及其制造方法
    • US20110151631A1
    • 2011-06-23
    • US13018309
    • 2011-01-31
    • Jong Hyun CHOUNGHong Sick PARKSun Young HONGBong Kyun KIMBong Kyu SHINWon Suk SHINByeong Jin LEE
    • Jong Hyun CHOUNGHong Sick PARKSun Young HONGBong Kyun KIMBong Kyu SHINWon Suk SHINByeong Jin LEE
    • H01L21/336
    • H01L27/1288H01L27/124H01L27/1248
    • A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.
    • 薄膜晶体管基板和薄膜晶体管基板的制造方法包括形成栅极线和数据线,该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交,薄膜晶体管电连接到 栅极线和数据线,以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案,并形成连接到薄膜晶体管的像素电极。
    • 6. 发明授权
    • Thin film transistor substrate and method of manufacturing thereof
    • 薄膜晶体管基板及其制造方法
    • US08158470B2
    • 2012-04-17
    • US13018309
    • 2011-01-31
    • Jong Hyun ChoungHong Sick ParkSun Young HongBong Kyun KimBong Kyu ShinWon Suk ShinByeong Jin Lee
    • Jong Hyun ChoungHong Sick ParkSun Young HongBong Kyun KimBong Kyu ShinWon Suk ShinByeong Jin Lee
    • H01L21/336
    • H01L27/1288H01L27/124H01L27/1248
    • A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.
    • 薄膜晶体管基板和制造薄膜晶体管基板的方法包括:形成栅极线和数据线,其中栅极绝缘层相互插入并限定基板上的像素区域,薄膜晶体管电连接到 栅极线和数据线,以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案,并形成连接到薄膜晶体管的像素电极。
    • 9. 发明授权
    • Thin film transistor substrate and method of manufacturing thereof
    • 薄膜晶体管基板及其制造方法
    • US07901965B2
    • 2011-03-08
    • US11706012
    • 2007-02-12
    • Jong Hyun ChoungHong Sick ParkSun Young HongBong Kyun KimBong Kyu ShinWon Suk ShinByeong Jin Lee
    • Jong Hyun ChoungHong Sick ParkSun Young HongBong Kyun KimBong Kyu ShinWon Suk ShinByeong Jin Lee
    • H01L21/00
    • H01L27/1288H01L27/124H01L27/1248
    • A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.
    • 薄膜晶体管基板和制造薄膜晶体管基板的方法包括:形成栅极线和数据线,该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交;薄膜晶体管,电连接到 栅极线和数据线,以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案,并形成连接到薄膜晶体管的像素电极。