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1. 发明授权

US09887217B2 Pixels of image sensors, image sensors including the pixels, and image processing systems including the image sensors 有权
公开(公告)号：US09887217B2
公开(公告)日：2018-02-06
申请号：US14856618
申请日：2015-09-17
申请人： Jung Chak Ahn , Seung Joo Nah , Kyung Ho Lee , Young Woo Jung
发明人： Jung Chak Ahn , Seung Joo Nah , Kyung Ho Lee , Young Woo Jung
IPC分类号： H01L27/00 , H01L27/146 , H04N5/353 , H04N5/355 , H04N5/359 , H04N5/3745
CPC分类号： H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H04N5/353 , H04N5/3559 , H04N5/3592 , H04N5/37452
摘要： Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident light during a first period, a storage diode configured to store photocharges accumulated in the photo diode and a storage gate configured to control transfer of the photocharges accumulated in the photo diode to the storage diode. The storage gate may include a vertical gate structure extending toward the photo diode.

2. 发明申请

US20160111461A1 Pixels Of Image Sensors, Image Sensors Including The Pixels, And Image Processing Systems Including The Image Sensors 有权
标题翻译：图像传感器的像素，包括像素的图像传感器和包括图像传感器的图像处理系统
公开(公告)号：US20160111461A1
公开(公告)日：2016-04-21
申请号：US14856618
申请日：2015-09-17
申请人： Jung Chak Ahn , Seung Joo NAH , Kyung Ho LEE , Young Woo JUNG
发明人： Jung Chak Ahn , Seung Joo NAH , Kyung Ho LEE , Young Woo JUNG
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H04N5/353 , H04N5/3559 , H04N5/3592 , H04N5/37452
摘要： Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident light during a first period, a storage diode configured to store photocharges accumulated in the photo diode and a storage gate configured to control transfer of the photocharges accumulated in the photo diode to the storage diode. The storage gate may include a vertical gate structure extending toward the photo diode.
摘要翻译：提供图像传感器的像素。像素可以包括光电二极管，其被配置为在第一周期期间累积对应于入射光产生的光电荷，存储二极管，其被配置为存储累积在光电二极管中的光电荷，以及存储栅极，其被配置为控制累积在光电二极管中的光电荷的转移到存储二极管。存储栅极可以包括朝向光电二极管延伸的垂直栅极结构。

3. 发明申请

US20140049670A1 IMAGE SENSOR FOR OUTPUTTING RGB BAYER SIGNAL THROUGH INTERNAL CONVERSION AND IMAGE PROCESSING APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：用于通过内部转换和图像处理装置输出RGB BAYER信号的图像传感器，包括它们
公开(公告)号：US20140049670A1
公开(公告)日：2014-02-20
申请号：US14058755
申请日：2013-10-21
申请人： Bum Suk KIM , Jung Chak AHN , Tae Sub JUNG
发明人： Bum Suk KIM , Jung Chak AHN , Tae Sub JUNG
IPC分类号： H04N5/378
CPC分类号： H04N5/378 , H04N5/3745 , H04N9/045
摘要： The image sensor includes a pixel array including a plurality of pixels arranged in a non-red-green-blue (RGB) Bayer pattern, an analog-to-digital converter configured to convert an analog pixel signal output from each of the pixels into a digital pixel signal and an RGB converter configured to convert the digital pixel signal into an RGB Bayer signal. Accordingly, the image sensor is compatible with a universal image signal processor (ISP), which receives and processes RGB Bayer signals, without an additional compatible device or module.
摘要翻译：图像传感器包括：像素阵列，包括以非红 - 绿 - 蓝（RGB）拜耳图案排列的多个像素;模拟 - 数字转换器，被配置为将从每个像素输出的模拟像素信号转换为数字像素信号和被配置为将数字像素信号转换为RGB拜耳信号的RGB转换器。因此，图像传感器与通用图像信号处理器（ISP）兼容，该处理器接收并处理RGB拜耳信号，而没有附加的兼容设备或模块。

4. 发明申请

US20130320406A1 IMAGE SENSOR DEVICES HAVING DUAL-GATED CHARGE STORAGE REGIONS THEREIN 审中-公开
标题翻译：具有双栅充电储存区域的图像传感器装置
公开(公告)号：US20130320406A1
公开(公告)日：2013-12-05
申请号：US13962602
申请日：2013-08-08
申请人： Eric R. Fossum , Young Gu Jin , Soo Jung Hwang , Dae Kil Cha , Yoon Dong Park , Jung Chak Ahn , Kyoung Sik Moon
发明人： Eric R. Fossum , Young Gu Jin , Soo Jung Hwang , Dae Kil Cha , Yoon Dong Park , Jung Chak Ahn , Kyoung Sik Moon
IPC分类号： H01L27/148
CPC分类号： H01L27/14812 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37452
摘要： An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.
摘要翻译：图像传感器装置可以包括衬底内的双门控电荷存储区域。双门控电荷存储区域包括公共电荷产生区域内的第一和第二二极管。该电荷产生区被配置为接收入射在图像传感器装置的表面上的光。第一和第二二极管分别包括响应于第一和第二栅极信号的相应的第一导电类型区域。这些第一和第二门信号在非重叠时间间隔期间是有效的。

5. 发明授权

US08563914B2 Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays 有权
标题翻译：单位像素包括升压电容器，包括单位像素的像素阵列和包括像素阵列的光检测装置
公开(公告)号：US08563914B2
公开(公告)日：2013-10-22
申请号：US12801196
申请日：2010-05-27
申请人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
发明人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H04N5/3597 , H04N5/363 , H04N5/37452
摘要： A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.
摘要翻译：能够实现浮动扩散区域的完全初始化的单位像素，包括单位像素的像素阵列，以及包括该像素阵列的受光器件。单位像素包括光电检测器，用于将从光电检测器产生的电荷传输到浮动扩散区域的传输晶体管，用于初始化浮动扩散区域的复位晶体管，以及具有连接到浮动扩散区域的第一端子的升压电容器，端子，施加升压电压。

6. 发明授权

US08487351B2 Image sensor and image sensing system including the same 有权
标题翻译：图像传感器和图像传感系统包括相同的
公开(公告)号：US08487351B2
公开(公告)日：2013-07-16
申请号：US12591632
申请日：2009-11-25
申请人： Kyung Ho Lee , Dong-Yoon Jang , Jung Chak Ahn , Moo Sup Lim , Yong Jei Lee , Jong Eun Park
发明人： Kyung Ho Lee , Dong-Yoon Jang , Jung Chak Ahn , Moo Sup Lim , Yong Jei Lee , Jong Eun Park
IPC分类号： H01L27/148
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643
摘要： The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.
摘要翻译：提供了图像传感器和包括其的图像感测系统。图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。图像传感器包括至少一个阻热器或隔热罩。可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

7. 发明授权

US08164127B2 Image sensor including a pixel cell having an epitaxial layer, system having the same, and method of forming a pixel cell 有权
标题翻译：图像传感器包括具有外延层的像素单元，具有该外延层的像素单元，以及形成像素单元的方法
公开(公告)号：US08164127B2
公开(公告)日：2012-04-24
申请号：US12585501
申请日：2009-09-16
申请人： Kyung-Ho Lee , Kwang-il Jung , Jung-Chak Ahn , Yi-Tae Kim , Kyoung-Sik Moon , Bum-Suk Kim , Young-Bae Kee , Dong-Young Lee , Tae-Sub Jung , Kang-Sun Lee
发明人： Kyung-Ho Lee , Kwang-il Jung , Jung-Chak Ahn , Yi-Tae Kim , Kyoung-Sik Moon , Bum-Suk Kim , Young-Bae Kee , Dong-Young Lee , Tae-Sub Jung , Kang-Sun Lee
IPC分类号： H01L31/113
CPC分类号： H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.
摘要翻译：像素单元包括外延层中的衬底，外延层和光转换器件。外延层具有压花形状的掺杂浓度分布，并且包括层叠在基板上的多个层。光转换装置不包括在垂直方向上具有恒定电位的中性区域。因此，包括像素单元的图像传感器具有高量化效率，并且光转换装置之间的串扰减小。

8. 发明授权

US08003424B2 Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag 失效
标题翻译：用于制造具有袖珍光电二极管的CMOS图像传感器以最小化图像滞后的方法
公开(公告)号：US08003424B2
公开(公告)日：2011-08-23
申请号：US11983913
申请日：2007-11-13
申请人： Kyung-Ho Lee , Yi-Tae Kim , Jung-Chak Ahn , Sae-Young Kim
发明人： Kyung-Ho Lee , Yi-Tae Kim , Jung-Chak Ahn , Sae-Young Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14689 , H01L31/035281
摘要： A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.
摘要翻译： CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。浮动扩散区域是第二导电类型。转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。

9. 发明申请

US20110193147A1 BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：背景照明CMOS图像传感器及其制造方法
公开(公告)号：US20110193147A1
公开(公告)日：2011-08-11
申请号：US12984404
申请日：2011-01-04
申请人： Jung-Chak Ahn , Kyung-ho Lee
发明人： Jung-Chak Ahn , Kyung-ho Lee
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/1461 , H01L27/14645 , H01L27/14689
摘要： Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.
摘要翻译：具有凸形光接收面的背面照明CMOS图像传感器及其制造方法。背面照明CMOS图像传感器包括金属层，绝缘层和光电二极管。绝缘层位于金属层上。光电二极管在绝缘层上，并且接收光的光电二极管的顶面是弯曲的。包括具有凸表面的光电二极管的背面照明CMOS图像传感器的制造方法包括在光电二极管的受光面的一部分上形成小于光电二极管的岛，并退火该岛以形成具有凸光的光电二极管接受面孔

10. 发明申请

US20110096215A1 Image Sensors and Methods of Manufacturing Image Sensors 有权
标题翻译：图像传感器和制造图像传感器的方法
公开(公告)号：US20110096215A1
公开(公告)日：2011-04-28
申请号：US12909948
申请日：2010-10-22
申请人： Sang-Jun Choi , Yoon-Dong Park , Chris Hong , Dae-Lok Bae , Jung-Chak Ahn , Chang-Rok Moon , June-Mo Koo , Suk-Pil Kim , Hoon-Sang Oh
发明人： Sang-Jun Choi , Yoon-Dong Park , Chris Hong , Dae-Lok Bae , Jung-Chak Ahn , Chang-Rok Moon , June-Mo Koo , Suk-Pil Kim , Hoon-Sang Oh
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14641 , H01L21/76898 , H01L23/481 , H01L27/14612 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/14687 , H01L2224/9212 , H01L2224/80896 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82
摘要： An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.
摘要翻译：图像传感器包括：第一基板，包括驱动元件，第一基板上的第一绝缘层和驱动元件;第二基板，包括光电转换元件;以及第二绝缘层，在第二基板上和光电转换元件。第二绝缘层的表面位于第一绝缘层的上表面上。图像传感器包括穿透第二绝缘层和第一绝缘层的一部分的导电连接器。还公开了形成图像传感器的方法。

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