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1. 发明授权

US06849151B2 Monitoring substrate processing by detecting reflectively diffracted light 失效
$Monitoring substrate processing by detecting reflectively diffracted light$
标题翻译：通过检测反射衍射光来监测基板处理
公开(公告)号：US06849151B2
公开(公告)日：2005-02-01
申请号：US10215065
申请日：2002-08-07
申请人： Michael S. Barnes , John P. Holland , David S. L. Mui , Wei Liu
发明人： Michael S. Barnes , John P. Holland , David S. L. Mui , Wei Liu
IPC分类号： C23C14/54 , C23C16/52 , G01N21/47 , G01N21/95 , G01N21/956 , H01J37/32 , H05H1/00 , C23C16/00 , H01L21/00
CPC分类号： H01J37/321 , C23C14/547 , C23C16/52 , G01N21/4788 , G01N21/9501 , G01N21/956 , H01J37/32935
摘要： A substrate is placed in a process zone and an energized process gas is maintained in the process zone to process the substrate. A light beam is reflectively diffracted from a pattern of features of the substrate being processed, the reflected beam is monitored, and a signal is generated in relation to the monitored beam. During processing, a width of the features of the substrate can change. The generated signal is evaluated to detect the occurrence of a change in the width of the features.
摘要翻译：将基底放置在处理区中，并且在处理区中保持通电的工艺气体以处理衬底。光束从被处理的衬底的特征的图案反射衍射，监测反射光束，并且相对于被监视的光束产生信号。在处理期间，衬底的特征的宽度可以改变。评估产生的信号以检测特征宽度变化的发生。

2. 发明授权

US07482178B2 Chamber stability monitoring using an integrated metrology tool 有权
标题翻译：室内稳定性监测采用综合计量工具
公开(公告)号：US07482178B2
公开(公告)日：2009-01-27
申请号：US10636468
申请日：2003-08-06
申请人： David S. L. Mui , Wei Liu , Hiroki Sasano
发明人： David S. L. Mui , Wei Liu , Hiroki Sasano
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L22/20 , H01L21/3065 , H01L21/3081
摘要： A method and apparatus for monitoring the stability of a substrate processing chamber and for adjusting the process recipe. Thickness and CD measurement data are collected before wafer processing and after wafer processing by an integrated or an in-situ metrology tool to monitor process chamber stability and to adjust the process recipe. The real time chamber stability monitoring enabled by the integrated metrology tool reduces the risk and cost of wafer mis-processing. The real time process recipe adjustment allows tightening of the process recipe. Process development cycle can also be reduced by the method and apparatus.
摘要翻译：一种用于监测基板处理室的稳定性并用于调整工艺配方的方法和装置。厚度和CD测量数据在晶片处理之前和通过集成或原位计量工具进行晶片处理之后收集以监测处理室稳定性并调整工艺配方。通过集成度量工具实现的实时室稳定性监测降低了晶片错误处理的风险和成本。实时过程配方调整可以缩短加工配方。方法和装置也可以减少过程开发周期。

3. 发明授权

US06924191B2 Method for fabricating a gate structure of a field effect transistor 有权
标题翻译：用于制造场效应晶体管的栅极结构的方法
公开(公告)号：US06924191B2
公开(公告)日：2005-08-02
申请号：US10463460
申请日：2003-06-16
申请人： Wei Liu , Thorsten B. Lill , David S. L. Mui , Christopher Dennis Bencher
发明人： Wei Liu , Thorsten B. Lill , David S. L. Mui , Christopher Dennis Bencher
IPC分类号： H01L21/033 , H01L21/28 , H01L21/311 , H01L21/3213 , H01L21/336 , H01L21/8242
CPC分类号： H01L21/31122 , H01L21/0337 , H01L21/0338 , H01L21/28114 , H01L21/28123 , H01L21/31116 , H01L21/31138 , H01L21/32137 , H01L21/32139 , H01L29/66545 , H01L29/66583
摘要： A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask on regions of the substrate. The first mask is defined using lithographic techniques. A second mask is then conformably formed on one or more sidewalls of the first mask. The features are formed on the substrate by removing the first mask and then etching the substrate using the second mask as an etch mask.
摘要翻译：一种在尺寸减小的基板上制造特征的方法。特征通过在衬底的区域上限定第一掩模而形成。第一个掩模使用光刻技术定义。然后在第一掩模的一个或多个侧壁上顺应地形成第二掩模。通过去除第一掩模在衬底上形成特征，然后使用第二掩模作为蚀刻掩模蚀刻衬底。

4. 发明授权

US06924088B2 Method and system for realtime CD microloading control 有权
标题翻译：实时CD微控制方法与系统
公开(公告)号：US06924088B2
公开(公告)日：2005-08-02
申请号：US10464479
申请日：2003-06-18
申请人： David S. L. Mui , Wei Liu , Shashank C. Deshmukh , Hiroki Sasano
发明人： David S. L. Mui , Wei Liu , Shashank C. Deshmukh , Hiroki Sasano
IPC分类号： G03F7/20 , H01L21/66 , G01B11/02
CPC分类号： G03F7/70625 , H01L22/20 , Y10S977/854
摘要： A method and apparatus for processing a semiconductor wafer is provided for reducing CD microloading variation. OCD metrology is used to inspect a wafer to determine pre-etch CD microloading, by measuring the CD of dense and isolated photoresist lines. Other parameters can also be measured or otherwise determined, such as sidewall profile, photoresist layer thickness, underlying layer thickness, photoresist pattern density, open area, etc. The inspection results are fed forward to the etcher to determine process parameters, such as resist trim time and/or etch conditions, thereby achieving the desired post-etch CD microloading. In certain embodiments, the CD and profile measurements, trim, etch processing and post-etch cleaning are performed at a single module in a controlled environment. All of the transfer and processing steps performed by the module are performed in a clean environment, thereby increasing yield by avoiding exposing the wafer to the atmosphere and possible contamination between steps.
摘要翻译：提供了一种用于处理半导体晶片的方法和设备，用于减少CD微型负载变化。 OCD测量用于通过测量致密和隔离的光致抗蚀剂线的CD来检查晶片以确定预蚀刻CD微载入。也可以测量或确定其它参数，例如侧壁轮廓，光致抗蚀剂层厚度，下层厚度，光致抗蚀剂图案密度，开放面积等。检查结果向前馈送到蚀刻器以确定工艺参数，例如抗蚀剂修整时间和/或蚀刻条件，从而实现所需的后蚀刻CD微加载。在某些实施例中，CD和轮廓测量，修剪，蚀刻处理和蚀刻后清洁在受控环境中的单个模块执行。模块执行的所有转移和处理步骤都在干净的环境中进行，从而通过避免将晶片暴露在大气中并在步骤之间可能的污染来提高产量。

5. 发明授权

US06858361B2 Methodology for repeatable post etch CD in a production tool 失效
标题翻译：在生产工具中可重复的后蚀刻CD的方法
公开(公告)号：US06858361B2
公开(公告)日：2005-02-22
申请号：US10238453
申请日：2002-09-09
申请人： David S. L. Mui , Hiroki Sasano , Wei Liu
发明人： David S. L. Mui , Hiroki Sasano , Wei Liu
IPC分类号： G03F7/20 , H01L21/66 , G01B11/14
CPC分类号： G03F7/70625 , H01L22/20
摘要： A method and apparatus for processing a semiconductor wafer is provided for reducing dimensional variation by feeding forward information relating to photoresist mask CD and profile to adjust the next process the inspected wafer will undergo (e.g., a photoresist trim process). After the processing step, dimensions of a structure formed by the process, such as the CD of a gate formed by the process, are measured, and this information is fed back to the process tool to adjust the process for the next wafer to further reduce dimensional variation. By taking into account photoresist CD and profile variation when choosing a resist trim recipe, post-etch CD is decoupled from pre-etch CD and profile. With automatic compensation for pre-etch CD, a very tight distribution of post-etch CD is achieved. In certain embodiments, the CD and profile measurements, trim, etch processing and post-etch cleaning are performed at a single module in a controlled environment. All of the transfer and processing steps performed by the module are performed in a clean environment, thereby increasing yield by avoiding exposing the wafer to the atmosphere and possible contamination between steps.
摘要翻译：提供了一种用于处理半导体晶片的方法和装置，用于通过馈送与光致抗蚀剂掩模CD和轮廓相关的信息来减小尺寸变化，以调整被检查的晶片将经历的下一个处理（例如光致抗蚀剂修整处理）。在处理步骤之后，测量由该工艺形成的结构的尺寸，例如通过该工艺形成的浇口的CD，并且将该信息反馈到处理工具以调整下一个晶片的工艺以进一步减少尺寸变化。通过在选择抗蚀剂修整配方时考虑光致抗蚀剂CD和轮廓变化，后蚀刻CD与预蚀刻CD和轮廓分离。通过对预蚀刻光盘进行自动补偿，可以实现非常紧密的后蚀刻光盘分配。在某些实施例中，CD和轮廓测量，修剪，蚀刻处理和蚀刻后清洁在受控环境中的单个模块执行。模块执行的所有转移和处理步骤都在干净的环境中进行，从而通过避免将晶片暴露在大气中并在步骤之间可能的污染来提高产量。

6. 发明授权

US08617993B2 Method of reducing pattern collapse in high aspect ratio nanostructures 有权
标题翻译：降低高纵横比纳米结构中图案塌陷的方法
公开(公告)号：US08617993B2
公开(公告)日：2013-12-31
申请号：US12697862
申请日：2010-02-01
申请人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S. L. Mui , Katrina Mikhaylichenko
发明人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S. L. Mui , Katrina Mikhaylichenko
IPC分类号： H01L21/302 , H01L21/461 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02057
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在涉及半导体器件制造的一些严格处理过程中保护精细的纳米结构。处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。处理可以包括施加化学改变纳米结构表面的底漆，防止在随后的湿清洁过程中它们被损坏。然后可以进一步处理晶片，例如湿式清洁工艺，随后进行干燥处理。纳米结构的增加的疏水性有助于减少或防止纳米结构的崩溃。

7. 发明授权

US08314055B2 Materials and systems for advanced substrate cleaning 有权
标题翻译：用于高级基材清洗的材料和系统
公开(公告)号：US08314055B2
公开(公告)日：2012-11-20
申请号：US12503486
申请日：2009-07-15
申请人： David S. L. Mui , Ji Zhu , Arjun Mendiratta
发明人： David S. L. Mui , Ji Zhu , Arjun Mendiratta
IPC分类号： C11D7/32
CPC分类号： B08B7/0014 , C11D3/3746 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/02071 , H01L21/6704 , H01L21/67051
摘要： The embodiments of the present invention provide improved materials, apparatus, and methods for cleaning wafer surfaces, especially surfaces of patterned wafers (or substrates). The cleaning materials, apparatus, and methods discussed have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning material includes polymers of one or more polymeric compounds. The cleaning materials can be used in a wide range of viscosity and pH to clean different types of surfaces. The cleaning materials are in liquid phase, and deform around device features to capture the contaminants on the substrate. The polymers entrap the contaminants preventing their return to the substrate surface. The cleaning apparatus is designed to dispense and rinse cleaning materials with a range of viscosities.
摘要翻译：本发明的实施例提供用于清洁晶片表面，特别是图案化晶片（或基板）的表面的改进的材料，装置和方法。所讨论的清洁材料，设备和方法具有在清洁具有精细特征的图案化基底而没有实质上损害特征的优点。清洁材料包括一种或多种聚合物的聚合物。清洁材料可以在宽范围的粘度和pH范围内使用以清洁不同类型的表面。清洁材料处于液相，并围绕设备特征变形以捕获衬底上的污染物。聚合物捕获污染物，防止其返回到基底表面。清洁设备设计成可以分配和冲洗具有一定粘度范围的清洁材料。

8. 发明授权

US06699399B1 Self-cleaning etch process 失效
标题翻译：自清洁蚀刻工艺
公开(公告)号：US06699399B1
公开(公告)日：2004-03-02
申请号：US09657793
申请日：2000-09-08
申请人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
发明人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
IPC分类号： C23F400
CPC分类号： H01L21/02071 , Y10S438/905
摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.
摘要翻译：用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除基本上所有由工艺气体沉积的蚀刻残留物。本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

9. 发明授权

US08211846B2 Materials for particle removal by single-phase and two-phase media 有权
标题翻译：用于通过单相和两相介质去除颗粒的材料
公开(公告)号：US08211846B2
公开(公告)日：2012-07-03
申请号：US12131654
申请日：2008-06-02
申请人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： C11D1/00 , C11D3/26 , C11D3/37
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供用于清洁具有精细特征的图案化衬底的改进材料。清洁材料在清洁具有精细特征的图案化基材上具有优点，而基本上不损坏特征。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

10. 发明申请

US20090151757A1 APPARATUS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA 有权
标题翻译：用于单相和两相介质去除颗粒的装置
公开(公告)号：US20090151757A1
公开(公告)日：2009-06-18
申请号：US12131667
申请日：2008-06-02
申请人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： B08B3/04 , C11D17/00
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供了用清洁材料清洁具有精细特征的图案化衬底的设备。使用清洁材料的设备具有清洁具有精细特征的图案化基材而不会显着损害特征的优点。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

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