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1. 发明授权

US06699399B1 Self-cleaning etch process 失效
标题翻译：自清洁蚀刻工艺
公开(公告)号：US06699399B1
公开(公告)日：2004-03-02
申请号：US09657793
申请日：2000-09-08
申请人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
发明人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
IPC分类号： C23F400
CPC分类号： H01L21/02071 , Y10S438/905
摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.
摘要翻译：用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除基本上所有由工艺气体沉积的蚀刻残留物。本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

2. 发明授权

US6136211A Self-cleaning etch process 失效
标题翻译：自清洁蚀刻工艺
公开(公告)号：US6136211A
公开(公告)日：2000-10-24
申请号：US969122
申请日：1997-11-12
申请人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
发明人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/3213 , B08B9/00
CPC分类号： H01L21/02071 , Y10S438/905
摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.
摘要翻译：用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除基本上所有由工艺气体沉积的蚀刻残余物。本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

3. 发明授权

US5801386A Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same 失效
标题翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法
公开(公告)号：US5801386A
公开(公告)日：1998-09-01
申请号：US653212
申请日：1996-05-28
申请人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
发明人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
IPC分类号： H01J37/32 , H01J37/244
CPC分类号： H01J37/32935
摘要： Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.
摘要翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法。该装置包含第一绝缘体层，通过图案化和蚀刻铜层压体而形成一个或多个导电集电极焊盘。每个集电极焊盘连接到从每个集电极焊盘延伸到第一绝缘体层的边缘的导电引线（例如印刷电路迹线）。第二绝缘体层位于第一绝缘体层之上，使得集电极焊盘及其相应的引线夹在两个绝缘体层之间。使用粘合剂将第二绝缘体固定到第一绝缘体和集电板。集电极焊盘通过由第二绝缘体层限定的孔暴露于等离子体。

4. 发明授权

US06787054B2 Two-stage etching process 失效
标题翻译：两级蚀刻工艺
公开(公告)号：US06787054B2
公开(公告)日：2004-09-07
申请号：US10358086
申请日：2003-02-03
申请人： Xikun Wang , Scott Williams , Shaoher X. Pan
发明人： Xikun Wang , Scott Williams , Shaoher X. Pan
IPC分类号： C23F100
CPC分类号： H01J37/321 , H01L21/3065 , H01L21/3081 , H01L21/31116 , H01L21/32137 , Y10S134/902 , Y10S438/905 , Y10S438/906
摘要： A process for etching a substrate and removing etch residue deposited on the surfaces in the etching chamber has two stages. In the first stage, an energized first process gas is provided in the chamber, and in the second stage, an energized second process gas is provided in the chamber. The energized first process gas comprises SF6 and Ar, the volumetric flow ratio of SF6 to other components of the first process gas being from about 5:1 to about 1:10. The energized second process gas comprises CF4 and Ar, the volumetric flow ratio of CF4 to other components of the second process gas being from about 1:0 to about 1:10.
摘要翻译：用于蚀刻基板并去除沉积在蚀刻室中的表面上的蚀刻残余物的方法具有两个阶段。在第一阶段中，在腔室中设置通电的第一处理气体，在第二阶段中，在室中设置通电的第二处理气体。通电的第一工艺气体包括SF 6和Ar，SF 6与第一工艺气体的其它组分的体积流量比为约5:1至约1:10。通电的第二工艺气体包括CF 4和Ar，CF 4与第二工艺气体的其它组分的体积流量比为约1:0至约1:10。

5. 发明授权

US06527968B1 Two-stage self-cleaning silicon etch process 失效
标题翻译：两级自清洁硅蚀刻工艺
公开(公告)号：US06527968B1
公开(公告)日：2003-03-04
申请号：US09536057
申请日：2000-03-27
申请人： Xikun Wang , Scott Williams , Shaoher X. Pan
发明人： Xikun Wang , Scott Williams , Shaoher X. Pan
IPC分类号： B44C122
CPC分类号： H01J37/321 , H01L21/3065 , H01L21/3081 , H01L21/31116 , H01L21/32137 , Y10S134/902 , Y10S438/905 , Y10S438/906
摘要： A process for etching a substrate 25 in an etching chamber 105, and simultaneously removing etch residue deposited on the surfaces of the walls 110 and components of the etching chamber 105. In one version, a two-stage method of opening a nitride mask layer on the substrate includes a first stage of providing a highly chemically reactive process gas in the chamber 105 to etch the nitride layer 32 and/or an underlying oxide layer 34, and a second stage of providing a less chemically reactive process gas in the chamber to etch the nitride layer 32 and/or the oxide layer 34 at a slower rate than the first stage. The first and second stage process gases may each comprise a fluorine containing gas, with the fluorine ratio of the first gas higher than the fluorine ratio of the second gas.
摘要翻译：用于在蚀刻室105中蚀刻基板25并同时去除沉积在壁110的表面上的蚀刻残留物和蚀刻室105的部件的方法。在一种形式中，将氮化物掩模层打开的两阶段方法衬底包括在室105中提供高度化学反应的工艺气体以蚀刻氮化物层32和/或下面的氧化物层34的第一阶段，以及在室中提供较少化学反应性工艺气体以蚀刻的第二阶段氮化物层32和/或氧化物层34的速度比第一级慢。第一和第二阶段工艺气体可以各自包含含氟气体，其中第一气体的氟比率高于第二气体的氟比率。

6. 发明授权

US08313963B2 Light emitting device 有权
公开(公告)号：US08313963B2
公开(公告)日：2012-11-20
申请号：US12767577
申请日：2010-04-26
申请人： Shaoher X. Pan
发明人： Shaoher X. Pan
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L33/10 , H01L33/20 , H01L33/32
摘要： A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

7. 发明授权

US08304794B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08304794B2
公开(公告)日：2012-11-06
申请号：US13286108
申请日：2011-10-31
申请人： Shaoher X. Pan
发明人： Shaoher X. Pan
IPC分类号： H01L29/22 , H01L29/04
CPC分类号： H01L33/24 , H01L33/10 , H01L33/20 , H01L33/32
摘要： A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.
摘要翻译：发光器件包括具有第一表面和不平行于第一表面的第二表面的衬底，以及设置在第二表面上以发光的发光层。发光层具有不与第一面平行的发光面。

8. 发明申请

US20120241809A1 MANUFACTURING PROCESS FOR SOLID STATE LIGHTING DEVICE ON A CONDUCTIVE SUBSTRATE 有权
标题翻译：导电基板上固态照明装置的制造工艺
公开(公告)号：US20120241809A1
公开(公告)日：2012-09-27
申请号：US13489955
申请日：2012-06-06
申请人： Shaoher X. Pan , Jay Chen
发明人： Shaoher X. Pan , Jay Chen
IPC分类号： H01L33/60 , H01L33/36
CPC分类号： H01L33/24 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.
摘要翻译：一种制造发光器件的方法包括在衬底的第一侧上的第一表面中形成沟槽。沟槽包括不平行于第一表面的第一倾斜表面，其中基底具有与基底的第一表面相对的第二表面。该方法还包括在第一沟槽表面上形成发光层，但不在第一衬底表面的其余部分上形成发光层，以及从衬底的第二侧去除衬底的至少一部分以暴露发光层并允许以从基板的第二侧上的突起或突起发出光。这些突起可以是细长的金字塔。

9. 发明申请

US20110175055A1 SOLID STATE LIGHTING DEVICE ON A CONDUCTIVE SUBSTRATE 有权
标题翻译：导电基板上的固态照明装置
公开(公告)号：US20110175055A1
公开(公告)日：2011-07-21
申请号：US12691269
申请日：2010-01-21
申请人： Shaoher X. Pan
发明人： Shaoher X. Pan
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/0079 , H01L33/38 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device includes a conductive substrate having a first substrate surface and comprising a conductive material, a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface, and light emission layers disposed over the first protrusion surface. The light emission layers can emit light when an electric field is applied across the light emission layers.
摘要翻译：发光器件包括具有第一衬底表面并且包括导电材料的导电衬底，形成在导电衬底上的突起，其中突起部分地由不与第一衬底表面平行的第一突出表面限定，以及发光层设置在第一突起表面上。当跨越发光层施加电场时，发光层可以发光。

10. 发明授权

US07956370B2 Silicon based solid state lighting 有权
标题翻译：硅基固态照明
公开(公告)号：US07956370B2
公开(公告)日：2011-06-07
申请号：US11761446
申请日：2007-06-12
申请人： Shaoher X. Pan
发明人： Shaoher X. Pan
IPC分类号： H01L29/22 , H01L29/24
CPC分类号： H01L33/007 , B82Y20/00 , H01L33/12 , H01S5/34333 , H01S2301/173
摘要： A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.
摘要翻译：半导体器件包括：衬底，其包括具有[111]取向的第一表面和在衬底上具有第二取向的第二表面和多个III-V族氮化物层，其中所述多个III-V族氮化物层被配置为发射在多个III-V族氮化物层中的一个或多个中产生电流时发光。

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