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1. 发明授权

US06849151B2 Monitoring substrate processing by detecting reflectively diffracted light 失效
$Monitoring substrate processing by detecting reflectively diffracted light$
标题翻译：通过检测反射衍射光来监测基板处理
公开(公告)号：US06849151B2
公开(公告)日：2005-02-01
申请号：US10215065
申请日：2002-08-07
申请人： Michael S. Barnes , John P. Holland , David S. L. Mui , Wei Liu
发明人： Michael S. Barnes , John P. Holland , David S. L. Mui , Wei Liu
IPC分类号： C23C14/54 , C23C16/52 , G01N21/47 , G01N21/95 , G01N21/956 , H01J37/32 , H05H1/00 , C23C16/00 , H01L21/00
CPC分类号： H01J37/321 , C23C14/547 , C23C16/52 , G01N21/4788 , G01N21/9501 , G01N21/956 , H01J37/32935
摘要： A substrate is placed in a process zone and an energized process gas is maintained in the process zone to process the substrate. A light beam is reflectively diffracted from a pattern of features of the substrate being processed, the reflected beam is monitored, and a signal is generated in relation to the monitored beam. During processing, a width of the features of the substrate can change. The generated signal is evaluated to detect the occurrence of a change in the width of the features.
摘要翻译：将基底放置在处理区中，并且在处理区中保持通电的工艺气体以处理衬底。光束从被处理的衬底的特征的图案反射衍射，监测反射光束，并且相对于被监视的光束产生信号。在处理期间，衬底的特征的宽度可以改变。评估产生的信号以检测特征宽度变化的发生。

2. 发明授权

US06280563B1 Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma 失效
标题翻译：等离子体装置包括等离子体AC激发源和等离子体之间的动力非磁性金属部件
公开(公告)号：US06280563B1
公开(公告)日：2001-08-28
申请号：US09001512
申请日：1997-12-31
申请人： Scott K. Baldwin, Jr. , Michael S. Barnes , John P. Holland
发明人： Scott K. Baldwin, Jr. , Michael S. Barnes , John P. Holland
IPC分类号： C23F102
CPC分类号： H01J37/32477 , H01J37/32009 , H01J37/321 , H01J37/34
摘要： A plasma processor for a workpiece includes a coil for supplying an r.f. exciting field through a window to a plasma in a vacuum chamber. A powered non-magnetic metal member between the coil and plasma couples the field to the plasma. In first and second embodiments, the metal member is respectively (1) a plate abutting a face of the window inside the chamber and (2) a thin film on an interior face of the window. In a third embodiment, the plate and film are both used. All embodiments help to ignite the plasma. The second embodiment increases plasma stability and prevents window clouding by ionized plasma particles. Metal from the plate is sputtered as a deposit onto the workpiece. The third embodiment enables substantially simultaneous depositing and cleaning.
摘要翻译：一种用于工件的等离子体处理器包括用于供应r.f的线圈。激光场通过窗口到真空室中的等离子体。线圈和等离子体之间的动力非磁性金属构件将场耦合到等离子体。在第一和第二实施例中，金属构件分别为（1）邻接室内的窗的表面的板和（2）在窗的内表面上的薄膜。在第三实施例中，使用板和膜。所有实施例都有助于点燃等离子体。第二实施例增加等离子体稳定性并防止电离等离子体颗粒的窗玻璃化。从板上的金属溅镀成沉积物。第三实施例能够基本上同时进行存放和清洁。

3. 发明授权

US06962644B2 Tandem etch chamber plasma processing system 有权
标题翻译：串联腐蚀室等离子体处理系统
公开(公告)号：US06962644B2
公开(公告)日：2005-11-08
申请号：US10241653
申请日：2002-09-10
申请人： Alexander Paterson , Valentin N. Todorov , Jon McChesney , Gerhard M. Schneider , David Palagashvili , John P. Holland , Michael S. Barnes
发明人： Alexander Paterson , Valentin N. Todorov , Jon McChesney , Gerhard M. Schneider , David Palagashvili , John P. Holland , Michael S. Barnes
IPC分类号： H01L21/00 , C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32458
摘要： A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.
摘要翻译：一种用于处理晶片的方法和装置，包括限定多个隔离处理区域的腔室。隔离处理区域具有上端和下端。所述室还包括多个等离子体产生装置，每个等离子体产生装置邻近每个隔离处理区域的上端设置，并且连接到每个等离子体产生装置的多个电源中的一个。多个电源的输出频率是相位和/或频率锁定在一起的。另外，腔室包括多个气体分配组件。每个气体分配组件设置在每个隔离的处理区域内。可移动的晶片支撑件设置在每个隔离的处理区域内以支撑用于等离子体处理的晶片。可移动晶片支撑件包括耦合到偏置电源的偏置电极，偏置电源被配置为控制等离子体离子朝向可移动晶片支撑件的轰击。

4. 发明授权

US09165587B2 System and method for dual-sided sputter etch of substrates 有权
标题翻译：用于衬底双面溅射蚀刻的系统和方法
公开(公告)号：US09165587B2
公开(公告)日：2015-10-20
申请号：US12329457
申请日：2008-12-05
申请人： Michael S. Barnes , Terry Bluck
发明人： Michael S. Barnes , Terry Bluck
IPC分类号： C23F1/00 , H01L21/306 , C23C14/00 , C25B11/00 , C25B13/00 , G11B5/84 , G11B5/855 , H01J37/34
CPC分类号： G11B5/84 , G11B5/855 , H01J37/3438
摘要： A system is provided for etching patterned media disks. A movable electrode is utilized to perform sputter etch. The electrode moves to near or at slight contact to the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.
摘要翻译：提供用于蚀刻图案化介质盘的系统。利用可动电极进行溅射蚀刻。电极移动到接近或稍微接触到衬底，以将RF能量耦合到盘。待蚀刻的材料可以是金属，例如Co / Pt / Cr或类似的金属。衬底垂直地保持在载体中，并且两侧被连续蚀刻。也就是说，在一个室中蚀刻一面，然后在下一个室中蚀刻第二面。隔离阀设置在两个腔室之间，圆盘托架使腔室间移动。载体可以是线性驱动载体，使用例如磁化轮和线性马达。

5. 发明授权

US08715515B2 Process for optimization of island to trench ratio in patterned media 失效
标题翻译：在图案化介质中优化岛对沟比的方法
公开(公告)号：US08715515B2
公开(公告)日：2014-05-06
申请号：US12730147
申请日：2010-03-23
申请人： Houng T. Nguyen , Ren Xu , Michael S. Barnes
发明人： Houng T. Nguyen , Ren Xu , Michael S. Barnes
IPC分类号： B44C1/22
CPC分类号： G11B5/855
摘要： A sequence of process steps having balanced process times are implemented in sequence of etch chambers coupled linearly and isolated one from the other, resulting in the optimization of island to trench ratio for a patterned media. A biased chemical etching using active etching gas is used to descum and trim the resist patterns. An inert gas sputter etch is performed on the magnetic layers, resulting in the patterned magnetic layer on the disk. A final step of stripping is then performed to remove the residual capping resist and carbon hard mask on top of un-etched magnetic islands. The effective magnetic material remaining on the disk surface can be optimized by adjusting the conditions of chemical etch and sputter etch conditions. Relevant process conditions that may be adjusted include: pressure, bias, time, and the type of gas in each step.
摘要翻译：具有平衡处理时间的一系列工艺步骤以蚀刻室的顺序实现，该蚀刻室线性地并且彼此隔离，导致图案化介质的岛与沟槽比的优化。使用有源蚀刻气体的偏压化学蚀刻来除去和修整抗蚀剂图案。对磁性层进行惰性气体溅射蚀刻，得到盘上图案化的磁性层。然后进行剥离的最后一步，以除去未蚀刻的磁岛顶部上的残余覆盖抗蚀剂和碳硬掩模。可以通过调整化学蚀刻和溅射蚀刻条件的条件来优化残留在盘表面上的有效磁性材料。可能调整的相关工艺条件包括：压力，偏压，时间和每一步中的气体类型。

6. 发明授权

US08349196B2 System and method for commercial fabrication of patterned media 有权
标题翻译：用于商业制作图案化介质的系统和方法
公开(公告)号：US08349196B2
公开(公告)日：2013-01-08
申请号：US12329462
申请日：2008-12-05
申请人： Kevin P. Fairbairn , Michael S. Barnes , Terry Bluck , Ren Xu , Charles Liu , Ralph Kerns
发明人： Kevin P. Fairbairn , Michael S. Barnes , Terry Bluck , Ren Xu , Charles Liu , Ralph Kerns
IPC分类号： B44C1/22
CPC分类号： G11B5/84 , G11B5/855 , H01J37/3438
摘要： A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.
摘要翻译：提供了用于蚀刻用于硬盘驱动器的图案化介质盘的系统。模块化系统可以被定制以执行特定的处理顺序，使得图案化的介质盘被制造而不从真空环境中移除盘。在一些顺序中，磁性堆叠被蚀刻，而另一些蚀刻则在形成磁性堆叠之前进行。在另外的序列中，使用离子注入而没有蚀刻步骤。为了蚀刻可移动的非接触电极用于进行溅射蚀刻。阴极移动到与衬底接近但不接触的接近距离，以将RF能量耦合到盘。衬底垂直地保持在载体中，并且两侧被连续蚀刻。也就是说，在一个室中蚀刻一面，然后在下一个室中蚀刻第二面。

7. 发明申请

US20090159104A1 METHOD AND APPARATUS FOR CHAMBER CLEANING BY IN-SITU PLASMA EXCITATION 审中-公开
标题翻译：用于通过现场等离子体激发进行室清洁的方法和装置
公开(公告)号：US20090159104A1
公开(公告)日：2009-06-25
申请号：US11960442
申请日：2007-12-19
申请人： Judy Huang , Michael S. Barnes , Terry Bluck
发明人： Judy Huang , Michael S. Barnes , Terry Bluck
IPC分类号： B08B6/00 , B08B13/00
CPC分类号： C23C16/4405 , H01J37/32082 , H01J37/32192 , H01J37/32862
摘要： A substrate processing chamber for processing substrates such as semiconductor wafers, flat panel substrate, solar panels, etc., includes mechanism for in-situ plasma clean. The chamber body has at least one plasma source opening provided on its sidewall. A movable substrate holder is situated within the chamber body, the substrate holder assumes a first position wherein the substrate is positioned below the plasma source opening for in-situ plasma cleaning of the chamber, and a second position wherein the substrate is positioned above the plasma source opening for substrate processing. A plasma energy source is coupled to the plasma source opening.
摘要翻译：用于处理诸如半导体晶片，平板基板，太阳能电池板等基板的基板处理室包括用于原位等离子体清洗的机构。腔体具有设置在其侧壁上的至少一个等离子体源开口。可移动衬底保持器位于腔室主体内，衬底保持器采取第一位置，其中衬底位于等离子体源开口下方用于腔室的原位等离子体清洗，以及第二位置，其中衬底位于等离子体的上方源开口用于基板处理。等离子体能源耦合到等离子体源开口。

8. 发明申请

US20090151872A1 LOW COST HIGH CONDUCTANCE CHAMBER 审中-公开
标题翻译：低成本高性能室
公开(公告)号：US20090151872A1
公开(公告)日：2009-06-18
申请号：US11958235
申请日：2007-12-17
申请人： Tugrul Samir , Michael S. Barnes , Terry Bluck
发明人： Tugrul Samir , Michael S. Barnes , Terry Bluck
IPC分类号： H01B13/00 , B23P17/04 , C23C16/54
CPC分类号： H01L21/67017 , H01L21/6719 , Y10T29/49
摘要： A process chamber having high conductance and a method of manufacturing the process chamber are disclosed. The process chamber is machined from a single piece of aluminum where a process cavity and a pump cavity are created by intersecting cylinders. A substrate opening is also created at a bottom of the process cavity to provide conduit for services, such as cooling gas and electrical connections. A large undercut area is formed at a top of the pump cavity between the pump cavity and the process cavity. The undercut extends past the process chamber centerline at the process cavity. A circular saw is used to remove material and create a plenum which extends beyond the process cavity centerline.
摘要翻译：公开了具有高电导性的处理室和制造处理室的方法。处理室由单片铝加工，其中通过相交的圆柱体形成工艺腔和泵腔。在工艺空腔的底部还形成衬底开口，以提供诸如冷却气体和电气连接等服务的导管。在泵腔和处理腔之间的泵腔的顶部形成有大的底切区域。底切延伸经过过程腔中心线。使用圆锯去除材料并形成延伸超过工艺腔中心线的气室。

9. 发明申请

US20080066678A1 Apparatus and methods for transporting and processing substrates 有权
标题翻译：用于运输和处理基板的装置和方法
公开(公告)号：US20080066678A1
公开(公告)日：2008-03-20
申请号：US11523101
申请日：2006-09-19
申请人： Terry Bluck , Kevin P. Fairbairn , Michael S. Barnes , Christopher T. Lane
发明人： Terry Bluck , Kevin P. Fairbairn , Michael S. Barnes , Christopher T. Lane
IPC分类号： C23C16/00
CPC分类号： H01L21/67184 , H01L21/67173 , H01L21/67196 , H01L21/67201 , H01L21/67745
摘要： There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers and then out of the controlled atmosphere following processing in the processing chambers.
摘要翻译：描述了与目前使用的系统相比，用于运输和处理包括晶片的基板以便以合理的成本有效地生产提高的生产量的装置和方法。关键要素是沿着处理室的侧面使用传送室，用于通过装载锁定将基板输送到受控气氛中，然后沿着传送室作为到达处理室的方式，然后在受控气氛中进行处理处理室。

10. 发明授权

US6027603A Inductively coupled planar source for substantially uniform plasma flux 失效
标题翻译：用于基本上均匀的等离子体通量的电感耦合平面光源
公开(公告)号：US6027603A
公开(公告)日：2000-02-22
申请号：US980368
申请日：1997-11-28
申请人： John Patrick Holland , Michael S. Barnes
发明人： John Patrick Holland , Michael S. Barnes
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/321
摘要： A planar coil exciting a plasma of an r.f. vacuum plasma processor for a workpiece processed surface in a chamber includes plural turns. The coil, chamber and workpiece are arranged to produce in the chamber a magnetic flux having substantially greater density in peripheral portions of the coil and chamber than in a center portion of the chamber and coil so a substantially uniform plasma flux is incident on a processed surface of the workpiece.
摘要翻译：激励r.f.等离子体的平面线圈用于室内工件处理表面的真空等离子体处理器包括多匝。线圈，腔室和工件被布置成在腔室中产生在线圈和腔室的周边部分中具有比在腔室和线圈的中心部分中具有显着更大密度的磁通量，使得基本上均匀的等离子体通量入射到加工表面的工件。

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