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1. 发明授权

US06699399B1 Self-cleaning etch process 失效
标题翻译：自清洁蚀刻工艺
公开(公告)号：US06699399B1
公开(公告)日：2004-03-02
申请号：US09657793
申请日：2000-09-08
申请人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
发明人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
IPC分类号： C23F400
CPC分类号： H01L21/02071 , Y10S438/905
摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.
摘要翻译：用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除基本上所有由工艺气体沉积的蚀刻残留物。本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

2. 发明授权

US6136211A Self-cleaning etch process 失效
标题翻译：自清洁蚀刻工艺
公开(公告)号：US6136211A
公开(公告)日：2000-10-24
申请号：US969122
申请日：1997-11-12
申请人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
发明人： Xue-Yu Qian , Zhi-Wen Sun , Weinan Jiang , Arthur Y. Chen , Gerald Zheyao Yin , Ming-Hsun Yang , Ming-Hsun Kuo , David S. L. Mui , Jeffrey Chinn , Shaoher X. Pan , Xikun Wang
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/3213 , B08B9/00
CPC分类号： H01L21/02071 , Y10S438/905
摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.
摘要翻译：用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除基本上所有由工艺气体沉积的蚀刻残余物。本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

3. 发明授权

US06379575B1 Treatment of etching chambers using activated cleaning gas 失效
标题翻译：使用活性清洁气体处理蚀刻室
公开(公告)号：US06379575B1
公开(公告)日：2002-04-30
申请号：US08955181
申请日：1997-10-21
申请人： Gerald Zheyao Yin , Xue-Yu Qian , Patrick L. Leahey , Jonathan D. Mohn , Waiching Chow , Arthur Y. Chen , Zhi-Wen Sun , Brian K. Hatcher
发明人： Gerald Zheyao Yin , Xue-Yu Qian , Patrick L. Leahey , Jonathan D. Mohn , Waiching Chow , Arthur Y. Chen , Zhi-Wen Sun , Brian K. Hatcher
IPC分类号： H01L21302
CPC分类号： C04B41/009 , B08B7/0035 , C04B41/5346 , C04B41/91 , C23C16/4405 , H01J37/32862 , Y10S438/905 , C04B41/0027 , C04B41/0045 , C04B35/00
摘要： An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber 40 adjacent to the etching chamber 30, and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber 30 to clean the etch residue on the walls 45 and components of the etching chamber. The method is particularly useful for cleaning etch residue that is chemically adhered to ceramic surfaces in the chamber, for example surfaces comprising aluminum nitride, boron carbide, boron nitride, diamond, silicon oxide, silicon carbide, silicon nitride, titanium oxide, titanium carbide, yttrium oxide, zirconium oxide, or mixtures thereof.
摘要翻译：一种用于处理和调理蚀刻室30以及清洁壁45和蚀刻室30的部件上的薄的非均匀蚀刻残余物的方法20。在蚀刻步骤中，在蚀刻中蚀刻衬底25 室30，以在室中的壁和部件的表面上沉积薄的蚀刻残留层。在清洁步骤中，将清洁气体引入邻近蚀刻室30的远程室40中，并且在远程室内部施加微波或RF能量以形成活化的清洁气体。将高速流动的短时间的活性清洁气体引入蚀刻室30中以清洁壁45上的蚀刻残留物和蚀刻室的部件。该方法特别可用于清洁化学附着在室中的陶瓷表面的蚀刻残渣，例如包括氮化铝，碳化硼，氮化硼，金刚石，氧化硅，碳化硅，氮化硅，氧化钛，碳化钛，氧化钇，氧化锆或其混合物。

4. 发明授权

US5801386A Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same 失效
标题翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法
公开(公告)号：US5801386A
公开(公告)日：1998-09-01
申请号：US653212
申请日：1996-05-28
申请人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
发明人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
IPC分类号： H01J37/32 , H01J37/244
CPC分类号： H01J37/32935
摘要： Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.
摘要翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法。该装置包含第一绝缘体层，通过图案化和蚀刻铜层压体而形成一个或多个导电集电极焊盘。每个集电极焊盘连接到从每个集电极焊盘延伸到第一绝缘体层的边缘的导电引线（例如印刷电路迹线）。第二绝缘体层位于第一绝缘体层之上，使得集电极焊盘及其相应的引线夹在两个绝缘体层之间。使用粘合剂将第二绝缘体固定到第一绝缘体和集电板。集电极焊盘通过由第二绝缘体层限定的孔暴露于等离子体。

5. 发明授权

US06447636B1 Plasma reactor with dynamic RF inductive and capacitive coupling control 失效
标题翻译：具有动态RF感应和电容耦合控制的等离子体电抗器
公开(公告)号：US06447636B1
公开(公告)日：2002-09-10
申请号：US09505578
申请日：2000-02-16
申请人： Xue-Yu Qian , Zhi-Wen Sun , Maocheng Li , John Holland , Arthur H. Sato , Valentin N. Todorov , Patrick L. Leahey , Robert E. Ryan
发明人： Xue-Yu Qian , Zhi-Wen Sun , Maocheng Li , John Holland , Arthur H. Sato , Valentin N. Todorov , Patrick L. Leahey , Robert E. Ryan
IPC分类号： H05H100
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/3299 , H05H1/46
摘要： The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is disposed adjacent the chamber for inductively coupling RF energy into the chamber. An electrode is disposed adjacent the chamber and has a voltage for capacitively coupling energy into the chamber. The electrode is spaced from the substrate support and the RF coil. An electrode adjusting member is coupled with the electrode for dynamically adjusting the voltage in the electrode to vary the capacitive coupling for improved plasma ignition and plasma stability. A Faraday shield may be placed between the RF coil and the plasma process region in the chamber to suppress capacitive coupling of the RF coil. Sensors may be provided to monitor the amounts of inductive coupling and capacitive coupling to provide feedback to a controller which is used to adjust the inductive coupling and capacitive coupling in real time to stabilize the plasma and achieve improved processing.
摘要翻译：本发明提供了用于动态RF感应和电容耦合控制以改善等离子体基板处理以及实现污染和缺陷减少的系统和方法。等离子体反应器包括设置在室中的基板支撑件。射频线圈邻近该腔室设置，用于将射频能量感应耦合到腔室中。电极邻近该腔室设置并且具有用于将能量电容耦合到腔室中的电压。电极与衬底支架和RF线圈间隔开。电极调节构件与电极耦合以动态地调节电极中的电压，以改变电容耦合以改善等离子体点火和等离子体稳定性。法拉第屏蔽可以放置在RF线圈和腔室中的等离子体处理区域之间，以抑制RF线圈的电容耦合。可以提供传感器来监测电感耦合和电容耦合的量以向控制器提供反馈，该控制器用于实时调整电感耦合和电容耦合以稳定等离子体并实现改进的处理。

6. 发明授权

US06712927B1 Chamber having process monitoring window 失效
标题翻译：房间有过程监控窗口
公开(公告)号：US06712927B1
公开(公告)日：2004-03-30
申请号：US09610237
申请日：2000-07-05
申请人： Michael N. Grimbergen , Xue-Yu Qian
发明人： Michael N. Grimbergen , Xue-Yu Qian
IPC分类号： C23C1600
CPC分类号： H01J37/32458 , H01J37/321 , H01J37/32623
摘要： A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process chamber 35 has a wall which may comprise a window or radiation transmitting portion 130 that allows light to be transmitted therethrough. Residue deposits onto the window 130 during processing of the substrate 30 may be reduced. In one version, the window 130 comprises a transparent plate 135 covered by an overlying mask 140 that has at least one aperture 145 extending through the mask 140 so that light can be transmitted through the aperture 145 and the transparent plate 135.
摘要翻译：用于处理基板30并监测在基板30上进行的过程的处理室35包括支撑件45，气体分配器和排气85.处理室35具有壁，该壁可以包括窗口或辐射透射部分130 这允许光透射通过。可以减少在基板30的加工期间在窗口130上的残余沉积物。在一个版本中，窗口130包括被上覆掩模140覆盖的透明板135，其具有延伸穿过掩模140的至少一个孔145，使得光可以透过孔145和透明板135。

7. 发明授权

US06369349B2 Plasma reactor with coil antenna of interleaved conductors 有权
标题翻译：等离子电抗器与交错导线的线圈天线
公开(公告)号：US06369349B2
公开(公告)日：2002-04-09
申请号：US09742988
申请日：2000-12-20
申请人： Xue-Yu Qian , Arthur H. Sato
发明人： Xue-Yu Qian , Arthur H. Sato
IPC分类号： B23K1000
CPC分类号： H01J37/321 , H05H1/46
摘要： The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.
摘要翻译：本发明体现在用于将由RF源提供的RF功率辐射到真空室中的线圈天线，线圈天线包括多个螺旋导体，每个螺旋导体具有第一端和第二端，第一端适于连接到第一共同 RF电位，所述第二端适于连接到第二公共RF电位，所述多个导体中的每一个缠绕在共同的螺旋对称轴上，每个所述第二端基本上与所述轴线彼此间隔开。

8. 发明授权

US06291793B1 Inductively coupled plasma reactor with symmetrical parallel multiple coils having a common RF terminal 失效
公开(公告)号：US06291793B1
公开(公告)日：2001-09-18
申请号：US09389152
申请日：1999-09-02
申请人： Xue-Yu Qian , Arthur H. Sato
发明人： Xue-Yu Qian , Arthur H. Sato
IPC分类号： B23K1000
CPC分类号： H01J37/32082 , H01J37/321 , H05H1/46
摘要： The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet for supplying processing gases into the vacuum chamber, the coil antenna including plural concentric spiral conductive windings, each of the windings having an interior end near an apex of a spiral of the winding and an outer end at a periphery of the spiral of the winding, and a common terminal connected to the interior ends of the plural concentric spiral windings, the RF power source being connected across the terminal and the outer end of each one of the windings.

9. 发明授权

US06390019B1 Chamber having improved process monitoring window 失效
标题翻译：房间有改进的过程监控窗口
公开(公告)号：US06390019B1
公开(公告)日：2002-05-21
申请号：US09096728
申请日：1998-06-11
申请人： Michael N. Grimbergen , Xue-Yu Qian
发明人： Michael N. Grimbergen , Xue-Yu Qian
IPC分类号： C23C1600
CPC分类号： H01J37/32458 , H01J37/321 , H01J37/32623
摘要： A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process chamber 35 has a wall comprising a window 130 that allows light to be transmitted therethrough and reduces deposition of process residue from the process gas onto the window 130 during processing of the substrate 30. In one version, the window 130 comprises a transparent plate 135 covered by an overlying mask 140 that has at least one aperture 145 extending through the mask 140 so that light can be transmitted through the aperture 145 and the transparent plate 135.
摘要翻译：用于处理基板30并监测在基板30上进行的过程的处理室35包括支撑件45，气体分配器和排气85.处理室35具有包括允许光传输的窗口130的壁并且减少了处理残余物从工艺气体沉积到衬底30的处理过程中的窗口130.在一个版本中，窗口130包括被上覆掩模140覆盖的透明板135，该掩模140具有至少一个孔145，掩模140，使得光可以透过孔145和透明板135透射。

10. 发明授权

US5919382A Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor 失效
标题翻译：电感耦合等离子体反应器的RF电源的自动频率调谐
公开(公告)号：US5919382A
公开(公告)日：1999-07-06
申请号：US720588
申请日：1996-09-30
申请人： Xue-Yu Qian , Arthur Sato
发明人： Xue-Yu Qian , Arthur Sato
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , B23K10/00
CPC分类号： H01J37/321 , H01J37/32082
摘要： The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet for supplying processing gases into the vacuum chamber, the coil antenna including plural concentric spiral conductive windings, each of the windings having an interior end near an apex of a spiral of the winding and an outer end at a periphery of the spiral of the winding, and a common terminal connected to the interior ends of the plural concentric spiral windings, the RF power source being connected across the terminal and the outer end of each one of the windings. In embodiment, the inner ends of the concentric spiral windings are connected radially outwardly of a common conductor rather than inwardly to an apex terminal. In another embodiment, the concentric spiral windings are each powered at a point intermediate the radially inner and outer ends. In yet another embodiment, there are plural radially separate groups of concentric spiral windings, each connected to a separately controlled RF power source to enable adjustment of radial distribution of the plasma ion density. In a further embodiment, the spiral concentric windings are not conformal with the shape of the chamber ceiling, and can extend above the ceiling.
摘要翻译：本发明体现在用于将由RF源提供的RF功率辐射到电感耦合等离子体反应器的真空室中的线圈天线，所述电感耦合等离子体反应器处理真空室中的半导体晶片，所述反应器具有用于将处理气体供应到真空室，线圈天线包括多个同心的螺旋导电绕组，每个绕组具有靠近绕组螺旋的顶点的内端和绕组的螺旋周边的外端，以及连接到多个同心螺旋绕组的内端，RF电源跨越端子和每个绕组的外端连接。在实施例中，同心螺旋绕组的内端部连接到公共导体的径向外侧而不是向内连接到顶点端子。在另一个实施例中，同心螺旋绕组各自在径向内端和外端之间的点处供电。在另一个实施例中，存在多个径向分开的同心螺旋绕组组，每组连接到单独控制的RF功率源，以能够调整等离子体离子密度的径向分布。在另一个实施例中，螺旋同心绕组不与室顶的形状保持一致，并且可以在天花板上方延伸。

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