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1. 发明授权

US08617993B2 Method of reducing pattern collapse in high aspect ratio nanostructures 有权
标题翻译：降低高纵横比纳米结构中图案塌陷的方法
公开(公告)号：US08617993B2
公开(公告)日：2013-12-31
申请号：US12697862
申请日：2010-02-01
申请人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S. L. Mui , Katrina Mikhaylichenko
发明人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S. L. Mui , Katrina Mikhaylichenko
IPC分类号： H01L21/302 , H01L21/461 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02057
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在涉及半导体器件制造的一些严格处理过程中保护精细的纳米结构。处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。处理可以包括施加化学改变纳米结构表面的底漆，防止在随后的湿清洁过程中它们被损坏。然后可以进一步处理晶片，例如湿式清洁工艺，随后进行干燥处理。纳米结构的增加的疏水性有助于减少或防止纳米结构的崩溃。

2. 发明申请

US20110189858A1 METHOD FOR REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES 有权
标题翻译：在高比例纳米结构中减少图案褶皱的方法
公开(公告)号：US20110189858A1
公开(公告)日：2011-08-04
申请号：US12697862
申请日：2010-02-01
申请人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S.L. Mui , Katrina Mikhaylichenko
发明人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S.L. Mui , Katrina Mikhaylichenko
IPC分类号： H01L21/30
CPC分类号： H01L21/02057
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在涉及半导体器件制造的一些严格处理过程中保护精细的纳米结构。处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。处理可以包括施加化学改变纳米结构表面的底漆，防止在随后的湿清洁过程中它们被损坏。然后可以进一步处理晶片，例如湿式清洁工艺，随后进行干燥处理。纳米结构的增加的疏水性有助于减少或防止纳米结构的崩溃。

3. 发明授权

US08314055B2 Materials and systems for advanced substrate cleaning 有权
标题翻译：用于高级基材清洗的材料和系统
公开(公告)号：US08314055B2
公开(公告)日：2012-11-20
申请号：US12503486
申请日：2009-07-15
申请人： David S. L. Mui , Ji Zhu , Arjun Mendiratta
发明人： David S. L. Mui , Ji Zhu , Arjun Mendiratta
IPC分类号： C11D7/32
CPC分类号： B08B7/0014 , C11D3/3746 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/02071 , H01L21/6704 , H01L21/67051
摘要： The embodiments of the present invention provide improved materials, apparatus, and methods for cleaning wafer surfaces, especially surfaces of patterned wafers (or substrates). The cleaning materials, apparatus, and methods discussed have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning material includes polymers of one or more polymeric compounds. The cleaning materials can be used in a wide range of viscosity and pH to clean different types of surfaces. The cleaning materials are in liquid phase, and deform around device features to capture the contaminants on the substrate. The polymers entrap the contaminants preventing their return to the substrate surface. The cleaning apparatus is designed to dispense and rinse cleaning materials with a range of viscosities.
摘要翻译：本发明的实施例提供用于清洁晶片表面，特别是图案化晶片（或基板）的表面的改进的材料，装置和方法。所讨论的清洁材料，设备和方法具有在清洁具有精细特征的图案化基底而没有实质上损害特征的优点。清洁材料包括一种或多种聚合物的聚合物。清洁材料可以在宽范围的粘度和pH范围内使用以清洁不同类型的表面。清洁材料处于液相，并围绕设备特征变形以捕获衬底上的污染物。聚合物捕获污染物，防止其返回到基底表面。清洁设备设计成可以分配和冲洗具有一定粘度范围的清洁材料。

4. 发明授权

US08211846B2 Materials for particle removal by single-phase and two-phase media 有权
标题翻译：用于通过单相和两相介质去除颗粒的材料
公开(公告)号：US08211846B2
公开(公告)日：2012-07-03
申请号：US12131654
申请日：2008-06-02
申请人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： C11D1/00 , C11D3/26 , C11D3/37
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供用于清洁具有精细特征的图案化衬底的改进材料。清洁材料在清洁具有精细特征的图案化基材上具有优点，而基本上不损坏特征。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

5. 发明申请

US20090151757A1 APPARATUS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA 有权
标题翻译：用于单相和两相介质去除颗粒的装置
公开(公告)号：US20090151757A1
公开(公告)日：2009-06-18
申请号：US12131667
申请日：2008-06-02
申请人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： B08B3/04 , C11D17/00
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供了用清洁材料清洁具有精细特征的图案化衬底的设备。使用清洁材料的设备具有清洁具有精细特征的图案化基材而不会显着损害特征的优点。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

6. 发明授权

US08226775B2 Methods for particle removal by single-phase and two-phase media 有权
标题翻译：通过单相和两相介质去除颗粒的方法
公开(公告)号：US08226775B2
公开(公告)日：2012-07-24
申请号：US12131660
申请日：2008-06-02
申请人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： B08B3/00 , B08B1/00 , B08B1/02 , C23G1/36
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide methods for cleaning patterned substrates with fine features. The methods for cleaning patterned substrate have advantages in cleaning patterned substrates with fine features without substantially damaging the features by using the cleaning materials described. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供了用于清洁具有精细特征的图案化衬底的方法。用于清洁图案化衬底的方法具有通过使用所述清洁材料来清洁具有精细特征的图案化衬底而不会基本上损坏特征的优点。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

7. 发明授权

US08084406B2 Apparatus for particle removal by single-phase and two-phase media 有权
标题翻译：用于通过单相和两相介质去除颗粒的装置
公开(公告)号：US08084406B2
公开(公告)日：2011-12-27
申请号：US12131667
申请日：2008-06-02
申请人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： C11D17/00
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供了用清洁材料清洁具有精细特征的图案化衬底的设备。使用清洁材料的设备具有清洁具有精细特征的图案化基材而不会显着损害特征的优点。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

8. 发明申请

US20100016202A1 MATERIALS AND SYSTEMS FOR ADVANCED SUBSTRATE CLEANING 有权
标题翻译：高级基板清洗的材料和系统
公开(公告)号：US20100016202A1
公开(公告)日：2010-01-21
申请号：US12503486
申请日：2009-07-15
申请人： David S. L. Mui , Ji Zhu , Arjun Mendiratta
发明人： David S. L. Mui , Ji Zhu , Arjun Mendiratta
IPC分类号： C11D1/66 , C11D1/76
CPC分类号： B08B7/0014 , C11D3/3746 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/02071 , H01L21/6704 , H01L21/67051
摘要： The embodiments of the present invention provide improved materials, apparatus, and methods for cleaning wafer surfaces, especially surfaces of patterned wafers (or substrates). The cleaning materials, apparatus, and methods discussed have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning material includes polymers of one or more polymeric compounds. The cleaning materials can be used in a wide range of viscosity and pH to clean different types of surfaces. The cleaning materials are in liquid phase, and deform around device features to capture the contaminants on the substrate. The polymers entrap the contaminants preventing their return to the substrate surface. The cleaning apparatus is designed to dispense and rinse cleaning materials with a range of viscosities.
摘要翻译：本发明的实施例提供用于清洁晶片表面，特别是图案化晶片（或基板）的表面的改进的材料，装置和方法。所讨论的清洁材料，设备和方法具有在清洁具有精细特征的图案化基底而没有实质上损害特征的优点。清洁材料包括一种或多种聚合物的聚合物。清洁材料可以在宽范围的粘度和pH范围内使用以清洁不同类型的表面。清洁材料处于液相，并围绕设备特征变形以捕获衬底上的污染物。聚合物捕获污染物，防止其返回到基底表面。清洁设备设计成可以分配和冲洗具有一定粘度范围的清洁材料。

9. 发明申请

US20090211596A1 Method of post etch polymer residue removal 审中-公开
标题翻译：后蚀刻聚合物残渣去除方法
公开(公告)号：US20090211596A1
公开(公告)日：2009-08-27
申请号：US11827479
申请日：2007-07-11
申请人： Seokmin Yun , Mark Wilcoxson , Ji Zhu , Kevin Chuang , Hsiao Wei Chang , David Lou
发明人： Seokmin Yun , Mark Wilcoxson , Ji Zhu , Kevin Chuang , Hsiao Wei Chang , David Lou
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： H01L21/02063 , H01L21/6708
摘要： A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.
摘要翻译：用于从衬底的表面去除蚀刻后聚合物残余物的系统和方法包括鉴定用于从衬底的表面去除蚀刻后聚合物残余物的干闪光化学物质。干闪光化学物质被配置为通过在通过低k电介质膜层形成特征的区域中的蚀刻操作来选择性去除留下的后蚀刻聚合物残余物。使用短闪光处理来施加所识别的干闪光化学物质，以除去至少一部分后蚀刻聚合物残余物，同时最小化对电介质膜层的损伤。然后将湿清洗化学品施加到基底的表面。湿式清洁化学品的应用有助于基本上去除短时间闪蒸过程留下的剩余后蚀刻聚合物残留物。

10. 发明申请

US20120115332A1 Method of Post Etch Polymer Residue Removal 审中-公开
标题翻译：后蚀刻聚合物残渣去除方法
公开(公告)号：US20120115332A1
公开(公告)日：2012-05-10
申请号：US13354322
申请日：2012-01-19
申请人： Seokmin Yun , Mark Wilcoxson , Ji Zhu , Kevin Chuang , Hsiao Wei Chang , David Lou
发明人： Seokmin Yun , Mark Wilcoxson , Ji Zhu , Kevin Chuang , Hsiao Wei Chang , David Lou
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01L21/6708
摘要： A method for processing a substrate includes etching a surface of the substrate using an etching chemistry in a plasma chamber, the etching configured to define one or more features on the surface of the substrate. The features have some etch polymer residues as a result of the etching. The etching is terminated. A dry flash chemistry is applied into the plasma chamber. The plasma chamber is powered for a period of time between about 5 seconds and about 10 seconds to perform a dry flash etch. During the dry flash etch, the chamber is set to a low pressure of between about 5 mTorr and about 40 mTorr. The dry flash etch acts to weaken adhesion of the etch polymer residues to the features. The substrate is moved from plasma chamber and into a wet clean chamber for cleaning which removes the etch polymer residues during fluid cleaning.
摘要翻译：一种用于处理衬底的方法包括：在等离子体室中使用蚀刻化学法蚀刻衬底的表面，蚀刻被配置为在衬底的表面上限定一个或多个特征。这些特征由于蚀刻而具有一些蚀刻聚合物残留物。蚀刻终止。将干闪光化学物质施加到等离子体室中。等离子体室在约5秒至约10秒之间的时间内供电以进行干闪光蚀刻。在干闪光蚀刻期间，室设定在约5mTorr至约40mTorr之间的低压。干闪光蚀刻用于削弱蚀刻聚合物残留物对特征的粘附。衬底从等离子体室移动到用于清洁的湿式清洁室中，其在流体清洁期间除去蚀刻聚合物残余物。

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