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    • 1. 发明授权
    • Method for producing hydrogen gas utilizing mechano-corrosive reaction
    • 利用机械腐蚀反应生产氢气的方法
    • US07008609B2
    • 2006-03-07
    • US10658106
    • 2003-09-09
    • Masao WatanabeYoko Watanabe
    • Masao WatanabeYoko Watanabe
    • C01B3/08C01F7/42
    • B01J7/02B01J19/18B01J2219/182C01B3/08Y02E60/36
    • There is provided a method of producing hydrogen gas serving as fuel for a portable fuel cell, whereby hydrogen gas can be provided easily, safely, and at a low cost. To that end, the method of producing hydrogen gas comprises the steps of causing friction and mechanical fracture accompanying the friction to occur to a metallic material under water and increasing thereby chemical reactivity of atoms of the metallic material, in close proximity of the surface thereof; wherein water molecules are decomposed by accelerating corrosion reaction of water with the metallic material. Further, for the metallic material, an aluminum or aluminum alloy material is used as industrial waste including refuse and cutting chips (curls) of an industrial aluminum material. Meanwhile, pure water not substantially containing ionic impurities and organic molecules is used for the water.
    • 提供了一种生产用作便携式燃料电池的燃料的氢气的方法,由此可以容易地,安全地和低成本地提供氢气。 为此,制造氢气的方法包括以下步骤:伴随摩擦的摩擦和机械断裂发生在水下的金属材料上,从而增加金属材料的原子在其表面附近的化学反应性; 其中水分子通过加速水与金属材料的腐蚀反应而分解。 此外,对于金属材料,使用铝或铝合金材料作为工业废物,包括工业铝材料的垃圾和切割屑(卷曲)。 同时,水中不含有离子杂质和有机分子的纯水。
    • 2. 发明授权
    • Antireflection film and exposure method
    • 防反射膜和曝光方法
    • US07655377B2
    • 2010-02-02
    • US11361750
    • 2006-02-23
    • Nobuyuki MatsuzawaYoko WatanabeBoontarika ThunnakartKen OzawaYuko Yamaguchi
    • Nobuyuki MatsuzawaYoko WatanabeBoontarika ThunnakartKen OzawaYuko Yamaguchi
    • G03F7/20G03F7/11G03C1/825
    • G03F7/091G03F7/70341
    • An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
    • 一种防反射膜,其中即使在曝光光在液浸光刻技术中倾斜入射时,也可以在抗蚀剂层和硅衬底之间的界面处实现充分降低的反射率。 通过具有190〜195nm的波长和1.0以下的数值孔径的曝光系统,在抗蚀剂层和硅基板之间形成双层抗反射膜。 复数折射率N1和N2以及防反射膜的上层和下层的膜厚分别由n1-k1i,n2-k2i和d1,d2表示,并且[n10,k10,d10,..., n2,k20,d20],n1,k1,d1,n2,k2,d2满足{(n1-n10)/(n1m-n10)} 2 + {(k1-k10)/(k1m-k10)} 2 + {(d1-d10)/(d1m-d10)} 2 + {(n2-n20)/(n2m-n20)} 2 + {(k2-k20)/(k2m-k20) d20)/(d2m-d20)} 2 <= 1。
    • 3. 发明授权
    • Output method and apparatus
    • 输出方法和装置
    • US5852709A
    • 1998-12-22
    • US895551
    • 1997-07-16
    • Yoko Watanabe
    • Yoko Watanabe
    • B41J2/05B41J29/38G06K15/00G06F15/00
    • G06K15/00G06K2215/0011
    • An output method and apparatus are provided for judging whether received data includes image data, a mixture of image data and text data, or text data alone. The output apparatus is controlled to output data in a resolution of the image data if the received data is judged to include image data or a mixture of image and text data. Also disclosed is setting a resolution of the output apparatus to a high value if the received data is judged to include text data. A storage medium for storing a program for performing these operations is also described.
    • 提供一种输出方法和装置,用于判断所接收的数据是否包括图像数据,图像数据和文本数据的混合,或单独的文本数据。 如果接收到的数据被判断为包括图像数据或图像和文本数据的混合,则控制输出装置以图像数据的分辨率输出数据。 还公开了如果接收到的数据被判断为包括文本数据,则将输出装置的分辨率设置为高值。 还描述了用于存储用于执行这些操作的程序的存储介质。
    • 4. 发明授权
    • Organic electroluminescent device with low barrier height
    • 低阻挡高度的有机电致发光器件
    • US5343050A
    • 1994-08-30
    • US884
    • 1993-01-05
    • Syun EgusaYoko Watanabe
    • Syun EgusaYoko Watanabe
    • H01L51/00H01L51/30H01L51/50H05B33/14H05B33/26H01L29/28H01L33/00
    • H05B33/26H01L51/005H01L51/0053H01L51/0059H01L51/0062H01L51/007H01L51/0071H01L51/50H05B33/14
    • There is disclosed an organic electroluminescent device, comprising a multilayered structure of an organic film for electron injection, and an organic film for hole injection, at least one of which consists of a plurality of layers, and an organic film serving as a light-emitting layer interposed therebetween, a first electrode for electron injection formed on the side of the organic film for electron injection of the multilayered structure, and a second electrode for hole injection formed on the side of the organic film for hole injection of the multilayered structure, wherein a barrier height against electron injection at each interface between layers present from the first electrode to the organic film serving as the light-emitting layer is not more than 0.6 eV, and a barrier height against hole injection at each interface between layers present from the second electrode to the organic film serving as the light-emitting layer is not more than 0.6 eV.
    • 公开了一种有机电致发光器件,其包括用于电子注入的有机膜的多层结构和用于空穴注入的有机膜,其中至少一个由多层构成,有机膜用作发光 插入其间的第一电极,形成在用于电子注入多层结构的有机膜侧的电子注入用第一电极和形成在多层结构的空穴注入用有机膜侧的空穴注入用第二电极,其中, 在从第一电极到用作发光层的有机膜之间存在的层之间的每个界面处的电子注入的势垒高度不大于0.6eV,并且在从第二电极存在的层之间的每个界面处的空穴注入的势垒高度 作为发光层的有机膜的电极为0.6eV以下。