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1. 发明申请

US20060194125A1 Antireflection film and exposure method 失效
公开(公告)号：US20060194125A1
公开(公告)日：2006-08-31
申请号：US11361750
申请日：2006-02-23
申请人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa , Yuko Yamaguchi
发明人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa , Yuko Yamaguchi
IPC分类号： G03C5/00 , G21K5/00 , G03F1/00
CPC分类号： G03F7/091 , G03F7/70341
摘要： An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.

2. 发明申请

US20070097514A1 ANTIREFLECTIVE FILM AND EXPOSURE METHOD 失效
公开(公告)号：US20070097514A1
公开(公告)日：2007-05-03
申请号：US11467983
申请日：2006-08-29
申请人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa
发明人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa
IPC分类号： G02B21/02
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/2041 , Y10S438/952
摘要： An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1−k1i) and N2 (=n2−k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression {(n1−n10)/(n1m−n10)}2+{(k1−k10)/(k1m−k10)}2+{(d1− d10)/(d1m−d10)}2+{(n2−n20)/(n2m−n20)}2+{(k2−k20)/(k2m− k20)}2+{(d2−d20)/(d2m−d20)}2≦1.

3. 发明授权

US07582411B2 Antireflective film and exposure method 失效
标题翻译：防反射膜和曝光方法
公开(公告)号：US07582411B2
公开(公告)日：2009-09-01
申请号：US11467983
申请日：2006-08-29
申请人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa
发明人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa
IPC分类号： H01L21/027 , G03F7/20 , G03F7/11
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/2041 , Y10S438/952
摘要： An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1−k1i) and N2 (=n2−k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression {(n1−n10)/(n1m−n10)}2+{(k1−k10)/(k1m−k10)}2+{(d1−d10)/(d1m−d10)}2+{(n2−n20)/(n2m−n20)}2+{(k2−k20)/(k2m−k20)}2+{(d2−d20)/(d2m−d20)}2≦1.
摘要翻译：在抗蚀剂层和形成在硅衬底的表面上的氧化硅层之间设置防反射膜，用于在波长为190nm至195nm的曝光系统中曝光抗蚀剂层，并将数值孔径NA为0.93至 1.2。假设构成防反射膜的上层和下层的复折射率分别为N1（= n1-k1i）和N2（= n2-k2i），并且两层的厚度分别为d1和d2，选择[n10，k10，d10，n20，k20，d20]的值，n1，k1，d1，n2，k2和d2满足关系式<？in-line-formula description =“In-line Formulas”end =“lead”→> {（n1-n10）/（n1m-n10）} 2 + {（k1-k10）/（k1m-k10）} 2 + {（d1-d10）/（d1m-d10）} 2 + {（n2-n20）/（n2m-n20）} 2 + {（k2-k20）/（k2m-k20）} 2 + {（d2-d20）/（d2m-d20）} 2 < ？in-line-formula description =“In-line Formulas”end =“tail”？>

4. 发明授权

US07655377B2 Antireflection film and exposure method 失效
标题翻译：防反射膜和曝光方法
公开(公告)号：US07655377B2
公开(公告)日：2010-02-02
申请号：US11361750
申请日：2006-02-23
申请人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa , Yuko Yamaguchi
发明人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa , Yuko Yamaguchi
IPC分类号： G03F7/20 , G03F7/11 , G03C1/825
CPC分类号： G03F7/091 , G03F7/70341
摘要： An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
摘要翻译：一种防反射膜，其中即使在曝光光在液浸光刻技术中倾斜入射时，也可以在抗蚀剂层和硅衬底之间的界面处实现充分降低的反射率。通过具有190〜195nm的波长和1.0以下的数值孔径的曝光系统，在抗蚀剂层和硅基板之间形成双层抗反射膜。复数折射率N1和N2以及防反射膜的上层和下层的膜厚分别由n1-k1i，n2-k2i和d1，d2表示，并且[n10，k10，d10，...， n2，k20，d20]，n1，k1，d1，n2，k2，d2满足{（n1-n10）/（n1m-n10）} 2 + {（k1-k10）/（k1m-k10）} 2 + {（d1-d10）/（d1m-d10）} 2 + {（n2-n20）/（n2m-n20）} 2 + {（k2-k20）/（k2m-k20） d20）/（d2m-d20）} 2 <= 1。

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