专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070159572A1 Element for modulating area 失效
标题翻译：用于调制区域的元件
公开(公告)号：US20070159572A1
公开(公告)日：2007-07-12
申请号：US10598774
申请日：2005-03-08
申请人： Eriko Matsui , Haruo Watanabe , Nobuyuki Matsuzawa , Akio Yasuda , Tadashi Mizutani , Takae Yamauchi , Susumu Kitagawa
发明人： Eriko Matsui , Haruo Watanabe , Nobuyuki Matsuzawa , Akio Yasuda , Tadashi Mizutani , Takae Yamauchi , Susumu Kitagawa
IPC分类号： G02F1/1333
CPC分类号： G02F1/01 , C09K19/40
摘要： The present invention is directed to an element for modulating area, in which there is used a functional molecular element adapted to change, by application of electric field, conformation of disc-shape like organic metallic complex molecule to exhibit function so that the structure of the organic metallic complex molecule is changed by application of electric field and the occupation area thereof is thus changed. The area modulating element is adapted to variously change molecular structure in accordance with control of applied electric field to change occupation area of molecule to thereby constitute a functional device such as optical filter and/or optical screen, etc.
摘要翻译：本发明涉及一种用于调制区域的元件，其中使用适于通过施加电场来改变圆盘形状的有机金属络合物分子的构象以展现功能的功能性分子元件，以使得其结构有机金属络合物分子通过施加电场而改变，因此其占用面积发生变化。面积调制元件适于根据施加的电场的控制来不同地改变分子结构，以改变分子的占有面积，从而构成诸如光学滤波器和/或光学屏幕等功能器件。

2. 发明授权

US06677108B2 Method for light exposure 失效
标题翻译：曝光方法
公开(公告)号：US06677108B2
公开(公告)日：2004-01-13
申请号：US09907345
申请日：2001-07-17
申请人： Nobuyuki Matsuzawa , Shigeo Irie
发明人： Nobuyuki Matsuzawa , Shigeo Irie
IPC分类号： G03C556
CPC分类号： G03F7/2039 , G03F7/2004 , Y10S430/167 , Y10S430/168
摘要： A light exposure method in which, when a resist layer is selectively exposed to one of X-rays containing soft X-rays, vacuum ultraviolet light rays and ultraviolet rays containing extreme ultraviolet light rays for patterning the resist layer to a pre-set shape, a high molecular material having pre-set oxygen content ratio (no) and density (&rgr;) is applied to form a resist layer having a film thickness not less than 250 nm. Since the high molecular material having the pre-set oxygen content ratio (no) and density (&rgr;) is used, a resist pattern of a better shape may be obtained even if the resist layer is of an increased thickness of not less than 250 nm. Since the film thickness of the resist layer is not less than 250 nm, it is possible to construct a lithographic process superior in etching resistance to realize ultra-fine machining than was heretofore possible.
摘要翻译：一种曝光方法，其中当将抗蚀剂层选择性地暴露于含有软X射线的X射线之一，真空紫外光线和包含用于将抗蚀剂层图案化为预定形状的极紫外光的紫外线时，施加具有预设氧含量比（No）和密度（rho））的高分子材料以形成膜厚度不小于250nm的抗蚀剂层。由于使用具有预设氧含量比（no）和密度（rho）的高分子材料，因此即使抗蚀剂层的厚度增加到不小于250nm，也可以获得更好形状的抗蚀剂图案。由于抗蚀剂层的膜厚度不小于250nm，因此可以构造抗蚀性优异的平版印刷工艺，以实现超细加工。

3. 发明授权

US07902535B2 Functional molecular element 有权
标题翻译：功能分子元素
公开(公告)号：US07902535B2
公开(公告)日：2011-03-08
申请号：US10597845
申请日：2005-02-02
申请人： Eriko Matsui , Haruo Watanabe , Oliver Harnack , Nobuyuki Matsuzawa , Akio Yasuda , Tadashi Mizutani , Takae Yamauchi , Susumu Kitagawa
发明人： Eriko Matsui , Haruo Watanabe , Oliver Harnack , Nobuyuki Matsuzawa , Akio Yasuda , Tadashi Mizutani , Takae Yamauchi , Susumu Kitagawa
IPC分类号： H01L47/00
CPC分类号： H01L51/0595 , B82Y10/00 , G02F1/061 , G02F1/167 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C2013/009 , G11C2213/14 , G11C2213/77 , H01L51/0076 , H01L51/0077 , H01L51/0508 , H01L51/0554 , H01L51/0591 , H01L51/428 , Y02E10/549
摘要： A functional molecular element is provided. The functional molecular element is adapted to change, by application of electric field, conformation of a disc shape like organic metallic complex molecule (1) which forms a columnar arrangement structure to exhibit function, wherein the structure of the organic metallic complex molecule is changed by application of electric field so that anisotropy of dielectric constant is changed. Accordingly, conductivity between measurement electrodes can be switched. As its stable value, there are three kinds of stable values or more. Thus, elements or devices to which such multi-value memory characteristic is applied can be constituted.
摘要翻译：提供功能性分子元件。功能分子元件适于通过施加电场来改变像圆形形状的有机金属络合物分子（1）的构型，其形成柱状排列结构以显示功能，其中有机金属络合物分子的结构由施加电场使介电常数各向异性发生变化。因此，可以切换测量电极之间的电导率。作为其稳定值，有三种稳定值或更多。因此，可以构成应用这种多值存储特性的元件或装置。

4. 发明授权

US07679080B2 Functional molecular device 失效
标题翻译：功能分子装置
公开(公告)号：US07679080B2
公开(公告)日：2010-03-16
申请号：US11571135
申请日：2005-06-23
申请人： Eriko Matsui , Nobuyuki Matsuzawa , Akio Yasuda , Oliver Harnack
发明人： Eriko Matsui , Nobuyuki Matsuzawa , Akio Yasuda , Oliver Harnack
IPC分类号： H01L51/30
CPC分类号： B82Y30/00 , B82Y10/00 , H01L27/283 , H01L51/005 , H01L51/0067 , H01L51/0512 , H01L51/0583 , H01L51/0595 , Y10S977/731 , Y10S977/791 , Y10S977/94 , Y10S977/943
摘要： A functional molecular device displaying its functions under the action of an electrical field is provided. A Louis base molecule, exhibiting positive dielectric constant anisotropy or exhibiting dipole moment along the long-axis direction of the Louis base molecule, is arrayed in the form of a pendant on an electrically conductive linear or film-shaped principal-axis molecule of a conjugated system, via a metal ion capable of acting as a Louis acid. The resulting structure is changed in conformation on application of an electrical field to exhibit its function. The electrically conductive linear or film-shaped principal-axis molecule and the Louis base molecule form a complex with the metal ion. On application of the electrical field, the Louis base molecule performs a swinging movement or a seesaw movement to switch the electrical conductivity of the principal-axis molecule. This molecule exhibits electrical characteristics which may be reversed depending on whether or not the molecule has been subjected to electrical field processing. A molecular device having a function equivalent to one of CMOS may be produced from one and the same material.
摘要翻译：提供了在电场作用下显示其功能的功能分子装置。在路易斯碱分子的长轴方向显示出正介电常数各向异性或显示偶极矩的路易斯碱基分子以共轭的导电线性或膜状主轴分子的侧基的形式排列系统，通过能够作为路易斯酸的金属离子。所产生的结构在施加电场以表现其功能的结构上改变。导电线性或膜状主轴分子和路易斯碱分子与金属离子形成络合物。在施加电场时，路易斯碱分子进行摆动运动或跷跷板运动以切换主轴分子的导电性。该分子表现出电特性，其可以根据分子是否经受电场加工而反转。具有与CMOS之一相当的功能的分子器件可以由同一材料制造。

5. 发明授权

US07582411B2 Antireflective film and exposure method 失效
标题翻译：防反射膜和曝光方法
公开(公告)号：US07582411B2
公开(公告)日：2009-09-01
申请号：US11467983
申请日：2006-08-29
申请人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa
发明人： Nobuyuki Matsuzawa , Yoko Watanabe , Boontarika Thunnakart , Ken Ozawa
IPC分类号： H01L21/027 , G03F7/20 , G03F7/11
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/2041 , Y10S438/952
摘要： An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1−k1i) and N2 (=n2−k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression {(n1−n10)/(n1m−n10)}2+{(k1−k10)/(k1m−k10)}2+{(d1−d10)/(d1m−d10)}2+{(n2−n20)/(n2m−n20)}2+{(k2−k20)/(k2m−k20)}2+{(d2−d20)/(d2m−d20)}2≦1.
摘要翻译：在抗蚀剂层和形成在硅衬底的表面上的氧化硅层之间设置防反射膜，用于在波长为190nm至195nm的曝光系统中曝光抗蚀剂层，并将数值孔径NA为0.93至 1.2。假设构成防反射膜的上层和下层的复折射率分别为N1（= n1-k1i）和N2（= n2-k2i），并且两层的厚度分别为d1和d2，选择[n10，k10，d10，n20，k20，d20]的值，n1，k1，d1，n2，k2和d2满足关系式<？in-line-formula description =“In-line Formulas”end =“lead”→> {（n1-n10）/（n1m-n10）} 2 + {（k1-k10）/（k1m-k10）} 2 + {（d1-d10）/（d1m-d10）} 2 + {（n2-n20）/（n2m-n20）} 2 + {（k2-k20）/（k2m-k20）} 2 + {（d2-d20）/（d2m-d20）} 2 < ？in-line-formula description =“In-line Formulas”end =“tail”？>

6. 发明授权

US06927010B2 Resist material and exposure method 失效
标题翻译：抵抗材料和曝光方法
公开(公告)号：US06927010B2
公开(公告)日：2005-08-09
申请号：US10317700
申请日：2002-12-12
申请人： Nobuyuki Matsuzawa
发明人： Nobuyuki Matsuzawa
IPC分类号： G03F7/032 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/20 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0397 , Y10S430/108
摘要： The present invention employs a polymer material exhibiting a low absorbance in the wavelength range of a vacuum ultraviolet (VUV) light to allow the improved ultra-fine process to be realized. In an exposure method for selectively exposing a resist layer to an ultraviolet light to pattern the resist layer into a predetermined shape, a polymer material, to which a cyclopentane group is introduced, is used as a polymer material constituting the resist layer, wherein at least one hydrogen atom of the introduced cyclopentane group is substituted by at least one selected from the group consisting of a fluorine atom, a trifluoromethyl group and a difluoromethylene group.
摘要翻译：本发明采用在真空紫外（VUV）光的波长范围内表现出低吸光度的聚合物材料，以实现改进的超细工艺。在将抗蚀剂层选择性地暴露于紫外线以将抗蚀剂层图案化成预定形状的曝光方法中，使用引入环戊烷基的聚合物材料作为构成抗蚀剂层的聚合物材料，其中至少引入的环戊烷基中的一个氢原子被选自氟原子，三氟甲基和二氟亚甲基中的至少一个取代。

7. 发明授权

US06551764B2 Exposure method 失效
公开(公告)号：US06551764B2
公开(公告)日：2003-04-22
申请号：US09907372
申请日：2001-07-17
申请人： Nobuyuki Matsuzawa
发明人： Nobuyuki Matsuzawa
IPC分类号： G03C500
CPC分类号： G03F7/2004 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108
摘要： When selectively exposing a resist layer with vacuum ultraviolet rays for patterning into a predetermined shape, the present invention utilizes a polymer material constituting the resist layer and having at least one alicycle which is a saturated n-member ring (n is a number of carbon atoms constituting the ring and is an even number) and a fluorine substitution group in at least two carbon atoms constituting the alicycle and arranged alternately. Thus, by improving the light transmission ratio of the resist layer in the vacuum ultraviolet ray wavelength region, it becomes possible to perform a super-fine processing which cannot be obtained in the conventional method.

8. 发明授权

US5340631A Clathrate inclusion compounds and optical recording medium using the same 失效
标题翻译：包合物和使用其的光记录介质
公开(公告)号：US5340631A
公开(公告)日：1994-08-23
申请号：US159034
申请日：1993-11-29
申请人： Nobuyuki Matsuzawa , Yoko Hayashi , Masafumi Ata , Shin-Ichiro Tamura
发明人： Nobuyuki Matsuzawa , Yoko Hayashi , Masafumi Ata , Shin-Ichiro Tamura
IPC分类号： B41M5/26 , G11B7/24 , G11B7/244 , G11B7/247 , B32B3/02
CPC分类号： G11B7/244 , G11B7/247 , Y10S428/913 , Y10S430/146
摘要： A clathrate inclusion compound consisting essentially of a cyanine dye and organic host molecules including the cyanine dye therein is described. By the inclusion, the degradation of the cyanine dye by the attack of oxygen is avoided with respect to the absorbance, reflectance and the like characteristics. Optical recording media using the inclusion compound are also described.
摘要翻译：描述了基本上由花青染料和包括其中的花青染料的有机主体分子组成的包合物包合物。通过包含，相对于吸光度，反射率等特性，避免了由于氧的侵蚀引起的花青染料的降解。还描述了使用包合物的光学记录介质。

9. 发明授权

US08765353B2 Resist composition and method for producing semiconductor device 有权
标题翻译：抗蚀剂组合物和半导体器件的制造方法
公开(公告)号：US08765353B2
公开(公告)日：2014-07-01
申请号：US13238004
申请日：2011-09-21
申请人： Koji Arimitsu , Nobuyuki Matsuzawa , Isao Mita
发明人： Koji Arimitsu , Nobuyuki Matsuzawa , Isao Mita
IPC分类号： G03F7/004 , G03F7/038 , G03F7/40
CPC分类号： G03F7/40 , G03F7/30 , H01L21/0273
摘要： A resist composition includes: a crosslinking material that is crosslinked in the presence of an acid; an acid amplifier; and a solvent.
摘要翻译：抗蚀剂组合物包括：在酸存在下交联的交联材料; 酸放大器; 和溶剂。

10. 发明授权

US08697342B2 Method of modifying chemically amplified resist pattern, modifier for chemically amplified resist pattern, and resist pattern structure 失效
标题翻译：修饰化学放大抗蚀剂图案的方法，化学放大抗蚀剂图案的修饰剂和抗蚀剂图案结构
公开(公告)号：US08697342B2
公开(公告)日：2014-04-15
申请号：US13064130
申请日：2011-03-08
申请人： Ichiro Takemura , Isao Mita , Eriko Matsui , Nobuyuki Matsuzawa
发明人： Ichiro Takemura , Isao Mita , Eriko Matsui , Nobuyuki Matsuzawa
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0392 , G03F7/2024
摘要： Disclose herein is a method of modifying a positive-type chemically amplified resist pattern, including the steps of, applying to a surface of a resist pattern, an aqueous solution of a modifier for the positive-type chemically amplified resist pattern, the aqueous solution containing a water-soluble cross-linking agent and a penetration accelerator, the cross-linking agent and the penetration accelerator being dissolved in water or a mixed solvent containing water as a main ingredient, so as to permit the cross-linking agent to penetrate the resist pattern, removing a surplus of the cross-linking agent, and irradiating the resist pattern.
摘要翻译：本文公开的是改变正型化学放大抗蚀剂图案的方法，包括以下步骤：向抗蚀剂图案的表面施加用于正型化学增强抗蚀剂图案的改性剂的水溶液，含有水溶性交联剂和渗透促进剂，交联剂和渗透促进剂溶解于水或以水为主要成分的混合溶剂中，以使交联剂透过抗蚀剂除去剩余的交联剂，并照射抗蚀剂图案。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式