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1. 发明申请

US20100291754A1 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体基板及其制造方法以及制造半导体器件的方法
公开(公告)号：US20100291754A1
公开(公告)日：2010-11-18
申请号：US12844224
申请日：2010-07-27
申请人： Masaki KOYAMA , Fumito ISAKA , Akihisa SHIMOMURA , Junpei MOMO
发明人： Masaki KOYAMA , Fumito ISAKA , Akihisa SHIMOMURA , Junpei MOMO
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.
摘要翻译：用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。用激光束照射与单晶半导体衬底分离的单晶半导体层。通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。在激光束照射之后，在单晶半导体层未熔融的温度下加热单晶半导体层，从而提高单晶半导体层的寿命。

2. 发明申请

US20090111244A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090111244A1
公开(公告)日：2009-04-30
申请号：US12246577
申请日：2008-10-07
申请人： Shunpei YAMAZAKI , Junpei MOMO , Fumito ISAKA , Eiji HIGA , Masaki KOYAMA , Akihisa SHIMOMURA
发明人： Shunpei YAMAZAKI , Junpei MOMO , Fumito ISAKA , Eiji HIGA , Masaki KOYAMA , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , B23K26/03 , B23K26/083 , B23K26/12 , B23K26/127 , B23K26/14 , H01L21/268 , H01L21/3247 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
摘要翻译：照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

3. 发明申请

US20090117716A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：制造半导体器件的方法和半导体器件和电子器件
公开(公告)号：US20090117716A1
公开(公告)日：2009-05-07
申请号：US12259241
申请日：2008-10-27
申请人： Akihisa SHIMOMURA , Junpei Momo , Fumito Isaka
发明人： Akihisa SHIMOMURA , Junpei Momo , Fumito Isaka
IPC分类号： H01L21/62
CPC分类号： H01L21/76254
摘要： To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor device without performing mechanical polishing, and to provide an electronic device using the semiconductor device, planarity of a semiconductor layer is improved and defects in the semiconductor layer are reduced by laser beam irradiation. Accordingly, a high-performance semiconductor device can be provided without performing mechanical polishing. In addition, a semiconductor device is manufactured using a region having the most excellent characteristics in a region irradiated with the laser beam. Specifically, instead of the semiconductor layer in a region which is irradiated with the edge portion of the laser beam, the semiconductor layer in a region which is irradiated with portions of the laser beam except the edge portion is used as a semiconductor element. Accordingly, performance of the semiconductor device can be greatly improved. Moreover, an excellent electronic device can be provided.
摘要翻译：为了提供使用其中使用耐热性低的衬底的SOI衬底的高性能半导体器件用作基底衬底，以提供不执行机械抛光的高性能半导体器件，并且提供使用该半导体器件的电子器件通过激光束照射改善了半导体层的平坦度，减小了半导体层的缺陷。因此，可以提供高性能半导体器件而不进行机械抛光。此外，使用在激光束照射的区域中具有最优异特性的区域来制造半导体器件。具体地，代替在激光束的边缘部分照射的区域中的半导体层，将被照射到除了边缘部分之外的部分激光束的区域中的半导体层用作半导体元件。因此，可以大大提高半导体器件的性能。此外，可以提供优良的电子装置。

4. 发明申请

US20090115028A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：制造半导体衬底，半导体器件和电子器件的方法
公开(公告)号：US20090115028A1
公开(公告)日：2009-05-07
申请号：US12246569
申请日：2008-10-07
申请人： Akihisa SHIMOMURA , Fumito ISAKA , Yoji NAGANO , Junpei MOMO
发明人： Akihisa SHIMOMURA , Fumito ISAKA , Yoji NAGANO , Junpei MOMO
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L27/1266 , H01L21/02532 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1285 , H01L29/66772
摘要： A semiconductor substrate including a single crystal semiconductor layer with a buffer layer interposed therebetween is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged layer containing a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the semiconductor substrate is heated so that the single crystal semiconductor substrate is separated along a separation plane. The single crystal semiconductor layer is irradiated with a laser beam from the single crystal semiconductor layer side to melt a region in the depth direction from the surface of the laser-irradiated region of the single crystal semiconductor layer. Recrystallization progresses based on the plane orientation of the single crystal semiconductor layer which is solid without being melted; therefore, crystallinity of the single crystal semiconductor layer is recovered and the surface of the single crystal semiconductor layer is planarized.
摘要翻译：制造包括其间具有缓冲层的单晶半导体层的半导体衬底。掺杂氢的半导体衬底形成含有大量氢的损伤层。在单晶半导体衬底和支撑衬底接合之后，加热半导体衬底，使得单晶半导体衬底沿着分离平面分离。用单晶半导体层侧的激光照射单晶半导体层，从单晶半导体层的激光照射区域的表面向深度方向熔融区域。基于固体的单晶半导体层的平面取向而不熔化而进行重结晶; 因此，回收单晶半导体层的结晶度，使单晶半导体层的表面平坦化。

5. 发明申请

US20100029058A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100029058A1
公开(公告)日：2010-02-04
申请号：US12512141
申请日：2009-07-30
申请人： Akihisa SHIMOMURA , Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
发明人： Akihisa SHIMOMURA , Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02675 , H01L21/2007
摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.
摘要翻译：要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。激光照射在还原气氛或惰性气氛下进行。

6. 发明申请

US20090239354A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090239354A1
公开(公告)日：2009-09-24
申请号：US12399047
申请日：2009-03-06
申请人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
发明人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.
摘要翻译：在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层，通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层，所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理，具有激光的晶体半导体层。

7. 发明申请

US20110212596A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110212596A1
公开(公告)日：2011-09-01
申请号：US13106158
申请日：2011-05-12
申请人： Akihisa SHIMOMURA , Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
发明人： Akihisa SHIMOMURA , Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02675 , H01L21/2007
摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.
摘要翻译：要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。激光照射在还原气氛或惰性气氛下进行。

8. 发明申请

US20110287605A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110287605A1
公开(公告)日：2011-11-24
申请号：US13198171
申请日：2011-08-04
申请人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
发明人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.
摘要翻译：在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层，通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层，所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理，具有激光的晶体半导体层。

9. 发明申请

US20100291755A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20100291755A1
公开(公告)日：2010-11-18
申请号：US12844856
申请日：2010-07-28
申请人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

10. 发明申请

US20100275990A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100275990A1
公开(公告)日：2010-11-04
申请号：US12768351
申请日：2010-04-27
申请人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO
发明人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO
IPC分类号： H01L31/00 , H01L21/78 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/028 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/075 , H01L31/1864 , H01L31/1892 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： To provide a novel photoelectric conversion device and a manufacturing method thereof. Over a base substrate having a light-transmitting property, a light-transmitting insulating layer and a single crystal semiconductor layer over the insulating layer are formed. A plurality of first impurity semiconductor layers each having one conductivity type is provided in a band shape in a surface layer of the single crystal semiconductor layer or on a surface of the single crystal semiconductor layer, and a plurality of second impurity semiconductor layers each having a conductivity type which is opposite to the one conductivity type is provided in a band shape in such a manner that the first impurity semiconductor layers and the second impurity semiconductor layers are alternately provided and do not overlap with each other. First electrodes in contact with the first impurity semiconductor layers and second electrodes in contact with the second impurity semiconductor layers are provided, and a back contact cell is formed, whereby a photoelectric conversion device provided with a photo acceptance surface on the base substrate side is formed.
摘要翻译：提供一种新颖的光电转换装置及其制造方法。在绝缘层上方形成具有透光性的基底基板，透光绝缘层和单晶半导体层。在单晶半导体层的表面层或单晶半导体层的表面上，具有一个导电型的多个第一杂质半导体层被设置成带状，以及多个第二杂质半导体层，以与第一杂质半导体层和第二杂质半导体层交替地设置并且彼此不重叠的带状形式提供与一种导电类型相反的导电类型。提供与第一杂质半导体层和与第二杂质半导体层接触的第二电极接触的第一电极，形成背接触电池，由此形成在基底侧上设置有光接收表面的光电转换装置。

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