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1. 发明授权

US5780913A Photoelectric tube using electron beam irradiation diode as anode 失效
标题翻译：光电管采用电子束照射二极管作为阳极
公开(公告)号：US5780913A
公开(公告)日：1998-07-14
申请号：US954616
申请日：1997-10-27
申请人： Masaharu Muramatsu , Motohiro Suyama , Koei Yamamoto
发明人： Masaharu Muramatsu , Motohiro Suyama , Koei Yamamoto
IPC分类号： H01J31/49 , H01L31/115
CPC分类号： H01J31/49
摘要： When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.
摘要翻译：当光入射到该电子管的光电表面上时，发射光电子。这些光电子被加速并入射在电子束照射二极管上。大约100V的反向电压被施加到电子束照射二极管，以在整个阳极层和硅衬底的p-n结界面附近形成耗尽区。事件加速电子在具有电子入射表面和耗尽的阳极层的重掺杂p型层中释放动能以形成电子 - 空穴对。在这种情况下，由于具有电子入射面的重掺杂p型层非常薄，所以在该层中几乎不释放能量，几乎所有能量在耗尽区中释放。从释放能量时形成的电子 - 空穴对提取的信号电荷作为来自两个电极的信号被输出。

2. 发明授权

US5654536A Photomultiplier having a multilayer semiconductor device 失效
标题翻译：具有多层半导体器件的光电倍增管
公开(公告)号：US5654536A
公开(公告)日：1997-08-05
申请号：US557541
申请日：1995-11-14
申请人： Motohiro Suyama , Masaharu Muramatsu , Makoto Oishi , Yoshitaka Ishikawa , Koei Yamamoto
发明人： Motohiro Suyama , Masaharu Muramatsu , Makoto Oishi , Yoshitaka Ishikawa , Koei Yamamoto
IPC分类号： H01J43/04 , H01J43/12 , H01L31/107 , H01J40/14
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12
摘要： In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.
摘要翻译：在本发明的光电倍增器中，布置在外壳中以与光电阴极相对的半导体器件由第一导电类型的半导体衬底，不同于第一导电类型的第二导电类型的载流子倍增层构成，形成在所述半导体衬底上通过外延生长形成第二导电类型的击穿电压控制层，所述第二导电类型的击穿电压控制层形成在所述载体倍增层上并且具有高于载流子倍增层的掺杂剂浓度的第一绝缘层，控制层和所述载体倍增层，同时部分地暴露作为光电子的受体的击穿电压控制层的表面，并由氮化物和形成在击穿电压控制层的受体的外围表面部分上的欧姆电极层组成。当基于外延生长均匀地控制载体倍增层中的掺杂剂浓度分布时，提高入射在半导体器件的接收器上的不同位置处的光电子的雪崩倍增益的均匀性，从而大大提高能量分辨能力。

3. 发明申请

US20120256287A1 BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：后置照明固态图像拾取器件
公开(公告)号：US20120256287A1
公开(公告)日：2012-10-11
申请号：US13258696
申请日：2010-03-23
申请人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148
CPC分类号： H01L27/1464 , H01L27/14818 , H01L27/1485
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.
摘要翻译：在背照式固体摄像装置中，包括具有在背面侧具有光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的多个电荷转移电极2，相对于光入射面，在彼此相邻的电荷转移电极2之间形成有用于透射光的多个开口OP。此外，可以在每个电荷转移电极2内部形成用于透射光的多个开口OP。

4. 发明授权

US08624301B2 Back-illuminated solid-state image pickup device 有权
标题翻译：背照式固态摄像装置
公开(公告)号：US08624301B2
公开(公告)日：2014-01-07
申请号：US13258696
申请日：2010-03-23
申请人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148
CPC分类号： H01L27/1464 , H01L27/14818 , H01L27/1485
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.
摘要翻译：在背照式固体摄像装置中，包括具有在背面侧具有光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的多个电荷转移电极2，相对于光入射面，在彼此相邻的电荷转移电极2之间形成有用于透射光的多个开口OP。此外，可以在每个电荷转移电极2内部形成用于透射光的多个开口OP。

5. 发明授权

US09000492B2 Back-illuminated solid-state image pickup device 有权
标题翻译：背照式固态摄像装置
公开(公告)号：US09000492B2
公开(公告)日：2015-04-07
申请号：US13258680
申请日：2010-03-24
申请人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0352 , H01L31/0236
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14625 , H01L27/14806 , H01L31/02363 , H01L31/035281
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
摘要翻译：在背照式固体摄像装置中，包括具有背面侧的光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的电荷转移电极2相对于光入射面，光检测面具有不平坦的表面。通过具有不平坦表面的光检测表面，抑制由不平坦表面反射的光相对于入射光的相位具有散射的相位差并导致相互抵消的干涉光，因此抑制了金属化。因此，可以通过背照式固态图像拾取装置获得高质量的图像。

6. 发明申请

US20120038016A1 BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：后置照明固态图像拾取器件
公开(公告)号：US20120038016A1
公开(公告)日：2012-02-16
申请号：US13258680
申请日：2010-03-24
申请人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L31/0224
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14625 , H01L27/14806 , H01L31/02363 , H01L31/035281
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
摘要翻译：在背照式固体摄像装置中，包括具有背面侧的光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的电荷转移电极2相对于光入射面，光检测面具有不平坦的表面。通过具有不平坦表面的光检测表面，抑制由不平坦表面反射的光相对于入射光的相位具有散射的相位差并导致相互抵消的干涉光，因此抑制了金属化。因此，可以通过背照式固态图像拾取装置获得高质量的图像。

7. 发明授权

US06724062B2 Semiconductor energy detector 有权
标题翻译：半导体能量探测器
公开(公告)号：US06724062B2
公开(公告)日：2004-04-20
申请号：US09886110
申请日：2001-06-22
申请人： Hiroshi Akahori , Hisanori Suzuki , Kazuhisa Miyaguchi , Masaharu Muramatsu , Koei Yamamoto
发明人： Hiroshi Akahori , Hisanori Suzuki , Kazuhisa Miyaguchi , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L3100
CPC分类号： H01L27/14812
摘要： A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.
摘要翻译：这里所公开的一种半导体能量检测器被布置成在CCD垂直移位寄存器的传输电极的正面上形成铝布线图形，该垂直移位寄存器的图形包括用于执行辅助应用/补充的曲折辅助布线和用于执行的附加布线以与辅助布线无关的方式辅助补偿传输电压，其中相应的这些布线连接到相应的传输电极，从而避免在由多晶硅制成的那些传输电极处的引线电阻的问题，从而实现预期的电荷转移高速高效率。

8. 发明授权

US06541753B2 Semiconductor energy detector having reinforcement 有权
标题翻译：具有加强的半导体能量检测器
公开(公告)号：US06541753B2
公开(公告)日：2003-04-01
申请号：US09845204
申请日：2001-05-01
申请人： Hiroshi Akahori , Masaharu Muramatsu , Koei Yamamoto
发明人： Hiroshi Akahori , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L3100
CPC分类号： H01L27/14856 , H01L27/14601 , H01L27/1464 , H01L27/14806 , H01L27/14812
摘要： A substrate beam 1b is formed so as to divide a membrane for enabling detection of an energy ray upon back illumination, there by suppressing distortion of the membrane and preventing defocus upon detection due to the distortion, or the like. The distance is set sufficiently short from each region of the membrane to a substrate frame or to the substrate beam, thereby decreasing substrate resistance and enabling high-speed reading operation.
摘要翻译：形成基板光束1b，以便在背光照射时能够分离膜，以便能够在背照射下检测能量射线，通过抑制膜的变形并防止由于变形等而在检测时的散焦。该距离被设定为从薄膜的每个区域到基板框架或基板光束足够短，从而降低基板电阻并实现高速读取操作。

9. 发明授权

US08947771B2 Optical amplifying device 有权
标题翻译：光放大装置
公开(公告)号：US08947771B2
公开(公告)日：2015-02-03
申请号：US12307080
申请日：2007-07-11
申请人： Koei Yamamoto , Toshiharu Moriguchi , Shingo Oishi , Masatoshi Fujimoto , Shigeru Sakamoto , Hironori Takahashi , Haruyasu Ito , Yoichi Kawada , Shinichiro Aoshima
发明人： Koei Yamamoto , Toshiharu Moriguchi , Shingo Oishi , Masatoshi Fujimoto , Shigeru Sakamoto , Hironori Takahashi , Haruyasu Ito , Yoichi Kawada , Shinichiro Aoshima
IPC分类号： H01S3/081 , H01S3/23 , H01S3/00 , H01S3/02 , H01S3/04 , H01S3/042 , H01S3/06 , H01S3/08 , H01S3/083 , H01S3/0941
CPC分类号： H01S3/2333 , H01S3/0057 , H01S3/027 , H01S3/0407 , H01S3/042 , H01S3/0606 , H01S3/0621 , H01S3/0623 , H01S3/08095 , H01S3/083 , H01S3/09415 , H01S3/2316 , H01S3/2325 , H01S3/235
摘要： The present invention provides an optical amplifying device which can be easily downsized, increased in output, and stabilized. An optical amplifying device 1A includes an optical amplifier 10A and an energy supplier 30. The optical amplifier 10A includes an optical amplifying medium 11 and a transparent medium 12. The energy supplier 30 supplies excitation energy (for example, excitation light) to the optical amplifying medium 11. The optical amplifying medium 11 is supplied with the excitation light to amplify light and output it. To-be-amplified light passes through the transparent medium 12 in the optical amplifying medium 11 a plurality of times. The transparent medium 12 can propagate the to-be-amplified light, for example, zigzag inside.
摘要翻译：本发明提供一种可以容易地小型化，增加输出并稳定的光放大装置。光放大器1A包括光放大器10A和能量供给器30.光放大器10A包括光放大介质11和透明介质12.能量供应器30将激发能（例如激发光）提供给光放大器光放大介质11被提供有激发光以放大光并将其输出。被放大的光通过光放大介质11中的透明介质12多次。透明介质12可以传播被放大的光，例如在里面进行锯齿形。

10. 发明申请

US20120330568A1 GAS CONCENTRATION CALCULATION DEVICE, GAS CONCENTRATION MEASUREMENT MODULE, AND LIGHT DETECTOR 审中-公开
标题翻译：气体浓度计算装置，气体浓度测量模块和光探测器
公开(公告)号：US20120330568A1
公开(公告)日：2012-12-27
申请号：US13578895
申请日：2011-02-14
申请人： Toshiyuki Izawa , Koei Yamamoto
发明人： Toshiyuki Izawa , Koei Yamamoto
IPC分类号： G06F19/00 , G01J1/04
CPC分类号： G01N21/3504 , G01N21/0303 , G01N21/61
摘要： A gas concentration measuring module (2X) includes a gas cell (10X) configured to form an introduction space (11X) into which a sample gas (50X) is introduced, an infrared light source (21X) disposed at one end of the gas cell (10X), a reference light receiving element (31X) and a signal light receiving element (32X) disposed at the other end of the gas cell (10X) and configured to receive infrared light emitted from the infrared light source (21X), and an inert gas chamber (40X) disposed on an optical path between the infrared light source (21X) and the reference light receiving element (31X) in the introduction space (11X) and in which an inert gas, inert with respect to the infrared light emitted from the infrared light source (21X) is hermetically enclosed. A calculation circuit (3X) calculates a concentration of carbon dioxide in the sample gas (50X) based on a ratio between an energy value of light received by the reference light receiving element (31X) and an energy value of infrared light received by the signal light receiving element (32X) of the gas concentration measuring module (2X).
摘要翻译：气体浓度测量模块（2X）包括：气体电池（10X），被配置为形成引入空气（11X），其中引入样品气体（50X）;红外光源（21X），设置在所述气室的一端（10X），参考光接收元件（31X）和设置在气室（10X）的另一端处的信号光接收元件（32X），并且被配置为接收从红外光源（21X）发射的红外光;以及设置在导入空间（11X）中的红外线光源（21X）和基准光接收元件（31X）之间的光路上的惰性气体室（40X），其中相对于红外线为惰性的惰性气体从红外光源（21X）发射的气密密封。计算电路（3X）基于由参考光接收元件（31X）接收的光的能量值与由信号接收的红外线的能量值之间的比率，计算样品气体（50X）中的二氧化碳浓度气体浓度测量模块（2X）的光接收元件（32X）。

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