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1. 发明授权

US06724062B2 Semiconductor energy detector 有权
标题翻译：半导体能量探测器
公开(公告)号：US06724062B2
公开(公告)日：2004-04-20
申请号：US09886110
申请日：2001-06-22
申请人： Hiroshi Akahori , Hisanori Suzuki , Kazuhisa Miyaguchi , Masaharu Muramatsu , Koei Yamamoto
发明人： Hiroshi Akahori , Hisanori Suzuki , Kazuhisa Miyaguchi , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L3100
CPC分类号： H01L27/14812
摘要： A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.
摘要翻译：这里所公开的一种半导体能量检测器被布置成在CCD垂直移位寄存器的传输电极的正面上形成铝布线图形，该垂直移位寄存器的图形包括用于执行辅助应用/补充的曲折辅助布线和用于执行的附加布线以与辅助布线无关的方式辅助补偿传输电压，其中相应的这些布线连接到相应的传输电极，从而避免在由多晶硅制成的那些传输电极处的引线电阻的问题，从而实现预期的电荷转移高速高效率。

2. 发明申请

US20120256287A1 BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：后置照明固态图像拾取器件
公开(公告)号：US20120256287A1
公开(公告)日：2012-10-11
申请号：US13258696
申请日：2010-03-23
申请人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148
CPC分类号： H01L27/1464 , H01L27/14818 , H01L27/1485
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.
摘要翻译：在背照式固体摄像装置中，包括具有在背面侧具有光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的多个电荷转移电极2，相对于光入射面，在彼此相邻的电荷转移电极2之间形成有用于透射光的多个开口OP。此外，可以在每个电荷转移电极2内部形成用于透射光的多个开口OP。

3. 发明授权

US06541753B2 Semiconductor energy detector having reinforcement 有权
标题翻译：具有加强的半导体能量检测器
公开(公告)号：US06541753B2
公开(公告)日：2003-04-01
申请号：US09845204
申请日：2001-05-01
申请人： Hiroshi Akahori , Masaharu Muramatsu , Koei Yamamoto
发明人： Hiroshi Akahori , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L3100
CPC分类号： H01L27/14856 , H01L27/14601 , H01L27/1464 , H01L27/14806 , H01L27/14812
摘要： A substrate beam 1b is formed so as to divide a membrane for enabling detection of an energy ray upon back illumination, there by suppressing distortion of the membrane and preventing defocus upon detection due to the distortion, or the like. The distance is set sufficiently short from each region of the membrane to a substrate frame or to the substrate beam, thereby decreasing substrate resistance and enabling high-speed reading operation.
摘要翻译：形成基板光束1b，以便在背光照射时能够分离膜，以便能够在背照射下检测能量射线，通过抑制膜的变形并防止由于变形等而在检测时的散焦。该距离被设定为从薄膜的每个区域到基板框架或基板光束足够短，从而降低基板电阻并实现高速读取操作。

4. 发明授权

US08624301B2 Back-illuminated solid-state image pickup device 有权
标题翻译：背照式固态摄像装置
公开(公告)号：US08624301B2
公开(公告)日：2014-01-07
申请号：US13258696
申请日：2010-03-23
申请人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148
CPC分类号： H01L27/1464 , H01L27/14818 , H01L27/1485
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.
摘要翻译：在背照式固体摄像装置中，包括具有在背面侧具有光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的多个电荷转移电极2，相对于光入射面，在彼此相邻的电荷转移电极2之间形成有用于透射光的多个开口OP。此外，可以在每个电荷转移电极2内部形成用于透射光的多个开口OP。

5. 发明申请

US20120038016A1 BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：后置照明固态图像拾取器件
公开(公告)号：US20120038016A1
公开(公告)日：2012-02-16
申请号：US13258680
申请日：2010-03-24
申请人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L31/0224
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14625 , H01L27/14806 , H01L31/02363 , H01L31/035281
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
摘要翻译：在背照式固体摄像装置中，包括具有背面侧的光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的电荷转移电极2相对于光入射面，光检测面具有不平坦的表面。通过具有不平坦表面的光检测表面，抑制由不平坦表面反射的光相对于入射光的相位具有散射的相位差并导致相互抵消的干涉光，因此抑制了金属化。因此，可以通过背照式固态图像拾取装置获得高质量的图像。

6. 发明授权

US09000492B2 Back-illuminated solid-state image pickup device 有权
标题翻译：背照式固态摄像装置
公开(公告)号：US09000492B2
公开(公告)日：2015-04-07
申请号：US13258680
申请日：2010-03-24
申请人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0352 , H01L31/0236
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14625 , H01L27/14806 , H01L31/02363 , H01L31/035281
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
摘要翻译：在背照式固体摄像装置中，包括具有背面侧的光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的电荷转移电极2相对于光入射面，光检测面具有不平坦的表面。通过具有不平坦表面的光检测表面，抑制由不平坦表面反射的光相对于入射光的相位具有散射的相位差并导致相互抵消的干涉光，因此抑制了金属化。因此，可以通过背照式固态图像拾取装置获得高质量的图像。

7. 发明授权

US5519751A Medical X-ray image processing apparatus 失效
标题翻译：医用X射线图像处理装置
公开(公告)号：US5519751A
公开(公告)日：1996-05-21
申请号：US435274
申请日：1995-05-05
申请人： Koei Yamamoto , Kazuhisa Miyaguchi , Keisuke Mori , Akifumi Tachibana , Takao Makino
发明人： Koei Yamamoto , Kazuhisa Miyaguchi , Keisuke Mori , Akifumi Tachibana , Takao Makino
IPC分类号： A61B6/00 , B82B1/00 , G01T1/20 , H04N5/32 , A61B6/14
CPC分类号： G01T1/2018 , H04N5/32
摘要： A medical X-ray image processing apparatus, comprising an X-ray sensor which converts an image of X-rays penetrated an object into an electric signal using a solid-state image sensor and a data processor which processes the electric signal to generate an electric image signal corresponding to the X-ray image, compares the data of each picture element derived from the above-mentioned solid-state image sensor with the data of picture elements being adjacent to the picture element and present within a certain region, and corrects the data of the picture element referring to the data of the above-mentioned adjacent picture elements only when the data of the picture element is exceptionally different from the data of the adjacent picture elements by a predetermined reference value or more. Consequently, the apparatus eliminates only the exceptionally large noise, such as spike noise caused by the X-rays having directly reached the solid-state image sensor and also caused by the secondary X-rays, thereby being capable of generating images having high resolution.
摘要翻译：一种医用X射线图像处理装置，包括：X射线传感器，其使用固态图像传感器和数据处理器将X射线的图像转换成电信号，所述X射线传感器处理所述电信号以产生电对应于X射线图像的图像信号将从上述固态图像传感器导出的每个图像元素的数据与与图像元素相邻并且存在于某一区域内的图像元素的数据进行比较，并校正只有当图像元素的数据与相邻图像元素的数据异常地超过预定参考值或更大时才参考上述相邻图像元素的数据。因此，该装置仅消除例如由直接到达固态图像传感器的X射线引起的尖峰噪声并且也由次级X射线引起的特别大的噪声，从而能够产生高分辨率的图像。

8. 发明授权

US5461233A Medical X-ray image detecting device and a medical X-ray tomographing apparatus comprising same 失效
标题翻译：医用X射线图像检测装置及包含该X射线图像检测装置的医用X射线断层摄像装置
公开(公告)号：US5461233A
公开(公告)日：1995-10-24
申请号：US210950
申请日：1994-03-21
申请人： Koei Yamamoto , Kazuhisa Miyaguchi , Notio Takahashi , Keisuke Mori , Masakazu Suzuki , Takao Makino
发明人： Koei Yamamoto , Kazuhisa Miyaguchi , Notio Takahashi , Keisuke Mori , Masakazu Suzuki , Takao Makino
IPC分类号： A61B6/00 , A61B6/14 , G01T1/20
CPC分类号： A61B6/14 , G01T1/2018
摘要： A medical X-ray tomographing apparatus, wherein the output end surfaces of a plurality of optical fiber bundles are optically coupled to the image pickup surfaces of vertically long solid-state image pickup devices, such as one-dimensional image sensors, and the input end surfaces of a plurality of the optical fiber bundles having a vertically long cross-sectional shape being identical to that of the output end surfaces thereof are optically coupled individually to a plurality of vertically long divisions obtained by dividing the fluorescent surface of a scintillator in the width direction thereof. With this apparatus, it is not necessary to significantly contract the size of the image on the fluorescent surface, thereby remarkably reducing the number of the solid-state image pickup devices and the number of the divisions of the fluorescent surface.
摘要翻译：一种医用X射线断层摄影装置，其中，多个光纤束的输出端面光学耦合到诸如一维图像传感器的垂直长度固态图像拾取装置的图像拾取表面，并且输入端具有与其输出端面相同的垂直长横截面形状的多个光纤束的表面被光耦合到通过将闪烁体的荧光表面划分为宽度而获得的多个垂直长分割方向。利用该装置，不需要在荧光表面上显着地收缩图像的尺寸，从而显着地减少固态图像拾取装置的数量和荧光表面的分割数。

9. 发明授权

US5780913A Photoelectric tube using electron beam irradiation diode as anode 失效
标题翻译：光电管采用电子束照射二极管作为阳极
公开(公告)号：US5780913A
公开(公告)日：1998-07-14
申请号：US954616
申请日：1997-10-27
申请人： Masaharu Muramatsu , Motohiro Suyama , Koei Yamamoto
发明人： Masaharu Muramatsu , Motohiro Suyama , Koei Yamamoto
IPC分类号： H01J31/49 , H01L31/115
CPC分类号： H01J31/49
摘要： When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.
摘要翻译：当光入射到该电子管的光电表面上时，发射光电子。这些光电子被加速并入射在电子束照射二极管上。大约100V的反向电压被施加到电子束照射二极管，以在整个阳极层和硅衬底的p-n结界面附近形成耗尽区。事件加速电子在具有电子入射表面和耗尽的阳极层的重掺杂p型层中释放动能以形成电子 - 空穴对。在这种情况下，由于具有电子入射面的重掺杂p型层非常薄，所以在该层中几乎不释放能量，几乎所有能量在耗尽区中释放。从释放能量时形成的电子 - 空穴对提取的信号电荷作为来自两个电极的信号被输出。

10. 发明授权

US5654536A Photomultiplier having a multilayer semiconductor device 失效
标题翻译：具有多层半导体器件的光电倍增管
公开(公告)号：US5654536A
公开(公告)日：1997-08-05
申请号：US557541
申请日：1995-11-14
申请人： Motohiro Suyama , Masaharu Muramatsu , Makoto Oishi , Yoshitaka Ishikawa , Koei Yamamoto
发明人： Motohiro Suyama , Masaharu Muramatsu , Makoto Oishi , Yoshitaka Ishikawa , Koei Yamamoto
IPC分类号： H01J43/04 , H01J43/12 , H01L31/107 , H01J40/14
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12
摘要： In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.
摘要翻译：在本发明的光电倍增器中，布置在外壳中以与光电阴极相对的半导体器件由第一导电类型的半导体衬底，不同于第一导电类型的第二导电类型的载流子倍增层构成，形成在所述半导体衬底上通过外延生长形成第二导电类型的击穿电压控制层，所述第二导电类型的击穿电压控制层形成在所述载体倍增层上并且具有高于载流子倍增层的掺杂剂浓度的第一绝缘层，控制层和所述载体倍增层，同时部分地暴露作为光电子的受体的击穿电压控制层的表面，并由氮化物和形成在击穿电压控制层的受体的外围表面部分上的欧姆电极层组成。当基于外延生长均匀地控制载体倍增层中的掺杂剂浓度分布时，提高入射在半导体器件的接收器上的不同位置处的光电子的雪崩倍增益的均匀性，从而大大提高能量分辨能力。

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