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    • 1. 发明授权
    • Flat panel display containing black matrix polymer
    • 含黑色矩阵聚合物的平板显示器
    • US5619357A
    • 1997-04-08
    • US466317
    • 1995-06-06
    • Marie AngelopoulosAli Afzali-ArdakaniClaudius FegerChandrasekhar Narayan
    • Marie AngelopoulosAli Afzali-ArdakaniClaudius FegerChandrasekhar Narayan
    • G02F1/1335
    • G02F1/133512
    • A thin film transistor display that comprises a black matrix polymer layer, comprising a polymer having an optical density of at least about 0.8 per .mu.m and being self-absorbent of visible light and being selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substituted and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. The layer also comprises one or more pigments. The resistivity of the black matrix composite is 10E12 to 10E14 ohm cm.
    • 一种薄膜晶体管显示器,其包括黑矩阵聚合物层,其包含光密度为至少约0.8每μm的聚合物,并且是可吸收的可见光,并且选自取代和未取代的聚苯胺,取代的 取代和未取代的聚噻吩,取代和未取代的聚噻吩,取代和未取代的聚嗪,取代和未取代的聚对苯二烯,取代和未取代的聚呋喃,取代和未取代的聚吡咯,取代和未取代的聚硒吩,取代和未取代的聚对苯硫醚和取代和未取代的聚乙炔, 其混合物,及其共聚物。 该层还包含一种或多种颜料。 黑色矩阵复合材料的电阻率为10E12至10E14欧姆厘米。
    • 9. 发明授权
    • Chemical oxidation of graphene and carbon nanotubes using Cerium (IV) ammonium nitrate
    • 使用硝酸铈(IV)硝酸铵对石墨烯和碳纳米管进行化学氧化
    • US08912525B2
    • 2014-12-16
    • US13329115
    • 2011-12-16
    • Ali Afzali-ArdakaniBhupesh ChandraGeorge S. Tulevski
    • Ali Afzali-ArdakaniBhupesh ChandraGeorge S. Tulevski
    • H01L29/06
    • H01L29/78B82Y30/00B82Y40/00C01B32/168C01B32/194
    • A process comprises combining a Ce (IV) salt with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid and is dissolved in a solvent comprising water. The process is conducted under conditions to substantially oxidize the carbon material to produce an oxidized material that is substantially non-conducting. After the oxidation, the Ce (IV) is substantially removed from the oxidized material. This produces a product made by the process. An article of manufacture comprises the product on a substrate. The oxidized material can be formed as a pattern on the substrate. In another embodiment the substrate comprises an electronic device with the oxidized material patterning non-conductive areas separate from conductive areas of the non-oxidized carbon material, where the conductive areas are operatively associated with the device.
    • 一种方法包括将Ce(IV)盐与包含CNT或石墨烯的碳材料组合,其中Ce(IV)盐选自氮氧化物的Ce(IV)铵盐,并溶解在包含水的溶剂中。 该方法在基本上氧化碳材料以产生基本不导电的氧化材料的条件下进行。 在氧化之后,Ce(IV)从氧化物质中大体上去除。 这产生了由该过程制成的产品。 制品包括在基材上的产品。 氧化物可以形成为基板上的图案。 在另一个实施例中,衬底包括电子器件,其中氧化材料图案化非导电区域与非氧化碳材料的导电区域分离,其中导电区域与器件可操作地相关联。