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1. 发明授权

US08803130B2 Graphene transistors with self-aligned gates 有权
标题翻译：具有自对准栅极的石墨烯晶体管
公开(公告)号：US08803130B2
公开(公告)日：2014-08-12
申请号：US13492097
申请日：2012-06-08
申请人： Ali Afzali-Ardakani , Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
发明人： Ali Afzali-Ardakani , Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
IPC分类号： H01L29/06
CPC分类号： H01L29/1606 , H01L29/42376 , H01L29/66431 , H01L29/7781 , Y10S977/734
摘要： Graphene transistor devices and methods of their fabrication are disclosed. One such graphene transistor device includes source and drain electrodes and a gate structure including a dielectric sidewall spacer that is disposed between the source and drain electrodes. The device further includes a graphene layer that is adjacent to at least one of the source and drain electrodes, where an interface between the source/drain electrode(s) and the graphene layer maintains a consistent degree of electrical conductivity throughout the interface.
摘要翻译：公开了石墨烯晶体管器件及其制造方法。一种这样的石墨烯晶体管器件包括源电极和漏电极以及包括设置在源极和漏极之间的电介质侧壁间隔物的栅极结构。该器件还包括与源极和漏极电极中的至少一个相邻的石墨烯层，其中源/漏电极和石墨烯层之间的界面在整个界面处保持一致的电导率。

2. 发明授权

US08809153B2 Graphene transistors with self-aligned gates 有权
标题翻译：具有自对准栅极的石墨烯晶体管
公开(公告)号：US08809153B2
公开(公告)日：2014-08-19
申请号：US13468092
申请日：2012-05-10
申请人： Ali Afzali-Ardakani , Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
发明人： Ali Afzali-Ardakani , Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
IPC分类号： H01L21/336 , H01L29/16
CPC分类号： H01L29/1606 , H01L29/42376 , H01L29/66431 , H01L29/7781 , Y10S977/734
摘要： Graphene transistor devices and methods of their fabrication are disclosed. In accordance with one method, a resist is deposited to pattern a gate structure area over a graphene channel on a substrate. In addition, gate dielectric material and gate electrode material are deposited over the graphene channel and the resist. Further, the resist and the electrode and dielectric materials that are disposed above the resist are lifted-off to form a gate structure including a gate electrode and a gate dielectric spacer and to expose portions of the graphene channel that are adjacent to the gate structure. Additionally, source and drain electrodes are formed over the exposed portions of the graphene channel.
摘要翻译：公开了石墨烯晶体管器件及其制造方法。根据一种方法，沉积抗蚀剂以在基板上的石墨烯通道上图案化栅极结构区域。此外，栅介电材料和栅电极材料沉积在石墨烯通道和抗蚀剂上。此外，设置在抗蚀剂上方的抗蚀剂和电极和电介质材料被剥离以形成包括栅极电极和栅介质间隔物的栅极结构，并露出与栅极结构相邻的部分石墨烯通道。另外，在石墨烯通道的暴露部分上形成源电极和漏电极。

3. 发明申请

US20120056161A1 GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE 有权
标题翻译：具有自对准门的石墨晶体管
公开(公告)号：US20120056161A1
公开(公告)日：2012-03-08
申请号：US12876454
申请日：2010-09-07
申请人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
发明人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
IPC分类号： H01L29/76 , H01L21/335
CPC分类号： H01L29/1606 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/778 , H01L29/78684
摘要： A graphene-based field effect transistor includes source and drain electrodes that are self-aligned to a gate electrode. A stack of a seed layer and a dielectric metal oxide layer is deposited over a patterned graphene layer. A conductive material stack of a first metal portion and a second metal portion is formed above the dielectric metal oxide layer. The first metal portion is laterally etched employing the second metal portion, and exposed portions of the dielectric metal oxide layer are removed to form a gate structure in which the second metal portion overhangs the first metal portion. The seed layer is removed and the overhang is employed to shadow proximal regions around the gate structure during a directional deposition process to form source and drain electrodes that are self-aligned and minimally laterally spaced from edges of the gate electrode.
摘要翻译：基于石墨烯的场效应晶体管包括与栅电极自对准的源极和漏极。在图案化的石墨烯层上沉积种子层和电介质金属氧化物层的堆叠。第一金属部分和第二金属部分的导电材料堆叠形成在电介质金属氧化物层的上方。使用第二金属部分横向蚀刻第一金属部分，去除电介质金属氧化物层的暴露部分以形成其中第二金属部分悬垂在第一金属部分上的栅极结构。移除晶种层并且在定向沉积工艺期间使用突出部来遮蔽栅极结构周围的近端区域，以形成与栅电极的边缘自对准且最小程度地横向间隔的源电极和漏电极。

4. 发明授权

US08680512B2 Graphene transistor with a self-aligned gate 有权
标题翻译：具有自对准栅极的石墨烯晶体管
公开(公告)号：US08680512B2
公开(公告)日：2014-03-25
申请号：US13614530
申请日：2012-09-13
申请人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
发明人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
IPC分类号： H01L29/76
CPC分类号： H01L29/1606 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/778 , H01L29/78684
摘要： A transistor structure is provided which includes a graphene layer located on an insulating layer, a first metal portion overlying a portion of the graphene layer, a second metal portion contacting and overhanging the first metal portion, a first electrode contacting a portion of the graphene layer and laterally offset from a first sidewall of the first metal portion by a lateral spacing, and a second electrode contacting another portion of the graphene layer and laterally offset from a second sidewall of the first metal portion by the lateral spacing.
摘要翻译：提供一种晶体管结构，其包括位于绝缘层上的石墨烯层，覆盖石墨烯层的一部分的第一金属部分，与第一金属部分接触并悬垂的第二金属部分，与石墨烯层的一部分接触的第一电极并且横向间隔地从第一金属部分的第一侧壁偏移，并且第二电极接触石墨烯层的另一部分，并且横向间隔地与第一金属部分的第二侧壁横向偏移。

5. 发明授权

US08344358B2 Graphene transistor with a self-aligned gate 有权
标题翻译：具有自对准栅极的石墨烯晶体管
公开(公告)号：US08344358B2
公开(公告)日：2013-01-01
申请号：US12876454
申请日：2010-09-07
申请人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
发明人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
IPC分类号： H01L29/76
CPC分类号： H01L29/1606 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/778 , H01L29/78684
摘要： A graphene-based field effect transistor includes source and drain electrodes that are self-aligned to a gate electrode. A stack of a seed layer and a dielectric metal oxide layer is deposited over a patterned graphene layer. A conductive material stack of a first metal portion and a second metal portion is formed above the dielectric metal oxide layer. The first metal portion is laterally etched employing the second metal portion, and exposed portions of the dielectric metal oxide layer are removed to form a gate structure in which the second metal portion overhangs the first metal portion. The seed layer is removed and the overhang is employed to shadow proximal regions around the gate structure during a directional deposition process to form source and drain electrodes that are self-aligned and minimally laterally spaced from edges of the gate electrode.
摘要翻译：基于石墨烯的场效应晶体管包括与栅电极自对准的源极和漏极。在图案化的石墨烯层上沉积种子层和电介质金属氧化物层的堆叠。第一金属部分和第二金属部分的导电材料堆叠形成在电介质金属氧化物层的上方。使用第二金属部分横向蚀刻第一金属部分，去除电介质金属氧化物层的暴露部分以形成其中第二金属部分悬垂在第一金属部分上的栅极结构。移除晶种层并且在定向沉积工艺期间使用突出部来遮蔽栅极结构周围的近端区域，以形成与栅电极的边缘自对准且最小程度地横向间隔的源电极和漏电极。

6. 发明授权

US08753965B2 Graphene transistor with a self-aligned gate 有权
标题翻译：具有自对准栅极的石墨烯晶体管
公开(公告)号：US08753965B2
公开(公告)日：2014-06-17
申请号：US13602117
申请日：2012-09-01
申请人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
发明人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
IPC分类号： H01L21/3205
CPC分类号： H01L29/1606 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/778 , H01L29/78684
摘要： A method of forming a transistor structure is provided. The method includes forming a graphene layer on an insulating layer; forming a stack of a first metal portion and a second metal portion over the graphene layer, wherein sidewalls of the first metal portion are vertically coincident with sidewalls of the second metal portion; and laterally offsetting the sidewalls of the first metal portion relative to the sidewalls of the second metal portion by a lateral distance.
摘要翻译：提供一种形成晶体管结构的方法。该方法包括在绝缘层上形成石墨烯层; 在所述石墨烯层上形成第一金属部分和第二金属部分的堆叠，其中所述第一金属部分的侧壁与所述第二金属部分的侧壁垂直重合; 并且相对于第二金属部分的侧壁横向偏移第一金属部分的侧壁横向距离。

7. 发明申请

US20130009133A1 A GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE 有权
标题翻译：具有自对准门的石墨晶体管
公开(公告)号：US20130009133A1
公开(公告)日：2013-01-10
申请号：US13614530
申请日：2012-09-13
申请人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
发明人： Phaedon Avouris , Damon B. Farmer , Yu-Ming Lin , Yu Zhu
IPC分类号： H01L29/76 , B82Y99/00
CPC分类号： H01L29/1606 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/778 , H01L29/78684
摘要： A transistor structure is provided which includes a graphene layer located on an insulating layer, a first metal portion overlying a portion of the graphene layer, a second metal portion contacting and overhanging the first metal portion, a first electrode contacting a portion of the graphene layer and laterally offset from a first sidewall of the first metal portion by a lateral spacing, and a second electrode contacting another portion of the graphene layer and laterally offset from a second sidewall of the first metal portion by the lateral spacing.
摘要翻译：提供一种晶体管结构，其包括位于绝缘层上的石墨烯层，覆盖石墨烯层的一部分的第一金属部分，与第一金属部分接触并悬垂的第二金属部分，与石墨烯层的一部分接触的第一电极并且横向间隔地从第一金属部分的第一侧壁偏移，并且第二电极接触石墨烯层的另一部分，并且横向间隔地与第一金属部分的第二侧壁横向偏移。

8. 发明授权

US10840500B2 Superionic conductive polymer electrolyte composite for lithium battery 有权
公开(公告)号：US10840500B2
公开(公告)日：2020-11-17
申请号：US16434240
申请日：2019-06-07
申请人： Yu Zhu
发明人： Yu Zhu
IPC分类号： H01M4/131 , H01M4/136 , H01M4/1391 , H01M4/1397 , H01M10/0525 , H01M10/0565 , H01M4/02
CPC分类号： H01M4/131 , H01M4/136 , H01M4/1391 , H01M4/1397 , H01M10/0525 , H01M10/0565 , H01M2004/028 , H01M2300/0082 , H01M2300/0091
摘要： A method of creating a composite cathode for use within a lithium ion battery. The method beginning with the step of preparing an electrolytic solution. The electrolytic solution includes a plasticizer, a crosslinkable polyether, a first lithium salt and a second lithium salt. The method ending with the step of impregnating a cathodic material with the electrolytic solution so as to form the composite cathode.

9. 发明申请

US20200350588A1 CROSSLINKED POLYMER BINDERS FOR ELECTROCHEMICAL ENERGY STORAGE DEVICES 审中-公开
公开(公告)号：US20200350588A1
公开(公告)日：2020-11-05
申请号：US15780861
申请日：2016-12-05
申请人： Yu Zhu , Feng Zou
发明人： Yu Zhu , Feng Zou
IPC分类号： H01M4/62 , H01M4/139 , H01M10/0525
摘要： An electrochemical storage device including a conductive material and an electrochemical storage device material held together by a covalently crosslinked binder matrix. A method of forming an electrode for an electrochemical storage device, the method including the steps of: mixing electrochemical storage device material, conductive material, linear polymer, and crosslinker with one or more solvents, the resultant mixture forming an electrode slurry, crosslinking the linear polymer with the crosslinker to thereby create a covalently crosslinked polymer network of the polymer and crosslinker, the crosslinked polymer network physically or chemically binding together the electrochemical storage device material and the conductive material.

10. 发明授权

US09455650B2 Two-dimensional locating method of motion platform based on magnetic steel array 有权
标题翻译：基于磁钢阵列的运动平台二维定位方法
公开(公告)号：US09455650B2
公开(公告)日：2016-09-27
申请号：US13522788
申请日：2011-01-18
申请人： Jinchun Hu , Yu Zhu , Jinsong Wang , Ming Zhang , Kai Liao , Kaiming Yang , Dengfeng Xu , Wensheng Yin , Guanghong Duan
发明人： Jinchun Hu , Yu Zhu , Jinsong Wang , Ming Zhang , Kai Liao , Kaiming Yang , Dengfeng Xu , Wensheng Yin , Guanghong Duan
IPC分类号： G06F17/11 , H02N15/00 , G01D5/14
CPC分类号： H02N15/00 , G01D5/145
摘要： A two-dimensional locating method of a motion platform based on a magnetic steel array involves the following steps: placing more than four linear Hall sensors at any different positions within one or more polar distances of the magnetic steel array on the surface of the motion platform in a motion system; determining a magnetic flux density distribution model according to the magnetic steel array; determining the mounting positions of the above-mentioned linear Hall sensors, which are converted into phases with respect to the mass center of the motion platform; recording the magnetic flux density measured values of the linear Hall sensors as the motion proceeds; solving the phases of the mass center of the motion platform in a plane, with the measured values being served as observed quantities and the magnetic flux density distribution model being served as a computation model; and determining the position of the mass center of the motion platform with respect to an initial phase according to the phase, so as to realize the planar location of the motion platform. The present invention provides a simple, fast and robust method for computing mass center positions for a motion system containing a magnetic steel array.
摘要翻译：基于磁钢阵列的运动平台的二维定位方法包括以下步骤：将多于四个线性霍尔传感器放置在运动平台表面上的磁钢阵列的一个或多个极距离内的任何不同位置在运动系统中根据磁钢阵列确定磁通密度分布模型; 确定上述线性霍尔传感器的安装位置，其相对于运动平台的质心转换成相位; 在运动过程中记录线性霍尔传感器的磁通密度测量值; 解决平面中运动平台质心的相位，测量值作为观测量，磁通密度分布模型用作计算模型; 并根据相位确定运动平台的质量中心相对于初始相位的位置，以便实现运动平台的平面位置。本发明提供了一种用于计算包含磁钢阵列的运动系统的质心位置的简单，快速和鲁棒的方法。

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