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    • 4. 发明授权
    • Solid state chain extension polymerization between Lewis acid oligomers
and deblocked Lewis bases
    • 路易斯酸低聚物和解封路易斯碱之间的固态链延伸聚合
    • US5382637A
    • 1995-01-17
    • US785734
    • 1991-10-31
    • Marie AngelopoulosClaudius FegerJeffrey D. GelormeJane M. Shaw
    • Marie AngelopoulosClaudius FegerJeffrey D. GelormeJane M. Shaw
    • C08G73/10G03F7/004G03F7/038C08L77/00C08L79/08
    • C08G73/101G03F7/0045G03F7/0387
    • A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film. In an alternative embodiment, a positive resist is used by degrading and removing phot-sensitive Lewis acid oligomers using selective exposure lithography techniques and, subsequently, deblocking the Lewis base and chain extending the remaining oligomers with the deblocked Lewis base at the unexposed regions.
    • 固态链延伸方法提供了通过将路易斯酸低聚物链路延伸解链路易斯碱同时反应物呈固态形式形成由高分子量聚合物构成的固态膜。 在一个实施方案中,通过选择性地暴露固态膜的区域来制备负性抗蚀剂。 路易斯碱通过合适的去块装置在暴露区域解封。 路易斯酸低聚物和解封的路易斯碱基链在暴露的区域延伸。 膜的开发除去未聚合的反应物。 任选地,当辐射交联时,路易斯酸低聚物在将路易斯碱解封以形成负性抗蚀剂之前彼此交联。 交联的低聚物与随后的解封底物聚合以提供高分子量聚合物膜。 在替代实施方案中,通过使用选择性曝光光刻技术降解和除去光敏路易斯酸低聚物,并且随后使路易斯碱和链在未曝光区域上与解封的路易斯碱扩展剩余的低聚物,使用正性抗蚀剂。
    • 7. 发明授权
    • Flat panel display containing black matrix polymer
    • 含黑色矩阵聚合物的平板显示器
    • US5619357A
    • 1997-04-08
    • US466317
    • 1995-06-06
    • Marie AngelopoulosAli Afzali-ArdakaniClaudius FegerChandrasekhar Narayan
    • Marie AngelopoulosAli Afzali-ArdakaniClaudius FegerChandrasekhar Narayan
    • G02F1/1335
    • G02F1/133512
    • A thin film transistor display that comprises a black matrix polymer layer, comprising a polymer having an optical density of at least about 0.8 per .mu.m and being self-absorbent of visible light and being selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substituted and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. The layer also comprises one or more pigments. The resistivity of the black matrix composite is 10E12 to 10E14 ohm cm.
    • 一种薄膜晶体管显示器,其包括黑矩阵聚合物层,其包含光密度为至少约0.8每μm的聚合物,并且是可吸收的可见光,并且选自取代和未取代的聚苯胺,取代的 取代和未取代的聚噻吩,取代和未取代的聚噻吩,取代和未取代的聚嗪,取代和未取代的聚对苯二烯,取代和未取代的聚呋喃,取代和未取代的聚吡咯,取代和未取代的聚硒吩,取代和未取代的聚对苯硫醚和取代和未取代的聚乙炔, 其混合物,及其共聚物。 该层还包含一种或多种颜料。 黑色矩阵复合材料的电阻率为10E12至10E14欧姆厘米。