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    • 10. 发明专利
    • CVD APPARATUS
    • JPH0258824A
    • 1990-02-28
    • JP21096988
    • 1988-08-24
    • MITSUBISHI METAL CORP
    • TAKESHITA TAKUOHAGINO SADAAKISAKURAI TAKESHI
    • H01L21/205H01L21/263H01L21/31
    • PURPOSE:To increase a film depositing rate, to Iower the reaction heating temperature and to improve the recovery of raw materials by providing within a reaction vessel a susceptor for holding substrates on which a reaction product of the raw gas is to be deposited, and an ultraviolet radiating means for radiating ultraviolet rays along and orthogonally to the flowing direction of the raw gas. CONSTITUTION:Within a reaction vessel 11, a substrate holding face 26 is provided on each of three side faces of a susceptor 25 inclined at the same angle with respect to the flowing direction of raw gas so that a plurality of substrates on which a reaction product of the raw gas is to be deposited are held on these holding faces 26. An ultraviolet ray source 30 is provided near the reaction vessel and ultraviolet rays therefrom are guided via a mirror 31 to a half mirror 32 by which they are divided into two parts. One part of the ultraviolet rays is guided via a mirror 33 to a window 14 from which it enters the reaction vessel along the flowing direction of the gas. The other part of the ultraviolet rays is guided to a group of half mirrors 34 provided corresponding to windows 19, whereby it is divided equally and introduced into the vessel orthogonally fo the axis of the vessel. In this manner, the reaction can be accelerated while the product can be prevented from being reacted again.