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    • 8. 发明专利
    • FLUX METER
    • JPH01180477A
    • 1989-07-18
    • JP372088
    • 1988-01-13
    • HITACHI LTD
    • YAMASHITA TORUTARUYA YOSHINOBUKAWABE USHIO
    • H01L39/22G01R33/035
    • PURPOSE:To obtain a flux meter which operates stably at a high temp. and is capable of detecting slight magnetic waves by forming the meter of an inductor made of a thin high-temp. superconducting film, metallic film, insulating film, input coil, etc. CONSTITUTION:An insulating substrate 5 is stepped by a sputtering method, etc. The thin high-temp. superconducting film consisting of a Y-Ba-Cu oxide, etc., is formed by a method such as EB method thereon and the metallic film 2 consisting of Au, etc., is formed thereon by vapor deposition after a heat treatment. After the Josephson junction part of an SQUID inductor 3 and the step part of the substrate 5 are mated, patterning is executed by using a sputtering method, etc., to sputter and form the inter-layer insulating layer film 4. The thin high-temp. superconducting film or the like is further formed on the inter-layer insulating film 4 by a method such as EB method and patterning for the input coil is executed; thereafter, the film is subjected to the heat treatment to form the input coil 1.
    • 9. 发明专利
    • SUPERCONDUCTING ELEMENT
    • JPS6489477A
    • 1989-04-03
    • JP24372987
    • 1987-09-30
    • HITACHI LTD
    • YAMASHITA TORUTARUYA YOSHINOBUKAWABE USHIO
    • H01L39/22
    • PURPOSE:To miniaturize an element and improve its performance such as switching speed by implanting ions such as H, He, B, C, N, O, Ne, P, S, Ar, and As into the surface of an oxide superconducting thin-film to be provided with an insulating cover, and by making a crystal structure to be amorphous, at the same time oxygen being struck out selectively. CONSTITUTION:A Y-Ba-Cu oxide thin-film 3 is formed on a MgO single crystal substrate 4 by sputtering, and is annealed in an atmosphere of oxygen at 910 deg.C. H ions 1 are implanted into the surface of this thin-film with a gold electrode 2 attached, and an amorphous layer 50nm or over in depth on a superconducting film surface is made an interlayer insulating film 5. Furthermore, the Y-Ba-Cu oxide film 3 is manufactured by the sputtering method, and heat-treated at 910 deg.C. In this case, because the insulating film 5 is thermally stable, it does not produce a diffusion reaction with the oxide high-temperature superconducting film regardless of the heat treatment. Even if ions of such as He, B, C, N, O, Ne, P, S, Ar, and As are implanted into the Y-Ba-Cu oxide thin-film under the same conditions as those of the above H ions, the similar characteristics can be obtained.