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1. 发明专利

JPH02207555A SUBSTRATE FOR SEMICONDUCTOR DEVICE HAVING EXCELLENT HEAT DISSIPATION PROPERTIES 失效
公开(公告)号：JPH02207555A
公开(公告)日：1990-08-17
申请号：JP2801689
申请日：1989-02-07
申请人： MITSUBISHI METAL CORP
发明人： KUROMITSU YOSHIO , YOSHIDA HIDEAKI , TANAKA TADAHARU , UCHIDA HIROTO , NAGASE TOSHIYUKI
IPC分类号： H01L23/15 , H05K1/03
摘要： PURPOSE:To enhance the heat dissipation properties by a method wherein a surface coating layer composed of a ceramic in composition of a specific weight of TiO2 and remaining weight of SiO2 is formed on the surface of an AlN group sintered substrate in composition of specific weight of one or two kinds of Y2O3 and CaO and remaining weight of AlN as well as having oxide layer in specific thickness. CONSTITUTION:When a substrate composed of an AlN group sintered body in composition of 0.1-10weight% of one or two kinds out of Y2O3 and CaO and remaining weight % of AlN and impurity is oxidized in the atmosphere not exceeding the oxygen partial pressure: 10 -1 atmospheric pressure, steam pressure: 10 atmospheric pressure at the temperature of 1100-1500 deg.C, Y2O3 and CaO accelerate the oxidation to form a surface oxide film mainly composed of aluminum of aluminum oxide. Next, a surface coating layer composed of a ceramic in composition of TiO2: 10-65weight% and remaining weight % of SiO2 and an impurity is formed on the surface of the substrate in such a state. Through these procedures, an aluminum nitride group sintered substrate with surface coating layer in high adhesiveness and repeated thermal shock resistance can be formed.

2. 发明专利

JPH0254811A MANUFACTURE OF SUPERCONDUCTOR THIN FILM 失效
公开(公告)号：JPH0254811A
公开(公告)日：1990-02-23
申请号：JP20584388
申请日：1988-08-18
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C01G3/00 , C01G1/00 , C01G29/00 , H01B12/06 , H01B13/00
摘要： PURPOSE:To heighten critical current density of a superconductor thin film by making a plurality of raw material gas forming yttrium or bismuth ceramic superconductor to react in a vapor phase for forming an intermediate film followed by oxidizing the intermediate film. CONSTITUTION:Raw material gas of a plurality of raw materials for forming an yttrium ceramic superconductor or a bismuth ceramics superconductor is housed inside the coordinator containers 11, 12 and 13 for being fed to the raw material containers 1, 2 and 3 being carried by Ar as carrier gas. A substrate 9, to which an intermediate film for generating the superconductor is to be stuck, is set up inside a reaction chamber 5. A superconductor raw material inside the raw material containers 1, 2 and 3 is fed inside the reaction chamber 5 decompressed by a vacuum pump 7 under a heating condition by a heater 8 as metal complex gas carried by Ar gas so as to form the intermediate film on the substrate 9. Next, the substrate 9 is set up in an annealing furnace where the intermediate film is oxidized under a prescribed condition. As a result thereof, a dense superconductor thin film is formed thus to enable critical current density to be heightened.

3. 发明专利

JPH01308804A PRODUCTION OF FILMY SUPERCONDUCTOR 失效
公开(公告)号：JPH01308804A
公开(公告)日：1989-12-13
申请号：JP13974588
申请日：1988-06-06
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C04B41/87 , C01B13/20 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/40 , C23C16/44 , C23C16/448 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain the title superconductor through CVD process with enhanced film formation rate and improved productivity, by making one of plural raw materials into a ligand-contg. metal complex gas to enhance the vapor pressure of the raw material. CONSTITUTION:A vaporized ligand (e.g. hexafluoroacetylacetone) is put into each of containers 11, 12, 13, while plural kinds of raw materials (e.g. Ba compound, Y compound, Cu compound) are put into respective containers 1, 2, 3. Thence, the ligand in the containers 11, 12, 13 is transferred through a carrier gas (e.g. Ar) to the respective containers 1, 2, 3 followed by heating using respective heaters 8 to convert the raw materials in the containers 1, 2, 3 into ligand- contg. metal complex gases, respectively, which are then introduced into a reaction chamber 5. Simultaneously, oxygen 10 is also introduced into said chamber 5 followed by heating the resultant mixed gas using a heater 8 to cause chemical reaction, thus forming the objective filmy superconductor on a substrate 9.

4. 发明专利

JPH01308802A PRODUCTION OF FILMY SUPERCONDUCTOR AND DEVICE THEREFOR 失效
公开(公告)号：JPH01308802A
公开(公告)日：1989-12-13
申请号：JP13975188
申请日：1988-06-06
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C04B41/87 , C01B13/14 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/40 , H01B13/00
摘要： PURPOSE:To improve film-forming speed by vaporizing one raw material of superconductor among plural kind of raw materials in the presence of ligand to obtain a gas of metal complex and thus increasing vapor pressure of gas of raw material of superconductor, in production of filmy superconductor by CVD method. CONSTITUTION:Gaseous ligand (e.g., hexafluoroacetylacetone) is contained in ligand vessels 11, 12 and 13 and plural kind of raw materials of superconductor (e.g., Ba-compound, Y-compound and Cu-compound) are contained in raw material vessels 1, 2 and 3. Next, ligands in the ligand vessels 11, 12 and 13 are respectively transferred to the raw material vessels 1, 2 and 3 by carrier gas (e.g., Ar), heated by heater 8 and the raw materials of superconductor in the raw material vessel 1, 2 and 3 are vaporized to gas of metal complex in the presence of ligand, then introduced into a reaction chamber 5 and oxygen 10 is simultaneously introduced into the reaction chamber 5, heated by the heater 8 and chemical reaction is risen to form a filmy superconductor on a base plate 9.

5. 发明专利

JPS6462474A COMPOSITION FOR FORMING THIN FILM OF COMPOSITE METAL OXIDE 失效
公开(公告)号：JPS6462474A
公开(公告)日：1989-03-08
申请号：JP21651487
申请日：1987-09-01
申请人： MITSUBISHI METAL CORP
发明人： UCHIDA HIROTO , AMIJIMA MAKOTO
IPC分类号： C23C18/12 , C04B35/45 , C04B35/636 , H01L39/24
摘要： PURPOSE:To improve the strength and denseness of a thin film of composite metal oxide formed by using the undermentioned composition, by providing a composition prepared by dissolving alkoxide of rare-earth metal, alkoxide of alkaline-earth metal, and organic acid salt, etc., of copper in an organic solvent and then adding a film-forming substance to the above solution. CONSTITUTION:This composition for forming a thin film of composite metal oxide is formed of a raw material for forming a composite oxide of rare-earth metal, alkaline-earth metal, and copper, a film-forming substance, and an organic solvent. The above raw material contains alkoxide of rare-earth metal, alkoxide of alkaline-earth metal, and organic acid salt or organic complex of copper in the same stoichiometric proportion as the composition and metals of the desired composite oxide. The above composition is applied to a substrate and then baked, by which the thin film of composite metal oxide can be obtained.

6. 发明专利

JPH02106924A ANTIMONY DIFFUSING COMPOSITION 失效
公开(公告)号：JPH02106924A
公开(公告)日：1990-04-19
申请号：JP26109788
申请日：1988-10-17
申请人： MITSUBISHI METAL CORP
发明人： UCHIDA HIROTO , AKIYAMA KAZUHIRO , SOYAMA NOBUYUKI , YANAI TOSHIYUKI , MACHINO TAKESHI , SUGA FUKUHIKO
IPC分类号： H01L21/225
摘要： PURPOSE:To remarkably improve the conservative property of solution and to form a uniform film with satisfactory wettability of the solution by dissolving alkoxysilane hydrolysate and organic acid antimony compound containing a predetermined composition. CONSTITUTION:Alkoxysilane is represented by a formula (R'O)4-nSiR''n., where R' and R filtrate are alkyl, alkoxy, aryl, allyl, glycidyloxyalkyl, acryloxyalkyl, methacryloxyalkyl or vinyl group, and (n) is integer number of 0 or 1-3. As the composition, organic acid antimony compounds represented by formulae I-VII are employed, where n = integer number of 1-3, (m) is integer number of 1-5, and R, R' are 1-20C hydrocarbon groups. The organic acid antimony compounds are obtained by adding a predetermined quantity of organic acid or organic acid anhydride to trivalent or pentavalent alkoxy antimony compound to be reacted.

7. 发明专利

JPH0255219A PRODUCTION OF SUPERCONDUCTOR THIN FILM 失效
公开(公告)号：JPH0255219A
公开(公告)日：1990-02-23
申请号：JP20584588
申请日：1988-08-18
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C01G3/00 , C01G1/00 , C01G29/00 , C23C16/30 , H01B12/06 , H01B13/00
摘要： PURPOSE:To density the subject thin film and thence improve critical electric current density by feeding plural raw material gases of Y based or Bi based ceramic superconductor and a gas for controlling oxygen partial pressure to a substrate to form an intermediate membrane in unequilibrium state and oxidizing the formed membrane. CONSTITUTION:For example, a substrate 9 is installed in a reaction vessel 5 for CVD device and the inside of the vessel 5 si evacuated and simultaneously Ar which is a carrier gas is fed to ligand vessels 11-13 and a ligand gas in the vessels 11-13 is carried by Ar to feed the ligand gas to raw material vessels 1-3. Then a superconducting raw material in the vessels 1-3 is converted to a metal complex gas under heating conditions and the metal complex gas is carried by Ar to feed the complex gas to the vessel 5. When the complex gas is fed, H2 gas is fed to the vessel 5 in the prescribed amount and a superconducting substance is deposited on the substrate 9 to afford an intermediate membrane. The intermediate membrane is chemically kept to unequilibrium state as a superconductor and dense. Therefore, the intermediate membrane is then oxidized to provide the dense superconductor thin film.

8. 发明专利

JPH01308809A PRODUCTION OF FILMY SUPERCONDUCTOR 失效
公开(公告)号：JPH01308809A
公开(公告)日：1989-12-13
申请号：JP13975088
申请日：1988-06-06
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C01B13/20 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/40 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain the title superconductor through CVD process with enhanced film formation rate and reduced reaction temperature, also causing no contamination with the carbon in the ligand, by making raw materials into ligand-contg. metal complex gases respectively and carrying out reactions in the presence of both water vapor and oxygen under ultraviolet irradiation. CONSTITUTION:A vaporized ligand (e.g. hexafluoroacetylacetone) is put into each of containers 11, 12, 13, while plural kinds of raw materials (e.g. Ba compound, Y compound, Cu compound) are put into respective containers 1, 2, 3. Thence, the ligand in the containers 11, 12, 13 is transferred through a carrier gas (e.g. Ar) to the respective containers 1, 2, 3 followed by heating using respective heaters 8 to convert the raw materials into ligand-contg. metal complex gases, respectively, which are then introduced into a reaction chamber 5. Simultaneously, water vapor-contg. oxygen 10 is also introduced into said chamber 5 followed by heating the resultant mixed gas using a heater 8 under ultraviolet irradiation to cause reactions, thus forming the objective filmy superconductor on a substrate 9.

9. 发明专利

JPH01308806A PRODUCTION OF FILMY SUPERCONDUCTOR 失效
公开(公告)号：JPH01308806A
公开(公告)日：1989-12-13
申请号：JP13974788
申请日：1988-06-06
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C04B41/87 , C01B13/20 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/40
摘要： PURPOSE:To obtain the title superconductor through CVD process with enhanced film formation rate and improved critical temperature and mechanical strength, by making raw materials into metal complex gases and also mixing a fluorine source gas. CONSTITUTION:A vaporized ligand (e.g. hexafluoroacetylacetone) is put into each of containers 11, 12, 13, while plural kinds of raw materials (e.g. Ba compound, Y compound, Cu compound) are put into respective containers 1, 2, 3. Thence, the ligand in the containers 11, 12, 13 is transferred through a carrier gas (e.g. Ar) to the respective containers 1, 2, 3 followed by heating using respective heaters 8 to convert the raw materials in the containers 1, 2, 3 into metal complex gases, respectively, which are then introduced into a reaction chamber 5. Simultaneously, oxygen 10 and a fluorine source gas 15 are also introduced into said chamber 5 followed by heating the resultant mixed gas using a heater 8 to cause chemical reactions, thus forming the objective filmy superconductor on a substrate 9.

10. 发明专利

JPH01308805A PRODUCTION OF FILMY SUPERCONDUCTOR 失效
公开(公告)号：JPH01308805A
公开(公告)日：1989-12-13
申请号：JP13974688
申请日：1988-06-06
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C04B41/87 , C01B13/20 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/40 , C23C16/44 , C23C16/448 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain the title superconductor through CVD process with enhanced film formation rate and to enable metal complex raw material(s) sensitive to oxygen gas to be used, by making raw materials into ligand-contg. metal complex gases and introducing oxygen gas separately. CONSTITUTION:A vaporized ligand (e.g. hexafluoroacetylacetone) is put into each of containers 11, 12, 13, while plural kinds of raw materials (e.g. Ba compound, Y compound, Cu compound) are put into respective containers 1, 2, 3. Thence, the ligand in the containers 11, 12, 13 is transferred, through a carrier gas (e.g. Ar), to the respective containers 1, 2, 3 followed by heating using respective heaters 8 to convert the raw materials in the containers 1, 2, 3 into ligand-contg. metal complex gases, respectively, which are then introduced into a reaction chamber 5. Simultaneously, oxygen 10 is also introduced into sand chamber 5 separately, followed by heating the resultant mixed gas using a heater 8 to cause chemical reactions, thus forming the objective filmy superconductor on a substrate 9.

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