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1. 发明申请

WO2010068542A1 METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES 审中-公开
标题翻译：在最小化现有结构影响下生长硅氧化物薄膜的方法和装置
公开(公告)号：WO2010068542A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/066482
申请日：2009-12-03
申请人： MATTSON TECHNOLOGY, INC. , PEUSE, Bruce, W. , HU, Yao, Zhi , TIMANS, Paul, Janis , XING, Guangcai , LERCH, Wilfried , TAY, Sing-Pin , SAVAS, Stephen, E. , ROTERS, Georg , NENYEI, Zsolt , SINHA, Ashok
发明人： PEUSE, Bruce, W. , HU, Yao, Zhi , TIMANS, Paul, Janis , XING, Guangcai , LERCH, Wilfried , TAY, Sing-Pin , SAVAS, Stephen, E. , ROTERS, Georg , NENYEI, Zsolt , SINHA, Ashok
IPC分类号： H01L21/316
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

2. 发明申请

WO2008124477A1 METHOD AND SYSTEM FOR THERMALLY PROCESSING A PLURALITY OF WAFER-SHAPED OBJECTS 审中-公开
标题翻译：用于热处理多晶圆形物体的方法和系统
公开(公告)号：WO2008124477A1
公开(公告)日：2008-10-16
申请号：PCT/US2008/059228
申请日：2008-04-03
申请人： MATTSON TECHNOLOGY, INC. , NENYEI, Zsolt , TIMANS, Paul, Janis , LERCH, Wilfried , NIESS, Juergen , FALTER, Manfred , O'CARROLL, Conor, Patrick , CARDEMA, Rudy , FIDELMAN, Igor , TAY, Sing-Pin , HU, Yao Zhi , DEVINE, Daniel, J. , SCHMID, Patrick
发明人： NENYEI, Zsolt , TIMANS, Paul, Janis , LERCH, Wilfried , NIESS, Juergen , FALTER, Manfred , O'CARROLL, Conor, Patrick , CARDEMA, Rudy , FIDELMAN, Igor , TAY, Sing-Pin , HU, Yao Zhi , DEVINE, Daniel, J. , SCHMID, Patrick
IPC分类号： H01L21/324
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

3. 发明申请

WO2008020403A2 METHOD FOR IMPROVING INTERFACE REACTIONS AT SEMICONDUCTOR SURFACES 审中-公开
标题翻译：用于改善半导体表面的界面反应的方法
公开(公告)号：WO2008020403A2
公开(公告)日：2008-02-21
申请号：PCT/IB2007/053240
申请日：2007-08-14
申请人： MATTSON TECHNOLOGY, INC. , NENYEI, Zsolt , THEILER, Thomas , ROTERS, Georg , MEYER, Hans-Joachim
发明人： NENYEI, Zsolt , THEILER, Thomas , ROTERS, Georg , MEYER, Hans-Joachim
CPC分类号： H01L21/3185 , C23C8/02 , C23C8/24 , H01L21/28202 , H01L21/28282 , H01L21/3003 , H01L21/3144
摘要： The present invention describes a method for producing ultra-thin thermally stoichiometric or almost stoichiometric nitrides on semiconductor wafers. The method according to the invention includes the H+- or D+-passivation of the free semiconductor surface, followed by nitriding either in an RTP system, an oven or in plasma. Compounds containing deuterium are preferred in all of the method steps of the invention in order to passivate the interface layer between the silicon surface and the dielectric.
摘要翻译：本发明描述了一种在半导体晶片上制造超薄热化学计量或几乎化学计量的氮化物的方法。根据本发明的方法包括自由半导体表面的H +或D + - 钝化，然后在RTP系统，烘箱或等离子体中氮化。为了钝化硅表面和电介质之间的界面层，本发明的所有方法步骤都优选含有氘的化合物。

4. 发明申请

WO2004027851A2 METHOD OF FORMING AND/OR MODIFYING A DIELECTRIC FILM ON A SEMICONDUCTOR SURFACE 审中-公开
标题翻译：在半导体表面上形成和/或修饰电介质膜的方法
公开(公告)号：WO2004027851A2
公开(公告)日：2004-04-01
申请号：PCT/US2003/027682
申请日：2003-09-02
申请人： MATTSON TECHNOLOGY, INC. , EISELE, Ignaz , LUDSTECK, Alexandra , SCHULZE, Jorg , NENYEI, Zsolt , DIETL, Waltraud , ROTERS, Georg
发明人： EISELE, Ignaz , LUDSTECK, Alexandra , SCHULZE, Jorg , NENYEI, Zsolt , DIETL, Waltraud , ROTERS, Georg
IPC分类号： H01L21/316
CPC分类号： H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02227 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02255 , H01L21/02312 , H01L21/02326 , H01L21/02337 , H01L21/3144 , H01L21/31662
摘要： A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.
摘要翻译：公开了一种用于在半导体衬底上形成和/或修饰电介质膜的工艺。根据本发明，半导体晶片暴露于含有反应成分的工艺气体中。选择加热半导体晶片的温度和反应性组分的分压，使得在该过程的某个时间，反应组分的扩散通过电介质膜发生到膜/半导体衬底界面。此外，通过电介质膜的半导体原子也发生到膜的外表面的扩散。已经发现本发明的方法非常适合于形成和/或改性非常薄的电介质膜，例如厚度小于8nm的膜。

5. 发明申请

WO2010015385A1 VORRICHTUNG UND VERFAHREN ZUR ERZEUGUNG DIELEKTRISCHER SCHICHTEN IM MIKROWELLENPLASMA 审中-公开
标题翻译：装置及方法微波等离子生成的电介质层
公开(公告)号：WO2010015385A1
公开(公告)日：2010-02-11
申请号：PCT/EP2009/005644
申请日：2009-08-04
申请人： GSCHWANDTNER, Alexander , LERCH, Wilfried , NENYEI, Zsolt , THEILER, Thomas
发明人： LERCH, Wilfried , NENYEI, Zsolt , THEILER, Thomas
IPC分类号： H01J37/32 , C23C16/511
CPC分类号： H01J37/32211 , C23C8/36 , H01J37/32192 , H01J2237/2001
摘要： Vorrichtung zum Erzeugen eines Mikrowellenplasmas, sowie eine Vorrichtung und ein Verfahren zum Behandeln von Halbleitersubstraten mit einem Mikrowellenplasma, wobei die Mikrowellenplasmavorrichtung, wenigstens eine Elektrode (21, 22, 23) umfaßt, eine Elektrode (21, 22, 23) einen koaxialen Innenleiter (21) aus elektrisch leitendem Material, sowie einen diesen zumindest teilweise umgebenden und von ihm beabstandeten koaxialen Außenleiter (22) aus elektrisch leitendem Material aufweist, sowie eine Plasmazündvorrichtung (23), die mit dem koaxialen Innenleiter (21) verbunden ist, dadurch gekennzeichnet, daß der koaxiale Außenleiter (22) wenigstens einen ersten Teilbereich (31) aufweist, in welchem er den koaxialen Innenleiter (21) entlang dessen Längsachse vollständig umschließt, und wenigstens einen weiteren Teilbereich (32) aufweist, in welchem er den koaxialen Innenleiter (21) teilweise so umschließt, daß eine vom Mikrowellengenerator (20) erzeugte Mikrowellenstrahlung in dem wenigstens einen weiteren Teilbereich (32) im Wesentlichen senkrecht zur Längsachse des koaxialen Innenleiters (21) austreten kann.
摘要翻译：装置，用于产生微波等离子体，以及用于与微波等离子体，微波等离子体装置中，至少一个电极（21，22，23）的处理半导体基板的设备和方法，包括一个电极（21，22，23）具有同轴的内导体（21 ）导电材料，以及所述至少部分地包围和由导电材料的它同轴外导体（22），其具有，以及等离子体点火（23）（与同轴中心导体21）连接间隔开，其特征在于，所述同轴外导体（22）的至少第一部分（31），其中，它完全包围沿其纵向轴线同轴的内导体（21），和至少一个另外的部分区域（32），其中他的同轴内导体（21）部分地这样涵盖一个由微波发生器（20），以微波辐射在所生成的至少一个另外的部分区域（32）可以垂直于同轴内导体（21）的纵向轴线基本上出现。

6. 发明申请

WO2006015620A1 METHOD FOR THE THERMAL TREATMENT OF DISK-SHAPED SUBSTRATES 审中-公开
标题翻译：盘形基板热处理方法
公开(公告)号：WO2006015620A1
公开(公告)日：2006-02-16
申请号：PCT/EP2004/012181
申请日：2004-10-28
申请人： MATTSON THERMAL PRODUCTS GMBH , NENYEI, Zsolt , FRIGGE, Steffen , SCHMID, Patrick , HÜLSMANN, Thorsten , THEILER, Thomas
发明人： NENYEI, Zsolt , FRIGGE, Steffen , SCHMID, Patrick , HÜLSMANN, Thorsten , THEILER, Thomas
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , F27B5/04 , F27B17/0025 , H01L21/67115
摘要： For the purposes of reducing the number of particles on substrates and especially on semiconductor wafers which are being thermally treated, there is provided a method for the thermal treatment of the substrate in at least one process chamber, wherein the substrate is heated in a first process step to a temperature which is greater than that of the immediate environment whilst being kept static, and wherein the substrate continues to be heated in a second process step and is additionally set in motion. Furthermore, it is possible for a gas not to be introduced into the process chamber during the first process step, whereas a gas is introduced in the second process step.
摘要翻译：为了减少基板上，特别是在被热处理的半导体晶片上的颗粒数量，提供了一种用于在至少一个处理室中对基板进行热处理的方法，其中基板在第一工艺中被加热在保持静止的情况下步进到大于直接环境的温度，并且其中基板在第二工艺步骤中继续被加热并且另外设置成运动。此外，在第一工艺步骤期间，不能将气体引入处理室，而在第二工艺步骤中引入气体。

7. 发明申请

WO2005027215A2 A PROCESS FOR THE PRODUCTION OF A NITROGENOUS LAYER ON A SEMICONDUCTOR OR METAL SURFACE 审中-公开
标题翻译：在半导体或金属表面上制造氮层的方法
公开(公告)号：WO2005027215A2
公开(公告)日：2005-03-24
申请号：PCT/EP2004/009512
申请日：2004-08-26
申请人： MATTSON THERMAL PRODUCTS GMBH , NENYEI, Zsolt , CHUNG, Hin, Yiu
发明人： NENYEI, Zsolt , CHUNG, Hin, Yiu
IPC分类号： H01L21/318
CPC分类号： H01L21/3185 , C25D9/06 , C25D11/08 , C25D11/18 , C25D11/26 , C25D11/32
摘要： A first process for the production of a thin nitrogenous layer on a semiconductor surface by contacting at least a part of the surface with a nitrogenous liquid, by applying an electrical voltage between the surface, the liquid and an electrode according to a given voltage-time curve until a layer thickness of less than 5 nm is formed, and then separating the surface from the liquid. A second process for the production of a thin nitrogenous layer on a metal surface or on a metal layer located on a substrate by contacting at least a part of the surface or the metal layer with a nitrogenous liquid, by applying an electrical voltage between the surface or metal layer, the liquid and an electrode according to a given voltage-time curve until a layer thickness of less than 50 nm is formed, and then separating the surface or the metal layer from the liquid. A third process for detaching an oxygen-containing and/or nitrogenous layer on a semiconductor or a metal surface.
摘要翻译：通过在表面，液体和液体之间施加电压来使至少一部分表面与含氮液体接触，从而在半导体表面上生产薄含氮层的第一种方法，根据给定的电压 - 时间曲线，直至形成小于5nm的层厚度，然后将表面与液体分离。通过将表面或金属层的至少一部分与含氮液体接触，通过在表面或表面之间施加电压来在金属表面上或位于基底上的金属层上产生薄含氮层的第二种方法，或金属层，根据给定的电压 - 时间曲线将液体和电极形成，直到形成小于50nm的层厚度，然后从液体分离表面或金属层。用于分离半导体或金属表面上的含氧和/或含氮层的第三种方法。

8. 发明公开

EP1540718A2 METHOD OF FORMING AND/OR MODIFYING A DIELECTRIC FILM ON A SEMICONDUCTOR SURFACE 审中-公开
标题翻译：方法在半导体表面上的生产和/或修改一个介电薄膜的
公开(公告)号：EP1540718A2
公开(公告)日：2005-06-15
申请号：EP03797880.6
申请日：2003-09-02
申请人： Mattson Technology, Inc.
发明人： EISELE, Ignaz , LUDSTECK, Alexandra , SCHULZE, Jorg , NENYEI, Zsolt , DIETL, Waltraud , ROTERS, Georg
IPC分类号： H01L21/316 , H01L21/28
CPC分类号： H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02227 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02255 , H01L21/02312 , H01L21/02326 , H01L21/02337 , H01L21/3144 , H01L21/31662
摘要： A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.

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