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1. 发明申请

WO2006130573A3 OPTIMIZING THE THERMAL BUDGET DURING A PULSED HEATING PROCESS 审中-公开
标题翻译：在脉冲加热过程中优化热预算
公开(公告)号：WO2006130573A3
公开(公告)日：2009-04-23
申请号：PCT/US2006020813
申请日：2006-05-30
申请人： MATTSON TECH INC , TIMANS PAUL JANIS
发明人： TIMANS PAUL JANIS
IPC分类号： F27B5/14
CPC分类号： H01L21/67115 , F27B5/04 , F27B17/0025 , H01L21/67109
摘要： An approach for optimizing the thermal budget during a pulsed heating process is disclosed A heat sink or thermal transfer plate (20) is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment The heat sink is configured to enhance the thermal transfer rate from the object ( 16) so that the object ( 16) is rapidly brought down from the peak temperature after an energy pulse High thermally-conductive material may be positioned between the plate (20) and the object ( 16) The plate (20) may include protrusions, pbs(26), holes, recesses(24), and other discontinuities to enhance heat transfer and avoid physical damage to the object(16) during thermal cycle Additionally, the optical properties of the plate (20) may be selected to allow for temperature measurements via energy measurements from the plate (20), or to provide for a different thermal response to the energy pulse The plat (20) may also allow for pre-heating or active cooling of the wafer
摘要翻译：公开了一种用于在脉冲加热过程中优化热预算的方法。散热器或热传递板（20）被配置和定位在经历热处理的物体（例如半导体晶片）附近。散热器被配置为增强热从物体（16）的传送速率，使得物体（16）在能量脉冲之后从峰值温度迅速降低高导热材料可以位于板（20）和物体（16）之间。板（ 20）可以包括突起，pbs（26），孔，凹槽（24）和其它不连续性，以增强热传递并避免在热循环期间对物体（16）的物理损伤。另外，板（20）的光学性质可以被选择为允许通过来自板（20）的能量测量的温度测量，或者为能量脉冲提供不同的热响应。平台（20）还可以允许预热或主动冷却焊盘呃

2. 发明申请

WO2010068542A1 METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES 审中-公开
标题翻译：在最小化现有结构影响下生长硅氧化物薄膜的方法和装置
公开(公告)号：WO2010068542A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/066482
申请日：2009-12-03
申请人： MATTSON TECHNOLOGY, INC. , PEUSE, Bruce, W. , HU, Yao, Zhi , TIMANS, Paul, Janis , XING, Guangcai , LERCH, Wilfried , TAY, Sing-Pin , SAVAS, Stephen, E. , ROTERS, Georg , NENYEI, Zsolt , SINHA, Ashok
发明人： PEUSE, Bruce, W. , HU, Yao, Zhi , TIMANS, Paul, Janis , XING, Guangcai , LERCH, Wilfried , TAY, Sing-Pin , SAVAS, Stephen, E. , ROTERS, Georg , NENYEI, Zsolt , SINHA, Ashok
IPC分类号： H01L21/316
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

3. 发明申请

WO2008003080A3 METHODS FOR DETERMINING WAFER TEMPERATURE 审中-公开
公开(公告)号：WO2008003080A3
公开(公告)日：2008-01-03
申请号：PCT/US2007/072488
申请日：2007-06-29
申请人： MATTSON TECHNOLOGY, INC. , TIMANS, Paul Janis
发明人： TIMANS, Paul Janis
IPC分类号： H01L21/66
摘要： Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.

4. 发明申请

WO2006130573A2 OPTIMIZING THE THERMAL BUDGET DURING A PULSED HEATING PROCESS 审中-公开
标题翻译：在脉冲加热过程中优化热预算
公开(公告)号：WO2006130573A2
公开(公告)日：2006-12-07
申请号：PCT/US2006/020813
申请日：2006-05-30
申请人： MATTSON TECHNOLOGY, INC. , TIMANS, Paul Janis
发明人： TIMANS, Paul Janis
CPC分类号： H01L21/67115 , F27B5/04 , F27B17/0025 , H01L21/67109
摘要： An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.
摘要翻译：公开了一种在脉冲加热过程中优化热预算的方法。散热器或热转印板被配置和定位在经受热处理的诸如半导体晶片的物体附近。散热器被配置为增强从物体的热传递速率，使得物体在能量脉冲之后迅速从峰值温度降低。高导热材料可以位于板和物体之间。板可以包括突起，肋，孔，凹槽和其他不连续性，以增强热传递，并避免在热循环期间对物体的物理损伤。此外，可以选择板的光学性质以允许通过来自板的能量测量进行温度测量，或者为能量脉冲提供不同的热响应。该板还可以允许晶片的预热或主动冷却。

5. 发明申请

WO2008003080A2 METHODS FOR DETERMINING WAFER TEMPERATURE 审中-公开
标题翻译：测定温度的方法
公开(公告)号：WO2008003080A2
公开(公告)日：2008-01-03
申请号：PCT/US2007072488
申请日：2007-06-29
申请人： MATTSON TECH INC , TIMANS PAUL JANIS
发明人： TIMANS PAUL JANIS
IPC分类号： G01K19/00
CPC分类号： G01K15/00 , G01J5/0007 , G01J5/0806 , G01J5/0831 , G01J5/0846 , G01K11/125
摘要： Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.
摘要翻译：用于晶片温度测量和温度测量装置的校准的方法和装置可以基于确定半导体晶片中的层的吸收。可以通过将光引向晶片并且从入射光入射的表面下方测量从晶片反射的光来确定吸收。校准晶片和测量系统可以被布置和配置，以便测量以预定角度反射到晶片表面的光，而不是其他光。测量也可以基于评估晶片中或晶片上的图案的图像中的对比度。其他测量可以利用基于反射或透射光的温度确定旁边的晶片内的光程长度的确定。

6. 发明申请

WO2007005489A3 METHOD AND SYSTEM FOR DETERMINING OPTICAL PROPERTIES OF SEMICONDUCTOR WAFERS 审中-公开
公开(公告)号：WO2007005489A3
公开(公告)日：2007-01-11
申请号：PCT/US2006/025288
申请日：2006-06-29
申请人： MATTSON TECHNOLOGY, INC. , TIMANS, Paul Janis
发明人： TIMANS, Paul Janis
IPC分类号： G01J5/00
摘要： A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.

7. 发明申请

WO2008124477A1 METHOD AND SYSTEM FOR THERMALLY PROCESSING A PLURALITY OF WAFER-SHAPED OBJECTS 审中-公开
标题翻译：用于热处理多晶圆形物体的方法和系统
公开(公告)号：WO2008124477A1
公开(公告)日：2008-10-16
申请号：PCT/US2008/059228
申请日：2008-04-03
申请人： MATTSON TECHNOLOGY, INC. , NENYEI, Zsolt , TIMANS, Paul, Janis , LERCH, Wilfried , NIESS, Juergen , FALTER, Manfred , O'CARROLL, Conor, Patrick , CARDEMA, Rudy , FIDELMAN, Igor , TAY, Sing-Pin , HU, Yao Zhi , DEVINE, Daniel, J. , SCHMID, Patrick
发明人： NENYEI, Zsolt , TIMANS, Paul, Janis , LERCH, Wilfried , NIESS, Juergen , FALTER, Manfred , O'CARROLL, Conor, Patrick , CARDEMA, Rudy , FIDELMAN, Igor , TAY, Sing-Pin , HU, Yao Zhi , DEVINE, Daniel, J. , SCHMID, Patrick
IPC分类号： H01L21/324
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

8. 发明申请

WO2007005489A2 METHOD AND SYSTEM FOR DETERMINING OPTICAL PROPERTIES OF SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于确定半导体波导的光学性质的方法和系统
公开(公告)号：WO2007005489A2
公开(公告)日：2007-01-11
申请号：PCT/US2006025288
申请日：2006-06-29
申请人： MATTSON TECH INC , TIMANS PAUL JANIS
发明人： TIMANS PAUL JANIS
IPC分类号： H01L21/66
CPC分类号： H01L21/67115 , G01J5/0003 , G01N21/55 , H01L21/67248 , H01L22/24
摘要： A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.
摘要翻译：公开了一种用于确定诸如半导体晶片的衬底的至少一种光学特性的方法和系统。一旦确定了光学特性，则可以控制处理室中的至少一个参数以改善处理。例如，在一个实施例中，可以首先在环境温度或接近环境温度下确定衬底的一个表面的反射率。根据该信息，可以准确地估计在高温处理期间晶片的反射率和/或发射率。在晶片处理过程中，发射率可用于使用高温计校正温度测量。除了进行更准确的温度测量之外，基板的光学特性也可用于更好地优化加热循环。

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