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1. 发明专利

TW200504795A 電漿均勻度 PLASMA UNIFORMITY 审中-公开
简体标题：等离子均匀度 PLASMA UNIFORMITY
公开(公告)号：TW200504795A
公开(公告)日：2005-02-01
申请号：TW093108483
申请日：2004-03-29
申请人：芮內喬治 GEORGE, RENE , 史蒂芬E. 沙維斯 SAVAS, STEPHEN E. , 安卓斯卡達瓦尼錫 KADAVANICH, ANDREAS , 約翰贊捷克 ZAJAC, JOHN , 丹尼爾J. 迪外 DEVINE, DANIEL J. , 杉弘勤 SHAN, HONGQING
发明人：芮內喬治 GEORGE, RENE , 史蒂芬E. 沙維斯 SAVAS, STEPHEN E. , 安卓斯卡達瓦尼錫 KADAVANICH, ANDREAS , 約翰贊捷克 ZAJAC, JOHN , 丹尼爾J. 迪外 DEVINE, DANIEL J. , 杉弘勤 SHAN, HONGQING
IPC分类号： H01L
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32431 , H01L21/02104 , H01L21/3065 , H01L21/6715 , H05H1/46
摘要：一種可更均勻加工待處理物之電漿製程，該製程所使用之感應式耦合電漿源因細縫式靜電鞘上的細縫為均勻分佈，故產生非對稱性之電漿密度圖案。改良後之細縫式靜電鞘可對該非對稱性電漿密度圖案加以補償，在待處理物表面上可形成改良後之電漿密度圖案。一種徑向均勻度更高的加工製程，以一靜電鞘配置取代己知的靜電鞘，可在待處理物表面上產生改良後的徑向變化特徵。該感應式耦合電漿源係含有一對稱軸，該靜電鞘配置之形狀延伸到該對稱軸的整個半徑範圍。
简体摘要：一种可更均匀加工待处理物之等离子制程，该制程所使用之感应式耦合等离子源因细缝式静电鞘上的细缝为均匀分布，故产生非对称性之等离子密度图案。改良后之细缝式静电鞘可对该非对称性等离子密度图案加以补偿，在待处理物表面上可形成改良后之等离子密度图案。一种径向均匀度更高的加工制程，以一静电鞘配置取代己知的静电鞘，可在待处理物表面上产生改良后的径向变化特征。该感应式耦合等离子源系含有一对称轴，该静电鞘配置之形状延伸到该对称轴的整个半径范围。

2. 发明公开

EP0507885A1 A LOW FREQUENCY INDUCTIVE RF PLASMA REACTOR 失效
标题翻译：感应等离子体反应器在较低的高频范围。
公开(公告)号：EP0507885A1
公开(公告)日：1992-10-14
申请号：EP91904021.0
申请日：1991-01-02
申请人： SAVAS, Stephen, E.
发明人： SAVAS, Stephen, E.
IPC分类号： C23F4 , H01J37 , H01L21 , H05H1
CPC分类号： H01J37/321 , H01J37/32706
摘要： Réacteur à plasma à puissance hf (43) couplé de manière inductive dans la chambre (50) du réacteur, afin de produire un champ magnétique hf perpendiculaire à un piédestal sur lequel une tranche est placée pour être traitée. Le piédestal est une électrode alimentée en puissance, à laquelle une puissance (51) est couplée afin de commander la tension de la cuirasse du piédestal. Ce réacteur est particulièrement adapté à des gravures tendres et à des procédés dans lesquels il est avantageux de coupler beaucoup plus de puissance dans la production d'ions que dans la production de radicaux libres. Des cages de Faraday (46) ainsi qu'une source de champs magnétiques (53 à 55) contribuent à contenir la puissance dans la chambre.

3. 发明申请

WO2009018044A3 ADVANCED MULTI-WORKPIECE PROCESSING CHAMBER 审中-公开
标题翻译：先进的多工件加工室
公开(公告)号：WO2009018044A3
公开(公告)日：2009-09-24
申请号：PCT/US2008070855
申请日：2008-07-23
申请人： MATTSON TECH INC , DEVINE DANIEL J , CRAPUCHETTES CHARLES , DESAI DIXIT , GEORGE RENE , LEE VINCENT C , MATSUDA YUVA , MOHN JONATHAN , PAKULSKI RYAN M , SAVAS STEPHEN E , ZUCKER MARTIN
发明人： DEVINE DANIEL J , CRAPUCHETTES CHARLES , DESAI DIXIT , GEORGE RENE , LEE VINCENT C , MATSUDA YUVA , MOHN JONATHAN , PAKULSKI RYAN M , SAVAS STEPHEN E , ZUCKER MARTIN
IPC分类号： H01L21/00
CPC分类号： H01L21/6719 , H01L21/67069 , Y10T29/49
摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.
摘要翻译：描述了用于在处理过程中处理工件的设备和方法。多晶片腔室限定腔室内部，腔室内部包括腔室内部内的至少两个处理站，使得处理站共享腔室内部。每个处理站包括等离子体源和工件基座，用于使用相应的等离子体源将工件中的一个暴露于处理工艺。腔室包括一个或多个导电表面的布置，所述导电表面在每个加工站处以不对称的方式设置在工件周围，其方式为在每个工件的主表面上产生处理过程的给定水平的均匀性。屏蔽装置提供了工件暴露于等离子体源中的相应一个的增强的均匀性，该均匀性大于在不存在屏蔽装置的情况下将提供的给定的均匀性水平。

4. 发明申请

WO2004082857A1 SYSTEMS AND METHODS FOR CLEANING SEMICONDUCTOR SUBSTRATES USING A REDUCED VOLUME OF LIQUID 审中-公开
标题翻译：使用减少液体体积清洗半导体基板的系统和方法
公开(公告)号：WO2004082857A1
公开(公告)日：2004-09-30
申请号：PCT/US2003/007743
申请日：2003-03-12
申请人： MATTSON TECHNOLOGY INC. , SAVAS, Stephen, E. , ZAJAC, John , GALEWSKI, Carl, A.
发明人： SAVAS, Stephen, E. , ZAJAC, John , GALEWSKI, Carl, A.
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , B08B3/02
摘要： Embodiments of the present invention are directed toward cleaning semiconductor substrates by dividing a processing chamber into a high-pressure compartment and a low-pressure compartment using a baffle. The baffle may include a pattern of nozzles that provide a flow path between the high pressure compartment and the low pressure compartment and that maintain the two compartments at substantially different pressures. A ratable substrate support is positioned within the low pressure compartment, and an inlet port injects a cleaning mist and a carrier gas into the high pressure compartment. The pressure differential between the two compartments accelerates the droplets from the cleaning mist through the nozzles of the baffle into the low pressure compartment toward the substrate, where a portion of the cleaning mist impacts on the surface of the substrate to form a liquid film or to eject elements of the surface film on the wafer. The substrate support is configured to rotate the substrate such that the liquid film flows radially across the substrate. There may be an independent source of vapor of the same or different type as the mist which is introduced into the low pressure region and provides for liquid condensation on the wafer. This helps replace the liquid lost by splashing or centrifugal flow off the wafer edge. Waste products from micro features on the substrate diffuse into the liquid film, where portions of the liquid film and diffused waste products are eventually radially propelled off the edge of the substrate to be collected as waste or splashed off. Embodiments of the present invention are capable of cleaning a substrate with a significantly reduced volume of liquid relative to a conventional liquid bath.
摘要翻译：本发明的实施例涉及通过将处理室分成高压室和使用挡板的低压隔室来清洁半导体衬底。挡板可以包括喷嘴的图案，其提供高压隔室和低压隔室之间的流动路径，并且将两个隔间保持在基本上不同的压力。可压缩的基板支撑件位于低压隔室内，并且入口端口将清洁雾和载气注入高压隔室中。两个隔室之间的压力差使得从清洁雾通过挡板的喷嘴将液滴加速到朝向基板的低压室中，其中一部分清洁薄雾冲击基板的表面以形成液膜或者排出晶片上的表面膜的元件。衬底支撑件被配置为旋转衬底，使得液体膜径向流过衬底。可以存在与引入低压区域并在晶片上提供液体冷凝的雾相同或不同类型的独立蒸气源。这有助于更换从晶片边缘溅出或离心流失的液体。基板上的微观特征的废品会扩散到液膜中，其中液膜和扩散废物的部分最终从衬底的边缘径向推出，以作为废物或溅出而被收集。本发明的实施例能够相对于常规的液体浴来清洗具有显着减少的液体体积的基底。

5. 发明申请

WO1991010341A1 A LOW FREQUENCY INDUCTIVE RF PLASMA REACTOR 审中-公开
标题翻译：低频电感RF等离子体反应器
公开(公告)号：WO1991010341A1
公开(公告)日：1991-07-11
申请号：PCT/US1991000001
申请日：1991-01-02
申请人： SAVAS, Stephen, E.
IPC分类号： H05H01/24
CPC分类号： H01J37/321 , H01J37/32706
摘要： A plasma reactor with rf power (43) inductively coupled into the reactor chamber (50) to produce an rf magnetic field substantially perpendicular to a pedestal on which a wafer is placed for processing. The pedestal is a powered electrode (52) to which power (51) is coupled to control the sheath voltage of the pedestal. This reactor is particularly suitable for soft etches and processes in which it is advantageous to couple much more power into ion production than into free radical production. Faraday shields (46) and a magnetic field source (53-55) help contain the power in the chamber.
摘要翻译：具有电感耦合到反应器室（50）中的rf功率（43）的等离子体反应器，以产生基本上垂直于其上放置晶片的基座的rf磁场用于处理。基座是供电电极（52），功率（51）耦合到该电源电极以控制基座的护套电压。该反应器特别适用于柔软的蚀刻和工艺，其中与将自由基生成相比，将更多的功率与离子生产相结合是有利的。法拉第屏蔽（46）和磁场源（53-55）有助于容纳腔室中的电源。

6. 发明申请

WO2009018044A2 ADVANCED MULTI-WORKPIECE PROCESSING CHAMBER 审中-公开
标题翻译：先进的多功能加工室
公开(公告)号：WO2009018044A2
公开(公告)日：2009-02-05
申请号：PCT/US2008/070855
申请日：2008-07-23
申请人： MATTSON TECHNOLOGY, INC. , DEVINE, Daniel, J. , CRAPUCHETTES, Charles , DESAI, Dixit , GEORGE, Rene , LEE, Vincent, C. , MATSUDA, Yuva , MOHN, Jonathan , PAKULSKI, Ryan, M. , SAVAS, Stephen E. , ZUCKER, Martin
发明人： DEVINE, Daniel, J. , CRAPUCHETTES, Charles , DESAI, Dixit , GEORGE, Rene , LEE, Vincent, C. , MATSUDA, Yuva , MOHN, Jonathan , PAKULSKI, Ryan, M. , SAVAS, Stephen E. , ZUCKER, Martin
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/6719 , H01L21/67069 , Y10T29/49
摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.
摘要翻译：描述了用于在处理过程中处理工件的装置和方法。多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。

7. 发明申请

WO2005072211A3 SYSTEM AND METHOD FOR REMOVAL OF PHOTORESIST AND RESIDUES FOLLOWING CONTACT ETCH WITH A STOP LAYER PRESENT 审中-公开
公开(公告)号：WO2005072211A3
公开(公告)日：2005-08-11
申请号：PCT/US2005/001693
申请日：2005-01-19
申请人： MATTSON TECHNOLOGY, INC. , SAVAS, Stephen, E. , HELLE, Wolfgang
发明人： SAVAS, Stephen, E. , HELLE, Wolfgang
IPC分类号： H01L21/311 , H01L21/302
摘要： In processing an integrated circuit structure including a contact arrangement that is initially covered by a stop layer, a first plasma is used to etch to form openings through an overall insulation layer covered by a patterned layer of photoresist such that one contact opening is associated with each contact. Stripping of the patterned layer of photoresist and related residues is performed. After stripping, the stop layer is removed from the contacts. In one feature, the stop layer is removed from the contacts by etching the stop layer using a plasma that is generated from a plasma gas input that includes hydrogen and essentially no oxygen. In another feature, the photoresist is stripped after the stop layer is removed. Stripping the patterned layer of photoresist and the related residues is performed, in this case, using a plasma that is formed predominantly including hydrogen without oxygen.

8. 发明申请

WO2005072211A2 SYSTEM AND METHOD FOR REMOVAL OF PHOTORESIST AND RESIDUES FOLLOWING CONTACT ETCH WITH A STOP LAYER PRESENT 审中-公开
标题翻译：用于移除存在停止层的接触蚀刻的光电子和残留物的系统和方法
公开(公告)号：WO2005072211A2
公开(公告)日：2005-08-11
申请号：PCT/US2005001693
申请日：2005-01-19
申请人： MATTSON TECH INC , SAVAS STEPHEN E , HELLE WOLFGANG
发明人： SAVAS STEPHEN E , HELLE WOLFGANG
IPC分类号： H01L21/302 , H01L21/311
CPC分类号： H01L21/31138 , H01L21/02063 , H01L21/31116
摘要： In processing an integrated circuit structure including a contact arrangement that is initially covered by a stop layer, a first plasma is used to etch to form openings through an overall insulation layer covered by a patterned layer of photoresist such that one contact opening is associated with each contact. Stripping of the patterned layer of photoresist and related residues is performed. After stripping, the stop layer is removed from the contacts. In one feature, the stop layer is removed from the contacts by etching the stop layer using a plasma that is generated from a plasma gas input that includes hydrogen and essentially no oxygen. In another feature, the photoresist is stripped after the stop layer is removed. Stripping the patterned layer of photoresist and the related residues is performed, in this case, using a plasma that is formed predominantly including hydrogen without oxygen.
摘要翻译：在处理包括最初由停止层覆盖的接触装置的集成电路结构时，使用第一等离子体来蚀刻以形成通过由图案化的光致抗蚀剂层覆盖的整个绝缘层的开口，使得一个接触开口与每个联系。进行图案化的光致抗蚀剂层和相关残留物的剥离。剥离后，将停止层从触点上取下。在一个特征中，通过使用从包括氢气并且基本上不含氧的等离子体气体输入产生的等离子体来蚀刻停止层，从触点去除停止层。在另一个特征中，在去除阻挡层之后剥离光致抗蚀剂。在这种情况下，使用主要包括氢而不形成氧的等离子体来剥离图案化的光致抗蚀剂层和相关残留物。

9. 发明申请

WO2005038873A2 SYSTEM AND METHOD FOR REMOVAL OF PHOTORESIST IN TRANSISTOR FABRICATION FOR INTEGRATED CIRCUIT MANUFACTURING 审中-公开
标题翻译：用于集成电路制造的晶体管制造中去除光电子元件的系统和方法
公开(公告)号：WO2005038873A2
公开(公告)日：2005-04-28
申请号：PCT/US2004/033785
申请日：2004-10-12
申请人： MATTSON TECHNOLOGY, INC , SAVAS, Stephen, E. , XU, Songlin , DUTTON, David , KADAVANICH, Andreas , GEORGE, Rene
发明人： SAVAS, Stephen, E. , XU, Songlin , DUTTON, David , KADAVANICH, Andreas , GEORGE, Rene
IPC分类号： H01L
CPC分类号： H01L21/31138 , H01L21/02063 , H01L21/02071 , H01L21/67207
摘要： In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.
摘要翻译：在用于制造集成电路以包括支持电互连结构的有源器件结构的技术中，在有源器件结构上形成电连接结构之前，使用光致抗蚀剂层。通过将活性器件结构的光致抗蚀剂和暴露区域暴露于一种或多种使用包含作为反应性物质的主要来源的氢气的气体混合物在等离子体源中产生的反应性物质来除去光致抗蚀剂和相关残余物，例如光致抗蚀剂和残留物连续暴露于基于氢的反应物种。描述了相关联的系统架构，其提供了处理室中的大量氢气流。

10. 发明申请

WO2010068542A1 METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES 审中-公开
标题翻译：在最小化现有结构影响下生长硅氧化物薄膜的方法和装置
公开(公告)号：WO2010068542A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/066482
申请日：2009-12-03
申请人： MATTSON TECHNOLOGY, INC. , PEUSE, Bruce, W. , HU, Yao, Zhi , TIMANS, Paul, Janis , XING, Guangcai , LERCH, Wilfried , TAY, Sing-Pin , SAVAS, Stephen, E. , ROTERS, Georg , NENYEI, Zsolt , SINHA, Ashok
发明人： PEUSE, Bruce, W. , HU, Yao, Zhi , TIMANS, Paul, Janis , XING, Guangcai , LERCH, Wilfried , TAY, Sing-Pin , SAVAS, Stephen, E. , ROTERS, Georg , NENYEI, Zsolt , SINHA, Ashok
IPC分类号： H01L21/316
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

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