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1. 发明申请

US20060166487A1 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
公开(公告)号：US20060166487A1
公开(公告)日：2006-07-27
申请号：US11393999
申请日：2006-03-30
申请人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
发明人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
IPC分类号： H01L21/4763 , H01L21/461
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

2. 发明授权

US07060606B2 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
公开(公告)号：US07060606B2
公开(公告)日：2006-06-13
申请号：US10972191
申请日：2004-10-22
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

3. 发明授权

US06669538B2 Pad cleaning for a CMP system 失效
标题翻译： CMP系统的垫清洁
公开(公告)号：US06669538B2
公开(公告)日：2003-12-30
申请号：US09512745
申请日：2000-02-24
申请人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
发明人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
IPC分类号： B24B100
CPC分类号： B24B53/017
摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.
摘要翻译：本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

4. 发明授权

US06653242B1 Solution to metal re-deposition during substrate planarization 失效
标题翻译：在衬底平面化期间金属再沉积的解决方案
公开(公告)号：US06653242B1
公开(公告)日：2003-11-25
申请号：US09608078
申请日：2000-06-30
申请人： Lizhong Sun , Stan D Tsai , Shijian Li , John M White
发明人： Lizhong Sun , Stan D Tsai , Shijian Li , John M White
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , C09G1/04
摘要： A method and composition for planarizing a substrate. The composition includes one or more surfactants, including one or more anionic surfactants, Zweitter-ionic surfactants, dispersers, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more surfactants of anionic surfactants, Zweitter-ionic surfactants, or combinations thereof.
摘要翻译：一种用于平坦化衬底的方法和组合物。组合物包括一种或多种表面活性剂，包括一种或多种阴离子表面活性剂，Zweitter离子表面活性剂，分散剂或其组合，一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂和去离子水。组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。该方法包括使用包含一种或多种阴离子表面活性剂，Zweitter离子型表面活性剂或其组合的表面活性剂的组合物平面化底物。

5. 发明授权

US06592742B2 Electrochemically assisted chemical polish 失效
公开(公告)号：US06592742B2
公开(公告)日：2003-07-15
申请号：US09905315
申请日：2001-07-13
申请人： Lizhong Sun , Shijian Li
发明人： Lizhong Sun , Shijian Li
IPC分类号： B23H300
CPC分类号： B24B37/24 , B23H3/00 , B23H5/08 , C25F3/16 , C25F7/00
摘要： A method of chemically polishing a metal layer on a substrate is provided. The metal layer is chemically polished using an electrochemical polishing (ECP) process. In the ECP process, the substrate is immersed in a chemical polishing solution including a surfactant. The surfactant in the polishing solution covers the surface of the substrate such that only topographic portions of the substrate surface are exposed to the chemical polishing solution. Thereafter, an electrical potential applied to the substrate removes topographic portions of the substrate that are exposed to the polishing solution.

6. 发明申请

US20060144825A1 Dual reduced agents for barrier removal in chemical mechanical polishing 审中-公开
公开(公告)号：US20060144825A1
公开(公告)日：2006-07-06
申请号：US11368839
申请日：2006-03-06
申请人： Stand Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
发明人： Stand Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302 , B44C1/22 , C23F1/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

7. 发明授权

US06709316B1 Method and apparatus for two-step barrier layer polishing 失效
标题翻译：两步隔层研磨的方法和装置
公开(公告)号：US06709316B1
公开(公告)日：2004-03-23
申请号：US09698864
申请日：2000-10-27
申请人： Lizhong Sun , Stan Tsai , Shijian Li
发明人： Lizhong Sun , Stan Tsai , Shijian Li
IPC分类号： B24B700
CPC分类号： C09G1/02 , H01L21/7684
摘要： A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.
摘要翻译：一种用于平坦化其上设置有阻挡层的衬底表面的方法和组合物。在一个方面，本发明提供了平面化具有阻挡层和设置在其上的含铜材料的衬底表面，包括化学机械抛光衬底以选择性地去除过量的含铜材料，化学机械抛光衬底以选择性地去除剩余的含铜材料，以及阻挡层的一部分，以及化学机械抛光衬底以选择性地去除残留阻挡层。

8. 发明授权

US06541384B1 Method of initiating cooper CMP process 失效
标题翻译：启动联合CMP过程的方法
公开(公告)号：US06541384B1
公开(公告)日：2003-04-01
申请号：US09657391
申请日：2000-09-08
申请人： Lizhong Sun , Stan Tsai , Shijian Li , John White
发明人： Lizhong Sun , Stan Tsai , Shijian Li , John White
IPC分类号： H01L2100
CPC分类号： C09G1/02
摘要： The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water. In another embodiment, it is formed by adding a solution containing the copper (II) compound in deionized water to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.
摘要翻译：本发明提供了一种用于平坦化铜的化学机械抛光组合物和使用该组合物平坦化或起始铜的平面化的方法。化学机械抛光组合物包括氧化剂和铜（II）化合物。组合物任选地包括一种或多种以下化合物类型：络合剂; 腐蚀抑制剂; 酸; 和磨料。在一个实施方案中，氧化剂是过氧化氢，硝酸铁或碘酸盐。在另一个实施方案中，铜（II）化合物是CuSO 4。化学机械抛光方法包括使用包含氧化剂和铜（II）化合物的组合物抛光铜层的步骤。组合物以各种方式形成。在一个实施方案中，其通过将铜（II）化合物加入到含有氧化剂的溶液和任何所包含的任选化合物类型的去离子水中而形成。在另一个实施方案中，其通过在去离子水中将含有铜（II）化合物的溶液在去离子水中加入到含有氧化剂和任何所包含的任选化合物类型的溶液中而形成。

9. 发明申请

US20080045021A1 DUAL REDUCED AGENTS FOR BARRIER REMOVAL IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：用于化学机械抛光中的障碍物去除的双重还原剂
公开(公告)号：US20080045021A1
公开(公告)日：2008-02-21
申请号：US11923276
申请日：2007-10-24
申请人： Stan Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
发明人： Stan Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
IPC分类号： H01L21/461
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.
摘要翻译：提供了通过化学机械抛光技术去除阻挡层材料的组合物和方法。一方面，本发明提供一种组合物，其适于在化学机械抛光技术中除去阻挡层材料，该技术包括至少一种选自二羧酸，三羧酸及其组合的还原剂，至少一种还原剂，其选自该组葡萄糖，羟胺及其组合以及去离子水，其中所述组合物具有约7或更低的pH。组合物可以用于除去阻挡层材料的方法，包括将组合物施加到抛光垫上，并在组合物存在下抛光基底以除去阻挡层。

10. 发明授权

US07220322B1 Cu CMP polishing pad cleaning 失效
标题翻译： Cu CMP抛光垫清洗
公开(公告)号：US07220322B1
公开(公告)日：2007-05-22
申请号：US09645690
申请日：2000-08-24
申请人： Lizhong Sun , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Shijian Li , Fred C. Redeker
IPC分类号： B08B7/04 , H01L21/302
CPC分类号： B24B53/017
摘要： A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.
摘要翻译：在平坦化晶片之后，将抛光垫清除为Cu CMP副产物，通过向抛光垫表面施加包含约0.1至约3.0重量％的组合物的组合物来减少垫玻璃。％的至少一种具有一个或多个胺或酰胺基团的有机化合物，酸或碱的量足以将组合物的pH调节至约5.0至约12.0，其余为水。实施例包括通过以约100至约600ml / min的流速施加pH为约5.0至约12.0的溶液来旋转抛光垫的原位清洁。在研磨具有含Cu表面的晶片之后约3至约20秒，然后通过用水高压冲洗从抛光垫除去清洁溶液。

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