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1. 发明申请

US20060166487A1 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
公开(公告)号：US20060166487A1
公开(公告)日：2006-07-27
申请号：US11393999
申请日：2006-03-30
申请人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
发明人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
IPC分类号： H01L21/4763 , H01L21/461
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

2. 发明申请

US20080045021A1 DUAL REDUCED AGENTS FOR BARRIER REMOVAL IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：用于化学机械抛光中的障碍物去除的双重还原剂
公开(公告)号：US20080045021A1
公开(公告)日：2008-02-21
申请号：US11923276
申请日：2007-10-24
申请人： Stan Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
发明人： Stan Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
IPC分类号： H01L21/461
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.
摘要翻译：提供了通过化学机械抛光技术去除阻挡层材料的组合物和方法。一方面，本发明提供一种组合物，其适于在化学机械抛光技术中除去阻挡层材料，该技术包括至少一种选自二羧酸，三羧酸及其组合的还原剂，至少一种还原剂，其选自该组葡萄糖，羟胺及其组合以及去离子水，其中所述组合物具有约7或更低的pH。组合物可以用于除去阻挡层材料的方法，包括将组合物施加到抛光垫上，并在组合物存在下抛光基底以除去阻挡层。

3. 发明申请

US20050282380A1 METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR SUBSTRATES 失效
标题翻译：半导体基板的化学机械抛光方法与装置
公开(公告)号：US20050282380A1
公开(公告)日：2005-12-22
申请号：US10972191
申请日：2004-10-22
申请人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
发明人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
IPC分类号： B24B37/04 , B24B49/16 , H01L21/321 , H01L21/768 , H01L21/00 , B24B49/00 , B24B51/00 , H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
摘要翻译：提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。磨料的百分比。抛光工艺可以集成到多步抛光工艺中。

4. 发明申请

US20060144825A1 Dual reduced agents for barrier removal in chemical mechanical polishing 审中-公开
公开(公告)号：US20060144825A1
公开(公告)日：2006-07-06
申请号：US11368839
申请日：2006-03-06
申请人： Stand Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
发明人： Stand Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302 , B44C1/22 , C23F1/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

5. 发明授权

US07060606B2 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
公开(公告)号：US07060606B2
公开(公告)日：2006-06-13
申请号：US10972191
申请日：2004-10-22
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

6. 发明授权

US07008554B2 Dual reduced agents for barrier removal in chemical mechanical polishing 失效
公开(公告)号：US07008554B2
公开(公告)日：2006-03-07
申请号：US10193810
申请日：2002-07-11
申请人： Stan D. Tsai , Shijian Li , Feng Q. Liu , Lizhong Sun , Liang-Yuh Chen
发明人： Stan D. Tsai , Shijian Li , Feng Q. Liu , Lizhong Sun , Liang-Yuh Chen
IPC分类号： C09K13/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

7. 发明授权

US07375023B2 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
标题翻译：半导体衬底的化学机械抛光方法和装置
公开(公告)号：US07375023B2
公开(公告)日：2008-05-20
申请号：US11393999
申请日：2006-03-30
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
摘要翻译：提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。在一个方面，提供了一种处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更大的压板旋转速度下抛光衬底。抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。磨料的百分比。抛光工艺可以集成到多步抛光工艺中。

8. 发明授权

US06821881B2 Method for chemical mechanical polishing of semiconductor substrates 失效
标题翻译：半导体衬底的化学机械抛光方法
公开(公告)号：US06821881B2
公开(公告)日：2004-11-23
申请号：US10199444
申请日：2002-07-19
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
摘要翻译：提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。磨料的百分比。抛光工艺可以集成到多步抛光工艺中。

9. 发明授权

US06709316B1 Method and apparatus for two-step barrier layer polishing 失效
标题翻译：两步隔层研磨的方法和装置
公开(公告)号：US06709316B1
公开(公告)日：2004-03-23
申请号：US09698864
申请日：2000-10-27
申请人： Lizhong Sun , Stan Tsai , Shijian Li
发明人： Lizhong Sun , Stan Tsai , Shijian Li
IPC分类号： B24B700
CPC分类号： C09G1/02 , H01L21/7684
摘要： A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.
摘要翻译：一种用于平坦化其上设置有阻挡层的衬底表面的方法和组合物。在一个方面，本发明提供了平面化具有阻挡层和设置在其上的含铜材料的衬底表面，包括化学机械抛光衬底以选择性地去除过量的含铜材料，化学机械抛光衬底以选择性地去除剩余的含铜材料，以及阻挡层的一部分，以及化学机械抛光衬底以选择性地去除残留阻挡层。

10. 发明授权

US06541384B1 Method of initiating cooper CMP process 失效
标题翻译：启动联合CMP过程的方法
公开(公告)号：US06541384B1
公开(公告)日：2003-04-01
申请号：US09657391
申请日：2000-09-08
申请人： Lizhong Sun , Stan Tsai , Shijian Li , John White
发明人： Lizhong Sun , Stan Tsai , Shijian Li , John White
IPC分类号： H01L2100
CPC分类号： C09G1/02
摘要： The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water. In another embodiment, it is formed by adding a solution containing the copper (II) compound in deionized water to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.
摘要翻译：本发明提供了一种用于平坦化铜的化学机械抛光组合物和使用该组合物平坦化或起始铜的平面化的方法。化学机械抛光组合物包括氧化剂和铜（II）化合物。组合物任选地包括一种或多种以下化合物类型：络合剂; 腐蚀抑制剂; 酸; 和磨料。在一个实施方案中，氧化剂是过氧化氢，硝酸铁或碘酸盐。在另一个实施方案中，铜（II）化合物是CuSO 4。化学机械抛光方法包括使用包含氧化剂和铜（II）化合物的组合物抛光铜层的步骤。组合物以各种方式形成。在一个实施方案中，其通过将铜（II）化合物加入到含有氧化剂的溶液和任何所包含的任选化合物类型的去离子水中而形成。在另一个实施方案中，其通过在去离子水中将含有铜（II）化合物的溶液在去离子水中加入到含有氧化剂和任何所包含的任选化合物类型的溶液中而形成。

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