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1. 发明授权

US06602806B1 Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film 失效
标题翻译：用于沉积低介电常数碳掺杂氧化硅膜的热CVD工艺
公开(公告)号：US06602806B1
公开(公告)日：2003-08-05
申请号：US09632668
申请日：2000-08-07
申请人： Li-Qun Xia , Fabrice Geiger , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Fabrice Geiger , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02129 , H01L21/02211 , H01L21/02271 , H01L21/02312 , H01L21/0234 , H01L21/02362 , H01L21/31633
摘要： A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond. During the deposition process the wafer is heated to a temperature less than 250° C. and preferably to a temperature between 100-200° C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.
摘要翻译：一种提供具有低介电常数的电介质膜的方法。沉积膜特别可用作集成电路中的金属间或前金属介电层。低介电常数膜是从与CVD等离子体相反的CVD法沉积的碳掺杂氧化硅层。该层由臭氧的工艺气体和具有至少一个硅 - 碳（Si-C）键的有机硅烷前体沉积。在沉积过程中，将晶片加热到低于250℃的温度，优选加热到100-200℃之间的温度。对该方法的增强包括加入硼和/或磷掺杂剂，两步沉积和封盖柱固化层。

2. 发明申请

US20080132087A1 POST-DEPOSITION TREATMENT TO ENHANCE PROPERTIES OF SI-O-C LOW K FILMS 失效
标题翻译：后沉积处理以提高SI-O-C低K膜的性能
公开(公告)号：US20080132087A1
公开(公告)日：2008-06-05
申请号：US12013232
申请日：2008-01-11
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

3. 发明授权

US06858923B2 Post-deposition treatment to enhance properties of Si-O-C low films 有权
标题翻译：后沉积处理以增强Si-O-C低电阻膜的性能
公开(公告)号：US06858923B2
公开(公告)日：2005-02-22
申请号：US10293096
申请日：2002-11-12
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： C23C16/02 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/314 , H01L21/316 , H01L23/02
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

4. 发明授权

US07326657B2 Post-deposition treatment to enhance properties of Si-O-C low k films 有权
标题翻译：后沉积处理以提高Si-O-C低k膜的性能
公开(公告)号：US07326657B2
公开(公告)日：2008-02-05
申请号：US10990251
申请日：2004-11-15
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

5. 发明授权

US08143174B2 Post-deposition treatment to enhance properties of Si-O-C low K films 失效
标题翻译：后沉积处理以提高Si-O-C低K膜的性能
公开(公告)号：US08143174B2
公开(公告)日：2012-03-27
申请号：US12013232
申请日：2008-01-11
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L21/26
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

6. 发明授权

US06635575B1 Methods and apparatus to enhance properties of Si-O-C low K films 失效
标题翻译：提高Si-O-C低K膜性能的方法和装置
公开(公告)号：US06635575B1
公开(公告)日：2003-10-21
申请号：US09633196
申请日：2000-08-07
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L21302
CPC分类号： H01L21/02126 , C23C16/0245 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3146 , H01L21/31604 , H01L21/31612
摘要： A method for providing a dielectric film having enhanced adhesion and stability. Pre-deposition, post deposition and post cure treatments enhance adhesion of the dielectric film to an underlying substrate and overlying cap layer. The enhanced film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. A pre-deposition treatment process with atomic hydrogen enhances film adhesion by reducing weakly bound oxides on the surface of the substrate. A post-deposition densification process in a reducing atmosphere enhances stability if the film is to be cured ex-situ. In a preferred embodiment, the layer a low dielectric constant film deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。预沉积，后沉积和后固化处理增强了介电膜对底层基底和覆盖层的粘附。增强膜在集成电路中作为金属间或前金属介质层是特别有用的。具有原子氢的预沉积处理方法通过减少衬底表面上的弱结合氧化物来增强膜的粘附性。在还原气氛中的沉积后致密化过程如果要非原位固化，则可提高稳定性。在优选实施方案中，该层由臭氧的工艺气体沉积的低介电常数膜和具有至少一个硅 - 碳（Si-C）键的有机硅烷前体。

7. 发明授权

US06486061B1 Post-deposition treatment to enhance properties of Si-O-C low K films 失效
标题翻译：后沉积处理以提高Si-O-C低K膜的性能
公开(公告)号：US06486061B1
公开(公告)日：2002-11-26
申请号：US09632669
申请日：2000-08-07
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L2144
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

8. 发明授权

US07074708B2 Method of decreasing the k value in sioc layer deposited by chemical vapor deposition 有权
标题翻译：通过化学气相沉积沉积的沉积层中降低k值的方法
公开(公告)号：US07074708B2
公开(公告)日：2006-07-11
申请号：US10789209
申请日：2004-02-27
申请人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
发明人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/314 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76814 , H01L21/76828
摘要： A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
摘要翻译：一种用于处理衬底的方法，包括通过化学气相沉积在衬底上沉积含有硅，氧和碳的电介质层，其中所述电介质层的碳含量至少为原子量的1％，介电常数小于约并且在电介质层上沉积含硅和碳的层。通过使烷基硅烷在相对惰性气体的等离子体中反应而进一步沉积非晶质氢化碳化硅层，沉积了具有三个或更多个甲基的有机硅化合物沉积的电介质层的介电常数显着降低。

9. 发明授权

US06750141B2 Silicon carbide cap layers for low dielectric constant silicon oxide layers 失效
标题翻译：用于低介电常数氧化硅层的碳化硅盖层
公开(公告)号：US06750141B2
公开(公告)日：2004-06-15
申请号：US10236800
申请日：2002-09-06
申请人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L214763
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02271 , H01L21/02362 , H01L21/31633 , H01L21/76813 , H01L21/76828 , H01L21/76829
摘要： A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
摘要翻译：公开了一种形成用于集成电路制造工艺的低介电常数硅酸盐材料的方法。低介电常数硅酸盐材料是通过使包含有机硅烷化合物，氧源和惰性气体的气体混合物反应而形成的。此后，通过使包含硅源和碳源的气体混合物反应，在硅酸盐材料上形成碳化硅盖层。当在随后的退火步骤中硬化时，碳化硅盖层保护下面的有机硅酸盐层不被开裂和剥离。

10. 发明授权

US06632478B2 Process for forming a low dielectric constant carbon-containing film 失效
标题翻译：用于形成低介电常数含碳膜的方法
公开(公告)号：US06632478B2
公开(公告)日：2003-10-14
申请号：US09791989
申请日：2001-02-22
申请人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
发明人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
IPC分类号： C23C1640
CPC分类号： B05D1/60 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3146 , H01L21/31633
摘要： An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.
摘要翻译：本发明的一个实施方案提供了形成具有低介电常数和良好间隙填充能力的含碳层的方法。一种方法包括在基底上沉积含碳层并转化含碳层以除去至少一些碳。转化步骤可以包括例如在含有氢气氛的炉子中退火含碳层。含碳层可以是碳掺杂的氧化硅材料，其中转化步骤改变碳掺杂的氧化硅。另外，该方法可以包括对退火层进行氢和/或低氧等离子体处理以进一步从层去除碳。此外，提供了向退火的等离子体处理材料添加覆盖层的步骤。还包括通过上述方法制备的产品，例如包含低k含碳层的产品，其中低k含碳层已被转化以从层中去除一些碳。另外的产物包括进一步进行氢等离子体处理以从层中除去更多的碳的转化含碳层。此外，提供了沉积在转化和氢等离子体处理层上的覆盖层

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