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1. 发明授权

US06632478B2 Process for forming a low dielectric constant carbon-containing film 失效
标题翻译：用于形成低介电常数含碳膜的方法
公开(公告)号：US06632478B2
公开(公告)日：2003-10-14
申请号：US09791989
申请日：2001-02-22
申请人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
发明人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
IPC分类号： C23C1640
CPC分类号： B05D1/60 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3146 , H01L21/31633
摘要： An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.
摘要翻译：本发明的一个实施方案提供了形成具有低介电常数和良好间隙填充能力的含碳层的方法。一种方法包括在基底上沉积含碳层并转化含碳层以除去至少一些碳。转化步骤可以包括例如在含有氢气氛的炉子中退火含碳层。含碳层可以是碳掺杂的氧化硅材料，其中转化步骤改变碳掺杂的氧化硅。另外，该方法可以包括对退火层进行氢和/或低氧等离子体处理以进一步从层去除碳。此外，提供了向退火的等离子体处理材料添加覆盖层的步骤。还包括通过上述方法制备的产品，例如包含低k含碳层的产品，其中低k含碳层已被转化以从层中去除一些碳。另外的产物包括进一步进行氢等离子体处理以从层中除去更多的碳的转化含碳层。此外，提供了沉积在转化和氢等离子体处理层上的覆盖层

2. 发明申请

US20110287577A1 METHOD OF CLEANING AND FORMING A NEGATIVELY CHARGED PASSIVATION LAYER OVER A DOPED REGION 失效
公开(公告)号：US20110287577A1
公开(公告)日：2011-11-24
申请号：US13196532
申请日：2011-08-02
申请人： Michael P. STEWART , Lisong Zhou , Jen Shu , Li (Sherry) Xu
发明人： Michael P. STEWART , Lisong Zhou , Jen Shu , Li (Sherry) Xu
IPC分类号： H01L31/18
CPC分类号： H01L31/1868 , C23C16/0245 , C23C16/345 , H01L31/02167 , H01L31/02168 , Y02E10/50 , Y02P70/521
摘要： The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.

3. 发明授权

US06340628B1 Method to deposit SiOCH films with dielectric constant below 3.0 有权
标题翻译：沉积介电常数低于3.0的SiOCH膜的方法
公开(公告)号：US06340628B1
公开(公告)日：2002-01-22
申请号：US09735318
申请日：2000-12-12
申请人： Patrick A. Van Cleemput , Ravi Kumar Laxman , Jen Shu , Michelle T. Schulberg , Bunsen Nie
发明人： Patrick A. Van Cleemput , Ravi Kumar Laxman , Jen Shu , Michelle T. Schulberg , Bunsen Nie
IPC分类号： H01L213205
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02216 , H01L21/02274 , H01L21/31633
摘要： A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO2 with O2 or CO2 with CxH(2x+1)OH where 1≦x≦5, to deposit a dielectric layer with no photoresist “footing”, a low dielectric constant, and high degrees of adhesion and hardness. Because nitrogen is not used in the deposition process (the carbon-dioxide-containing gas replaces nitrogen-containing gases in conventional processes), amines do not build into the deposited layer, thereby preventing photoresist “footing”.
摘要翻译：化学气相沉积（CVD）方法使用前体气体，例如与硅氧烷或烷基硅烷，以及含二氧化碳的气体，例如具有C x H（2x + 1）OH的O 2或CO 2的二氧化碳气体，其中1 <= x 为了沉积没有光致抗蚀剂“基脚”的介电层，低介电常数和高度的附着力和硬度。由于在沉积工艺中不使用氮（在常规工艺中，含二氧化碳的气体替代含氮气体），胺不会沉积到沉积层中，从而防止光致抗蚀剂“基础”。

4. 发明授权

US08084310B2 Self-aligned multi-patterning for advanced critical dimension contacts 有权
标题翻译：用于高级关键尺寸触点的自对准多图案
公开(公告)号：US08084310B2
公开(公告)日：2011-12-27
申请号：US12603371
申请日：2009-10-21
申请人： Bencherki Mebarki , Li Yan Miao , Christopher Dennis Bencher , Jen Shu
发明人： Bencherki Mebarki , Li Yan Miao , Christopher Dennis Bencher , Jen Shu
IPC分类号： H01L21/00
CPC分类号： H01L21/0337
摘要： Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask. A spacer layer is formed over a two-dimensional square grid of cores with a thickness chosen to leave a dimple at the center of four cores on the corners of a square. The spacer layer is etched back to reveal the substrate at the centers of the square. Removing the core material results in double the pattern density of the lithographically defined grid of cores. The regions of exposed substrate may be filled again with core material and the process repeated to quadruple the pattern density.
摘要翻译：本发明的实施例涉及在使用单个高分辨率光掩模的标准光刻处理技术的可能性方面，在具有减小的间距的基板上形成图案化特征的方法。间隔层形成在芯的二维正方形网格上，其厚度被选择为在正方形的角上的四个芯的中心处留下凹坑。将间隔层回蚀刻以在正方形的中心露出基底。去除核心材料会导致光刻图形格网格的图案密度增加一倍。暴露的衬底的区域可以再次用芯材料填充，并且重复该过程以使图案密度增加四倍。

5. 发明授权

US06383933B1 Method of using organic material to enhance STI planarization or other planarization processes 有权
标题翻译：使用有机材料增强STI平坦化或其他平坦化工艺的方法
公开(公告)号：US06383933B1
公开(公告)日：2002-05-07
申请号：US09534147
申请日：2000-03-23
申请人： Jen Shu , Michael E. Thomas , Prochy Sethna
发明人： Jen Shu , Michael E. Thomas , Prochy Sethna
IPC分类号： H01L2100
CPC分类号： H01L21/76819 , H01L21/31053 , H01L21/31056 , H01L21/76229
摘要： A planarization process in which an organic film prevents oxide dishing during the chemical mechanical polishing step. In the planarization process an organic film having high CMP selectivity to silicon dioxide is spun over silicon dioxide. A patterned mask is then placed over the organic film and the exposed portions of the organic film are etched away. The remaining portions of the organic film prevent oxide dishing during chemical mechanical polishing because the high CMP selectivity of the organic film to silicon dioxide stops the etching before oxide dishing occurs. The organic film may then be oxygen ashed off the planarized surface if so desired.
摘要翻译：在化学机械抛光步骤中有机膜防止氧化物凹陷的平坦化工艺。在平坦化工艺中，在二氧化硅上旋转对二氧化硅具有高CMP选择性的有机膜。然后将有图案的掩模放置在有机膜上，并且有机膜的暴露部分被蚀刻掉。有机膜的剩余部分在化学机械抛光期间防止氧化物凹陷，因为有机膜对二氧化硅的高CMP选择性在氧化物发生脱色之前停止蚀刻。如果需要，有机膜然后可以是从平坦化表面脱落的氧。

6. 发明申请

US20100136792A1 SELF-ALIGNED MULTI-PATTERNING FOR ADVANCED CRITICAL DIMENSION CONTACTS 有权
标题翻译：用于高级关键尺寸联系人的自对准多模式
公开(公告)号：US20100136792A1
公开(公告)日：2010-06-03
申请号：US12603371
申请日：2009-10-21
申请人： Bencherki Mebarki , Li Yan Miao , Christopher Dennis Bencher , Jen Shu
发明人： Bencherki Mebarki , Li Yan Miao , Christopher Dennis Bencher , Jen Shu
IPC分类号： H01L21/30 , G03F7/20
CPC分类号： H01L21/0337
摘要： Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask. A spacer layer is formed over a two-dimensional square grid of cores with a thickness chosen to leave a dimple at the center of four cores on the corners of a square. The spacer layer is etched back to reveal the substrate at the centers of the square. Removing the core material results in double the pattern density of the lithographically defined grid of cores. The regions of exposed substrate may be filled again with core material and the process repeated to quadruple the pattern density.
摘要翻译：本发明的实施例涉及在使用单个高分辨率光掩模的标准光刻处理技术的可能性方面，在具有减小的间距的基板上形成图案化特征的方法。间隔层形成在芯的二维正方形网格上，其厚度被选择为在正方形的角上的四个芯的中心处留下凹坑。将间隔层回蚀刻以在正方形的中心露出基底。去除核心材料会导致光刻图形格网格的图案密度增加一倍。暴露的衬底的区域可以再次用芯材料填充，并且重复该过程以使图案密度增加四倍。

7. 发明授权

US06576345B1 Dielectric films with low dielectric constants 失效
标题翻译：介电常数低的介电薄膜
公开(公告)号：US06576345B1
公开(公告)日：2003-06-10
申请号：US09727796
申请日：2000-11-30
申请人： Patrick A. Van Cleemput , Ravi Kumar Laxman , Jen Shu , Michelle T. Schulberg , Bunsen Nie
发明人： Patrick A. Van Cleemput , Ravi Kumar Laxman , Jen Shu , Michelle T. Schulberg , Bunsen Nie
IPC分类号： B32B2520
CPC分类号： C08G77/045 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/76813 , Y02P20/544 , Y10S427/101 , Y10S428/902 , Y10T428/12396 , Y10T428/31663
摘要： Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like molecular structure and porous nature. Supercritical fluids may be used as the reaction medium and developer both to the dissolve and deliver the caged-siloxane precursors and to remove reagents and byproducts from the reaction chamber and resultant porous film created.
摘要翻译：在集成电路或其它基板上形成具有低介电常数（例如介电常数低于3.0）的薄膜。笼式硅氧烷前体以形成电介质层的方式连接，其通过其二氧化硅样分子结构和多孔性质表现出低的介电常数。超临界流体可以用作反应介质和显影剂，以溶解和递送笼状硅氧烷前体，并从反应室中除去试剂和副产物，并产生所得到的多孔膜。

8. 发明授权

US08268728B2 Method of cleaning and forming a negatively charged passivation layer over a doped region 失效
标题翻译：在掺杂区域上清洁和形成带负电荷的钝化层的方法
公开(公告)号：US08268728B2
公开(公告)日：2012-09-18
申请号：US13196532
申请日：2011-08-02
申请人： Michael P. Stewart , Lisong Zhou , Jen Shu , Li (Sherry) Xu
发明人： Michael P. Stewart , Lisong Zhou , Jen Shu , Li (Sherry) Xu
IPC分类号： H01L21/302
CPC分类号： H01L31/1868 , C23C16/0245 , C23C16/345 , H01L31/02167 , H01L31/02168 , Y02E10/50 , Y02P70/521
摘要： The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.
摘要翻译：本发明通常提供一种通过在含硅衬底上制备表面和/或形成至少一部分高质量钝化层来形成高效太阳能电池器件的方法。本发明的实施例可以特别用于制备形成在硅衬底上的p型掺杂区的表面，从而可以在其上形成高质量的钝化层。在一个实施例中，所述方法包括将太阳能电池基板的表面暴露于等离子体以清洁和修改表面的物理，化学和/或电特性。

9. 发明授权

US08008208B2 Method of cleaning and forming a negatively charged passivation layer over a doped region 有权
标题翻译：在掺杂区域上清洁和形成带负电荷的钝化层的方法
公开(公告)号：US08008208B2
公开(公告)日：2011-08-30
申请号：US12962483
申请日：2010-12-07
申请人： Michael P. Stewart , Lisong Zhou , Jen Shu , Li (Sherry) Xu
发明人： Michael P. Stewart , Lisong Zhou , Jen Shu , Li (Sherry) Xu
IPC分类号： H01L21/302
CPC分类号： H01L31/1868 , C23C16/0245 , C23C16/345 , H01L31/02167 , H01L31/02168 , Y02E10/50 , Y02P70/521
摘要： The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.
摘要翻译：本发明通常提供一种通过在含硅衬底上制备表面和/或形成至少一部分高质量钝化层来形成高效太阳能电池器件的方法。本发明的实施例可以特别用于制备形成在硅衬底上的p型掺杂区的表面，从而可以在其上形成高质量的钝化层。在一个实施例中，所述方法包括将太阳能电池基板的表面暴露于等离子体以清洁和修改表面的物理，化学和/或电特性。

10. 发明授权

US06593615B1 Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD 有权
公开(公告)号：US06593615B1
公开(公告)日：2003-07-15
申请号：US09982419
申请日：2001-10-18
申请人： Jen Shu , Michael E. Thomas
发明人： Jen Shu , Michael E. Thomas
IPC分类号： H01L2701
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/4412 , H01L21/02211 , H01L21/02274 , H01L21/31633
摘要： Substrate bombardment during HDP deposition of carbon-doped silicon oxide film results in filling the gaps between metal lines with carbon-doped low k dielectric material. This leads to the placement of low k dielectric between the narrow metal lines while the films over the metal lines have higher dielectric constant due to removal of carbon from these films during ion bombardment. Films over the metal lines have properties similar to silicon dioxide and are ready for sequential integration processes.

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