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1. 发明授权

US07074708B2 Method of decreasing the k value in sioc layer deposited by chemical vapor deposition 有权
标题翻译：通过化学气相沉积沉积的沉积层中降低k值的方法
公开(公告)号：US07074708B2
公开(公告)日：2006-07-11
申请号：US10789209
申请日：2004-02-27
申请人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
发明人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/314 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76814 , H01L21/76828
摘要： A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
摘要翻译：一种用于处理衬底的方法，包括通过化学气相沉积在衬底上沉积含有硅，氧和碳的电介质层，其中所述电介质层的碳含量至少为原子量的1％，介电常数小于约并且在电介质层上沉积含硅和碳的层。通过使烷基硅烷在相对惰性气体的等离子体中反应而进一步沉积非晶质氢化碳化硅层，沉积了具有三个或更多个甲基的有机硅化合物沉积的电介质层的介电常数显着降低。

2. 发明授权

US06784119B2 Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition 有权
公开(公告)号：US06784119B2
公开(公告)日：2004-08-31
申请号：US10632179
申请日：2003-07-31
申请人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
发明人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
IPC分类号： H01L2131
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/314 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76814 , H01L21/76828
摘要： A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.

3. 发明授权

US06627532B1 Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition 有权
标题翻译：通过化学气相沉积沉积的SiOC层中降低K值的方法
公开(公告)号：US06627532B1
公开(公告)日：2003-09-30
申请号：US09679843
申请日：2000-10-05
申请人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
发明人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
IPC分类号： H01L214763
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/314 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76814 , H01L21/76828
摘要： A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
摘要翻译：一种用于处理衬底的方法，包括通过化学气相沉积在衬底上沉积包括硅，氧和碳的电介质层，其中介电层具有至少1％原子量的碳含量和小于约并且在电介质层上沉积含硅和碳的层。通过使烷基硅烷在相对惰性气体的等离子体中反应而进一步沉积非晶质氢化碳化硅层，沉积了具有三个或更多个甲基的有机硅化合物沉积的电介质层的介电常数显着降低。

4. 发明授权

US06632478B2 Process for forming a low dielectric constant carbon-containing film 失效
标题翻译：用于形成低介电常数含碳膜的方法
公开(公告)号：US06632478B2
公开(公告)日：2003-10-14
申请号：US09791989
申请日：2001-02-22
申请人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
发明人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
IPC分类号： C23C1640
CPC分类号： B05D1/60 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3146 , H01L21/31633
摘要： An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.
摘要翻译：本发明的一个实施方案提供了形成具有低介电常数和良好间隙填充能力的含碳层的方法。一种方法包括在基底上沉积含碳层并转化含碳层以除去至少一些碳。转化步骤可以包括例如在含有氢气氛的炉子中退火含碳层。含碳层可以是碳掺杂的氧化硅材料，其中转化步骤改变碳掺杂的氧化硅。另外，该方法可以包括对退火层进行氢和/或低氧等离子体处理以进一步从层去除碳。此外，提供了向退火的等离子体处理材料添加覆盖层的步骤。还包括通过上述方法制备的产品，例如包含低k含碳层的产品，其中低k含碳层已被转化以从层中去除一些碳。另外的产物包括进一步进行氢等离子体处理以从层中除去更多的碳的转化含碳层。此外，提供了沉积在转化和氢等离子体处理层上的覆盖层

5. 发明授权

US06583497B2 Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing 失效
标题翻译：表面处理c掺杂的SiO 2膜，以提高O2在灰化期间的稳定性
公开(公告)号：US06583497B2
公开(公告)日：2003-06-24
申请号：US10192274
申请日：2002-07-09
申请人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L2358
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31612 , H01L21/31633
摘要： A method for forming an insulation layer over a substrate. The method forms a carbon-doped silicon oxide layer by thermal chemical vapor deposition using an organosilane. The carbon-doped silicon oxide layer is subsequently cured and densified. In one embodiment, the cured film is densified in a nitrogen-containing plasma. The method is particularly suitable for deposition of low dielectric constant films, i.e., where k is less than or equal to 3.0. Low-k, carbon-doped silicon oxide methylsilane or di-, tri-, tetra-, or phenylmethylsilane. and ozone. The above method can be carried out in a substrate processing system having a process chamber; a substrate holder, a heater, a gas delivery system, and a power supply, all of which are coupled to a controller. The controller contains a memory having a computer-readable medium with a program embodied for directing operation of the system in accordance with above method.
摘要翻译：一种在衬底上形成绝缘层的方法。该方法通过使用有机硅烷的热化学气相沉积形成碳掺杂氧化硅层。碳掺杂氧化硅层随后被固化和致密化。在一个实施方案中，固化膜在含氮等离子体中致密化。该方法特别适用于沉积低介电常数膜，即其中k小于或等于3.0。低k，碳掺杂的氧化硅甲基硅烷或二，三，四或苯基甲基硅烷。和臭氧。上述方法可以在具有处理室的基板处理系统中进行; 衬底保持器，加热器，气体输送系统和电源，所有这些都耦合到控制器。控制器包含具有计算机可读介质的存储器，该计算机可读介质具有根据上述方法指导系统操作的程序。

6. 发明授权

US06465372B1 Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing 有权
标题翻译：表面处理C掺杂SiO2薄膜，以提高O2在灰化过程中的稳定性
公开(公告)号：US06465372B1
公开(公告)日：2002-10-15
申请号：US09633495
申请日：2000-08-07
申请人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31612 , H01L21/31633
摘要： A method for forming an insulation layer over a substrate. The method forms a carbon-doped silicon oxide layer by thermal chemical vapor deposition using an organosilane. The carbon-doped silicon oxide layer is subsequently cured and densified. In one embodiment, the cured film is densified in a nitrogen-containing plasma. The method is particularly suitable for deposition of low dielectric constant films, i.e., where k is less than or equal to 3.0. Low-k, carbon-doped silicon oxide methylsilane or di-, tri-, tetra-, or phenylmethylsilane. and ozone. The above method can be carried out in a substrate processing system having a process chamber; a substrate holder, a heater, a gas delivery system, and a power supply, all of which are coupled to a controller. The controller contains a memory having a computer-readable medium with a program embodied for directing operation of the system in accordance with above method.
摘要翻译：一种在衬底上形成绝缘层的方法。该方法通过使用有机硅烷的热化学气相沉积形成碳掺杂氧化硅层。碳掺杂氧化硅层随后被固化和致密化。在一个实施方案中，固化膜在含氮等离子体中致密化。该方法特别适用于沉积低介电常数膜，即其中k小于或等于3.0。低k，碳掺杂的氧化硅甲基硅烷或二，三，四或苯基甲基硅烷。和臭氧。上述方法可以在具有处理室的基板处理系统中进行; 衬底保持器，加热器，气体输送系统和电源，所有这些都耦合到控制器。控制器包含具有计算机可读介质的存储器，该计算机可读介质具有根据上述方法指导系统操作的程序。

7. 发明授权

US06573196B1 Method of depositing organosilicate layers 失效
标题翻译：沉积有机硅酸盐层的方法
公开(公告)号：US06573196B1
公开(公告)日：2003-06-03
申请号：US09638803
申请日：2000-08-12
申请人： Frederick Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh
发明人： Frederick Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh
IPC分类号： H01L21469
CPC分类号： H01L21/76835 , B05D1/62 , C23C16/30 , G03F7/091 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/31604 , H01L21/31612 , H01L21/76801 , H01L21/76807 , H01L21/7681
摘要： A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising a phenyl-based silane compound. The gas mixture may optionally include an oxidizing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an anti-reflective coating (ARC). In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了形成有机硅酸盐层的方法。通过向包含苯基硅烷化合物的气体混合物施加电场而形成有机硅酸盐层。气体混合物可任选地包括氧化气体。有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，有机硅酸盐层用作抗反射涂层（ARC）。在另一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。

8. 发明授权

US06614181B1 UV radiation source for densification of CVD carbon-doped silicon oxide films 有权
标题翻译：用于CVD碳掺杂氧化硅膜致密化的UV辐射源
公开(公告)号：US06614181B1
公开(公告)日：2003-09-02
申请号：US09644938
申请日：2000-08-23
申请人： Keith R. Harvey , Tian-Hoe Lim , Li-Qun Xia
发明人： Keith R. Harvey , Tian-Hoe Lim , Li-Qun Xia
IPC分类号： H01K150
CPC分类号： H01J61/28 , C23C16/56
摘要： A UV radiation source is tunable to optimize the process of densifying a carbon-doped silicon oxide film. The composition and relative concentration of stimulated gases stimulated within an airtight bulb is controlled to produce radiation optimized for absorption by undesirable chemical bonds of the carbon-doped silicon oxide film, leading to disruption of these bonds and their replacement by more desirable stable chemical bonds. The energy of radiation emitted by the source is determined by the identity of excited chemical species, and the intensity of the radiation emitted by the source is determined by the concentration of the excited chemical species. By exciting a specific mixture of gases, radiation is emitted at a combination of energies and intensities calculated to disrupt populations of unstable bonds in the carbon-doped silicon oxide film while leaving desirable bonds in the film unaffected.
摘要翻译： UV辐射源是可调谐的，以优化致密化碳掺杂氧化硅膜的过程。控制在气密灯泡内刺激的受激气体的组成和相对浓度，以产生优化用于通过碳掺杂氧化硅膜的不期望的化学键吸收的辐射，导致这些键的破坏和它们被更理想的稳定化学键的取代。由源发射的辐射的能量由激发的化学物质的身份确定，源的辐射强度由激发的化学物质的浓度决定。通过激发特定的气体混合物，辐射以能量和强度的组合发射，计算为在碳掺杂的氧化硅膜中破坏不稳定键的群体，同时在膜中留下期望的键不受影响。

9. 发明授权

US06255222B1 Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process 有权
标题翻译：从硅衬底处理室排气管中除去硅 - 氧 - 碳沉积工艺残留物的方法
公开(公告)号：US06255222B1
公开(公告)日：2001-07-03
申请号：US09379834
申请日：1999-08-24
申请人： Li-Qun Xia , Himanshu Pokharrna , Tian-Hoe Lim
发明人： Li-Qun Xia , Himanshu Pokharrna , Tian-Hoe Lim
IPC分类号： H01L2100
CPC分类号： C23C16/4412 , B01D53/32 , B01D2259/818 , C23C16/4405 , Y10S438/905
摘要： A method of minimizing particle or residue accumulation within an exhaust line of a substrate processing chamber having a downstream plasma apparatus connected to the exhaust line. One embodiment of the method turns ON the downstream plasma apparatus during a substrate deposition step and a chamber clean operation, and switches the downstream plasma apparatus OFF at other times including the time during which purge gases are flowed into the chamber and various chamber set up or conditioning steps are performed. The method includes depositing a film over a substrate disposed in the substrate processing chamber by (i) flowing a deposition gas into the substrate processing chamber, exhausting at least some of the deposition gas from the processing chamber through an exhaust line and into the downstream plasma apparatus, and forming a plasma within the downstream plasma apparatus; and then (ii) stopping the flow of the deposition gas, turning the plasma OFF, and flowing a purge gas into the substrate processing chamber. After one or more film deposition steps, the chamber is cleaned to remove film deposition from the interior surfaces of the chamber by (i) flowing an etchant into the substrate processing chamber, exhausting the etchant from the substrate processing chamber through an exhaust line and into the downstream plasma apparatus, and forming a plasma within the downstream plasma apparatus; and then (ii) stopping the flow of the etchant, turning the plasma OFF, and flowing a purge gas into the substrate processing chamber.
摘要翻译：一种使具有连接到排气管线的下游等离子体装置的衬底处理室的排气管线内的颗粒或残渣积聚最小化的方法。该方法的一个实施例在衬底沉积步骤和腔室清洁操作期间使下游等离子体装置接通，并且在其他时间将下游等离子体装置切换，包括吹扫气体流入腔室和各种室内设置的时间执行调节步骤。该方法包括：（i）将沉积气体流入衬底处理室，通过排气管排出来自处理室的至少一些沉积气体并排入下游等离子体装置，并在下游等离子体装置内形成等离子体; 然后（ii）停止沉积气体的流动，关闭等离子体，并且将净化气体流入基板处理室。在一个或多个膜沉积步骤之后，通过（i）将蚀刻剂流入衬底处理室中来清洁腔室以从腔室的内表面去除膜沉积物，通过排气管将蚀刻剂从衬底处理室排出并排入下游等离子体装置，并在下游等离子体装置内形成等离子体; 然后（ii）停止蚀刻剂的流动，关闭等离子体，并将吹扫气体流入衬底处理室。

10. 发明授权

US06566278B1 Method for densification of CVD carbon-doped silicon oxide films through UV irradiation 有权
标题翻译：通过UV照射使CVD碳掺杂氧化硅膜致密化的方法
公开(公告)号：US06566278B1
公开(公告)日：2003-05-20
申请号：US09648289
申请日：2000-08-24
申请人： Keith R. Harvey , Tian-Hoe Lim , Li-Qun Xia
发明人： Keith R. Harvey , Tian-Hoe Lim , Li-Qun Xia
IPC分类号： H01L21283
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02211 , H01L21/02271 , H01L21/02348 , H01L21/31633 , H01L21/76825 , H01L21/76828
摘要： Carbon-doped silicon oxide films (SiCxOy) produced by CVD of an organosilane gas containing at least one silicon carbon bond, are rapidly densified by exposure to ultraviolet radiation. UV radiation exposure disrupts undesirable chemical bonds (such as Si—OH) present in the carbon-doped silicon oxide following deposition, replacing these bonds with more desirable chemical bonds characteristic of an ordered silicon oxide lattice. As a result of radiation exposure and the chemical bond replacement, gases such as water vapor are evolved and removed, producing a densified and stable carbon-doped silicon oxide film. Densification utilizing ultraviolet radiation is particularly useful because softness and fragility of freshly-deposited (SiCxOy) films may preclude insertion and removal of coated substrates from conventional batch loaded thermal annealing chambers.
摘要翻译：通过含有至少一个硅碳键的有机硅烷气体CVD生产的碳掺杂氧化硅膜（SiCxOy）通过暴露于紫外线辐射而迅速致密化。紫外辐射暴露破坏沉积后存在于碳掺杂氧化硅中的不期望的化学键（例如Si-OH），用有序氧化硅晶格特征的更理想的化学键代替这些键。作为辐射暴露和化学键置换的结果，放出并除去诸如水蒸气的气体，产生致密和稳定的碳掺杂氧化硅膜。利用紫外线辐射的致密特别有用，因为新沉积（SiCxOy）膜的柔软性和脆性可能妨碍从常规的批量加载热退火室中插入和除去涂覆的基材。

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