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1. 发明申请

WO2008076408A1 SHOWERHEAD ELECTRODE ASSEMBLY WITH GAS FLOW MODIFICATION FOR EXTENDED ELECTRODE LIFE 审中-公开
标题翻译：用于延长电极寿命的喷淋电极组件
公开(公告)号：WO2008076408A1
公开(公告)日：2008-06-26
申请号：PCT/US2007/025730
申请日：2007-12-17
申请人： LAM RESEARCH CORPORATION , AUGUSTINO, Jason , DE LA LLERA, Anthony , RONNE, Allan K. , KIM, Jaehyun , DHINDSA, Rajinder , WANG, Yen-Kun , ULLAL, Saurabh J. , NORELL, Anthony J. , COMENDANT, Keith , DENTY, William M., Jr.
发明人： AUGUSTINO, Jason , DE LA LLERA, Anthony , RONNE, Allan K. , KIM, Jaehyun , DHINDSA, Rajinder , WANG, Yen-Kun , ULLAL, Saurabh J. , NORELL, Anthony J. , COMENDANT, Keith , DENTY, William M., Jr.
IPC分类号： H01L21/3065 , C23C16/505 , H01L21/205
CPC分类号： H01L21/67069 , C23C16/45565 , C23C16/45582 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01L21/67017
摘要： A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.
摘要翻译：提供了一种用于等离子体处理装置的喷头电极组件。喷头电极组件包括附接到第二构件的第一构件。第一和第二构件具有流体连通的第一和第二气体通道。当处理气体流过气体通道时，跨越第一和第二气体通道产生总压降。跨越第二气体通道的总压降的一小部分大于跨越第一气体通道的总压降的一部分。

2. 发明申请

WO2008048543A1 UPPER ELECTRODE BACKING MEMBER WITH PARTICLE REDUCING FEATURES 审中-公开
标题翻译：具有颗粒减少特性的上电极背部构件
公开(公告)号：WO2008048543A1
公开(公告)日：2008-04-24
申请号：PCT/US2007/021989
申请日：2007-10-16
申请人： LAM RESEARCH CORPORATION , DE LA LLERA, Anthony , RONNE, Allan, K. , KIM, Jaehyun , AUGUSTINO, Jason , DHINDSA, Rajinder , WANG, Yen-Kun , ULLAL, Saurabh, J. , NORELL, Anthony, J. , COMENDANT, Keith , DENTY, Jr., William
发明人： DE LA LLERA, Anthony , RONNE, Allan, K. , KIM, Jaehyun , AUGUSTINO, Jason , DHINDSA, Rajinder , WANG, Yen-Kun , ULLAL, Saurabh, J. , NORELL, Anthony, J. , COMENDANT, Keith , DENTY, Jr., William
IPC分类号： H01L21/205 , H01L21/203
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译：等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

3. 发明申请

WO2009048517A2 APPARATUS FOR MEASURING DIELECTRIC PROPERTIES OF PARTS 审中-公开
标题翻译：用于测量部件电介质性能的装置
公开(公告)号：WO2009048517A2
公开(公告)日：2009-04-16
申请号：PCT/US2008/011319
申请日：2008-09-30
申请人： LAM RESEARCH CORPORATION , KIM, Jaehyun , SATO, Arthur, H. , COMENDANT, Keith , LIU, Qing , WU, Feiyang
发明人： KIM, Jaehyun , SATO, Arthur, H. , COMENDANT, Keith , LIU, Qing , WU, Feiyang
IPC分类号： H01L21/66
CPC分类号： G01N27/04 , G01R27/2623 , Y10T29/49117
摘要： A chamber formed from an electrically conductive material is connected to a ground potential. A hot electrode formed from an electrically conductive material is disposed within the chamber in a substantially horizontal orientation and is physically separated from the chamber. The hot electrode includes a top surface defined to support a part to be measured. A radiofrequency (RF) transmission rod is connected to extend from a bottom surface of the hot electrode through an opening in a bottom of the chamber and be physically separated from the chamber. The RF transmission rod is defined to transmit RF power from a conductor plate in an electrical components housing to the hot electrode. An upper electrode formed from an electrically conductive material is disposed within the chamber in a substantially horizontal orientation. The upper electrode is electrically connected to the chamber and is defined to be movable in a vertical direction.
摘要翻译：由导电材料形成的腔室连接到地电位。由导电材料形成的热电极以大致水平的方向设置在腔室内，并且与腔室物理分离。热电极包括限定为支撑要测量的部分的顶表面。射频（RF）传输杆被连接以从热电极的底表面延伸通过腔室的底部中的一个开口，并与腔室物理分离。 RF传输杆被定义为将RF功率从电气部件壳体中的导体板传递到热电极。由导电材料形成的上电极以大致水平的方向设置在腔室内。上电极电连接到腔室并被限定为可在垂直方向上移动。

4. 发明申请

WO2013042027A2 THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：具有用于半导体加工的平面热区的热板
公开(公告)号：WO2013042027A2
公开(公告)日：2013-03-28
申请号：PCT/IB2012/054903
申请日：2012-09-17
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG , GAFF, Keith, William , COMENDANT, Keith , RICCI, Anthony
发明人： GAFF, Keith, William , COMENDANT, Keith , RICCI, Anthony
IPC分类号： H01L21/30 , H05B3/68 , H01C17/02
CPC分类号： F25B21/04 , H01L21/0201 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L35/34 , Y10T29/49083 , Y10T29/49165
摘要： A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
摘要翻译：一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。每个平面热区使用至少一个珀耳帖装置作为热电元件。其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

5. 发明申请

WO2006073947A2 APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE 审中-公开
标题翻译：用于空间和时间控制温度在基板上的装置
公开(公告)号：WO2006073947A2
公开(公告)日：2006-07-13
申请号：PCT/US2005/047109
申请日：2005-12-13
申请人： LAM RESEARCH CORPORATION , RICCI, Anthony, J. , COMENDANT, Keith , TAPPAN, James
发明人： RICCI, Anthony, J. , COMENDANT, Keith , TAPPAN, James
IPC分类号： H01L21/00
CPC分类号： H01L21/6833 , H01J37/32724 , H01J2237/20 , H01L21/67103 , H01L21/6831 , H01L2221/683 , H05B3/26 , Y10T29/49146 , Y10T29/53252 , Y10T279/23
摘要： An apparatus for control of a temperature of a substrate has a temperaturecontrolled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.
摘要翻译：用于控制基板的温度的装置具有温度控制的基座，加热器，金属板，介电材料层。加热器在与金属板电绝缘的同时热耦合到金属板的下侧。第一层粘合剂材料将金属板和加热器粘合到温度受控底座的顶部表面。该粘合剂层具有机械柔性，并具有设计用于平衡加热器的热能和外部工艺的物理性能，以在设备的表面上提供期望的温度图案。第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。该第二粘合剂层具有设计成将期望的温度图案转移到设备的表面的物理性质。介电材料层形成静电夹持机构并支撑基板。

6. 发明申请

WO2011049620A2 HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：加热板用于半导体加工的平面加热区
公开(公告)号：WO2011049620A2
公开(公告)日：2011-04-28
申请号：PCT/US2010/002794
申请日：2010-10-20
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet , GAFF, Keith , BENJAMIN, Neil , COMENDANT, Keith
发明人： SINGH, Harmeet , GAFF, Keith , BENJAMIN, Neil , COMENDANT, Keith
IPC分类号： H01L21/68
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

7. 发明申请

WO2013042030A1 HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：具有二极管平面加热器的加热板用于半导体加工
公开(公告)号：WO2013042030A1
公开(公告)日：2013-03-28
申请号：PCT/IB2012/054911
申请日：2012-09-17
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG , GAFF, Keith William , COMENDANT, Keith
发明人： GAFF, Keith William , COMENDANT, Keith
IPC分类号： C23F1/00
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。每个平面加热器区域使用至少一个二极管作为加热器元件。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

8. 发明申请

WO2007011613A2 METHOD OF PROTECTING A BOND LAYER IN A SUBSTRATE SUPPORT ADAPTED FOR USE IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：适用于等离子体处理系统的基板支撑中保护粘结层的方法
公开(公告)号：WO2007011613A2
公开(公告)日：2007-01-25
申请号：PCT/US2006/027090
申请日：2006-07-13
申请人： LAM RESEARCH CORPORATION , RICCI, Anthony , TAPPAN, Jim , COMENDANT, Keith
发明人： RICCI, Anthony , TAPPAN, Jim , COMENDANT, Keith
IPC分类号： B05D3/02
CPC分类号： H01L21/76251 , H01L21/68757 , H01L21/68785
摘要： A method of protecting a bond layer in a substrate support adapted for use in a plasma processing system. The method includes the steps of attaching an upper member of a substrate support to a lower member of a substrate support with a bonding material. An adhesive is applied to an outer periphery of the upper member and to an upper periphery of the lower member, and a protective ring is positioned around the outer periphery of the upper member and the upper periphery of the lower member. The protective ring is originally fabricated with dimensions that provide mechanical stability and workability. The protective ring is then machined to an exact set of final dimensions consistent with the design of the substrate support application.
摘要翻译：一种保护适于在等离子体处理系统中使用的衬底支撑体中的接合层的方法。该方法包括以下步骤：利用接合材料将衬底支撑件的上部构件附接到衬底支撑件的下部构件。将粘合剂施加到上部构件的外周和下部构件的上周边，并且保护环围绕上部构件的外周和下部构件的上周边定位。保护环最初由具有提供机械稳定性和可加工性的尺寸制成。然后将保护环加工成与衬底支撑应用的设计一致的最终尺寸的精确组合。

9. 发明申请

WO2006011991A2 APPARATUS FOR AN OPTIMIZED PLASMA CHAMBER TOP PIECE 审中-公开
标题翻译：优化等离子体顶板的设备
公开(公告)号：WO2006011991A2
公开(公告)日：2006-02-02
申请号：PCT/US2005/020968
申请日：2005-06-14
申请人： LAM RESEARCH CORPORATION , SHARPLESS, Leonard, J. , COMENDANT, Keith
发明人： SHARPLESS, Leonard, J. , COMENDANT, Keith
IPC分类号： C23C16/00
CPC分类号： H01J37/32522 , H01J37/321
摘要： A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.
摘要翻译：描述了一种用于处理衬底的等离子体处理系统。等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。等离子体处理系统还包括被配置为产生电磁场以产生用于处理衬底的等离子体的感应线圈; 以及联接到所述底部件的优化顶部件，所述顶部件还构造成用于加热和冷却系统。其中，加热和冷却系统通过优化的顶部部件基本上与电磁场屏蔽，并且优化的顶部部件可以基本上由单个人操作。

10. 发明申请

WO2011081645A2 ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY 审中-公开
标题翻译：调整基板温度以提高光盘的均匀性
公开(公告)号：WO2011081645A2
公开(公告)日：2011-07-07
申请号：PCT/US2010/003149
申请日：2010-12-13
申请人： LAM RESEARCH CORPORATION , GAFF, Keith William , SINGH, Harmeet , COMENDANT, Keith , VAHEDI, Vahid
发明人： GAFF, Keith William , SINGH, Harmeet , COMENDANT, Keith , VAHEDI, Vahid
IPC分类号： H01L21/3065
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Abstract A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译：摘要一种等离子体蚀刻系统，其具有具有多个可独立控制的加热器区域的基板支撑组件。等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。

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