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1. 发明申请

WO2011081645A2 ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY 审中-公开
标题翻译：调整基板温度以提高光盘的均匀性
公开(公告)号：WO2011081645A2
公开(公告)日：2011-07-07
申请号：PCT/US2010/003149
申请日：2010-12-13
申请人： LAM RESEARCH CORPORATION , GAFF, Keith William , SINGH, Harmeet , COMENDANT, Keith , VAHEDI, Vahid
发明人： GAFF, Keith William , SINGH, Harmeet , COMENDANT, Keith , VAHEDI, Vahid
IPC分类号： H01L21/3065
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Abstract A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译：摘要一种等离子体蚀刻系统，其具有具有多个可独立控制的加热器区域的基板支撑组件。等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。

2. 发明申请

WO2008049024A1 METHODS AND APPARATUS FOR TUNING A SET OF PLASMA PROCESSING STEPS 审中-公开
标题翻译：用于调整一套等离子体处理步骤的方法和装置
公开(公告)号：WO2008049024A1
公开(公告)日：2008-04-24
申请号：PCT/US2007/081682
申请日：2007-10-17
申请人： LAM RESEARCH CORPORATION , VAHEDI, Vahid , DAUGHERTY, John E , SINGH, Harmeet , CHEN, Anthony
发明人： VAHEDI, Vahid , DAUGHERTY, John E , SINGH, Harmeet , CHEN, Anthony
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围，其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。

3. 发明申请

WO2011056484A2 METHOD AND APPARATUS OF HALOGEN REMOVAL 审中-公开
标题翻译：去除卤素的方法和设备
公开(公告)号：WO2011056484A2
公开(公告)日：2011-05-12
申请号：PCT/US2010/053858
申请日：2010-10-22
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet , SANT, Sanket , CHOU, Shang-I , VAHEDI, Vahid , CASAES, Raphael , RAMACHANDRAN, Seetharaman
发明人： SINGH, Harmeet , SANT, Sanket , CHOU, Shang-I , VAHEDI, Vahid , CASAES, Raphael , RAMACHANDRAN, Seetharaman
IPC分类号： H01L21/302 , H01L21/677
CPC分类号： H01L21/02057 , H01L21/67017 , H01L21/67115 , H01L21/6719 , H01L21/67201 , H01L21/67207
摘要： A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H 2 O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.
摘要翻译：将晶片提供到入口负载锁定室中。在入口负载锁定室中产生真空。晶圆被运送到加工工具。晶片在处理室中处理以提供处理后的晶片，其中处理形成卤素残余物。在处理晶片之后在处理室中提供脱气步骤。处理后的晶片被转移到脱气室中。处理后的晶片在除气室中用UV光和包含臭氧，氧气或H 2 O中的至少一种的气流处理。气体流动停止。紫外线停止。处理后的晶圆从脱气室中取出。

4. 发明申请

WO2006036753A2 METHODS AND APPARATUS FOR TUNING A SET OF PLASMA PROCESSING STEPS 审中-公开
标题翻译：用于调整一套等离子体处理步骤的方法和装置
公开(公告)号：WO2006036753A2
公开(公告)日：2006-04-06
申请号：PCT/US2005/034034
申请日：2005-09-21
申请人： LAM RESEARCH CORPORATION , VAHEDI, Vahid , DAUGHERTY, John, E , SINGH, Harmeet , CHEN, Anthony
发明人： VAHEDI, Vahid , DAUGHERTY, John, E , SINGH, Harmeet , CHEN, Anthony
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642 , H01L21/32136
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围，其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。

5. 发明申请

WO2003034463A2 TUNABLE MULTI-ZONE GAS INJECTION SYSTEM 审中-公开
标题翻译：可控多区域气体注入系统
公开(公告)号：WO2003034463A2
公开(公告)日：2003-04-24
申请号：PCT/US2002/032057
申请日：2002-10-09
申请人： LAM RESEARCH CORPORATION , COOPERBERG, David, J. , VAHEDI, Vahid , RATTO, Douglas , SINGH, Harmeet , BENJAMIN, Neil
发明人： COOPERBERG, David, J. , VAHEDI, Vahid , RATTO, Douglas , SINGH, Harmeet , BENJAMIN, Neil
IPC分类号： H01J37/32
CPC分类号： C23C16/45574 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J2237/3323 , H01J2237/3344
摘要： A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.
摘要翻译：一种用于等离子体处理系统的可调谐多区域注入系统，用于诸如半导体晶片的衬底的等离子体处理。该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，固定到或可移除地安装在电介质窗口的开口中，气体注射器包括多个气体出口，其以可调节的流速向腔室的多个区域供应处理气体，以及RF能量源，例如平面或非平面螺旋线圈，其中将RF能量感应耦合通过电介质构件并进入腔室，以将处理气体激励成等离子体状态。喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。

6. 发明申请

WO2007149210A2 EDGE GAS INJECTION FOR CRITICAL DIMENSION UNIFORMITY IMPROVEMENT 审中-公开
标题翻译：边缘气体注入关键尺寸均匀性改进
公开(公告)号：WO2007149210A2
公开(公告)日：2007-12-27
申请号：PCT/US2007/013159
申请日：2007-06-05
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet , COOPERBERG, David , VAHEDI, Vahid
发明人： SINGH, Harmeet , COOPERBERG, David , VAHEDI, Vahid
IPC分类号： C23F1/00 , B44C1/22 , H01L21/302
CPC分类号： H01L21/6708 , H01J37/321 , H01J37/3244 , H01J2237/334 , H01L21/3065 , H01L21/32137
摘要： A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.
摘要翻译：蚀刻具有改善的临界尺寸均匀性的半导体衬底的方法包括在电感耦合等离子体蚀刻室中的衬底支撑件上支撑半导体衬底; 向所述半导体衬底上的中心区域提供第一蚀刻气体; 将包含至少一种含硅气体的第二气体供应到围绕所述中心区域的所述半导体衬底上的周边区域，其中所述第二气体中的硅浓度大于所述第一蚀刻气体中的硅浓度; 从第一蚀刻气体和第二气体产生等离子体; 并且等离子体蚀刻半导体衬底的暴露表面。

7. 发明申请

WO2004079783A2 METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS 审中-公开
标题翻译：改进配置文件控制和双层门控应用中的N / P加载的方法
公开(公告)号：WO2004079783A2
公开(公告)日：2004-09-16
申请号：PCT/US2004/005944
申请日：2004-02-26
申请人： LAM RESEARCH CORPORATION , DEL PUPPO, Hélène , LIN, Frank , LEE, Chris , VAHEDI, Vahid , KAMP, Thomas, A. , MILLER, Alan, J.
发明人： DEL PUPPO, Hélène , LIN, Frank , LEE, Chris , VAHEDI, Vahid , KAMP, Thomas, A. , MILLER, Alan, J.
IPC分类号： H01L
CPC分类号： H01L21/32137
摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
摘要翻译：提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。该方法开始于限定保护待蚀刻的多晶硅膜的图案。然后，产生等离子体。接下来，蚀刻基本上未被保护的多晶硅膜。然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

8. 发明申请

WO2004003963A2 PLASMA PROCESSOR WITH ELECTRODE SIMULTANEOUSLY RESPONSIVE TO PLURAL FREQUENCIES 审中-公开
标题翻译：等离子体处理器与电极同时响应多重频率
公开(公告)号：WO2004003963A2
公开(公告)日：2004-01-08
申请号：PCT/US2003/019366
申请日：2003-06-20
申请人： LAM RESEARCH CORPORATION , VAHEDI, Vahid , LOEWENHARDT, Peter , ELLINGBOE, Bert , KUTHI, Andy , FISCHER, Andreas
发明人： VAHEDI, Vahid , LOEWENHARDT, Peter , ELLINGBOE, Bert , KUTHI, Andy , FISCHER, Andreas
IPC分类号： H01J37/00
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.
摘要翻译：处理工件的真空室中的等离子体被等离子体约束体积界定，所述等离子体约束体积包括同时响应于第一和第二RF频率下的功率的第一电极与DC接地的第二电极之间的区域。直流接地延长部分与第一电极基本对齐。第一频率的大部分功率耦合到包括第一和第二电极但不包括延伸的路径，而第二频率的大部分功率耦合到包括第一电极和延伸的路径，而不包括第二频率电极。当施加到第一电极时，改变第一和第二频率处的相对功率，控制第一电极的DC偏置电压。

9. 发明申请

WO2003085721A3 VARIABLE TEMPERATURE PROCESSES FOR TUNABLE ELECTROSTATIC CHUCK 审中-公开
公开(公告)号：WO2003085721A3
公开(公告)日：2003-10-16
申请号：PCT/US2003/009153
申请日：2003-03-25
申请人： LAM RESEARCH CORPORATION , KAMP, Tom, A. , GOTTSCHO, Richard , LEE, Steve , LEE, Chris , YAMAGUCHI, Yoko , VAHEDI, Vahid , EPPLER, Aaron
发明人： KAMP, Tom, A. , GOTTSCHO, Richard , LEE, Steve , LEE, Chris , YAMAGUCHI, Yoko , VAHEDI, Vahid , EPPLER, Aaron
IPC分类号： H01L21/324
摘要： An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

10. 发明申请

WO2003085721A2 VARIABLE TEMPERATURE PROCESSES FOR TUNABLE ELECTROSTATIC CHUCK 审中-公开
标题翻译：可调式静电卡盘的变温过程
公开(公告)号：WO2003085721A2
公开(公告)日：2003-10-16
申请号：PCT/US2003/009153
申请日：2003-03-25
申请人： LAM RESEARCH CORPORATION , KAMP, Tom, A. , GOTTSCHO, Richard , LEE, Steve , LEE, Chris , YAMAGUCHI, Yoko , VAHEDI, Vahid , EPPLER, Aaron
发明人： KAMP, Tom, A. , GOTTSCHO, Richard , LEE, Steve , LEE, Chris , YAMAGUCHI, Yoko , VAHEDI, Vahid , EPPLER, Aaron
IPC分类号： H01L21/324
CPC分类号： H01L21/67248 , H01L21/31116 , H01L21/67069 , H01L21/6831 , H01L21/76804
摘要： An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.
摘要翻译：用于蚀刻晶片的蚀刻处理器包括用于保持晶片的卡盘和用于报告晶片的温度的温度传感器。卡盘包括一个由温度控制系统控制的加热器。温度传感器可操作地连接至温度控制系统，以将卡盘的温度维持在可选择的设定点温度。选择第一设定点温度和第二设定点温度。晶片放在卡盘上并设定到第一设定点温度。晶片然后在第一设定点温度下处理第一时间段并在第二设定点温度下处理第二时间段。

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