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1. 发明申请

WO2013042027A2 THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：具有用于半导体加工的平面热区的热板
公开(公告)号：WO2013042027A2
公开(公告)日：2013-03-28
申请号：PCT/IB2012/054903
申请日：2012-09-17
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG , GAFF, Keith, William , COMENDANT, Keith , RICCI, Anthony
发明人： GAFF, Keith, William , COMENDANT, Keith , RICCI, Anthony
IPC分类号： H01L21/30 , H05B3/68 , H01C17/02
CPC分类号： F25B21/04 , H01L21/0201 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L35/34 , Y10T29/49083 , Y10T29/49165
摘要： A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
摘要翻译：一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。每个平面热区使用至少一个珀耳帖装置作为热电元件。其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

2. 发明申请

WO2011049620A3 HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：带有平面加热区的加热板用于半导体加工
公开(公告)号：WO2011049620A3
公开(公告)日：2011-11-03
申请号：PCT/US2010002794
申请日：2010-10-20
申请人： LAM RES CORP , SINGH HARMEET , GAFF KEITH , BENJAMIN NEIL , COMENDANT KEITH
发明人： SINGH HARMEET , GAFF KEITH , BENJAMIN NEIL , COMENDANT KEITH
IPC分类号： H01L21/68
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：用于半导体等离子体处理设备中的基板支撑组件的加热板包括以可缩放多路复用布局布置的多个独立可控的平面加热器区域以及用于独立地控制和驱动平面加热器区域的电子设备。其中结合有加热板的基板支撑组件包括静电夹持电极和温控基板。用于制造加热板的方法包括将具有平面加热器区域的陶瓷或聚合物片，电源线，电力返回线和过孔接合在一起。

3. 发明申请

WO2011081645A3 ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY 审中-公开
标题翻译：调整基片温度以改善CD均匀度
公开(公告)号：WO2011081645A3
公开(公告)日：2011-10-20
申请号：PCT/US2010003149
申请日：2010-12-13
申请人： LAM RES CORP , GAFF KEITH WILLIAM , SINGH HARMEET , COMENDANT KEITH , VAHEDI VAHID
发明人： GAFF KEITH WILLIAM , SINGH HARMEET , COMENDANT KEITH , VAHEDI VAHID
IPC分类号： H01L21/3065
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Abstract A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译：摘要一种等离子体蚀刻系统，具有带多个可独立控制的加热器区域的基板支撑组件等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，使得可以补偿关键器件参数的预蚀刻和/或蚀刻后不均匀性。

4. 发明申请

WO2013042027A3 THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：具有用于半导体加工的平面热区的热板
公开(公告)号：WO2013042027A3
公开(公告)日：2015-06-25
申请号：PCT/IB2012054903
申请日：2012-09-17
申请人： LAM RES CORP , LAM RES AG , GAFF KEITH WILLIAM , COMENDANT KEITH , RICCI ANTHONY
发明人： GAFF KEITH WILLIAM , COMENDANT KEITH , RICCI ANTHONY
IPC分类号： H01L21/30 , H01C17/02 , H05B3/68
CPC分类号： F25B21/04 , H01L21/0201 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L35/34 , Y10T29/49083 , Y10T29/49165
摘要： A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
摘要翻译：一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。每个平面热区使用至少一个珀耳帖装置作为热电元件。其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

5. 发明申请

WO2011081645A2 ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY 审中-公开
标题翻译：调整基板温度以提高光盘的均匀性
公开(公告)号：WO2011081645A2
公开(公告)日：2011-07-07
申请号：PCT/US2010/003149
申请日：2010-12-13
申请人： LAM RESEARCH CORPORATION , GAFF, Keith William , SINGH, Harmeet , COMENDANT, Keith , VAHEDI, Vahid
发明人： GAFF, Keith William , SINGH, Harmeet , COMENDANT, Keith , VAHEDI, Vahid
IPC分类号： H01L21/3065
CPC分类号： H01J37/20 , H01L21/67248 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Abstract A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.
摘要翻译：摘要一种等离子体蚀刻系统，其具有具有多个可独立控制的加热器区域的基板支撑组件。等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。

6. 发明申请

WO2010062345A2 LOWER ELECTRODE ASSEMBLY OF PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：等离子体处理室的下部电极组件
公开(公告)号：WO2010062345A2
公开(公告)日：2010-06-03
申请号：PCT/US2009/005857
申请日：2009-10-29
申请人： LAM RESEARCH CORPORATION , AUGUSTINO, Jason , CHAU, Quan , GAFF, Keith William , HA, Hanh Tuong , RICHARDSON, Brett C. , SINGH, Harmeet
发明人： AUGUSTINO, Jason , CHAU, Quan , GAFF, Keith William , HA, Hanh Tuong , RICHARDSON, Brett C. , SINGH, Harmeet
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01J37/20 , H01J37/32091 , H01J37/32541 , H01J37/3255 , H01J37/32642 , H01J37/32715
摘要： A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line.
摘要翻译：用于等离子体处理室中的下电极组件包括金属底座和上边缘环和下边缘环。金属基座包括钎焊在一起并在基座的下侧表面上形成钎焊线的金属板，从下侧表面水平向内延伸的边缘环支撑表面以及边缘环支撑表面上方的上侧表面。上边缘环包括安装在边缘环支撑表面上的下表面，并且下边缘环围绕底座的下侧表面，在上边缘环和下边缘环的相对表面之间以及下边缘环与外边缘之间具有间隙基地周围。该间隙的总间隙长度与平均间隙宽度的纵横比足以阻止钎焊线处的电弧。

7. 发明申请

WO2013042030A1 HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：具有二极管平面加热器的加热板用于半导体加工
公开(公告)号：WO2013042030A1
公开(公告)日：2013-03-28
申请号：PCT/IB2012/054911
申请日：2012-09-17
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG , GAFF, Keith William , COMENDANT, Keith
发明人： GAFF, Keith William , COMENDANT, Keith
IPC分类号： C23F1/00
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。每个平面加热器区域使用至少一个二极管作为加热器元件。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

8. 发明申请

WO2008033234A3 IN-SITU WAFER TEMPERATURE MEASUREMENT AND CONTROL 审中-公开
标题翻译：现场温度测量和控制
公开(公告)号：WO2008033234A3
公开(公告)日：2008-07-10
申请号：PCT/US2007019231
申请日：2007-08-30
申请人： LAM RES CORP , GAFF KEITH
发明人： GAFF KEITH
IPC分类号： G01J5/08 , G01K11/00
CPC分类号： H01L21/67248 , G01K11/20
摘要： Broadly speaking, the embodiments of the present invention fill the need by providing in-situ wafer temperature measuring method and apparatus. The in-situ substrate temperature measuring method and apparatus provide instant wafer temperature information to allow for continuous monitoring of the etching process. The method and apparatus also allow for instant substrate temperature control to tighten wafer-to-wafer and chamber-to- chamber process distribution. An exemplary cluster tool system is provided. The cluster tool system includes a substrate holding station for holding a substrate capable of emitting signals indicative of substrate temperature, and a processing chamber, the processing chamber being configured to receive the substrate from the substrate holding station and to run.through an active process operation when the substrate is in the processing chamber. The cluster tool system also includes a signal detector for detecting the signals emitted by the substrate when the processing chamber runs through the active process operation, the signal detector being configured to collect the emitted signals indicative of the substrate temperature.
摘要翻译：广义地说，本发明的实施例通过提供原位晶片温度测量方法和装置来满足需要。原位衬底温度测量方法和装置提供即时晶片温度信息以允许连续监测蚀刻工艺。该方法和装置还允许即时衬底温度控制以紧固晶片到晶片和腔室到室的过程分布。提供了一种示例性的集群工具系统。集群工具系统包括：用于保持能够发出指示衬底温度的信号的衬底的衬底保持站;以及处理室，所述处理室被配置为从衬底保持站接收衬底并通过有源工艺操作当衬底处于处理室中时。所述集群工具系统还包括信号检测器，用于当所述处理室经过所述有效过程操作时检测由所述衬底发射的信号，所述信号检测器被配置为收集指示所述衬底温度的发射信号。

9. 发明申请

WO2008033234A2 IN-SITU WAFER TEMPERATURE MEASUREMENT AND CONTROL 审中-公开
标题翻译：原地晶片温度测量和控制
公开(公告)号：WO2008033234A2
公开(公告)日：2008-03-20
申请号：PCT/US2007/019231
申请日：2007-08-30
申请人： LAM RESEARCH CORPORATION , GAFF, Keith
发明人： GAFF, Keith
IPC分类号： H01L21/66
CPC分类号： H01L21/67248 , G01K11/20
摘要： Broadly speaking, the embodiments of the present invention fill the need by providing in-situ wafer temperature measuring method and apparatus. The in-situ substrate temperature measuring method and apparatus provide instant wafer temperature information to allow for continuous monitoring of the etching process. The method and apparatus also allow for instant substrate temperature control to tighten wafer-to-wafer and chamber-to- chamber process distribution. An exemplary cluster tool system is provided. The cluster tool system includes a substrate holding station for holding a substrate capable of emitting signals indicative of substrate temperature, and a processing chamber, the processing chamber being configured to receive the substrate from the substrate holding station and to run.through an active process operation when the substrate is in the processing chamber. The cluster tool system also includes a signal detector for detecting the signals emitted by the substrate when the processing chamber runs through the active process operation, the signal detector being configured to collect the emitted signals indicative of the substrate temperature.
摘要翻译：一般而言，本发明的实施例通过提供原位晶片温度测量方法和装置来满足需要。原位衬底温度测量方法和设备提供即时晶片温度信息以允许连续监测蚀刻过程。该方法和装置还允许即时衬底温度控制以收紧晶片 - 晶片和室 - 室处理分布。提供了示例性的群集工具系统。该群集工具系统包括用于保持能够发射指示衬底温度的信号的衬底的衬底保持站和处理室，处理室被配置为从衬底保持站接收衬底并且通过主动处理操作当衬底在处理室中时。该群集工具系统还包括信号检测器，用于当处理室运行通过有效处理操作时检测由衬底发射的信号，信号检测器被配置为收集指示衬底温度的发射信号。

10. 发明申请

WO2007037983A3 APPARATUS FOR DETERMINING A TEMPERATURE OF A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：用于确定基材温度的装置及其方法
公开(公告)号：WO2007037983A3
公开(公告)日：2008-01-24
申请号：PCT/US2006035620
申请日：2006-09-12
申请人： LAM RES CORP , GAFF KEITH , BENJAMIN NEIL MARTIN PAUL
发明人： GAFF KEITH , BENJAMIN NEIL MARTIN PAUL
IPC分类号： G01K11/00
CPC分类号： G01K11/20 , G01K11/3213
摘要： An apparatus for measuring a temperature of a substrate is disclosed. The apparatus includes a phosphor material in thermal contact to the substrate, the phosphor material producing a fluorescent response in a first wavelength range when exposed to an electromagnetic radiation in a second wavelength range, the fluorescent response decaying at a decay rate that is related to a temperature of the phosphor material, and the phosphor material producing a first set of non volatile byproducts when exposed to a plasma. The apparatus also includes a barrier window positioned between the phosphor material and a plasma, wherein the barrier window allows at least a portion of the first wavelength and the second wavelength to be transmitted, and wherein the barrier window produces a second set of non volatile byproducts that is less than the first set of non volatile byproducts when exposed to the plasma, wherein when the electromagnetic radiation is transmitted to the phosphor material through the barrier window, the temperature is determined from the decay rate of the fluorescent response.
摘要翻译：公开了一种用于测量衬底温度的装置。该装置包括与衬底热接触的磷光体材料，当暴露于第二波长范围内的电磁辐射时，荧光体材料在第一波长范围内产生荧光响应，荧光响应以与荧光体材料的温度，以及当暴露于等离子体时产生第一组非挥发性副产物的荧光体材料。该设备还包括位于荧光体材料和等离子体之间的屏障窗口，其中屏障窗口允许第一波长和第二波长的至少一部分被传输，并且其中屏障窗口产生第二组非挥发性副产物当暴露于等离子体时，其小于第一组非挥发性副产物，其中当电磁辐射通过阻挡窗口传输到荧光体材料时，根据荧光响应的衰减速率来确定温度。

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