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1. 发明申请

US20110222289A1 OPTICAL ELEMENT, LASER BEAM OSCILLATION DEVICE AND LASER BEAM AMPLIFYING DEVICE 审中-公开
标题翻译：光学元件，激光束振荡器件和激光束放大器件
公开(公告)号：US20110222289A1
公开(公告)日：2011-09-15
申请号：US13122857
申请日：2009-09-14
申请人： Koei Yamamoto , Yoichi Kawada , Shingo Oishi , Toshiharu Moriguchi , Shigeru Sakamoto , Haruyasu Ito , Masatoshi Fujimoto , Hironori Takahashi , Kenshi Fukumitsu , Katsumi Shibayama , Shinichiro Aoshima , Atsuko Aoshima
发明人： Koei Yamamoto , Yoichi Kawada , Shingo Oishi , Toshiharu Moriguchi , Shigeru Sakamoto , Haruyasu Ito , Masatoshi Fujimoto , Hironori Takahashi , Kenshi Fukumitsu , Katsumi Shibayama , Shinichiro Aoshima , Atsuko Aoshima
IPC分类号： G02B27/20 , G02B5/00
CPC分类号： G02B17/004 , G02B27/0944 , G02B27/0977 , H01S3/005
摘要： An optical element 20A which is composed of a light transmission characteristic medium, that has a refractive index higher than a refractive index of air, the optical element causes an incident laser beam to be propagated inside while reflecting the laser beam by a wall surface 20a a plurality of times, the optical element includes an incident window 21 which is located in a part of the wall surface 20a, that is for allowing the laser beam to be incident, an emitting window 22 which is located in a part of the wall surface 20a, that is for allowing the laser beam propagated inside to be emit, and wavelength dispersion compensating units 31 and 32 which are integrally located in parts of the medium, the wavelength dispersion compensating units compensate for wavelength dispersion by causing the laser beam to be transmitted or reflected at least twice.
摘要翻译：由光透射特性介质构成的光学元件20A具有高于空气的折射率的折射率，所述光学元件使入射的激光束在内部传播，同时通过壁面20aa反射激光束多次，光学元件包括入射窗21，其位于壁表面20a的一部分中，用于允许激光束入射;位于壁表面20a的一部分中的发射窗22 ，即允许内部传播的激光束被发射，以及整体地位于介质的一部分中的波长色散补偿单元31和32，波长色散补偿单元通过使激光束透射来补偿波长色散，或者反映至少两次。

2. 发明授权

US08947771B2 Optical amplifying device 有权
标题翻译：光放大装置
公开(公告)号：US08947771B2
公开(公告)日：2015-02-03
申请号：US12307080
申请日：2007-07-11
申请人： Koei Yamamoto , Toshiharu Moriguchi , Shingo Oishi , Masatoshi Fujimoto , Shigeru Sakamoto , Hironori Takahashi , Haruyasu Ito , Yoichi Kawada , Shinichiro Aoshima
发明人： Koei Yamamoto , Toshiharu Moriguchi , Shingo Oishi , Masatoshi Fujimoto , Shigeru Sakamoto , Hironori Takahashi , Haruyasu Ito , Yoichi Kawada , Shinichiro Aoshima
IPC分类号： H01S3/081 , H01S3/23 , H01S3/00 , H01S3/02 , H01S3/04 , H01S3/042 , H01S3/06 , H01S3/08 , H01S3/083 , H01S3/0941
CPC分类号： H01S3/2333 , H01S3/0057 , H01S3/027 , H01S3/0407 , H01S3/042 , H01S3/0606 , H01S3/0621 , H01S3/0623 , H01S3/08095 , H01S3/083 , H01S3/09415 , H01S3/2316 , H01S3/2325 , H01S3/235
摘要： The present invention provides an optical amplifying device which can be easily downsized, increased in output, and stabilized. An optical amplifying device 1A includes an optical amplifier 10A and an energy supplier 30. The optical amplifier 10A includes an optical amplifying medium 11 and a transparent medium 12. The energy supplier 30 supplies excitation energy (for example, excitation light) to the optical amplifying medium 11. The optical amplifying medium 11 is supplied with the excitation light to amplify light and output it. To-be-amplified light passes through the transparent medium 12 in the optical amplifying medium 11 a plurality of times. The transparent medium 12 can propagate the to-be-amplified light, for example, zigzag inside.
摘要翻译：本发明提供一种可以容易地小型化，增加输出并稳定的光放大装置。光放大器1A包括光放大器10A和能量供给器30.光放大器10A包括光放大介质11和透明介质12.能量供应器30将激发能（例如激发光）提供给光放大器光放大介质11被提供有激发光以放大光并将其输出。被放大的光通过光放大介质11中的透明介质12多次。透明介质12可以传播被放大的光，例如在里面进行锯齿形。

3. 发明申请

US20100091359A1 OPTICAL AMPLIFYING DEVICE 有权
标题翻译：光学放大器件
公开(公告)号：US20100091359A1
公开(公告)日：2010-04-15
申请号：US12307080
申请日：2007-07-11
申请人： Koei Yamamoto , Toshiharu Moriguchi , Shingo Oishi , Masatoshi Fujimoto , Shigeru Sakamoto , Hironori Takahashi , Haruyasu Ito , Yoichi Kawada , Shinichiro Aoshima
发明人： Koei Yamamoto , Toshiharu Moriguchi , Shingo Oishi , Masatoshi Fujimoto , Shigeru Sakamoto , Hironori Takahashi , Haruyasu Ito , Yoichi Kawada , Shinichiro Aoshima
IPC分类号： H01S3/10
CPC分类号： H01S3/2333 , H01S3/0057 , H01S3/027 , H01S3/0407 , H01S3/042 , H01S3/0606 , H01S3/0621 , H01S3/0623 , H01S3/08095 , H01S3/083 , H01S3/09415 , H01S3/2316 , H01S3/2325 , H01S3/235
摘要： The present invention provides an optical amplifying device which can be easily downsized, increased in output, and stabilized. An optical amplifying device 1A includes an optical amplifier 10A and an energy supplier 30. The optical amplifier 10A includes an optical amplifying medium 11 and a transparent medium 12. The energy supplier 30 supplies excitation energy (for example, excitation light) to the optical amplifying medium 11. The optical amplifying medium 11 is supplied with the excitation light to amplify light and output it. To-be-amplified light passes through the transparent medium 12 in the optical amplifying medium 11 a plurality of times. The transparent medium 12 can propagate the to-be-amplified light, for example, zigzag inside.
摘要翻译：本发明提供一种可以容易地小型化，增加输出并稳定的光放大装置。光放大器1A包括光放大器10A和能量供给器30.光放大器10A包括光放大介质11和透明介质12.能量供应器30将激发能（例如激发光）提供给光放大器光放大介质11被提供有激发光以放大光并将其输出。被放大的光通过光放大介质11中的透明介质12多次。透明介质12可以传播被放大的光，例如在里面进行锯齿形。

4. 发明申请

US20120330568A1 GAS CONCENTRATION CALCULATION DEVICE, GAS CONCENTRATION MEASUREMENT MODULE, AND LIGHT DETECTOR 审中-公开
标题翻译：气体浓度计算装置，气体浓度测量模块和光探测器
公开(公告)号：US20120330568A1
公开(公告)日：2012-12-27
申请号：US13578895
申请日：2011-02-14
申请人： Toshiyuki Izawa , Koei Yamamoto
发明人： Toshiyuki Izawa , Koei Yamamoto
IPC分类号： G06F19/00 , G01J1/04
CPC分类号： G01N21/3504 , G01N21/0303 , G01N21/61
摘要： A gas concentration measuring module (2X) includes a gas cell (10X) configured to form an introduction space (11X) into which a sample gas (50X) is introduced, an infrared light source (21X) disposed at one end of the gas cell (10X), a reference light receiving element (31X) and a signal light receiving element (32X) disposed at the other end of the gas cell (10X) and configured to receive infrared light emitted from the infrared light source (21X), and an inert gas chamber (40X) disposed on an optical path between the infrared light source (21X) and the reference light receiving element (31X) in the introduction space (11X) and in which an inert gas, inert with respect to the infrared light emitted from the infrared light source (21X) is hermetically enclosed. A calculation circuit (3X) calculates a concentration of carbon dioxide in the sample gas (50X) based on a ratio between an energy value of light received by the reference light receiving element (31X) and an energy value of infrared light received by the signal light receiving element (32X) of the gas concentration measuring module (2X).
摘要翻译：气体浓度测量模块（2X）包括：气体电池（10X），被配置为形成引入空气（11X），其中引入样品气体（50X）;红外光源（21X），设置在所述气室的一端（10X），参考光接收元件（31X）和设置在气室（10X）的另一端处的信号光接收元件（32X），并且被配置为接收从红外光源（21X）发射的红外光;以及设置在导入空间（11X）中的红外线光源（21X）和基准光接收元件（31X）之间的光路上的惰性气体室（40X），其中相对于红外线为惰性的惰性气体从红外光源（21X）发射的气密密封。计算电路（3X）基于由参考光接收元件（31X）接收的光的能量值与由信号接收的红外线的能量值之间的比率，计算样品气体（50X）中的二氧化碳浓度气体浓度测量模块（2X）的光接收元件（32X）。

5. 发明申请

US20120256287A1 BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：后置照明固态图像拾取器件
公开(公告)号：US20120256287A1
公开(公告)日：2012-10-11
申请号：US13258696
申请日：2010-03-23
申请人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148
CPC分类号： H01L27/1464 , H01L27/14818 , H01L27/1485
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.
摘要翻译：在背照式固体摄像装置中，包括具有在背面侧具有光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的多个电荷转移电极2，相对于光入射面，在彼此相邻的电荷转移电极2之间形成有用于透射光的多个开口OP。此外，可以在每个电荷转移电极2内部形成用于透射光的多个开口OP。

6. 发明授权

US08624301B2 Back-illuminated solid-state image pickup device 有权
标题翻译：背照式固态摄像装置
公开(公告)号：US08624301B2
公开(公告)日：2014-01-07
申请号：US13258696
申请日：2010-03-23
申请人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148
CPC分类号： H01L27/1464 , H01L27/14818 , H01L27/1485
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.
摘要翻译：在背照式固体摄像装置中，包括具有在背面侧具有光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的多个电荷转移电极2，相对于光入射面，在彼此相邻的电荷转移电极2之间形成有用于透射光的多个开口OP。此外，可以在每个电荷转移电极2内部形成用于透射光的多个开口OP。

7. 发明申请

US20110303999A1 SEMICONDUCTOR LIGHT-DETECTING ELEMENT 有权
标题翻译：半导体光检测元件
公开(公告)号：US20110303999A1
公开(公告)日：2011-12-15
申请号：US13147871
申请日：2010-02-15
申请人： Akira Sakamoto , Takashi Iida , Koei Yamamoto , Kazuhisa Yamamura , Terumasa Nagano
发明人： Akira Sakamoto , Takashi Iida , Koei Yamamoto , Kazuhisa Yamamura , Terumasa Nagano
IPC分类号： H01L31/0236
CPC分类号： H01L31/02366 , H01L27/1446 , H01L31/0236 , H01L31/02363 , H01L31/035281 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Prepared is an n− type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n− type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n− type semiconductor substrate 1 is formed on the second principal surface 1b side of the n− type semiconductor substrate 1. After formation of the accumulation layer 11, the n− type semiconductor substrate 1 is subjected to a thermal treatment.
摘要翻译：制备的n型半导体衬底1具有彼此相对的第一主表面1a和第二主表面1b，并且具有形成在第一主表面1a侧上的p +型半导体区域3。在n型半导体衬底1的第二主表面1b中至少与p +型半导体区域3相对的区域用脉冲激光束照射以形成不规则凹凸。在形成不规则凹凸10之后，积累在n型半导体衬底1的第二主表面1b侧上形成杂质浓度高于n型半导体衬底1的层11。在形成蓄积层11之后，n型半导体衬底1 进行热处理。

8. 发明授权

US5677940A Digital X-ray imaging apparatus 失效
标题翻译：数字X射线成像装置
公开(公告)号：US5677940A
公开(公告)日：1997-10-14
申请号：US618991
申请日：1996-03-20
申请人： Masakazu Suzuki , Keisuke Mori , Akifumi Tachibana , Kazunari Matoba , Koei Yamamoto , Seiichiro Mizuno
发明人： Masakazu Suzuki , Keisuke Mori , Akifumi Tachibana , Kazunari Matoba , Koei Yamamoto , Seiichiro Mizuno
IPC分类号： A61B6/00 , A61B6/06 , A61B6/14 , H04N5/32
CPC分类号： H04N5/32 , A61B6/14
摘要： A digital X-ray imaging apparatus comprises an X-ray generator 6 for generating X-rays toward a subject, an X-ray imaging device 7 for detecting an image of X-rays having passed through the subject, a swivel member 4 and a horizontal movement means 8 provided with the X-ray generator 6 and the X-ray imaging device 7 opposed to each other to relatively move the X-ray generator 6 and the X-ray imaging device 7 with respect to the subject, a CPU 21 for producing a tomographic image in accordance with an imaging signal from the X-ray imaging device 7, frame memories and an image display unit 26 for displaying the tomographic image. The X-ray imaging device 7 includes a MOS image sensor having a plurality of two-dimensional light-receiving pixels. With this configuration, a tomographic image along a given tomographic plane can be produced by a signal X-ray imaging operation, and the imaging sensitivity of the digital X-ray imaging apparatus can be enhanced.
摘要翻译：数字X射线成像装置包括用于向被检体产生X射线的X射线发生器6，用于检测穿过被检体的X射线的图像的X射线成像装置7，旋转构件4和设置有彼此相对的X射线发生器6和X射线摄像装置7的相对于被摄体使X射线发生器6和X射线摄像装置7相对移动的水平移动机构8，CPU21 用于根据来自X射线成像装置7的成像信号，帧存储器和用于显示断层图像的图像显示单元26产生断层图像。 X射线成像装置7包括具有多个二维光接收像素的MOS图像传感器。利用这种配置，可以通过信号X射线成像操作来产生沿着给定的断层摄影平面的断层图像，并且可以提高数字X射线成像装置的成像灵敏度。

9. 发明申请

US20100078749A1 DISTANCE IMAGE SENSOR 有权
标题翻译：距离图像传感器
公开(公告)号：US20100078749A1
公开(公告)日：2010-04-01
申请号：US12514898
申请日：2007-11-13
申请人： Masanori Sahara , Mitsutaka Takemura , Koei Yamamoto
发明人： Masanori Sahara , Mitsutaka Takemura , Koei Yamamoto
IPC分类号： H01L31/101
CPC分类号： G01C3/085 , G01S17/36 , G01S17/89 , H01L27/1443 , H01L27/14618 , H01L27/1464 , H01L27/14665 , H01L2924/0002 , H01L2924/00
摘要： In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.
摘要翻译：在范围图像传感器8中，当施加在半导体基板11和第一半导体区域13之间的第一反向偏置电压为H偏压时，从彼此相邻的第一半导体区域13的pn结扩展的第一耗尽层A1和A1 相互连接，以覆盖从第二半导体区域14的pn结扩展的第二耗尽层B1。因此，由半导体衬底11的后表面11a附近产生的载流子C可靠地被第一贫化层 A1。此外，当施加在半导体衬底11和第二半导体区域14之间的第二反向偏置电压是H偏压时，彼此相邻的第二耗尽层彼此膨胀并且彼此连接以覆盖第一耗尽层。因此，由半导体衬底的后表面附近产生的载流子被第二耗尽层可靠地捕获。

10. 发明授权

US5780913A Photoelectric tube using electron beam irradiation diode as anode 失效
标题翻译：光电管采用电子束照射二极管作为阳极
公开(公告)号：US5780913A
公开(公告)日：1998-07-14
申请号：US954616
申请日：1997-10-27
申请人： Masaharu Muramatsu , Motohiro Suyama , Koei Yamamoto
发明人： Masaharu Muramatsu , Motohiro Suyama , Koei Yamamoto
IPC分类号： H01J31/49 , H01L31/115
CPC分类号： H01J31/49
摘要： When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.
摘要翻译：当光入射到该电子管的光电表面上时，发射光电子。这些光电子被加速并入射在电子束照射二极管上。大约100V的反向电压被施加到电子束照射二极管，以在整个阳极层和硅衬底的p-n结界面附近形成耗尽区。事件加速电子在具有电子入射表面和耗尽的阳极层的重掺杂p型层中释放动能以形成电子 - 空穴对。在这种情况下，由于具有电子入射面的重掺杂p型层非常薄，所以在该层中几乎不释放能量，几乎所有能量在耗尽区中释放。从释放能量时形成的电子 - 空穴对提取的信号电荷作为来自两个电极的信号被输出。

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