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1. 发明授权

US08748039B2 Energy storage device and manufacturing method thereof 有权
标题翻译：储能装置及其制造方法
公开(公告)号：US08748039B2
公开(公告)日：2014-06-10
申请号：US13050980
申请日：2011-03-18
申请人： Kiyofumi Ogino , Kazutaka Kuriki
发明人： Kiyofumi Ogino , Kazutaka Kuriki
IPC分类号： H01M4/66
CPC分类号： H01M10/0525 , H01G11/12 , H01G11/28 , H01G11/50 , H01G11/68 , H01G11/70 , H01G11/72 , H01G11/74 , H01G11/84 , H01M4/0404 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M4/70 , H01M10/0413 , H01M10/0459 , H01M10/0583 , H01M2004/025 , Y02E60/13 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： An electrode of an energy storage device with less deterioration by charge and discharge can be manufactured. In addition, an energy storage device which has large capacity and high endurance can be manufactured. A manufacturing method of an electrode of an energy storage device is provided in which a high-wettability regions and a low-wettability region are formed at a surface of a current collector, a composition containing silicon, germanium, or tin is discharged to the high-wettability regions and then baked to form separate active materials over a surface of the current collector. Thus, an electrode of an energy storage device with less deterioration due to charge and discharge can be manufactured.
摘要翻译：可以制造具有较少的充放电劣化的储能装置的电极。另外，能够制造容量大，耐久性高的储能装置。提供一种储能装置的电极的制造方法，其中在集电体的表面形成有高润湿性区域和低润湿性区域，含有硅，锗或锡的组合物排出到高 - 润湿性区域，然后烘烤以在集电器的表面上形成分离的活性材料。因此，可以制造由于充放电而具有较小劣化的储能装置的电极。

2. 发明申请

US20120141866A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20120141866A1
公开(公告)日：2012-06-07
申请号：US13307045
申请日：2011-11-30
申请人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
发明人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
IPC分类号： H01M4/66 , H01M10/02 , H01G9/032
CPC分类号： H01M4/366 , H01G11/06 , H01G11/50 , H01G11/68 , H01G11/72 , H01M4/382 , H01M4/386 , H01M4/661 , H01M10/0525 , H01M10/0562 , H01M2004/027 , Y02E60/122 , Y02E60/13 , Y02T10/7022
摘要： A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
摘要翻译：提供了一种具有改善的性能的蓄电装置，例如较高的放电容量，并且由于活性材料层的剥离等而导致的劣化不大可能。在蓄电装置的电极中，作为可与锂合金化的材料，在集电体上使用磷掺杂非晶硅作为活性物质层，在活性物质层上沉积氧化铌作为含有铌的层。因此，能够提高蓄电装置的容量，能够提高循环特性和充放电效率。

3. 发明申请

US20110075322A1 ELECTROCHEMICAL CAPACITOR 有权
标题翻译：电化学电容器
公开(公告)号：US20110075322A1
公开(公告)日：2011-03-31
申请号：US12891321
申请日：2010-09-27
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
IPC分类号： H01G9/155
CPC分类号： H01G11/76 , H01G11/02 , H01G11/10 , H01G11/56 , H01G11/62 , H01G11/72 , Y02E60/13
摘要： An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.
摘要翻译：提出了能增加容量的电化学电容器。电化学电容器是在基板的表面平面上形成的正极和负极。此外，电化学电容器具有电解质，正极和负极与电解质的相同的表面接触。换句话说，电化学电容器在电解质的表面上具有正极活性物质和负极活性物质，与正极活性物质接触的正极集电体和负极集电体与负极活性物质接触。通过上述结构，能够提高电化学电容器的容量。

4. 发明授权

US09960225B2 Manufacturing method of power storage device 有权
公开(公告)号：US09960225B2
公开(公告)日：2018-05-01
申请号：US13164839
申请日：2011-06-21
申请人： Kazutaka Kuriki , Michiko Konishi , Asami Tadokoro , Yasunori Yoshida , Kiyofumi Ogino , Toshihiko Takeuchi
发明人： Kazutaka Kuriki , Michiko Konishi , Asami Tadokoro , Yasunori Yoshida , Kiyofumi Ogino , Toshihiko Takeuchi
IPC分类号： H01M4/1395 , H01M4/134 , H01G11/06 , H01G11/28 , H01L49/02 , H01G11/12 , H01G11/70 , H01G11/86 , H01M4/04 , H01M4/66 , H01M10/052
CPC分类号： H01L28/84 , H01G11/06 , H01G11/12 , H01G11/28 , H01G11/70 , H01G11/86 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M10/052 , Y02E60/13
摘要： It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.

5. 发明授权

US08835048B2 Power storage device 有权
标题翻译：蓄电装置
公开(公告)号：US08835048B2
公开(公告)日：2014-09-16
申请号：US13153503
申请日：2011-06-06
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Tomokazu Yokoi , Makoto Ishikawa , Toshihiko Takeuchi
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Tomokazu Yokoi , Makoto Ishikawa , Toshihiko Takeuchi
IPC分类号： H01M4/64 , H01G9/042 , H01M10/04 , H01M10/0525 , H01M4/66 , H01M4/134 , H01G11/26 , H01M4/02
CPC分类号： H01G11/26 , H01M4/134 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M2004/025 , Y02E60/122 , Y02E60/13
摘要： An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.
摘要翻译：提供了一种用于蓄电装置的放电劣化少的电极和使用该电极的蓄电装置。在蓄电装置用电极和蓄电装置中，在集电体上选择性地设置作为催化剂的金属元素的区域，形成活性物质层。通过选择性地提供包括金属元素的区域，可以在集电体上的有源材料层中有效地产生晶须，并且可以控制晶须产生区域。因此，可以提高放电容量，并且可以提高循环特性。

6. 发明授权

US08755169B2 Electrochemical capacitor 有权
标题翻译：电化学电容器
公开(公告)号：US08755169B2
公开(公告)日：2014-06-17
申请号：US12891321
申请日：2010-09-27
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito
IPC分类号： H01G9/00 , H01G9/02
CPC分类号： H01G11/76 , H01G11/02 , H01G11/10 , H01G11/56 , H01G11/62 , H01G11/72 , Y02E60/13
摘要： An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.
摘要翻译：提出了能增加容量的电化学电容器。电化学电容器是在基板的表面平面上形成的正极和负极。此外，电化学电容器具有电解质，正极和负极与电解质的相同的表面接触。换句话说，电化学电容器在电解质的表面上具有正极活性物质和负极活性物质，与正极活性物质接触的正极集电体和负极集电体与负极活性物质接触。通过上述结构，能够提高电化学电容器的容量。

7. 发明授权

US10658661B2 Power storage device and method for manufacturing electrode 有权
公开(公告)号：US10658661B2
公开(公告)日：2020-05-19
申请号：US13596175
申请日：2012-08-28
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Nobuhiro Inoue
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Nobuhiro Inoue
IPC分类号： H01M4/583 , H01M4/04 , H01M4/38 , H01G9/00 , B82Y30/00 , H01M10/0525 , H01M4/134 , H01G11/30 , H01G11/50
摘要： An electrode and a power storage device each of which achieves better charge-discharge cycle characteristics and is less likely to deteriorate owing to separation of an active material, or the like are manufactured. As the electrode for the power storage device, an electrode including a current collector and an active material layer that is over the current collector and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material layer or its separation from the current collector, can be suppressed.

8. 发明授权

US09362556B2 Power storage device 有权
标题翻译：蓄电装置
公开(公告)号：US09362556B2
公开(公告)日：2016-06-07
申请号：US13307045
申请日：2011-11-30
申请人： Kazutaka Kuriki , Nobuhiro Inoue , Kiyofumi Ogino
发明人： Kazutaka Kuriki , Nobuhiro Inoue , Kiyofumi Ogino
IPC分类号： H01M4/66 , H01M4/38 , H01G11/06 , H01G11/50 , H01M10/0562
CPC分类号： H01M4/366 , H01G11/06 , H01G11/50 , H01G11/68 , H01G11/72 , H01M4/382 , H01M4/386 , H01M4/661 , H01M10/0525 , H01M10/0562 , H01M2004/027 , Y02E60/122 , Y02E60/13 , Y02T10/7022
摘要： A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
摘要翻译：提供了一种具有改善的性能的蓄电装置，例如较高的放电容量，并且由于活性材料层的剥离等而导致的劣化不大可能。在蓄电装置的电极中，作为可与锂合金化的材料，在集电体上使用磷掺杂非晶硅作为活性物质层，在活性物质层上沉积氧化铌作为含有铌的层。因此，能够提高蓄电装置的容量，能够提高循环特性和充放电效率。

9. 发明授权

US08952490B2 Redox capacitor and manufacturing method thereof 有权
标题翻译：氧化还原电容器及其制造方法
公开(公告)号：US08952490B2
公开(公告)日：2015-02-10
申请号：US12891461
申请日：2010-09-27
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito , Junichiro Sakata
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito , Junichiro Sakata
IPC分类号： H01L21/02 , H01G11/02 , H01G9/022 , H01G11/56 , H01L49/02 , H01G11/70 , H01G9/22 , H01G11/28 , H01G11/84 , H01G11/68
CPC分类号： H01G11/02 , H01G9/038 , H01G9/22 , H01G11/28 , H01G11/56 , H01G11/68 , H01G11/70 , H01G11/84 , H01L21/02565 , H01L21/02631 , H01L28/40 , Y02E60/13
摘要： To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO3(ZnO)m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.
摘要翻译：提供可在室温下使用的氧化还原电容器及其制造方法。包括氢的非晶半导体被用作氧化还原电容器的电解质。作为包括氢的非晶半导体的典型实例，可以使用包括诸如非晶硅，非晶硅锗或无定形锗的半导体元件的非晶半导体。作为包括氢的非晶半导体的另一例子，可以使用包括氢的氧化物半导体。作为包括氢的氧化物半导体的典型实例，可以给出包括氧化锌，氧化钛，氧化镍，氧化钒和氧化铟等单组分氧化物半导体的非晶半导体。作为包含氢的氧化物半导体的另一个实例，可以使用诸如InMO 3（ZnO）m（m> 0和M是选自Ga，Fe，Ni，Mn和Co中的一种或多种金属元素）的多组分氧化物半导体。

10. 发明申请

US20110073991A1 REDOX CAPACITOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译： REDOX电容器及其制造方法
公开(公告)号：US20110073991A1
公开(公告)日：2011-03-31
申请号：US12891461
申请日：2010-09-27
申请人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito , Junichiro Sakata
发明人： Kazutaka Kuriki , Kiyofumi Ogino , Yumiko Saito , Junichiro Sakata
IPC分类号： H01L27/08 , H01L21/02
CPC分类号： H01G11/02 , H01G9/038 , H01G9/22 , H01G11/28 , H01G11/56 , H01G11/68 , H01G11/70 , H01G11/84 , H01L21/02565 , H01L21/02631 , H01L28/40 , Y02E60/13
摘要： To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO3(ZnO)m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.
摘要翻译：提供可在室温下使用的氧化还原电容器及其制造方法。包括氢的非晶半导体被用作氧化还原电容器的电解质。作为包括氢的非晶半导体的典型实例，可以使用包括诸如非晶硅，非晶硅锗或无定形锗的半导体元件的非晶半导体。作为包括氢的非晶半导体的另一例子，可以使用包括氢的氧化物半导体。作为包括氢的氧化物半导体的典型实例，可以给出包括氧化锌，氧化钛，氧化镍，氧化钒和氧化铟等单组分氧化物半导体的非晶半导体。作为包含氢的氧化物半导体的另一个实例，可以使用诸如InMO 3（ZnO）m（m> 0和M是选自Ga，Fe，Ni，Mn和Co中的一种或多种金属元素）的多组分氧化物半导体。

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