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1. 发明授权

US09799461B2 Power storage device and method for manufacturing electrode 有权
公开(公告)号：US09799461B2
公开(公告)日：2017-10-24
申请号：US13596189
申请日：2012-08-28
申请人： Kosei Noda , Kazutaka Kuriki , Nobuhiro Inoue
发明人： Kosei Noda , Kazutaka Kuriki , Nobuhiro Inoue
IPC分类号： H01M4/38 , H01M4/48 , H01G11/68 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/86 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/36 , H01M10/052
CPC分类号： H01G11/68 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/86 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/387 , H01M4/48 , H01M4/483 , H01M10/052 , Y02E60/13 , Y02T10/7011 , Y02T10/7022
摘要： As an electrode for a power storage device, an electrode including a current collector, a first active material layer over the current collector, and a second active material layer that is over the first active material layer and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics and rate characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material or its separation from the current collector, can be suppressed.

2. 发明授权

US09011702B2 Method for manufacturing electrode for power storage device and method for manufacturing power storage device 有权
标题翻译：蓄电装置用电极的制造方法及蓄电装置的制造方法
公开(公告)号：US09011702B2
公开(公告)日：2015-04-21
申请号：US12888633
申请日：2010-09-23
申请人： Shunpei Yamazaki , Kazutaka Kuriki , Junpei Momo , Rie Matsubara
发明人： Shunpei Yamazaki , Kazutaka Kuriki , Junpei Momo , Rie Matsubara
IPC分类号： H01G4/00 , H01G5/00 , H01G7/00 , H01G9/00 , H01G13/00 , H01B13/00 , B31D3/00 , C25F3/00 , H01M4/13 , H01M4/58 , H01G9/008 , H01G9/055 , H01G9/04 , H01G11/26 , H01G11/28 , H01G11/86 , H01M4/04 , H01M4/139 , H01M4/66 , H01G11/50 , H01M10/0525
CPC分类号： H01G9/016 , H01G9/055 , H01G9/058 , H01G11/26 , H01G11/28 , H01G11/50 , H01G11/86 , H01M4/0438 , H01M4/0445 , H01M4/13 , H01M4/139 , H01M4/661 , H01M10/0525 , Y02E60/122 , Y02E60/13 , Y02P70/54
摘要： One of objects is to reduce the effect caused by the volume expansion of an active material. An embodiment is a method for manufacturing an electrode for a power storage device which includes an active material over one of surfaces of a current collector. The active material is formed by forming a conductive body functioning as the current collector; forming a mixed layer including an amorphous region and a microcrystalline region over one of surfaces of the conductive body; and etching the mixed layer selectively, so that a part of or the whole of the amorphous region is removed and the microcrystalline region is exposed. Thus, the effect caused by the volume expansion of the active material is reduced.
摘要翻译：一个目的是减少由活性物质的体积膨胀引起的影响。一种实施方案是一种制造用于蓄电装置的电极的方法，其包括在集电体的一个表面上的活性材料。活性材料通过形成用作集电体的导电体形成; 在所述导电体的一个表面上形成包括非晶区域和微晶区域的混合层; 并选择性地蚀刻混合层，使得去除非晶区域的一部分或全部，并露出微晶区域。因此，活性物质的体积膨胀引起的效果降低。

3. 发明授权

US08748039B2 Energy storage device and manufacturing method thereof 有权
标题翻译：储能装置及其制造方法
公开(公告)号：US08748039B2
公开(公告)日：2014-06-10
申请号：US13050980
申请日：2011-03-18
申请人： Kiyofumi Ogino , Kazutaka Kuriki
发明人： Kiyofumi Ogino , Kazutaka Kuriki
IPC分类号： H01M4/66
CPC分类号： H01M10/0525 , H01G11/12 , H01G11/28 , H01G11/50 , H01G11/68 , H01G11/70 , H01G11/72 , H01G11/74 , H01G11/84 , H01M4/0404 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M4/70 , H01M10/0413 , H01M10/0459 , H01M10/0583 , H01M2004/025 , Y02E60/13 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： An electrode of an energy storage device with less deterioration by charge and discharge can be manufactured. In addition, an energy storage device which has large capacity and high endurance can be manufactured. A manufacturing method of an electrode of an energy storage device is provided in which a high-wettability regions and a low-wettability region are formed at a surface of a current collector, a composition containing silicon, germanium, or tin is discharged to the high-wettability regions and then baked to form separate active materials over a surface of the current collector. Thus, an electrode of an energy storage device with less deterioration due to charge and discharge can be manufactured.
摘要翻译：可以制造具有较少的充放电劣化的储能装置的电极。另外，能够制造容量大，耐久性高的储能装置。提供一种储能装置的电极的制造方法，其中在集电体的表面形成有高润湿性区域和低润湿性区域，含有硅，锗或锡的组合物排出到高 - 润湿性区域，然后烘烤以在集电器的表面上形成分离的活性材料。因此，可以制造由于充放电而具有较小劣化的储能装置的电极。

4. 发明授权

US08476638B2 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US08476638B2
公开(公告)日：2013-07-02
申请号：US13550776
申请日：2012-07-17
申请人： Satoshi Toriumi , Ryota Tajima , Takashi Ohtsuki , Tetsuhiro Tanaka , Ryo Tokumaru , Mitsuhiro Ichijo , Kazutaka Kuriki , Tomokazu Yokoi , Toshiya Endo , Shunpei Yamazaki
发明人： Satoshi Toriumi , Ryota Tajima , Takashi Ohtsuki , Tetsuhiro Tanaka , Ryo Tokumaru , Mitsuhiro Ichijo , Kazutaka Kuriki , Tomokazu Yokoi , Toshiya Endo , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/45565 , C23C16/45574 , C23C16/5096 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L21/0262 , H01L29/66765 , H01L29/78696
摘要： An object of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.
摘要翻译：本发明的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜的制造技术。在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极和第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

5. 发明授权

US08273611B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08273611B2
公开(公告)日：2012-09-25
申请号：US12840379
申请日：2010-07-21
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.
摘要翻译：通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。

6. 发明申请

US20120141866A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20120141866A1
公开(公告)日：2012-06-07
申请号：US13307045
申请日：2011-11-30
申请人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
发明人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
IPC分类号： H01M4/66 , H01M10/02 , H01G9/032
CPC分类号： H01M4/366 , H01G11/06 , H01G11/50 , H01G11/68 , H01G11/72 , H01M4/382 , H01M4/386 , H01M4/661 , H01M10/0525 , H01M10/0562 , H01M2004/027 , Y02E60/122 , Y02E60/13 , Y02T10/7022
摘要： A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
摘要翻译：提供了一种具有改善的性能的蓄电装置，例如较高的放电容量，并且由于活性材料层的剥离等而导致的劣化不大可能。在蓄电装置的电极中，作为可与锂合金化的材料，在集电体上使用磷掺杂非晶硅作为活性物质层，在活性物质层上沉积氧化铌作为含有铌的层。因此，能够提高蓄电装置的容量，能够提高循环特性和充放电效率。

7. 发明申请

US20110305950A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20110305950A1
公开(公告)日：2011-12-15
申请号：US13153503
申请日：2011-06-06
申请人： Kazutaka KURIKI , Kiyofumi OGINO , Tomokazu YOKOI , Makoto ISHIKAWA , Toshihiko TAKEUCHI
发明人： Kazutaka KURIKI , Kiyofumi OGINO , Tomokazu YOKOI , Makoto ISHIKAWA , Toshihiko TAKEUCHI
IPC分类号： H01M4/64 , H01G9/042 , H01M10/04
CPC分类号： H01G11/26 , H01M4/134 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M2004/025 , Y02E60/122 , Y02E60/13
摘要： An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.
摘要翻译：提供了一种用于蓄电装置的放电劣化少的电极和使用该电极的蓄电装置。在蓄电装置用电极和蓄电装置中，在集电体上选择性地设置作为催化剂的金属元素的区域，形成活性物质层。通过选择性地提供包括金属元素的区域，可以在集电体上的有源材料层中有效地产生晶须，并且可以控制晶须产生区域。因此，可以提高放电容量，并且可以提高循环特性。

8. 发明申请

US20110269301A1 MANUFACTURING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF ELECTRODE 有权
标题翻译：单晶半导体膜的制造方法及电极的制造方法
公开(公告)号：US20110269301A1
公开(公告)日：2011-11-03
申请号：US13092249
申请日：2011-04-22
申请人： Sho KATO , Kazutaka KURIKI
发明人： Sho KATO , Kazutaka KURIKI
IPC分类号： H01L21/20
CPC分类号： H01L21/76251
摘要： To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapor phase epitaxial growth method, a film having tensile stress (for example, a thermo-setting resin film 12) is formed over a surface of the single crystal semiconductor film 11, and the single crystal semiconductor substrate 10 and the single crystal semiconductor film 11 are separated from each other by a separation step in which force is applied to the single crystal semiconductor film 11, thereby obtaining a single crystal semiconductor film. Note that as the thermo-setting resin film 12, an epoxy resin film can be used, for example.
摘要翻译：提供通过简单且低成本的方法获得单晶半导体膜的方法。通过气相外延生长法在单晶半导体衬底10的表面上形成具有压应力的单晶半导体膜11，在其上形成具有拉伸应力的膜（例如，热固性树脂膜12）通过对单晶半导体膜11施加力的分离工序将单晶半导体膜11的表面，单晶半导体基板10和单晶半导体膜11分离，得到单晶半导体膜。另外，作为热固性树脂膜12，例如可以使用环氧树脂膜。

9. 发明申请

US20110236753A1 SECONDARY BATTERY AND METHOD FOR MANUFACTURING ELECTRODE OF THE SAME 有权
标题翻译：二次电池及其制造方法
公开(公告)号：US20110236753A1
公开(公告)日：2011-09-29
申请号：US13044172
申请日：2011-03-09
申请人： Kazutaka KURIKI , Tamae MORIWAKA
发明人： Kazutaka KURIKI , Tamae MORIWAKA
IPC分类号： H01M4/58 , H01M4/26
CPC分类号： H01M4/134 , H01M4/0428 , H01M4/0471 , H01M4/1395 , H01M4/38 , H01M4/661 , H01M4/662 , H01M4/667 , Y10T29/49108 , Y10T29/49115
摘要： A secondary battery to be provided includes an electrode including silicon or a silicon compound, and the electrode includes, for example, a current collector formed using metal and a silicon film as an active material provided over the current collector. The hydrogen concentration in the silicon film of the electrode may be higher than or equal to 1.0×1018 cm−3 and lower than or equal to 1.0×1021 cm−3. Such a silicon film is formed over a current collector by a plasma CVD method or the like for example, and hydrogen is contained as little as possible in the silicon film, which is preferable. In order to contain hydrogen as little as possible in the silicon film, the silicon film may be formed over the current collector under a high temperature environment.
摘要翻译：要提供的二次电池包括含硅或硅化合物的电极，并且该电极包括例如使用金属形成的集电体和设置在集电体上的活性材料的硅膜。电极的硅膜中的氢浓度可以高于或等于1.0×1018cm-3且小于或等于1.0×1021cm-3。这样的硅膜例如通过等离子体CVD法等在集电体上形成，并且在硅膜中尽可能少地含有氢，这是优选的。为了在硅膜中尽可能少地含有氢，可以在高温环境下在集电体上形成硅膜。

10. 发明授权

US07763502B2 Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device 失效
标题翻译：半导体衬底，半导体衬底的制造方法，半导体器件和电子器件
公开(公告)号：US07763502B2
公开(公告)日：2010-07-27
申请号：US12213308
申请日：2008-06-18
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.
摘要翻译：通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。

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