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1. 发明申请

US20120141866A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20120141866A1
公开(公告)日：2012-06-07
申请号：US13307045
申请日：2011-11-30
申请人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
发明人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
IPC分类号： H01M4/66 , H01M10/02 , H01G9/032
CPC分类号： H01M4/366 , H01G11/06 , H01G11/50 , H01G11/68 , H01G11/72 , H01M4/382 , H01M4/386 , H01M4/661 , H01M10/0525 , H01M10/0562 , H01M2004/027 , Y02E60/122 , Y02E60/13 , Y02T10/7022
摘要： A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
摘要翻译：提供了一种具有改善的性能的蓄电装置，例如较高的放电容量，并且由于活性材料层的剥离等而导致的劣化不大可能。在蓄电装置的电极中，作为可与锂合金化的材料，在集电体上使用磷掺杂非晶硅作为活性物质层，在活性物质层上沉积氧化铌作为含有铌的层。因此，能够提高蓄电装置的容量，能够提高循环特性和充放电效率。

2. 发明申请

US20130052528A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING ELECTRODE 审中-公开
标题翻译：电力储存装置及制造电极的方法
公开(公告)号：US20130052528A1
公开(公告)日：2013-02-28
申请号：US13596175
申请日：2012-08-28
申请人： Kazutaka KURIKI , Kiyofumi OGINO , Nobuhiro INOUE
发明人： Kazutaka KURIKI , Kiyofumi OGINO , Nobuhiro INOUE
IPC分类号： H01M4/583 , H01M4/04 , H01M4/38 , H01G9/00 , B82Y30/00
CPC分类号： H01M4/386 , H01G11/30 , H01G11/50 , H01M4/134 , H01M4/387 , H01M10/0525 , Y02E60/13
摘要： An electrode and a power storage device each of which achieves better charge-discharge cycle characteristics and is less likely to deteriorate owing to separation of an active material, or the like are manufactured. As the electrode for the power storage device, an electrode including a current collector and an active material layer that is over the current collector and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material layer or its separation from the current collector, can be suppressed.
摘要翻译：制造各自实现更好的充放电循环特性并且由于活性物质的分离等而不太可能劣化的电极和蓄电装置。作为蓄电装置的电极，使用包含集电体的电极和在集电体上方的包含含有铌氧化物的颗粒和粒状活性物质的活性物质层，由此，蓄电装置可以改善。此外，颗粒状活性物质与含有氧化铌的粒子的接触使粒状活性物质物理固定; 因此，可以抑制由于蓄电装置的充放电而发生的活性物质的膨胀和收缩的劣化，例如活性物质层的粉化或其与集电体的分离。

3. 发明申请

US20110305950A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20110305950A1
公开(公告)日：2011-12-15
申请号：US13153503
申请日：2011-06-06
申请人： Kazutaka KURIKI , Kiyofumi OGINO , Tomokazu YOKOI , Makoto ISHIKAWA , Toshihiko TAKEUCHI
发明人： Kazutaka KURIKI , Kiyofumi OGINO , Tomokazu YOKOI , Makoto ISHIKAWA , Toshihiko TAKEUCHI
IPC分类号： H01M4/64 , H01G9/042 , H01M10/04
CPC分类号： H01G11/26 , H01M4/134 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M2004/025 , Y02E60/122 , Y02E60/13
摘要： An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.
摘要翻译：提供了一种用于蓄电装置的放电劣化少的电极和使用该电极的蓄电装置。在蓄电装置用电极和蓄电装置中，在集电体上选择性地设置作为催化剂的金属元素的区域，形成活性物质层。通过选择性地提供包括金属元素的区域，可以在集电体上的有源材料层中有效地产生晶须，并且可以控制晶须产生区域。因此，可以提高放电容量，并且可以提高循环特性。

4. 发明申请

US20110236755A1 ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：能源储存装置及其制造方法
公开(公告)号：US20110236755A1
公开(公告)日：2011-09-29
申请号：US13050980
申请日：2011-03-18
申请人： Kiyofumi OGINO , Kazutaka KURIKI
发明人： Kiyofumi OGINO , Kazutaka KURIKI
IPC分类号： H01M4/58 , H01M4/64 , H01M4/66 , H01G9/00 , H01G9/035 , H01G9/155
CPC分类号： H01M10/0525 , H01G11/12 , H01G11/28 , H01G11/50 , H01G11/68 , H01G11/70 , H01G11/72 , H01G11/74 , H01G11/84 , H01M4/0404 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M4/70 , H01M10/0413 , H01M10/0459 , H01M10/0583 , H01M2004/025 , Y02E60/13 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： An electrode of an energy storage device with less deterioration by charge and discharge can be manufactured. In addition, an energy storage device which has large capacity and high endurance can be manufactured. A manufacturing method of an electrode of an energy storage device is provided in which a high-wettability regions and a low-wettability region are formed at a surface of a current collector, a composition containing silicon, germanium, or tin is discharged to the high-wettability regions and then baked to form separate active materials over a surface of the current collector. Thus, an electrode of an energy storage device with less deterioration due to charge and discharge can be manufactured.
摘要翻译：可以制造具有较少的充放电劣化的储能装置的电极。另外，能够制造容量大，耐久性高的储能装置。提供一种储能装置的电极的制造方法，其中在集电体的表面形成有高润湿性区域和低润湿性区域，含有硅，锗或锡的组合物排出到高 - 润湿性区域，然后烘烤以在集电器的表面上形成分离的活性材料。因此，可以制造由于充放电而具有较小劣化的储能装置的电极。

5. 发明申请

US20120003530A1 MANUFACTURING METHOD OF POWER STORAGE DEVICE 有权
标题翻译：蓄电装置的制造方法
公开(公告)号：US20120003530A1
公开(公告)日：2012-01-05
申请号：US13164839
申请日：2011-06-21
申请人： Kazutaka KURIKI , Michiko KONISHI , Asami TADOKORO , Yasunori YOSHIDA , Kiyofumi OGINO , Toshihiko TAKEUCHI
发明人： Kazutaka KURIKI , Michiko KONISHI , Asami TADOKORO , Yasunori YOSHIDA , Kiyofumi OGINO , Toshihiko TAKEUCHI
IPC分类号： H01M4/02 , H01L21/02 , H01M4/13 , H01G9/15
CPC分类号： H01L28/84 , H01G11/06 , H01G11/12 , H01G11/28 , H01G11/70 , H01G11/86 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M10/052 , Y02E60/13
摘要： It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.
摘要翻译：其目的在于提高蓄电装置的性能，例如循环特性。蓄电装置包括集电体和包含与集电体紧密接触形成的晶须的晶体半导体层。通过增加粘附力来抑制结晶半导体层的分离，从而实现第十循环数相对于第一循环数的比容量大于或等于90％的循环特性。此外，实现了相对于第一循环次数的第百次循环次数的比容量大于或等于70％的循环特性。

6. 发明申请

US20130230772A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING ELECTRODE 有权
标题翻译：电力储存装置及制造电极的方法
公开(公告)号：US20130230772A1
公开(公告)日：2013-09-05
申请号：US13596189
申请日：2012-08-28
申请人： Kosei NODA , Kazutaka KURIKI , Nobuhiro INOUE
发明人： Kosei NODA , Kazutaka KURIKI , Nobuhiro INOUE
IPC分类号： H01G11/68 , H01M4/38 , H01G11/06 , H01M4/48
CPC分类号： H01G11/68 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/86 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/387 , H01M4/48 , H01M4/483 , H01M10/052 , Y02E60/13 , Y02T10/7011 , Y02T10/7022
摘要： As an electrode for a power storage device, an electrode including a current collector, a first active material layer over the current collector, and a second active material layer that is over the first active material layer and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics and rate characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material or its separation from the current collector, can be suppressed.
摘要翻译：作为蓄电装置的电极，包括集电体，集电体上方的第一活性物质层和超过第一活性物质层的第二活性物质层的电极，包括含有氧化铌的颗粒和粒状的使用活性物质，能够提高蓄电装置的充放电循环特性和速率特性。此外，颗粒状活性物质与含有氧化铌的粒子的接触使粒状活性物质物理固定; 因此，可以抑制由于蓄电装置的充放电而发生的活性物质的膨胀和收缩的劣化，例如活性物质的粉化或其与集电器的分离。

7. 发明申请

US20130067726A1 LITHIUM SECONDARY BATTERY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：锂二次电池及其制造方法
公开(公告)号：US20130067726A1
公开(公告)日：2013-03-21
申请号：US13604675
申请日：2012-09-06
申请人： Kazutaka KURIKI , Nobuhiro Inoue , Kai Kimura
发明人： Kazutaka KURIKI , Nobuhiro Inoue , Kai Kimura
IPC分类号： H01M10/04
CPC分类号： H01M10/052 , H01M10/058 , H01M10/446 , H01M2220/30 , Y02E60/122 , Y02P70/54 , Y10T29/49108
摘要： An object is to improve the cycle performance by improving the reactivity between lithium and a negative electrode active material in the case where an alloy-based material such as silicon is used as the negative electrode active material. A method of manufacturing a lithium secondary battery including a positive electrode including a positive electrode active material into/from which lithium can be inserted/extracted, a negative electrode including a negative electrode active material into/from which lithium can be inserted/extracted, and an electrolyte solution is provided. The method includes the steps of electrochemically inserting lithium into the negative electrode with use of a counter electrode before the lithium secondary battery is assembled, electrochemically extracting part of the lithium inserted into the negative electrode after the insertion, and assembling the lithium secondary after the extraction.
摘要翻译：本发明的目的是通过提高锂和负极活性物质之间的反应性来提高循环性能，在使用诸如硅的合金基材料作为负极活性物质的情况下。一种制造锂二次电池的方法，该锂二次电池包括可以插入/提取锂的正极活性物质的正极，能够插入/提取锂的负极活性物质的负极，以及提供电解质溶液。该方法包括在组装锂二次电池之前使用对电极将锂电化学插入负极的步骤，在插入之后电化学提取插入到负极中的锂的一部分，并在提取后组装锂二次。

8. 发明申请

US20110269301A1 MANUFACTURING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF ELECTRODE 有权
标题翻译：单晶半导体膜的制造方法及电极的制造方法
公开(公告)号：US20110269301A1
公开(公告)日：2011-11-03
申请号：US13092249
申请日：2011-04-22
申请人： Sho KATO , Kazutaka KURIKI
发明人： Sho KATO , Kazutaka KURIKI
IPC分类号： H01L21/20
CPC分类号： H01L21/76251
摘要： To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapor phase epitaxial growth method, a film having tensile stress (for example, a thermo-setting resin film 12) is formed over a surface of the single crystal semiconductor film 11, and the single crystal semiconductor substrate 10 and the single crystal semiconductor film 11 are separated from each other by a separation step in which force is applied to the single crystal semiconductor film 11, thereby obtaining a single crystal semiconductor film. Note that as the thermo-setting resin film 12, an epoxy resin film can be used, for example.
摘要翻译：提供通过简单且低成本的方法获得单晶半导体膜的方法。通过气相外延生长法在单晶半导体衬底10的表面上形成具有压应力的单晶半导体膜11，在其上形成具有拉伸应力的膜（例如，热固性树脂膜12）通过对单晶半导体膜11施加力的分离工序将单晶半导体膜11的表面，单晶半导体基板10和单晶半导体膜11分离，得到单晶半导体膜。另外，作为热固性树脂膜12，例如可以使用环氧树脂膜。

9. 发明申请

US20110236753A1 SECONDARY BATTERY AND METHOD FOR MANUFACTURING ELECTRODE OF THE SAME 有权
标题翻译：二次电池及其制造方法
公开(公告)号：US20110236753A1
公开(公告)日：2011-09-29
申请号：US13044172
申请日：2011-03-09
申请人： Kazutaka KURIKI , Tamae MORIWAKA
发明人： Kazutaka KURIKI , Tamae MORIWAKA
IPC分类号： H01M4/58 , H01M4/26
CPC分类号： H01M4/134 , H01M4/0428 , H01M4/0471 , H01M4/1395 , H01M4/38 , H01M4/661 , H01M4/662 , H01M4/667 , Y10T29/49108 , Y10T29/49115
摘要： A secondary battery to be provided includes an electrode including silicon or a silicon compound, and the electrode includes, for example, a current collector formed using metal and a silicon film as an active material provided over the current collector. The hydrogen concentration in the silicon film of the electrode may be higher than or equal to 1.0×1018 cm−3 and lower than or equal to 1.0×1021 cm−3. Such a silicon film is formed over a current collector by a plasma CVD method or the like for example, and hydrogen is contained as little as possible in the silicon film, which is preferable. In order to contain hydrogen as little as possible in the silicon film, the silicon film may be formed over the current collector under a high temperature environment.
摘要翻译：要提供的二次电池包括含硅或硅化合物的电极，并且该电极包括例如使用金属形成的集电体和设置在集电体上的活性材料的硅膜。电极的硅膜中的氢浓度可以高于或等于1.0×1018cm-3且小于或等于1.0×1021cm-3。这样的硅膜例如通过等离子体CVD法等在集电体上形成，并且在硅膜中尽可能少地含有氢，这是优选的。为了在硅膜中尽可能少地含有氢，可以在高温环境下在集电体上形成硅膜。

10. 发明申请

US20120156556A1 ACTIVE MATERIAL, ELECTRODE INCLUDING THE ACTIVE MATERIAL AND MANUFACTURING METHOD THEREOF, AND SECONDARY BATTERY 有权
标题翻译：活性材料，包括活性材料的电极及其制造方法和二次电池
公开(公告)号：US20120156556A1
公开(公告)日：2012-06-21
申请号：US13307052
申请日：2011-11-30
申请人： Kazutaka KURIKI , Mitsuhiro Ichijo , Toshiya Endo
发明人： Kazutaka KURIKI , Mitsuhiro Ichijo , Toshiya Endo
IPC分类号： H01M10/02 , H01M4/66 , H01M4/58
CPC分类号： H01M4/366 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M4/48 , H01M4/661 , Y02E60/122 , Y02P70/54
摘要： An electrode in which a silicon layer is provided over a current collector, a thin film layer having a thickness within a certain range is provided on a surface of the silicon layer, and the thin film layer contains fluorine, is used for a power storage device. The thickness of the thin film layer containing fluorine is greater than 0 nm and less than or equal to 10 nm, preferably greater than or equal to 4 nm and less than or equal to 9 nm. The fluorine concentration of the thin film layer containing fluorine is preferably as high as possible, and the nitrogen concentration, the oxygen concentration, and the hydrogen concentration thereof are preferably as low as possible.
摘要翻译：在硅层的表面上设置有在集电体上设置硅层的电极，厚度在一定范围内的薄膜层，薄膜层含有氟，用于蓄电装置。含氟的薄膜层的厚度大于0nm且小于或等于10nm，优选大于或等于4nm且小于或等于9nm。含氟的薄膜层的氟浓度优选尽可能高，氮浓度，氧浓度和氢浓度优选尽可能低。

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