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1. 发明授权

US6072371A Quenchable VCO for switched band synthesizer applications 失效
标题翻译：用于切换频带合成器应用的可淬火VCO
公开(公告)号：US6072371A
公开(公告)日：2000-06-06
申请号：US876275
申请日：1997-06-16
申请人： Kevin W. Kobayashi , Duncan M. Smith , Aaron K. Oki , Arvind K. Sharma , Barry R. Allen
发明人： Kevin W. Kobayashi , Duncan M. Smith , Aaron K. Oki , Arvind K. Sharma , Barry R. Allen
IPC分类号： H03L7/099 , H03B5/02 , H03B5/18 , H03B5/00 , H03B5/12
CPC分类号： H03B5/1847
摘要： A quenchable VCO that is adapted to be used in switched band synthesizer applications. The VCO may be formed from a heterojunction bipolar transistor (HBT) in a common collector configuration. A quenching circuit which includes a p-i-n diode, is electrically coupled in series with the collector of the HBT. The p-i-n diode is adapted to be monolithically integrated with the HBT. Since the p-i-n diode is electrically connected to the collector of the HBT, as opposed to the base and emitter terminals of the HBT, which forms the main oscillator feedback loop, the Q-factor of the p-i-n diode will have relatively less loading on the phase noise of the HBT oscillator. Moreover, since the p-i-n diode is isolated from the base-emitter junction, the configuration will result in reduced frequency pulling and generation of spurious oscillation and transient effects due to the switching of the p-i-n diode quenched circuit. The use of a p-i-n diode for quenching of VCO also provides other inherent advantages over other types of semi-conductor switches, such as FET, Schottky diodes, PN diodes for quenchable VCO applications because p-i-n diodes are relative insensitive to RF and noise modulation. Because the p-i-n diode can be constructed from existing HBT collector-base MBE epitaxy layers, the quenching circuit can be manufactured relatively inexpensively.
摘要翻译：一种适用于切换频带合成器应用的可淬火VCO。 VCO可以由公共集电器配置中的异质结双极晶体管（HBT）形成。包括p-i-n二极管的淬火电路与HBT的集电器串联电耦合。 p-i-n二极管适于与HBT单片集成。由于pin二极管与HBT的集电极电连接，与形成主振荡器反馈环路的HBT的基极和发射极端子相反，因此pin二极管的Q因子在相位上的负载相对较小 HBT振荡器的噪声。此外，由于p-i-n二极管与基极 - 发射极结隔离，所以由于p-i-n二极管骤冷电路的切换，该结构将导致降低的频率拉动和寄生振荡的产生以及瞬态效应。与其他类型的半导体开关（例如FET，肖特基二极管，用于可淬灭的VCO应用的PN二极管）相比，使用p-i-n二极管来淬灭VCO也具有其他固有的优点，因为p-i-n二极管对RF和噪声调制相对不敏感。因为p-i-n二极管可以由现有的HBT集电极基极MBE外延层构成，所以可以相对廉价地制造淬火电路。

2. 发明授权

US06465289B1 Method of fabricating monolithic multifunction integrated circuit devices 失效
标题翻译：单片多功能集成电路器件的制造方法
公开(公告)号：US06465289B1
公开(公告)日：2002-10-15
申请号：US08675248
申请日：1996-07-01
申请人： Dwight C. Streit , Donald K. Umemoto , Aaron K. Oki , Kevin W. Kobayashi
发明人： Dwight C. Streit , Donald K. Umemoto , Aaron K. Oki , Kevin W. Kobayashi
IPC分类号： H01L21338
CPC分类号： H01L27/0605 , H01L21/8252
摘要： A method of selective molecular beam epitaxy for fabricating monolithically integrated circuit devices on a common substrate including combinations of PIN diode devices, HBT devices, HEMT devices and MESFET devices. The method includes depositing a profile layer of one of the devices on an appropriate substrate and then depositing a first dielectric layer over the profile layer. The profile layer and the dielectric layer are then etched to define a first device profile. A second profile layer for defining a second device is then deposited over the exposed substrate. The second profile is then selectively etched to define a second device profile. This process can be extended to more than two different device types monolithically integrated on a common substrate as long as the first developed devices are robust enough to handle the temperature cycling involved with developing the subsequent devices.
摘要翻译：一种用于在包括PIN二极管器件，HBT器件，HEMT器件和MESFET器件的组合的公共衬底上制造单片集成电路器件的选择性分子束外延的方法。该方法包括将一个器件的轮廓层沉积在合适的衬底上，然后在轮廓层上沉积第一介电层。然后蚀刻轮廓层和电介质层以限定第一装置轮廓。用于限定第二装置的第二轮廓层然后沉积在暴露的基底上。然后选择性地蚀刻第二轮廓以限定第二装置轮廓。只要第一个开发的设备足够坚固以处理与后续设备相关的温度循环，该过程可以扩展到单个集成在公共基板上的多于两种不同的设备类型。

3. 发明授权

US5986517A Low-loss air suspended radially combined patch for N-way RF switch 失效
标题翻译：低损耗空气悬挂式径向组合贴片，用于N路RF开关
公开(公告)号：US5986517A
公开(公告)日：1999-11-16
申请号：US3197
申请日：1998-01-06
申请人： Kevin W. Kobayashi , Aaron K. Oki
发明人： Kevin W. Kobayashi , Aaron K. Oki
IPC分类号： H01P1/12 , H01P1/15 , H01P11/00
CPC分类号： H01P1/15 , H01P11/003
摘要： A microstrip switch includes N-input switch arms and an output port formed from a microstrip transmission line. Each input switch arm includes one or more p-i-n diodes. The input switch arms as well as the output port are connected at a radially combined center patch. In order to improve the insertion losses at millimeter wave frequencies, the center patch is air suspended in order to reduce the parasitic shunt capacitance in order to extend the low pass frequency response of the switch.
摘要翻译：微带开关包括N输入开关臂和由微带传输线形成的输出端口。每个输入开关臂包括一个或多个p-i-n二极管。输入开关臂以及输出端口连接在径向组合的中心贴片上。为了提高毫米波频率下的插入损耗，中心贴片为空气悬浮，以减小寄生并联电容，以扩展开关的低通频率响应。

4. 发明授权

US08451059B1 Capacitively-coupled distributed amplifier with baseband performance 有权
标题翻译：具有基带性能的电容耦合分布式放大器
公开(公告)号：US08451059B1
公开(公告)日：2013-05-28
申请号：US13154910
申请日：2011-06-07
申请人： Kevin W. Kobayashi
发明人： Kevin W. Kobayashi
IPC分类号： H03F3/60
CPC分类号： H03F3/605
摘要： The present disclosure relates to a capacitively-coupled distributed amplifier (DA) having an input line and an output line that are coupled to one another through a broadband interface network and DA segments. The input line receives an input signal and the output line provides an output signal based on amplifying the input signal. The broadband interface network includes a group of capacitive elements coupled between the input line and the DA segments to extend a gain-bandwidth product of the DA. The broadband interface network further includes a resistor divider network coupled between the input line and the DA segments to extend a lower end of an operating bandwidth of the DA. As such, the operating bandwidth of the DA may extend from baseband frequencies to microwave frequencies.
摘要翻译：本发明涉及具有通过宽带接口网络和DA段彼此耦合的输入线和输出线的电容耦合分布式放大器（DA）。输入线接收输入信号，并且输出线基于放大输入信号提供输出信号。宽带接口网络包括耦合在输入线和DA段之间的一组电容元件，以扩展DA的增益带宽乘积。宽带接口网络还包括耦合在输入线和DA段之间的电阻分压器网络，以扩展DA的工作带宽的下端。这样，DA的工作带宽可以从基带频率延伸到微波频率。

5. 发明申请

US20110316635A1 TRIPLET TRANSCONDUCTOR 有权
公开(公告)号：US20110316635A1
公开(公告)日：2011-12-29
申请号：US13074051
申请日：2011-03-29
申请人： Kevin W. Kobayashi
发明人： Kevin W. Kobayashi
IPC分类号： H03F3/04
CPC分类号： H03F1/32 , H03F1/0261 , H03F3/211 , H03F2200/93
摘要： To reduce a knee voltage of a Darlington amplifier, a negative voltage is applied by a depletion mode FET between the emitter of one amplifying transistor and the base of another amplifying transistor to provide a reduced potential, which reduces the knee voltage of the Darlington amplifier. Reducing the knee voltage of the Darlington amplifier decreases the size of a saturation region thereby increasing the linearity of the Darlington amplifier.
摘要翻译：为了降低达林顿放大器的拐点电压，通过耗尽型FET在一个放大晶体管的发射极和另一个放大晶体管的基极之间施加负电压，以提供降低的电位，从而降低达林顿放大器的拐点电压。降低达林顿放大器的拐点电压会降低饱和区域的大小，从而增加达林顿放大器的线性度。

6. 发明授权

US08058930B1 Capacitively-coupled non-uniformly distributed amplifier 有权
标题翻译：电容耦合非均匀分布放大器
公开(公告)号：US08058930B1
公开(公告)日：2011-11-15
申请号：US12651726
申请日：2010-01-04
申请人： Kevin W. Kobayashi
发明人： Kevin W. Kobayashi
IPC分类号： H03F3/60
CPC分类号： A62B23/06
摘要： The present disclosure relates to a capacitively-coupled non-uniformly distributed amplifier (NDA) having an input line and an output line that are coupled to one another through an input network and DA segments. The input network includes a group of capacitive elements coupled between the input line and the DA segments to extend a gain-bandwidth product of the NDA. The output line includes inductive elements, and since the NDA is non-uniformly distributed, an inductance of each inductive element decreases moving from an input end of the output line to an output end of the output line to compensate for decreasing impedance along the output line. To compensate for phase velocity variations along the output line, a capacitance of each capacitive element that is coupled to the input line decreases moving from an input end of the input line to an output end of the input line.
摘要翻译：本公开涉及具有通过输入网络和DA段彼此耦合的输入线和输出线的电容耦合非均匀分布放大器（NDA）。输入网络包括耦合在输入线和DA段之间的一组电容元件，以扩展NDA的增益带宽乘积。输出线包括电感元件，并且由于NDA不均匀分布，每个电感元件的电感减小，从输出线的输入端移动到输出线的输出端，以补偿沿着输出线的减小的阻抗。为了补偿沿着输出线的相速度变化，耦合到输入线的每个电容元件的电容减小了从输入线的输入端到输入线的输出端的移动。

7. 发明授权

US06639473B1 Method and/or apparatus for controlling a common-base amplifier 有权
标题翻译：用于控制共基放大器的方法和/或装置
公开(公告)号：US06639473B1
公开(公告)日：2003-10-28
申请号：US10123503
申请日：2002-04-16
申请人： Kevin W. Kobayashi
发明人： Kevin W. Kobayashi
IPC分类号： H03F308
CPC分类号： H03F3/08 , H03F2200/72
摘要： An apparatus comprising a common-base amplifier circuit and a control circuit. The amplifier circuit may be configured to generate an output signal having a transimpedance bandwidth in response to an input signal. The control circuit may be (i) coupled between the output signal and the input signal and (ii) configured to provide a DC offset adjustment by providing current steering at the input signal.
摘要翻译：一种包括公共基极放大器电路和控制电路的装置。放大器电路可以被配置为响应于输入信号产生具有跨阻带宽的输出信号。控制电路可以（i）耦合在输出信号和输入信号之间，并且（ii）被配置为通过在输入信号处提供电流转向来提供DC偏移调整。

8. 发明授权

US6054889A Mixer with improved linear range 失效
标题翻译：搅拌机具有改善的线性范围
公开(公告)号：US6054889A
公开(公告)日：2000-04-25
申请号：US967412
申请日：1997-11-11
申请人： Kevin W. Kobayashi
发明人： Kevin W. Kobayashi
IPC分类号： G06G7/163 , H03D7/14 , G06F7/44
CPC分类号： H03D7/1433 , H03D7/1408 , H03D7/1425 , H03D7/1458 , H03D7/1491 , H03D2200/0033 , H03D2200/0084 , H03D2200/0088
摘要： A wide dynamic range bilinear multiplier implemented with an improved Gilbert cell mixer topology linearizies the top quad core of transistors Q1, Q2, Q3 and Q4 to provide a true bilinear multiplier whose output is linearly related to both inputs over a relatively substantial input power range without the need for an additional diode predistortion circuit or increased voltage. In order to improve the linearity of the upper quad core of transistors Q1, Q2, Q3 and Q4, these transistors Q1, Q2, Q3 and Q4 are implemented as either multi-tanh doublets or multi-tanh triplets. Each multi-tanh doublet includes two pair of common emitter configured transistors Q.sub.xe and Q.sub.xae. The linear input voltage range of the multi-tanh doublets is maximized by proper selection of the emitter areas Q.sub.xae relative to Q.sub.xe, where Ae is an area factor greater than 1. Each of the multi-tanh doublets is connected to the mirror current driver, formed from a pair of common emitter connected transistors, which act as current sinks for each of the multi-tanh doublets. In alternate embodiment of the invention, the upper transistor quad core transistors, Q1, Q2, Q3 and Q4 are formed from two multi-tanh triplets. An additional transistor is added to each of the multi-tanh doublets to form the multi-tanh triplets. In addition, another transistor is added to each of the mirror current driver circuits for each of the multi-tanh triplets. The use of the multi-tanh doublets and multi-tanh triplets allow the linear range of the upper quad transistor core transistors Q1, Q2, Q3 and Q4 to extended without the use of additional diode predistortion circuits or other performance penalties.
摘要翻译：用改进的吉尔伯特细胞混合器拓扑结构实现的宽动态范围双线性乘法器将晶体管Q1，Q2，Q3和Q4的顶部四核线性化，以提供真正的双线性乘法器，其输出在相对实质的输入功率范围上与两个输入线性相关，没有需要额外的二极管预失真电路或增加电压。为了提高晶体管Q1，Q2，Q3和Q4的上四核的线性度，这些晶体管Q1，Q2，Q3和Q4被实现为多tanh双峰或多tanh三元组。每个多tanh双层包括两对共同发射极配置晶体管Qxe和Qxae。通过适当选择发射极区域Qxae相对于Qxe，多tanh双峰值的线性输入电压范围最大化，其中Ae是大于1的面积因子。多tanh双峰连接到镜面电流驱动器，由一对共同的发射极连接的晶体管形成，其作为多tanh双峰的每一个的电流吸收。在本发明的替代实施例中，上部晶体管四核晶体管Q1，Q2，Q3和Q4由两个多tanh三元组形成。将多个tanh双峰中的每一个添加另外的晶体管以形成多tanh三重态。此外，对于多tanh三元组中的每一个，向晶体管电流驱动器电路中的每一个添加另一个晶体管。使用多tanh双峰和多tanh三元组可以使上四芯晶体管核心晶体管Q1，Q2，Q3和Q4的线性范围扩展，而不需要额外的二极管预失真电路或其他性能损失。

9. 发明授权

US5559472A Loss compensated gain cell for distributed amplifiers 失效
标题翻译：用于分布式放大器的损耗补偿增益单元
公开(公告)号：US5559472A
公开(公告)日：1996-09-24
申请号：US433266
申请日：1995-05-02
申请人： Kevin W. Kobayashi
发明人： Kevin W. Kobayashi
IPC分类号： H03F1/22 , H03F3/60 , H03F1/34 , H03F3/19
CPC分类号： H03F3/605 , H03F1/22
摘要： An amplifier includes an amplifier input and an amplifier output. A gain cell is coupled between the amplifier input and the amplifier output and provides gain. The gain cell includes an input device to the amplifier input for reducing input capacitance and resistive losses, and an output device coupled to the amplifier output for reducing output resistive losses. The gain cell can further include a feedback device coupled to the gain cell output for stabilizing the gain cell. The gain cell input includes a common-collector bipolar transistor and the gain cell output includes a common-base bipolar transistor in series with a common-emitter bipolar transistor. Because of the low input and output resistive losses and a low input capacitance, the gain cell can be incorporated into a distributed amplifier having numerous stages without decreasing gain or bandwidth performance.
摘要翻译：放大器包括放大器输入和放大器输出。增益单元耦合在放大器输入和放大器输出之间，并提供增益。增益单元包括用于降低输入电容和电阻损耗的放大器输入的输入装置，以及耦合到放大器输出的输出装置，用于减小输出电阻损耗。增益单元还可以包括耦合到增益单元输出的反馈装置，用于稳定增益单元。增益单元输入包括公共集电极双极晶体管，并且增益单元输出包括与共射极双极晶体管串联的公共基极双极晶体管。由于低输入和输出电阻损耗和低输入电容，增益单元可以并入具有多个级的分布式放大器，而不降低增益或带宽性能。

10. 发明授权

US5389896A HBT monolithic variable gain amplifier with bias compensation and buffering 失效
标题翻译：具有偏置补偿和缓冲功能的HBT单片可变增益放大器
公开(公告)号：US5389896A
公开(公告)日：1995-02-14
申请号：US200990
申请日：1994-02-24
申请人： Kevin W. Kobayashi
发明人： Kevin W. Kobayashi
IPC分类号： H03G5/16 , H03F1/34 , H03F1/48 , H03F3/343 , H03G1/00 , H03G3/00 , H03G3/12
CPC分类号： H03G3/007 , H03G1/0058
摘要： A variable gain amplifier is provided which includes a transistor amplifier having a first bipolar transistor with a base connected to an input for receiving an input signal. The first transistor has a collector coupled to an output. A parallel feedback path is connected between the collector and the base of the first transistor. A series feedback path is connected to an emitter of the first transistor. The series feedback path has a PIN diode which operates as a variable resistance element and receives a variable gain control signal so as to generate a variable gain. A bias compensation network is connected to the variable resistance element for generating a variable current source that provides current bias to the variable resistance element. In addition, a buffer transistor may be further coupled between the collector of the first transistor and the output to further enhance gain performance. The buffer transistor may be biased through a current source transistor.
摘要翻译：提供了一种可变增益放大器，其包括具有第一双极晶体管的晶体管放大器，其基极连接到用于接收输入信号的输入端。第一晶体管具有耦合到输出的集电极。并联反馈路径连接在第一晶体管的集电极和基极之间。串联反馈路径连接到第一晶体管的发射极。串联反馈路径具有PIN二极管，其作为可变电阻元件工作，并接收可变增益控制信号以产生可变增益。偏置补偿网络连接到可变电阻元件，用于产生向可变电阻元件提供电流偏置的可变电流源。此外，缓冲晶体管可以进一步耦合在第一晶体管的集电极和输出之间，以进一步增强增益性能。缓冲晶体管可以通过电流源晶体管偏置。

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