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1. 发明授权

US6072371A Quenchable VCO for switched band synthesizer applications 失效
标题翻译：用于切换频带合成器应用的可淬火VCO
公开(公告)号：US6072371A
公开(公告)日：2000-06-06
申请号：US876275
申请日：1997-06-16
申请人： Kevin W. Kobayashi , Duncan M. Smith , Aaron K. Oki , Arvind K. Sharma , Barry R. Allen
发明人： Kevin W. Kobayashi , Duncan M. Smith , Aaron K. Oki , Arvind K. Sharma , Barry R. Allen
IPC分类号： H03L7/099 , H03B5/02 , H03B5/18 , H03B5/00 , H03B5/12
CPC分类号： H03B5/1847
摘要： A quenchable VCO that is adapted to be used in switched band synthesizer applications. The VCO may be formed from a heterojunction bipolar transistor (HBT) in a common collector configuration. A quenching circuit which includes a p-i-n diode, is electrically coupled in series with the collector of the HBT. The p-i-n diode is adapted to be monolithically integrated with the HBT. Since the p-i-n diode is electrically connected to the collector of the HBT, as opposed to the base and emitter terminals of the HBT, which forms the main oscillator feedback loop, the Q-factor of the p-i-n diode will have relatively less loading on the phase noise of the HBT oscillator. Moreover, since the p-i-n diode is isolated from the base-emitter junction, the configuration will result in reduced frequency pulling and generation of spurious oscillation and transient effects due to the switching of the p-i-n diode quenched circuit. The use of a p-i-n diode for quenching of VCO also provides other inherent advantages over other types of semi-conductor switches, such as FET, Schottky diodes, PN diodes for quenchable VCO applications because p-i-n diodes are relative insensitive to RF and noise modulation. Because the p-i-n diode can be constructed from existing HBT collector-base MBE epitaxy layers, the quenching circuit can be manufactured relatively inexpensively.
摘要翻译：一种适用于切换频带合成器应用的可淬火VCO。 VCO可以由公共集电器配置中的异质结双极晶体管（HBT）形成。包括p-i-n二极管的淬火电路与HBT的集电器串联电耦合。 p-i-n二极管适于与HBT单片集成。由于pin二极管与HBT的集电极电连接，与形成主振荡器反馈环路的HBT的基极和发射极端子相反，因此pin二极管的Q因子在相位上的负载相对较小 HBT振荡器的噪声。此外，由于p-i-n二极管与基极 - 发射极结隔离，所以由于p-i-n二极管骤冷电路的切换，该结构将导致降低的频率拉动和寄生振荡的产生以及瞬态效应。与其他类型的半导体开关（例如FET，肖特基二极管，用于可淬灭的VCO应用的PN二极管）相比，使用p-i-n二极管来淬灭VCO也具有其他固有的优点，因为p-i-n二极管对RF和噪声调制相对不敏感。因为p-i-n二极管可以由现有的HBT集电极基极MBE外延层构成，所以可以相对廉价地制造淬火电路。

2. 发明授权

US5231361A Voltage controlled push-push oscillator with parallel resonant tank circuits 失效
标题翻译：具有并联谐振回路的压控推挽振荡器
公开(公告)号：US5231361A
公开(公告)日：1993-07-27
申请号：US474909
申请日：1990-02-05
申请人： Duncan M. Smith , Barry R. Allen
发明人： Duncan M. Smith , Barry R. Allen
IPC分类号： H03B1/00 , H03B5/18
CPC分类号： H03B5/1847 , H03B2200/004 , H03B2200/007 , H03B2200/0098 , H03B2201/0208
摘要： The present invention resides in a push-push voltage controlled oscillator (VCO) utilizing parallel LC resonant tank circuits for improved phase noise characteristics. The push-push VCO of the present invention includes two voltage controlled oscillators connected in parallel and in phase opposition, with each oscillator including a transistor connected in series with the parallel LC resonant tank circuit. The oscillators operate at the same resonant frequency f.sub.0, but are 180 degrees out of phase. Therefore, the fundamental and odd harmonics of the resonant frequency f.sub.0 cancel each other out and the even harmonics add together to produce an output signal at twice the resonant frequency f.sub.0.
摘要翻译：本发明在于推进压控振荡器（VCO），其利用并联LC谐振回路来改善相位噪声特性。本发明的推挽VCO包括并联连接和相位相对的两个压控振荡器，每个振荡器包括与并联LC谐振回路串联的晶体管。振荡器以相同的谐振频率f0工作，但相位相差180度。因此，谐振频率f0的基波和奇次谐波彼此抵消，偶次谐波相加在一起，以产生谐振频率f0的两倍的输出信号。

3. 发明授权

US06295026B1 Enhanced direct radiating array 有权
标题翻译：增强型直接辐射阵列
公开(公告)号：US06295026B1
公开(公告)日：2001-09-25
申请号：US09443526
申请日：1999-11-19
申请人： Chun-Hong H. Chen , Barry R. Allen , Kenneth T. Yano , Mark Kintis , Steven S. Kuo
发明人： Chun-Hong H. Chen , Barry R. Allen , Kenneth T. Yano , Mark Kintis , Steven S. Kuo
IPC分类号： H01Q322
CPC分类号： H01Q3/24 , H01Q1/288 , H01Q3/26 , H01Q3/40 , H01Q25/00
摘要： An apparatus (800) and method (1000) for forming a shapeable and directable composite beam (305) from a plurality of pixel beams (302). The apparatus (800) includes a front-end unit (810) which communicates element signals through antenna array elements (808). The apparatus (800) also includes a back-end unit (850) which forms the composite beam from a set of pixel beams by converting between a composite signal and a set of corresponding pixel signals. The back-end unit (850) further adjusts the amplitude and phase of the set of pixel signals to form the composite beam. The apparatus (800) further includes an interconnecting beamforming network (820) interposed between the back-end unit (850) and the front-end unit (810) which couples the back-end unit (850) to the front-end unit (810) by converting between the pixel signals of the back-end unit (850) and the element signals of the front-end unit (810). The method (1100) includes determining a desired shape and direction for the composite beam (1110). The method (1100) then selects a set of pixel beams (1120) with which to form the composite beam. The method (1100) converts between the composite signal and a set of pixel signals corresponding to the set of pixel beams (1140). The method forms the composite beam (1150) by adjusting the amplitude and phase of the set of pixel signals.
摘要翻译：一种用于从多个像素光束（302）形成可成形和可定向的复合光束（305）的装置（800）和方法（1000）。装置（800）包括通过天线阵列元件（808）传送元件信号的前端单元（810）。设备（800）还包括后端单元（850），后端单元（850）通过在复合信号和一组对应的像素信号之间进行转换来形成来自一组像素波束的合成波束。后端单元（850）进一步调整该组像素信号的幅度和相位以形成复合波束。该装置（800）还包括插入在后端单元（850）和前端单元（810）之间的互连波束形成网络（820），该后端单元（850）将后端单元（850）耦合到前端单元 810），通过在后端单元（850）的像素信号和前端单元（810）的元件信号之间进行转换。方法（1100）包括确定组合梁（1110）的期望形状和方向。方法（1100）然后选择一组像素束（1120），用以形成复合束。方法（1100）在复合信号和对应于该组像素波束的一组像素信号之间进行转换（1140）。该方法通过调整该组像素信号的幅度和相位来形成复合波束（1150）。

4. 发明授权

US06207901B1 Low loss thermal block RF cable and method for forming RF cable 失效
标题翻译：低损耗热阻RF电缆和RF电缆的形成方法
公开(公告)号：US06207901B1
公开(公告)日：2001-03-27
申请号：US09285032
申请日：1999-04-01
申请人： Andrew D. Smith , Barry R. Allen
发明人： Andrew D. Smith , Barry R. Allen
IPC分类号： H01B718
CPC分类号： H01P1/30 , H01P3/06
摘要： An RF cable contains an coaxial inner conductor and a coaxial outer shield surrounding the inner conductor in a concentric arrangement. Quarter-wave series sections in the inner conductor and the outer shield severs a direct thermal path along the RF cable, providing low thermal loading for a cryogenic-to-ambient temperature interconnection. The resonant structure of the RF cable permits propagation alternating current and blocks direct current. A method of forming the RF cable comprises depositing metal on a substrate composed of a polymer film having very low thermal conductivity, and winding the metallized substrate into a tubular configuration. The inner conductor may extend laterally beyond the outer shield to provide points of electrical contact.
摘要翻译： RF电缆包含同轴的内部导体和以同心布置围绕内部导体的同轴外部屏蔽。内部导体和外部屏蔽中的四分之一波段部分切断沿着RF电缆的直接热路径，为低温环境温度互连提供低热负载。 RF电缆的谐振结构允许传播交流电流并阻止直流电流。形成RF电缆的方法包括在由具有非常低导热性的聚合物膜构成的基底上沉积金属，并将金属化基板卷绕成管状构造。内导体可以横向延伸超过外屏蔽以提供电接触点。

5. 发明授权

US5815113A Monolithic, low-noise, synchronous direct detection receiver for passive microwave/millimeter-wave radiometric imaging systems 失效
公开(公告)号：US5815113A
公开(公告)日：1998-09-29
申请号：US696451
申请日：1996-08-13
申请人： Chung-Wen Dennis Lo , Barry R. Allen , Eric W. Lin , Gee Samuel Dow , Paul Shu Chung Lee
发明人： Chung-Wen Dennis Lo , Barry R. Allen , Eric W. Lin , Gee Samuel Dow , Paul Shu Chung Lee
IPC分类号： H03F3/38 , H03D1/10 , H03F3/60 , H03F3/72 , H04B1/18 , H04B1/30 , G01S3/02
CPC分类号： H04B1/30 , H03D1/10 , H03F3/602 , H03F3/72 , H03F2200/198 , H03F2200/294 , H03F2200/372
摘要： A direct detection receiver for a passive microwave and millimeter wave radiometric imaging system. The receiver includes a balanced switch low-noise amplifier (BSLNA). A front-end, low-noise amplifier (LNA) is inserted before the BSLNA to achieve a low-noise figure, as well as provide sufficient gain to minimize the input noise figure degradation due to loss of the BSLNA. A high-electron mobility transistor (HEMT) diode is used as a power detector. The front-end amplifier, BSLNA and diode are process compatible for monolithic integration.

6. 发明授权

US07253701B2 Multiplexed amplifier 有权
标题翻译：多路复用放大器
公开(公告)号：US07253701B2
公开(公告)日：2007-08-07
申请号：US10999849
申请日：2004-11-30
申请人： Andrew D. Smith , Barry R. Allen
发明人： Andrew D. Smith , Barry R. Allen
IPC分类号： H01P5/12
CPC分类号： H01P1/2135
摘要： Multiple sensor signals are used to modulate an equal number of frequency-spaced carrier signals in a directional parametric upconverting amplifier. Basically, the carrier signals are separated in a cascaded or parallel configuration of narrow frequency passbands, which also modulate the carrier signals with low-frequency sensor signals. The modulated carrier signals are multiplexed and output over a single signal path, thereby reducing power dissipation. Preferably implemented in superconducting circuitry, the multiplexed amplifier facilitates multiplexing of as many as hundreds of sensor signals and achieves both amplification and upconverting with minimal dissipation of power.
摘要翻译：多个传感器信号用于在方向参数上变频放大器中调制相等数量的频间隔载波信号。基本上，载波信号以窄频率通带的级联或并联配置分离，窄频率通带也用低频传感器信号调制载波信号。经调制的载波信号被复用并通过单个信号路径输出，从而减少功耗。优选地，在超导电路中实现，多路复用放大器有助于多达数百个传感器信号的复用，并且以最小的功率消耗实现放大和上变频。

7. 发明授权

US06725029B1 Compact, space efficient, sub-harmonic image reject mixer 有权
标题翻译：紧凑，空间高效，亚谐波图像拒绝搅拌机
公开(公告)号：US06725029B1
公开(公告)日：2004-04-20
申请号：US09523088
申请日：2000-03-10
申请人： Barry R. Allen
发明人： Barry R. Allen
IPC分类号： H04B110
CPC分类号： H03D9/0608
摘要： An image reject sub-harmonic mixer that employs less components than known image reject mixers. The mixer includes a 90° RF coupler, two high pass filters, two anti-parallel diode pairs, two low pass filters and a 90° IF coupler. RF and LO signals are applied to isolated input ports of the 90° coupler. In-phase and quadrature-phase copies of the RF and LO signals are provided at output ports of the coupler. The diode pairs mix the RF and LO signals to generate first and second intermediate frequency signals that are separated in-phase. The high pass filters reject the IF signals to prevent IF power from coupling to the RF and LO ports of the coupler. The low pass filters pass the IF signal and reject the LO and RF signals. Image rejection is obtained by combining the IF outputs of the two diode pair in the 90° IF hybrid.
摘要翻译：使用比已知的图像抑制混合器更少的成分的图像抑制次谐波混合器。混频器包括一个90°RF耦合器，两个高通滤波器，两个反并联二极管对，两个低通滤波器和一个90°IF耦合器。 RF和LO信号被应用于90°耦合器的隔离输入端口。在耦合器的输出端口处提供RF和LO信号的同相和正交相位副本。二极管对混合RF和LO信号以产生同相分离的第一和第二中频信号。高通滤波器抑制IF信号，以防止IF功率耦合到耦合器的RF和LO端口。低通滤波器通过IF信号并拒绝LO和RF信号。通过组合90°IF混合中两个二极管对的IF输出获得图像抑制。

8. 发明授权

US6052024A Monolithic, low-noise, synchronous direct detection receiver for passive microwave/millimeter-wave radiometric imaging systems 失效
标题翻译：用于无源微波/毫米波辐射成像系统的单片，低噪声，同步直接检测接收器
公开(公告)号：US6052024A
公开(公告)日：2000-04-18
申请号：US947525
申请日：1997-08-26
申请人： Chung-Wen Dennis Lo , Barry R. Allen , Eric W. Lin , Gee Samuel Dow , Paul Shu Chung Lee
发明人： Chung-Wen Dennis Lo , Barry R. Allen , Eric W. Lin , Gee Samuel Dow , Paul Shu Chung Lee
IPC分类号： H03F3/38 , H03D1/10 , H03F3/60 , H03F3/72 , H04B1/18 , H04B1/30 , H03F3/68
CPC分类号： H04B1/30 , H03D1/10 , H03F3/602 , H03F3/72 , H03F2200/198 , H03F2200/294 , H03F2200/372
摘要： A direct detection receiver for a passive microwave and millimeter wave radiometric imaging system. The receiver includes a balanced switch low-noise amplifier (BSLNA). A front-end, low-noise amplifier (LNA) is inserted before the BSLNA to achieve a low-noise figure, as well as provide sufficient gain to minimize the input noise figure degradation due to loss of the BSLNA. A high-electron mobility transistor (HEMT) diode is used as a power detector. The front-end amplifier, BSLNA and diode are process compatible for monolithic integration.
摘要翻译：一种用于无源微波和毫米波辐射成像系统的直接检测接收器。接收机包括平衡开关低噪声放大器（BSLNA）。在BSLNA之前插入前端低噪声放大器（LNA），以实现低噪声系数，并提供足够的增益，以最大限度地减少输入噪声系数由于BSLNA的损耗而退化。高电子迁移率晶体管（HEMT）二极管用作功率检测器。前端放大器，BSLNA和二极管是工艺兼容的单片集成。

9. 发明授权

US06801088B2 Dual gate low noise amplifier 有权
标题翻译：双门低噪声放大器
公开(公告)号：US06801088B2
公开(公告)日：2004-10-05
申请号：US10364999
申请日：2003-02-12
申请人： Barry R. Allen , Yun H. Chung , David J. Brunone
发明人： Barry R. Allen , Yun H. Chung , David J. Brunone
IPC分类号： H03F316
CPC分类号： H03F1/226 , H03F1/306 , H03F1/342 , H03F2200/294 , H03F2200/372
摘要： A low noise amplifier topology includes a dual gate transistor device, such as a HEMT device and employs resistive feedback with a DC block associated with the amplifier output to a desired high voltage gain and a low noise figure over a desired range of frequencies.
摘要翻译：低噪声放大器拓扑包括双栅极晶体管器件，例如HEMT器件，并且采用具有与放大器输出相关联的DC块的电阻反馈到期望的高电压增益和在期望的频率范围上的低噪声系数。

10. 发明授权

US06760454B1 Passive voice-activated microphone and transceiver system 失效
标题翻译：被动语音激活麦克风和收发器系统
公开(公告)号：US06760454B1
公开(公告)日：2004-07-06
申请号：US09632444
申请日：2000-08-04
申请人： Gregory A. Shreve , Robert B. Stokes , Marshall Y. Huang , Barry R. Allen
发明人： Gregory A. Shreve , Robert B. Stokes , Marshall Y. Huang , Barry R. Allen
IPC分类号： H03G320
CPC分类号： H04R1/083
摘要： A voice-activated microphone and transceiver system includes an interrogator unit for transmitting a signal, receiving a modulated signal, and demodulating the modulated signal such that the difference between the transmitted signal and the modulated signal correspond to a unique sound wave signal. An acoustically driven microphone unit is also included for receiving the signal from the interrogator unit, modulating the signal with the sound wave signal, wherein the sound wave signal contains instructions for controlling an electronic device, and transmitting the modulated signal back to the interrogator unit for analysis by a signal processor.
摘要翻译：语音激活麦克风和收发机系统包括用于发送信号，接收调制信号和解调调制信号的询问器单元，使得发送信号和调制信号之间的差异对应于独特的声波信号。声学驱动的麦克风单元还包括用于接收来自询问器单元的信号，用声波信号调制信号，其中声波信号包含用于控制电子设备的指令，并将调制信号发送回询问器单元由信号处理器进行分析。

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