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1. 发明授权

US06210483B1 Anti-notch thinning heater 有权
标题翻译：防间距变薄加热器
公开(公告)号：US06210483B1
公开(公告)日：2001-04-03
申请号：US09203419
申请日：1998-12-02
申请人： Ken Tsai , Steve Ghanayem , Joseph Yudovsky , Ken Lai
发明人： Ken Tsai , Steve Ghanayem , Joseph Yudovsky , Ken Lai
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/455 , H01J37/3244
摘要： The invention provides an apparatus for excluding unwanted deposition at the edge of a substrate which prevents excess purge gas from flowing over the surface of the substrate at the region adjacent a notch on a substrate. Another aspect of the invention provides a wider purge gas channel that prevents excess purge gas from flowing over the surface of the substrate. Still another aspect of the present invention provides a purge gas guide that includes a notch therein to prevent excess purge gas from adversely affecting deposition at the vicinity of the substrate notch.
摘要翻译：本发明提供了一种用于在衬底的边缘排除不需要的沉积的装置，其防止过量的清洗气体在与衬底上的凹口相邻的区域上流过衬底的表面。本发明的另一方面提供了一种更宽的吹扫气体通道，其防止过量的吹扫气体流过衬底的表面。本发明的另一方面提供了一种清洗气体引导件，其包括其中的切口，以防止过量的吹扫气体不利地影响在基板凹口附近的沉积。

2. 发明申请

US20060009034A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060009034A1
公开(公告)日：2006-01-12
申请号：US11038592
申请日：2005-01-19
申请人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
发明人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

3. 发明申请

US20050287807A1 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US20050287807A1
公开(公告)日：2005-12-29
申请号：US11206491
申请日：2005-08-18
申请人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
发明人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

4. 发明申请

US20070009658A1 Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process 审中-公开
标题翻译：脉冲成核增强成核技术，用于改进WCVD工艺的台阶覆盖和更好的间隙填充
公开(公告)号：US20070009658A1
公开(公告)日：2007-01-11
申请号：US10023125
申请日：2001-12-17
申请人： Jong Yoo , Xinliang Lu , Chiliang Chen , Ken Lai , Chien-Teh Kao
发明人： Jong Yoo , Xinliang Lu , Chiliang Chen , Ken Lai , Chien-Teh Kao
IPC分类号： C23C16/00
CPC分类号： C23C16/14 , C23C16/45525 , C30B25/02 , C30B29/02 , H01L21/28562
摘要： A process and an apparatus is disclosed for forming refractory metal layers employing pulse nucleation to minimize formation of a concentration boundary layer during nucleation. The surface of a substrate is nucleated in several steps. Following each nucleation step is a removal step in which all reactants and by-products of the nucleation process are removed from the processing chamber. Removal may be done by either rapidly evacuating the processing chamber, rapidly introducing a purge gas therein or both. After removal of the process gas and by-products from the processing chamber, additional nucleation steps may be commenced to obtain a nucleation layer of desired thickness. After formation of the nucleation layer, a layer is formed adjacent to the nucleation layer using standard bulk deposition techniques.
摘要翻译：公开了一种用于形成使用脉冲成核的难熔金属层以最小化成核期间的浓度边界层的形成的方法和装置。基底的表面在几个步骤中成核。在每个成核步骤之后是去除步骤，其中成核过程的所有反应物和副产物从处理室中除去。可以通过快速排空处理室，在其中快速引入吹扫气体或两者来进行去除。在从处理室除去工艺气体和副产物之后，可以开始另外的成核步骤以获得所需厚度的成核层。在形成成核层之后，使用标准体积沉积技术形成邻近成核层的层。

5. 发明申请

US20060264031A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 有权
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20060264031A1
公开(公告)日：2006-11-23
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred Mak , Xinliang Lu , Ken Lai , Karl Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred Mak , Xinliang Lu , Ken Lai , Karl Littau
IPC分类号： H01L21/4763
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

6. 发明授权

US09367221B2 System and method for sequencing rotatable images 有权
标题翻译：用于对可旋转图像进行排序的系统和方法
公开(公告)号：US09367221B2
公开(公告)日：2016-06-14
申请号：US14016165
申请日：2013-09-02
申请人： Ken Lai
发明人： Ken Lai
IPC分类号： G06F3/0484 , G06F3/0481 , G11B27/34 , G02B27/22
CPC分类号： G06F3/04845 , G02B27/2292 , G06F3/04815 , G11B27/34
摘要： A system and method for sequencing rotatable images are disclosed. In at least one embodiment, an image database contains an at least one image collection comprising a plurality of view sets. The view sets each comprise a parallel sequence of images that depicts the same sequentially formatted subject matter as the other view sets in the image collection, but from a unique common perspective point. A unique view index is assigned to each view set in the at least one image collection, while a unique frame index is assigned to each image within each view set. Using these view and frame indices, the content module allows the user to dynamically and selectively choose the common perspective point at which to view the sequentially formatted subject matter at any step in the sequence of images, thereby providing a 360 degree, selectively rotatable view of the subject matter.
摘要翻译：公开了一种可旋转图像排序的系统和方法。在至少一个实施例中，图像数据库包含包括多个视图集的至少一个图像集合。视图集各自包括平行的图像序列，其描绘与图像集合中的其他视图集相同的顺序格式化的主题，但是从唯一的共同的观点来看。将唯一视图索引分配给至少一个图像集合中设置的每个视图，而将唯一的帧索引分配给每个视图集中的每个图像。使用这些视图和帧索引，内容模块允许用户动态地和选择性地选择在图像序列中的任何步骤处观看顺序格式化的主题的公共透视点，从而提供360度，可选择地旋转的视图主题。

7. 发明申请

US20150067499A1 System and Method for Sequencing Rotatable Images 审中-公开
标题翻译：用于排序可旋转图像的系统和方法
公开(公告)号：US20150067499A1
公开(公告)日：2015-03-05
申请号：US14016165
申请日：2013-09-02
申请人： Ken Lai
发明人： Ken Lai
IPC分类号： G06F3/0484
CPC分类号： G06F3/04845 , G02B27/2292 , G06F3/04815 , G11B27/34
摘要： A system and method for sequencing rotatable images are disclosed. In at least one embodiment, an image database contains an at least one image collection comprising a plurality of view sets. The view sets each comprise a parallel sequence of images that depicts the same sequentially formatted subject matter as the other view sets in the image collection, but from a unique common perspective point. A unique view index is assigned to each view set in the at least one image collection, while a unique frame index is assigned to each image within each view set. Using these view and frame indices, the content module allows the user to dynamically and selectively choose the common perspective point at which to view the sequentially formatted subject matter at any step in the sequence of images, thereby providing a 360 degree, selectively rotatable view of the subject matter.
摘要翻译：公开了一种用于对可旋转图像进行排序的系统和方法。在至少一个实施例中，图像数据库包含包括多个视图集的至少一个图像集合。视图集各自包括平行的图像序列，其描绘与图像集合中的其他视图集相同的顺序格式化的主题，但是从唯一的共同的观点来看。将唯一视图索引分配给至少一个图像集合中设置的每个视图，而将唯一的帧索引分配给每个视图集中的每个图像。使用这些视图和帧索引，内容模块允许用户动态地和选择性地选择在图像序列中的任何步骤处观看顺序格式化的主题的公共透视点，从而提供360度，可选择地旋转的视图主题。

8. 发明申请

US20070218688A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 失效
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20070218688A1
公开(公告)日：2007-09-20
申请号：US11749016
申请日：2007-05-15
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfredq Mak , Xinliang Lu , Ken Lai , Karl Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfredq Mak , Xinliang Lu , Ken Lai , Karl Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

9. 发明申请

US20060223286A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20060223286A1
公开(公告)日：2006-10-05
申请号：US11423535
申请日：2006-06-12
申请人： Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
发明人： Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
IPC分类号： C23C16/00 , H01L21/20
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

10. 发明申请

US20060040052A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 审中-公开
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060040052A1
公开(公告)日：2006-02-23
申请号：US10418728
申请日：2003-04-18
申请人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
发明人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
IPC分类号： C23C16/00
CPC分类号： C23C16/06 , C23C16/02 , C23C16/0218 , C23C16/0281 , C23C16/045 , C23C16/08 , C23C16/16 , C23C16/45525
摘要： A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a soak. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane, disilane, dichlorosilane and derivatives thereof. A tungsten bulk layer may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
摘要翻译：提供了在基板表面上形成钨层的方法。在一个方面，该方法包括将衬底表面定位在处理室中并将衬底表面暴露于浸泡。然后通过交替地脉冲选择由硅烷，乙硅烷，二氯硅烷及其衍生物组成的组中的含钨化合物和还原气体，在相同的处理室中的基底表面上沉积成核层。然后可以使用循环沉积，化学气相沉积或物理气相沉积技术在成核层上沉积钨体层。

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