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1. 发明授权

US08563442B2 Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate 有权
标题翻译：氮化合物半导体衬底和氮化合物半导体衬底的制造方法以及单晶SiC衬底和单晶SiC衬底的制造方法
公开(公告)号：US08563442B2
公开(公告)日：2013-10-22
申请号：US12997013
申请日：2009-06-09
申请人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
发明人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/8258 , C30B25/02 , C30B29/36 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/0254 , H01L21/02614 , H01L21/8213
摘要： In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.
摘要翻译：为了提供可以得到具有良好结晶性的SiC层的单晶SiC衬底的制造方法，制备具有预定厚度的表面Si层3和嵌入绝缘层4的Si衬底1，并且当Si 将基板1在碳系气体气氛中加热，将表面Si层3转换为单晶SiC层6，将与嵌入绝缘层4的界面8附近的Si层作为残留Si层5 。

2. 发明申请

US20110089433A1 METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE AND NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTAL SIC SUBSTRATE 有权
标题翻译：制造氮化合物半导体衬底和氮化物半导体衬底的方法以及制造单晶SIC衬底和单晶SIC衬底的方法
公开(公告)号：US20110089433A1
公开(公告)日：2011-04-21
申请号：US12997013
申请日：2009-06-09
申请人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
发明人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
IPC分类号： H01L29/24 , C30B25/02 , C30B25/10 , C30B29/06 , C30B29/36
CPC分类号： H01L21/8258 , C30B25/02 , C30B29/36 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/0254 , H01L21/02614 , H01L21/8213
摘要： In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, surface Si layer 3 into a single crystal SIC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.
摘要翻译：为了提供可以得到具有良好结晶性的SiC层的单晶SiC衬底的制造方法，制备具有预定厚度的表面Si层3和嵌入绝缘层4的Si衬底1，并且当Si 将基板1在碳系气体气氛中加热，将表面Si层3变为单晶SiC层6，将表面Si层3转换为单晶SIC层6，在界面8附近的Si层与留下绝缘层4作为残留Si层5。

3. 发明申请

US20130040103A1 METHOD OF MANUFACTURING SINGLE CRYSTAL 3C-SIC SUBSTRATE AND SINGLE CRYSTAL 3C-SIC SUBSTRATE OBTAINED FROM THE MANUFACTURING METHOD 有权
标题翻译：制造单晶3C-SIC基板的方法和从制造方法获得的单晶3C-SIC基板
公开(公告)号：US20130040103A1
公开(公告)日：2013-02-14
申请号：US13638070
申请日：2011-03-14
申请人： Hidetoshi Asamura , Keisuke Kawamura , Satoshi Obara
发明人： Hidetoshi Asamura , Keisuke Kawamura , Satoshi Obara
IPC分类号： C30B25/16 , C30B29/36 , C30B25/14
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/36 , H01L21/0237 , H01L21/02447 , H01L21/02494 , H01L21/02529 , H01L21/02614 , H01L21/02661 , Y10T428/24355
摘要： To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a semiconductor device while simplifying a post process. The method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth is provided. A first growing stage of forming the single crystal 3C-SiC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface is performed. A second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits is performed.
摘要翻译：提供一种制造可以显着减少在外延生长处理中产生的表面缺陷的单晶3C-SiC衬底的方法，并且可以确保作为半导体器件的质量，同时简化后处理。提供了通过外延生长在基底基板上形成单晶3C-SiC层的单晶3C-SiC基板的制造方法。进行形成单晶3C-SiC层的表面状态的第一生长阶段，该表面状态被构造成具有高平坦度的表面和表面上的表面凹坑散射。进行进一步外延生长在第一生长阶段中获得的单晶3C-SiC层以填充表面凹坑的第二生长阶段。

4. 发明授权

US08986448B2 Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method 有权
标题翻译：制造从制造方法获得的单晶3C-SiC衬底和单晶3C-SiC衬底的方法
公开(公告)号：US08986448B2
公开(公告)日：2015-03-24
申请号：US13638070
申请日：2011-03-14
申请人： Hidetoshi Asamura , Keisuke Kawamura , Satoshi Obara
发明人： Hidetoshi Asamura , Keisuke Kawamura , Satoshi Obara
IPC分类号： C30B29/36 , H01L21/02 , C30B25/02
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/36 , H01L21/0237 , H01L21/02447 , H01L21/02494 , H01L21/02529 , H01L21/02614 , H01L21/02661 , Y10T428/24355
摘要： To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a semiconductor device while simplifying a post process. The method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth is provided. A first growing stage of forming the single crystal 3C-SiC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface is performed. A second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits is performed.
摘要翻译：提供一种制造可以显着减少在外延生长处理中产生的表面缺陷的单晶3C-SiC衬底的方法，并且可以确保作为半导体器件的质量，同时简化后处理。提供了通过外延生长在基底基板上形成单晶3C-SiC层的单晶3C-SiC基板的制造方法。进行形成单晶3C-SiC层的表面状态的第一生长阶段，该表面状态被构造成具有高平坦度的表面和表面上的表面凹坑散射。进行进一步外延生长在第一生长阶段中获得的单晶3C-SiC层以填充表面凹坑的第二生长阶段。

5. 发明授权

US08931432B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08931432B2
公开(公告)日：2015-01-13
申请号：US12309634
申请日：2008-02-18
申请人： Keisuke Kawamura , Hiroshi Mashima
发明人： Keisuke Kawamura , Hiroshi Mashima
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C23C16/509 , C23C16/24 , H01J37/32 , H01L21/02
CPC分类号： C23C16/509 , C23C16/24 , H01J37/32091 , H01J37/32183 , H01L21/02532 , H01L21/0262
摘要： A vacuum processing apparatus is provided, in which a deposition characteristic is easily adjusted, and occurrence of difference in deposition characteristic between deposition chambers can be suppressed, and reduction in equipment cost can be achieved, and a deposition method using the vacuum processing apparatus is provided. The vacuum processing apparatus is characterized by having a plurality of discharge electrodes (3a to 3h) that are supplied with high-frequency power from a power supply unit (17a) through both ends (53) thereof, and form plasma with respect to a substrate (8) respectively, and a plurality of matching boxes (3a to 3ht) which tune phases and amplitudes of the high-frequency power supplied to the plurality of discharge electrodes (3a to 3h) at the ends (53) respectively; wherein impedance of the plurality of matching boxes (3a to 3ht) are set to approximately the same value, and the impedance value is a value at which reflected power is approximately minimized, the reflected power being returned to the power supply unit (17a) from one discharge electrode among the plurality of discharge electrodes (3a to 3h).
摘要翻译：提供了一种真空处理装置，其中容易调节沉积特性，并且可以抑制沉积室之间的沉积特性的差异的发生，并且可以实现设备成本的降低，并且提供使用真空处理装置的沉积方法。该真空处理装置的特征在于具有从供电单元（17a）经过其两端（53）供给高频电力的多个放电电极（3a〜3h），并相对于基板形成等离子体（8），以及多个匹配箱（3a〜3ht），分别调整在端部（53）处提供给多个放电电极（3a〜3h）的高频电力的相位和幅度; 其中所述多个匹配箱（3a至3ht）的阻抗被设置为大致相同的值，并且所述阻抗值是反射功率近似最小化的值，所述反射功率从所述反馈功率返回到所述电源单元（17a）多个放电电极（3a〜3h）中的一个放电电极。

6. 发明申请

US20130004708A1 MOLDING APPARATUS, METHOD OF FORMING MOLDED PRODUCT, AND MOLDED PRODUCT 审中-公开
标题翻译：成型设备，成型产品的方法和模制产品
公开(公告)号：US20130004708A1
公开(公告)日：2013-01-03
申请号：US13530542
申请日：2012-06-22
申请人： Shun Kayama , Yukiko Shimizu , Atsuhide Hanyu , Susumu Hoshino , Keisuke Kawamura
发明人： Shun Kayama , Yukiko Shimizu , Atsuhide Hanyu , Susumu Hoshino , Keisuke Kawamura
IPC分类号： B29C45/26 , B32B3/24 , B29C45/00 , B29C45/03 , B29C45/72
CPC分类号： B29C45/2628 , B29C45/5675 , Y10T428/24273
摘要： A molding apparatus includes a cavity mold, a core mold, a core pin, and a cavity pin. After molten resin has been filled in a cavity, at least one of the core pin and the cavity pin is moved to be pressed onto the molten resin so that a part of the molten resin is compressed before the molten resin is cured, and a molded hole is formed by cutting off the compressed part of the molten resin by moving the core pin and the cavity pin.
摘要翻译：模制装置包括腔模，芯模，芯销和腔销。在将熔融树脂填充到空腔中之后，芯销和空心销中的至少一个被移动以压在熔融树脂上，使得熔融树脂的一部分在熔融树脂固化之前被压缩，并且模制通过移动芯销和空腔销来切断熔融树脂的压缩部分而形成孔。

7. 发明授权

US07833587B2 Method for plasma-enhanced chemical vapor deposition and apparatus for plasma-enhanced chemical vapor deposition 有权
标题翻译：等离子体增强化学气相沉积方法和等离子体增强化学气相沉积装置
公开(公告)号：US07833587B2
公开(公告)日：2010-11-16
申请号：US10518371
申请日：2003-10-29
申请人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： H05H1/24 , C23C16/00 , B01J19/08 , G21H1/00 , G21H5/00 , H01F41/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32577
摘要： A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
摘要翻译：提供了一种使膜厚分布特性均匀的方法，通过操纵传输高频电力的电缆的电气特性，避免了高频电力流之间的相位差的产生。安装具有标准长度和真空电缆（20a〜20h，25a〜25h）的同轴电缆（19a〜19h，24a〜24h），通过实际供给高频电力而在基板上形成膜，之后，观察气相沉积的条件，如膜的厚度。基于这些观察，改变了与馈送点和电极相连的同轴电缆的全部长度，这些电极对应于需要调整的衬底上的位置。再次安装同轴电缆，提供与上次操作相同的高频电力，形成薄膜。通过重复上述操作，使形成在基板上的膜的分布均匀。

8. 发明申请

US20090159432A1 Thin-film deposition apparatus using discharge electrode and solar cell fabrication method 审中-公开
标题翻译：使用放电电极和太阳能电池制造方法的薄膜沉积装置
公开(公告)号：US20090159432A1
公开(公告)日：2009-06-25
申请号：US12227970
申请日：2007-08-22
申请人： Shingo Kawano , Eiichiro Ohtsubo , Naoyuki Miyazono , Keisuke Kawamura , Yoshiaki Takeuchi
发明人： Shingo Kawano , Eiichiro Ohtsubo , Naoyuki Miyazono , Keisuke Kawamura , Yoshiaki Takeuchi
IPC分类号： C23C14/34
CPC分类号： C23C16/509 , C23C16/45563 , C23C16/4557 , C23C16/46 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/18 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A discharge electrode, a thin-film deposition apparatus, and a solar cell fabrication method, which suppress the generation of a film thickness distribution and a film quality distribution, are provided. The discharge electrode includes two lateral structures 20 that are substantially parallel to each other and extend in an X direction; and a plurality of longitudinal structures 21a that are provided between the two lateral structures, are substantially parallel to each other, and extend in a Y direction substantially orthogonal to the X direction. The longitudinal structures 21a each include an electrode main body 35 whose one end 35a is connected to one of the lateral structures 20 and whose the other end 35b is connected to the other lateral structure 20; a gas pipe 41 disposed in a gas-pipe accommodating space 36; and a porous body 40. An opening 38 opens to a substrate 8 and is covered with the porous body 40. A gas diffusion path 37 connects the gas-pipe accommodating space 36 and the opening 38. The electrode inner surface 39 faces the gas-pipe accommodating space 36 and opposes the pipe outer surface 42b. A nozzle hole group 42c is arranged in the second direction in the gas pipe 41, and faces a section 39a at a side opposite to the gas diffusion path 37 in the electrode inner surface 39.
摘要翻译：提供抑制膜厚分布的产生和膜质量分布的放电电极，薄膜沉积装置和太阳能电池的制造方法。放电电极包括基本上彼此平行并沿X方向延伸的两个横向结构20; 并且设置在两个横向结构之间的多个纵向结构21a基本上彼此平行，并且在大致正交于X方向的Y方向上延伸。纵向结构21a各自包括电极主体35，其一端35a连接到横向结构20中的一个，另一端35b连接到另一侧向结构20; 设置在气体管容纳空间36中的气体管道41; 和多孔体40.开口38通向基板8并被多孔体40覆盖。气体扩散路37连接气体管容纳空间36和开口38.电极内表面39面对气体 - 管容纳空间36并与管外表面42b相对。喷嘴孔组42c沿气体配管41的第二方向排列，与电极内表面39的与气体扩散路37相反侧的部分39a相对。

9. 发明申请

US20100310785A1 VACUUM PROCESSING APPARATUS AND OPERATING METHOD FOR VACUUM PROCESSING APPARATUS 失效
标题翻译：真空加工设备的真空处理设备和操作方法
公开(公告)号：US20100310785A1
公开(公告)日：2010-12-09
申请号：US12864624
申请日：2008-06-27
申请人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
发明人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
IPC分类号： C23C16/00 , B05C11/00 , B05D3/00
CPC分类号： C23C16/4401 , C23C16/4404 , C23C16/4405 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).
摘要翻译：本发明的目的是提供一种真空处理装置，其能够简单地设定自清洁程序之间的定时间隔，从而具有通用性，能够显着延长该定时间隔，并提高生产效率。在通过将清洁气体供给到在基板（4）上进行成膜处理的成膜室（1）中进行自清洁处理的等离子体CVD装置（100）中，自清洁程序设定在相对于膜沉积处理量的增加而成膜沉积操作时间比（Ps）收敛的范围，其中成膜操作时间比（Ps）由膜沉积的比例相关的操作时间（Tt）与膜沉积相关操作时间（Tt）和清洁相关操作时间（Tc）之和。

10. 发明申请

US20100009096A1 VACUUM PROCESSING APPARATUS AND DEPOSITION METHOD USING THE VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工装置和使用真空加工装置的沉积方法
公开(公告)号：US20100009096A1
公开(公告)日：2010-01-14
申请号：US12309634
申请日：2008-02-18
申请人： Keisuke Kawamura , Hiroshi Mashima
发明人： Keisuke Kawamura , Hiroshi Mashima
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： C23C16/509 , C23C16/24 , H01J37/32091 , H01J37/32183 , H01L21/02532 , H01L21/0262
摘要： A vacuum processing apparatus is provided, in which a deposition characteristic is easily adjusted, and occurrence of difference in deposition characteristic between deposition chambers can be suppressed, and reduction in equipment cost can be achieved, and a deposition method using the vacuum processing apparatus is provided. The vacuum processing apparatus is characterized by having a plurality of discharge electrodes (3a to 3h) that are supplied with high-frequency power from a power supply unit (17a) through both ends (53) thereof, and form plasma with respect to a substrate (8) respectively, and a plurality of matching boxes (3a to 3ht) which tune phases and amplitudes of the high-frequency power supplied to the plurality of discharge electrodes (3a to 3h) at the ends (53) respectively; wherein impedance of the plurality of matching boxes (3a to 3ht) are set to approximately the same value, and the impedance value is a value at which reflected power is approximately minimized, the reflected power being returned to the power supply unit (17a) from one discharge electrode among the plurality of discharge electrodes (3a to 3h).
摘要翻译：提供了一种真空处理装置，其中容易调节沉积特性，并且可以抑制沉积室之间的沉积特性的差异的发生，并且可以实现设备成本的降低，并且提供使用真空处理装置的沉积方法。该真空处理装置的特征在于具有从供电单元（17a）经过其两端（53）供给高频电力的多个放电电极（3a〜3h），并相对于基板形成等离子体（8），以及多个匹配箱（3a〜3ht），分别调整在端部（53）处提供给多个放电电极（3a〜3h）的高频电力的相位和幅度; 其特征在于，所述多个匹配箱（3a〜3ht）的阻抗被设定为大致相同的值，所述阻抗值为反射功率近似最小的值，所述反射功率从所述反馈功率返回到所述电源单元多个放电电极（3a〜3h）中的一个放电电极。

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