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    • 3. 发明申请
    • Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process
    • 等离子体处理系统及其基板加工工艺,等离子体增强化学气相沉积系统及其薄膜沉积工艺
    • US20050223990A1
    • 2005-10-13
    • US10519475
    • 2003-10-01
    • Keisuke KawamuraAkira YamadaHiroshi MashimaKenji TagashiraYoshiaki Takeuchi
    • Keisuke KawamuraAkira YamadaHiroshi MashimaKenji TagashiraYoshiaki Takeuchi
    • H05H1/46B01J19/08C23C16/509H01J37/32H01L21/205C23C16/00
    • H01J37/32082C23C16/509H01J37/32183H01J37/32541
    • An object is to provide apparatuses for plasma processing which can make the distribution of the film thickness of a substance on a substrate uniform, methods of processing a substrate therewith, apparatuses for plasma-enhanced chemical vapor deposition, and methods for film formation therewith. When a desired substance is vapor deposited on the surface of a substrate (3), characteristics of the distribution of the thickness of a film on the substrate having a large area are improved by eliminating local imbalance in the distribution of the film thickness originating from deviation in the distribution of voltage on the ladder electrode (2), by way of adjusting impedance matching between each coaxial cable and corresponding feeding point for the ladder-shaped electrode (2) using branch cables provided to the coaxial cables for supplying high-frequency electric power to a ladder-shaped electrode (2) so as to make the film thickness uniform in the direction at right angles with the direction of fed electric power, whereby high-frequency electric power which is fed to each longitudinal electrode rod (2a) of the ladder-shaped electrode (2) can be adjusted, and distribution of voltage at a right or left part of the substrate and distribution of voltage at a central part of the substrate can be balanced, as well as by way of promoting uniformity in the distribution of the film thickness in the direction of fed electric power, by supplying streams of high-frequency electric power having the same frequency from two power supplies to the ladder-shaped electrode (2) with the phase difference between the high-frequency electric powers being varied over time.
    • 目的在于提供能够使基板上的物质的膜厚分布均匀的等离子体处理装置,用于处理基板的方法,等离子体增强化学气相沉积的装置及其成膜方法。 当在基板(3)的表面上气相沉积所需物质时,通过消除由于偏差导致的膜厚度分布的局部不平衡,改善了具有大面积的基板上的膜的厚度分布特性 在梯形电极(2)上的电压分配中,通过使用提供给用于提供高频电气的同轴电缆的分支电缆来调节每个同轴电缆与梯形电极(2)的相应馈电点之间的阻抗匹配 向梯形电极(2)施加电力以使膜厚度与与馈送电力方向成直角的方向均匀,由此,供给到每个纵向电极棒(2a)的高频电力 可以调节梯形电极(2),并且可以调整基板的右侧或左侧的电压分布以及中心部分的电压分布 可以通过将来自两个电源的具有相同频率的高频电力的流提供给梯子,从而通过提高膜馈送电力方向上的膜厚分布的均匀性来平衡基板 形状的电极(2),其中高频电功率之间的相位差随时间变化。
    • 4. 发明申请
    • High frequency plasma generator and high frequency plasma generating method
    • 高频等离子体发生器和高频等离子体发生方法
    • US20050241768A1
    • 2005-11-03
    • US10519553
    • 2003-10-01
    • Keisuke KawamuraAkira YamadaHiroshi MashimaYoshiaki Takeuchi
    • Keisuke KawamuraAkira YamadaHiroshi MashimaYoshiaki Takeuchi
    • H05H1/46C23C16/509C23F1/00H01J37/32H01L21/205H01L21/3065
    • H01J37/32155H01J37/32091
    • An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.
    • 本发明的目的是提供一种高频等离子体发生装置和方法,与现有的装置相比,能够进一步提高基板上膜厚度的均匀性。 在反应室(1)中设置接地电极(3),放电电极(2)与接地电极(3)相对设置。 作为处理对象的基板(4)与接地电极(3)紧密接触。 向放电电极(2)施加高频电压,以在接地电极和放电电极之间产生等离子体。 RF电源(15)产生第一高频电压,并且在放电电极(2)的侧面部分上的馈电点(9)上输出产生的电压。 RF电源(16)产生第二高频电压,并且在放电电极(2)的另一侧面部分上的馈电点(9)上输出产生的电压。 这里,第二高频电压具有与第一高频电压相同的频率,并且具有随着由预定调制信号调制的低频信号而变化的相位。
    • 5. 发明授权
    • High frequency plasma generator and high frequency plasma generating method
    • 高频等离子体发生器和高频等离子体发生方法
    • US07141516B2
    • 2006-11-28
    • US10519553
    • 2003-10-01
    • Keisuke KawamuraAkira YamadaHiroshi MashimaYoshiaki Takeuchi
    • Keisuke KawamuraAkira YamadaHiroshi MashimaYoshiaki Takeuchi
    • C23C16/00
    • H01J37/32155H01J37/32091
    • An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.
    • 本发明的目的是提供一种高频等离子体发生装置和方法,与现有的装置相比,能够进一步提高基板上膜厚度的均匀性。 在反应室(1)中设置接地电极(3),放电电极(2)与接地电极(3)相对设置。 作为处理对象的基板(4)与接地电极(3)紧密接触。 向放电电极(2)施加高频电压,以在接地电极和放电电极之间产生等离子体。 RF电源(15)产生第一高频电压,并且在放电电极(2)的侧面部分上的馈电点(9)上输出产生的电压。 RF电源(16)产生第二高频电压,并且在放电电极(2)的另一侧面部分上的馈电点(9)上输出产生的电压。 这里,第二高频电压具有与第一高频电压相同的频率,并且具有随着由预定调制信号调制的低频信号而变化的相位。
    • 7. 发明授权
    • Recording apparatus with ultraviolet light irradiation unit
    • 具有紫外线照射单元的记录装置
    • US08783818B2
    • 2014-07-22
    • US13305651
    • 2011-11-28
    • Akira YamadaShinichi Kamoshida
    • Akira YamadaShinichi Kamoshida
    • B41J29/393
    • B41J29/393B41J11/002
    • A recording apparatus including a recording head that discharges UV ink onto a recording material and an ultraviolet light irradiation unit that irradiates ultraviolet light to the discharged UV ink so as to harden the UV ink; further includes a failure diagnostic unit that diagnoses a failure condition of the ultraviolet light irradiation unit and a controller that controls operations of the recording head, the ultraviolet light irradiation unit, and the failure diagnostic unit. Further, the controller is so configured as to change the operation mode of the recording apparatus to a failure-state mode when the ultraviolet light irradiation unit has been diagnosed as a failure by the failure diagnostic unit.
    • 一种记录装置,包括:将UV油墨排放到记录材料上的记录头;以及紫外光照射单元,其将紫外光照射到排出的UV油墨上,以使UV油墨硬化; 进一步包括诊断紫外线照射单元的故障状态的故障诊断单元和控制记录头,紫外线照射单元和故障诊断单元的操作的控制器。 此外,控制器被配置为当紫外线照射单元已经被故障诊断单元诊断为故障时,将记录装置的操作模式改变为故障状态模式。